Datasheet

UNISONIC TECHNOLOGIES CO., LTD
88CXX
CMOS IC
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR

DESCRIPTION
The UTC 88CXX series are highly accurate, low power
consumption voltage detector, manufactured using CMOS process.
The detection voltage is fixed internally, with an accuracy of ±2.0%.
Besides, UTC 88CXX can easily delay a release signal by
attachment of an external capacitor with built-in delay circuit.

FEATURES
* Highly accurate
: 2.0%
* Hysteresis characteristics: 5% typ.
* Ultra-low current consumption: 1.0μA typ. (VDD=2.0V)
* Detection voltage ranges: 1.5~6V and step by 0.1V.
* Low operating voltage based on detection voltage
* Delay time setting by an additional external capacitor.

ORDERING INFORMATION
Ordering Number
88CXXG-AE5-R
88CXXG-AF5-R
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
SOT-23-5
SOT-25
Packing
Tape Reel
Tape Reel
1 of 12
QW-R502-040. K
88CXX

CMOS IC
MARKING INFORMATION
PACKAGE
SOT-25
SOT-23-5

15:1.5V
16:1.6V
17:1.7V
18:1.8V
19:1.9V
20:2.0V
21:2.1V
22:2.2V
23:2.3V
24:2.4V
25:2.5V
26:2.6V
27:2.7V
28:2.8V
29:2.9V
30:3.0V
31:3.1V
32:3.2V
33:3.3V
34:3.4V
35:3.5V
36:3.6V
37:3.7V
38:3.8V
39:3.9V
40:4.0V
41:4.1V
42:4.2V
43:4.3V
44:4.4V
45:4.5V
MARKING
46:4.6V
47:4.7V
48:4.8V
49:4.9V
50:5.0V
51:5.1V
52:5.2V
53:5.3V
60:6.0V
PIN CONFIGURATION
PIN NO.
1
2
3
4
5

VOLTAGE CODE
PIN NAME
VOUT
VDD
VSS
NC
CD
BLOCK DIAGRAMS
VIN
VREF
+
-
Delay
circuit
VOUT
VSS
CD
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QW-R502-040. K
88CXX

CMOS IC
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Power Supply Voltage
VDD-VSS
12
V
CD Terminal Input Voltage
VCD
VSS-0.3 ~ VDD +0.3
V
Output Voltage
VOUT
VSS-0.3 ~ VDD+0.3
V
Output Current
IOUT
50
mA
Power Dissipation
PD
250
mW
Operating Temperature
TOPR
-40 ~ +85
°С
Storage Temperature
TSTG
-40 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified.)
Detection voltage (1.5V ~ 2.6V)
PARAMETER
SYMBOL
Detect Voltage
VDET
Hysteresis Range
VHYS
Supply Current
Operating Voltage
ISS
VDD
Output Current
IOUT
Detect Voltage
Characteristics
Delay Time
Temperature
Detect Voltage
VDET
Hysteresis Range
VHYS
Supply Current
Operating Voltage
ISS
VDD
Output Current
IOUT
Temperature
N-CH VDS=0.5V
P-CH VDS=0.5V
VDD=1.20V
VDD=4.8V
TEST CONDITONS
0.95
0.23
0.36
N-CH VDS=0.5V
UNISONIC TECHNOLOGIES CO., LTD
VDD=1.20V
VDD=2.40V
VDD=8.4V
TYP
-VDET
-VDET
×0.05
1.2
MAX
-VDET
×1.02
-VDET
×0.08
5.0
10.0
UNIT
V
V
0.50
0.62
µA
V
mA
mA
±100
ppm/°С
16
30
42
ms
MIN
-VDET
×0.98
-VDET
×0.02
TYP
MAX
-VDET
×1.02
-VDET
×0.08
5.0
10.0
UNIT
VDD=4.5V
P-CH VDS=0.5V
△VDET
△TOPR×VDET
tDLY
VDD=4.5V, CD=4.7nF
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MIN
-VDET
×0.98
-VDET
×0.02
VDD=3.5V
△VDET
△TOPR×VDET
tDLY
VDD=3.5V, CD=4.7nF
Detection voltage (2.7V ~ 3.9V)
PARAMETER
SYMBOL
Detect Voltage
Characteristics
Delay Time
TEST CONDITONS
0.95
0.23
1.60
0.36
12
-VDET
-VDET
×0.05
1.3
V
V
0.50
3.70
0.62
µA
V
mA
mA
mA
±100
ppm/°С
28
34
ms
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QW-R502-040. K
88CXX

CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 5.4V)
PARAMETER
SYMBOL
Detect Voltage
VDET
Hysteresis Range
VHYS
Supply Current
Operating Voltage
ISS
VDD
Output Current
IOUT
TEST CONDITONS
VDD=6.0V
N-CH VDS=0.5V
P-CH VDS=0.5V
Detect Voltage
Characteristics
Delay Time
VDD=1.20V
VDD=2.40V
VDD=6.0V
0.95
0.23
1.60
0.46
△VDET
Temperature
△TOPR×VDET
tDLY
Detection voltage (5.5V ~ 6.0V)
PARAMETER
SYMBOL
Detect Voltage
VDET
Hysteresis Range
VHYS
Supply Current
Operating Voltage
ISS
VDD
Output Current
IOUT
VDD=7.0V, CD=4.7nF
TEST CONDITONS
N-CH VDS=0.5V
Temperature
VDD=1.20V
VDD=2.40V
VDD=4.8V
VDD=7.5V, CD=4.7nF
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-VDET
-VDET
×0.05
1.5
MAX
-VDET
×1.02
-VDET
×0.08
5.0
10.0
UNIT
V
V
0.50
3.70
0.75
µA
V
mA
mA
mA
±100
ppm/°С
17
34
ms
MIN
-VDET
×0.98
-VDET
×0.02
TYP
MAX
-VDET
×1.02
-VDET
×0.08
5.0
UNIT
12
0.23
1.60
2.08
△VDET
△TOPR×VDET
tDLY
TYP
12
VDD=7.5V
P-CH VDS=0.5V
Detect Voltage
Characteristics
Delay Time
MIN
-VDET
×0.98
-VDET
×0.02
12
-VDET
-VDET
×0.05
1.5
V
V
0.50
3.70
3.42
µA
V
mA
mA
mA
±100
ppm/°С
17
34
ms
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CMOS IC
DECTECTION VOLTAGE RANGE vs. HYSTERESIS WIDTH
DETECTION VOLTAGE
RANGE (V)
1.5V±2.0%
1.6V±2.0%
1.7V±2.0%
1.8V±2.0%
1.9V±2.0%
2.0V±2.0%
2.1V±2.0%
2.2V±2.0%
2.3V±2.0%
2.4V±2.0%
2.5V±2.0%
2.6V±2.0%
2.7V±2.0%
2.8V±2.0%
2.9V±2.0%
3.0V±2.0%
3.1V±2.0%
3.2V±2.0%
3.3V±2.0%
3.4V±2.0%
3.5V±2.0%

HYSTERESIS WIDTH
VHYS TYP (V)
0.075
0.080
0.085
0.090
0.095
0.100
0.105
0.110
0.115
0.120
0.125
0.130
0.135
0.140
0.145
0.150
0.155
0.160
0.165
0.170
0.175
DETECTION VOLTAGE
RANGE (V)
3.6V±2.0%
3.7V±2.0%
3.8V±2.0%
3.9V±2.0%
4.0V±2.0%
4.1V±2.0%
4.2V±2.0%
4.3V±2.0%
4.4V±2.0%
4.5V±2.0%
4.6V±2.0%
4.7V±2.0%
4.8V±2.0%
4.9V±2.0%
5.0V±2.0%
5.1V±2.0%
5.2V±2.0%
5.3V±2.0%
6.0V±2.0%
HYSTERESIS WIDTH
VHYS TYP (V)
0.180
0.185
0.190
0.195
0.200
0.205
0.210
0.215
0.220
0.225
0.230
0.235
0.240
0.245
0.250
0.255
0.260
0.265
0.300
OUTPUT CONFIGURATIONS
Implementation
With different power supplies
With active low reset CPUs
With active high reset CPUs
With voltage divider variable resistors
CMOS
No
Yes
No
No
Example with one power supply
VDD
V/D
CMOS OUT
CPU
CD
VSS
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QW-R502-040. K
88CXX

CMOS IC
TYPICAL CHARACTERISTICS
88C25
2.70
8
Hysteresis Voltage Width,VHYS(%)
Detection Voltage,VDET(V)
Hystersis Voltage Width vs. Temperature
Detection Voltage vs. Temperature
2.80
+VDET
2.60
-VDET
2.50
2.40
2.30
2.20
-40
20
0
40
Temperature,TA(°С)
-20
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
6
8
4
Input Voltage, VDD (V)
2
10
12
P-CH Transistor Output Current, IOUT (mA)
Current Consumption, Iss (μA)
TA=25°С
5
4
-40
Current Consumption vs. Input Voltage
3.5
6
3
80
60
7
10
0.1
0.1
tPLH
1
10
100
Load Capacitance (nF)
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VDD=8.4V
TA=25°С
VDD=7.2V
15
VDD=6.0V
10
VDD=4.8V
5
0
VDD=3.6V
0
2
4
6
10
8
Nch Transistor Output Current - VDS
N-CH Transistor Output Current, IOUT (mA)
Response Time (µs)
tPHL
1
80
60
VDS (V)
TA=25°С
100
20
0
40
Temperature, TA(°С)
Pch Transistor Output Current vs VDS
20
Dynamic Response vs. COUT (CD pin; open)
1000
-20
12
TA=25°С
10
8
VDD=2.4V
6
4
2
0
0
VDD=1.2V
0.5
1.5
1.0
VDS (V)
2
2.5
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
CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
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QW-R502-040. K
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
CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
88C28
Detection Voltage vs. Temperature
3.00
2.70
2.60
2.50
2.40
-40
20
0
40
Temperature,TA(°С)
-20
60
5
4
3
-40
P-CH Transistor Output Current, IOUT
(mA)
TA=25°С
-20
20
0
40
Temperature,TA(°С)
TA=25°С
VDD=8.4V
VDD=7.2V
15
2.5
2.0
1.5
1.0
0.5
0
2
10
4
8
6
Input Voltage, VDD (V)
100
12
tPHL
10
1
0.1
0.1
tPLH
1
10
Load Capacitance (nF)
100
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80
60
P-CH Transistor Output Current vs. VDS
20
Dynamic Response vs. COUT (CD pin; open)
1000
TA=25°С
Response Time (µs)
6
80
3.0
0.0
7
Current Consumption vs. Input Voltage
3.66
Current Consumption, ISS (μA)
Hysteresis Voltage Width,VHYS(%)
-VDET
N-CH Transistor Output Current, IOUT (mA)
Detection Voltage,VDET(V)
+VDET
2.90
2.80
Hystersis Voltage Width vs. Temperature
8
VDD=6.0V
10
VDD=4.8V
5
VDD=3.6V
0
0
2
6
4
VDS (V)
8
10
N-CH Transistor Output Current - VDS
12
TA=25°С
10
8
VDD=2.4V
6
4
2
0
VDD=1.2V
0
0.5
1.0
1.5
VDS (V)
2.0
2.5
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)

N-CH Transisor Output Current vs. Input Voltage
Current Consumpation ,ISS(µA)
N-CH Transistor Output Current ,IOUT(mA)
Current Consumpation vs. Tempreature
2.0
VDD=4.5V
1.5
1.0
0.5
0.0
-40
-20
20
0
40
Temperature,TA(°С)
60
80
6.0
5.5
VDS=0.5V
5.0
4.5
TA=-40°С
4.0
TA=25°С
3.5
3.0
TA=85°С
2.5
2.0
1.5
1.0
0.5
0.0
0
VDS=0.5V
4.0
TA=-40°С
3.5
3.0
2.0
1.5
3
3.5
CD=4.7nF
40
TA=25°С
2.5
1
1.5
2
2.5
Input Voltage,VDD(V)
Delay Time vs. Temperature
50
Delay Time,td(ms)
P-CH Transistor Output Current, IOUT(mA)
P-CH Transistor Output Current vs. Input Voltage
4.5
0.5
TA=85°С
1.0
30
20
10
0.5
0.0
0
2
4
6
8
Input Voltage,VDD(V)
10
12
0
-40
-20
20
0
40
Temperature,TA(°С)
60
80
Delay Time vs. CD Pin Capacitance
10000
TA=25°С
Delay Time,tD(ms)
1000
100
10
1
0.1
0.01
10
100
0.1
1
CD Pin Capacitance,CD(nF)
1000
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QW-R502-040. K
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
CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
88C33
Detection Voltage vs. Temperatyre
Hystersis Voltage Width vs. Temperature
8
3.55
Hysteresis Voltage Width,VHYS(%)
Detection Voltage, VDET(V)
3.60
+VDET
3.50
3.45
3.40
-VDET
3.35
3.30
-40
20
0
40
Temperature,TA(°С)
-20
6
5
4
3
80
60
7
-40
P-CH Transistor Output Current, IOUT(mA)
Current Consumption, ISS (μA)
TA=25°С
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4
8
6
Input Voltage, VDD (V)
2
10
12
20
TA=25°С
VDD=7.2V
VDD=6.0V
10
VDD=4.8V
5
0
0
2
TA=25°С
tPHL
10
1
0.1
0.1
tPLH
1
10
Load Capacitance (nF)
100
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4
6
VDS (V)
10
8
N-CH transistor output current - VDS
N-CH Transistor Output Current, IOUT (mA)
Response Time (µs)
100
80
60
VDD=8.4V
15
Dynamic Response vs. COUT (CD pin; open)
1000
20
0
40
Temperature,TA(°С)
P-CH Transistor Output Current vs VDS
Current Consumption vs. Input Voltage
4.5
-20
12
TA=25°С
10
8
VDD=2.4V
6
4
2
0
VDD=1.2V
0
0.5
1.5
1.0
VDS (V)
2.0
2.5
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
N-CH Transisor Output Current vs. Input Voltage
Current Consumpation vs. Tempreature
2.5
6.0 V =0.5V
DS
5.5
5.0
4.5
VDD=4.5V
2.0
4.0
1.5
3.5
3.0
TA=25°С
TA=85°С
2.5
2.0
1.0
TA=-40°С
1.5
1.0
0.5
0.0
-40
-20
20
0
40
Temperature,TA(°С)
60
80
P-CH Transistor Output Current vs. Input Voltage
4.5
0.5
0.0
0
2.5
1
1.5
2
Input Voltage,VDD(V)
3
3.5
Delay Time vs. Temperature
60
VDS=0.5V
4.0
0.5
CD=4.7nF
50
3.5
TA=-40°С
40
3.0
TA=25°С
2.5
30
2.0
1.5
20
TA=85°С
1.0
10
0.5
0.0
0
2
4
6
8
Input Voltage,VDD(V)
10
12
0
-40
-20
20
0
40
Temperature,TA(°С)
60
80
Delay Time vs. CD Pin Capacitance
10000
TA=25°С
1000
100
10
1
0.1
0.01
10
100
0.1
1
CD Pin Capacitance,CD(nF)
1000
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CMOS IC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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