UNISONIC TECHNOLOGIES CO., DTC124E NPN EPITAXIAL SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). *The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects. *Only the on / off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT 2 1 3 SOT-23 MARKING OUT R1 IN *Pb-free plating product number:DTC124EL CC4 R2 PIN CONFIGURATION GND IN PIN NO. PIN NAME 1 GND 2 IN 3 OUT OUT GND ORDERING INFORMATION Order Number Normal Lead free DTC124E-AE3-R DTC124EL-AE3-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing SOT-23 Tape Reel 1 QW-R206-045,B DTC124E NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCC VIN IC IO PD TJ TSTG RATINGS 50 -10 ~ +40 100 30 200 150 -40 ~ +150 UNIT V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER SYMBOL VI(off) Input Voltage VI(ON) Output Voltage VO(ON) Input Current II Output Current IO(off) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT *Transition frequency of the device TEST CONDITIONS VCC= 5V, IOUT=100μA VOUT= 0.2V, IOUT= 5mA IOUT/IIN= 10mA / 0.5 mA VIN= 5V VCC= 50V , VIN=0V VOUT= 5V, IOUT= 5mA VCE= 10 V, IE= -5mA, f=100MHz * UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 0.5 UNIT 0.1 0.3 0.36 0.5 V mA μA 22 1 250 28.6 1.2 kΩ 3 56 15.4 0.8 V MHz 2 QW-R206-045,B DTC124E TYPICAL CHARACTERICS Fig.1 Input voltage vs.output current (ON characterristics) Vo=-0.2V 100 Fig.2 Output current vs Input voltage .(OFF characterristics) 10m Vcc=5V 5m 50 2m Output Current :Io(A) Input Voltage :V I(ON) V 20 10 T a= - 40℃ -25 ℃ 100 ℃ 5 2 1 200μ 100μ 50μ 20μ 10μ 5μ 200m 2μ 1μ 2 0 0 μ 5 0 0 μ 1m 2m 5m 10m 20m 0 50m 100m Output Current :Io(A) 1.0 1.5 2.0 2.5 3.0 V Fig.4Output voltage vs.output current 1 Vo=5V 500 lo/lI =20 500m Output Voltage :V O(ON) V T a=100℃ 25℃ -40℃ 100 50 20 10 5 200m 100m T a=100℃ 25℃ -40℃ 50m 20m 10m 5m 2m 2 1 100μ 0.5 Input Voltage :V I(OFF) Fig.3 DC current gain vs.output current 1k 200 T a=100℃ 25℃ -40℃ 1m 500μ 500m 100m 100μ DC Current Gain: G I ■ NPN EPITAXIAL SILICON TRANSISTOR 2 0 0 μ 5 0 0 μ 1m 2m 5m 10m 20m 50m 100m Output Current :Io(A) 1m 100μ 2 0 0 μ 5 0 0 μ 1m 2m 5m 10m 20m 50m 100m Output Current :Io(A) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-045,B