UTC-IC MMBTA42

UNISONIC TECHNOLOGIES CO., LTD
MMBTA42
NPN SILICON TRANSISTOR
HIGH VOLTAGE RANSISTOR
„
DESCRIPTION
The UTC MMBTA42 are high voltage transistors, designed for
telephone switch and high voltage switch.
„
FEATURES
* Collector-Emitter voltage: VCEO=300V
* High current gain
* Collector Dissipation: Pc (max) =350mW
* Pb-free plating product number: MMBTA42L
„
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBTA42-AE3-R
MMBTA42L-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBTA42L-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
„
(1) R: Tape Reel
(2) AE3: SOT-23
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
1D
Lead Plating
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Copyright © 2005 Unisonic Technologies Co., Ltd
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MMBTA42
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation (TA=25℃)
PC
350
mW
Collector Current
IC
500
mA
℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
DC Current Gain
hFE
Current Gain Bandwidth Product
Collector Base Capacitance
fT
Ccb
TEST CONDITIONS
Ic=100μA, IE=0
Ic=1mA, IB=0
IE=100μA, Ic=0
Ic=20mA, IB=2mA
Ic=20mA, IB=2mA
VCB=200V, IE=0
VBE=6V, Ic=0
VCE=10V, Ic=1mA
VCE=10V, Ic=10mA
VCE=10V, Ic=30mA
VCE=20V, Ic=10mA, f=100MHz
VCB=20V, IE=0, f=1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
300
300
6
TYP
MAX
0.2
0.90
100
100
80
80
80
50
UNIT
V
V
V
V
V
nA
nA
300
3
MHz
pF
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„
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain vs. Output Current
1K
1K
VCE=5V
500
Ta=150℃
Ta=150℃
Ta=25℃
100
50
50
20
20
10
10
5
5
2
1
2
1
2
5 10 20 50 100 200 500
Collector Current, IC (mA)
Ta=-50℃
1
Collector Emitter Saturation vs.
Collector Current
2.0
1.8
0.9
1.6
0.8
1.4
0.7
1.2
0.6
1.0
Ta=-50℃
Ta=25℃
0.4
Ta=25℃
0.6
0.3
0.4
Ta=150℃
0.2
Ta=-50℃
0.2
5 10 20 50 100 200 500
Collector Current, IC (mA)
VCE=5V
05
Ta=150℃
2
Collector Emitter Saturation vs.
Collector Current
1.0
IC/IB=10
0.8
Ta=25℃
200
Ta=-50℃
1
VCE=10V
500
200
100
DC Current Gain vs. Output Current
0.0
0.1
0.0
1 2
5 10 20 50 100 200 500
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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0.1
1
10
Collector Current, IC (mA)
100
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MMBTA42
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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