UNISONIC TECHNOLOGIES CO., LTD UT2327 Power MOSFET P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT2327L is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 2 1 SOT-23 SYMBOL 2.Drain *Pb-free plating product number: UT2327L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT2327-AE3-R UT2327L-AE3-R UT2327L-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 23A Lead Plating www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-108,A UT2327 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified) PARAMETER SYMBOL VDS VGS RATING UNITS - 20 V ± 12 V Ta=25℃ -2.6 A Continuous Drain Current (Note 3) ID Ta=70℃ -2.1 A Pulsed Drain Current (Note 1, 2) IDM -10 A Total Power Dissipation (Ta=25℃) 1.38 W PD ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL θJA MIN TYP MAX 90 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current TJ=25℃ TJ=70℃ SYMBOL TEST CONDITIONS MIN BVDSS VGS=0V, ID=-250uA VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=±12V Reference to 25℃, ID=-1mA -20 IDSS Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -0.5 VGS=-5V, ID=-2.8A Drain-Source On-State Resistance (Note 2) RDS(ON) VGS=-2.8V, ID=-2.0A Forward Transconductance gFS VDS=-5V, ID=-2.8A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-6V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) VDS=-15V, VGS=-10V, Turn-ON Rise Time tR ID=-1A, RG=6Ω, RD=15Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=-6V, VGS=-5V, ID=-2.8A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS TJ=25℃, IS=-1.6A, VGS=0V Drain-Source Diode Forward Voltage(Note2) VSD Maximum Continuous Drain-Source Diode IS VD=VG=0V, VS=-1.2V Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current (Note 1) Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 270℃/W when mounted on min. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNITS -1 -10 ±100 V uA uA nA V/℃ 130 190 4.4 V mΩ mΩ S 295 170 65 pF pF pF 5.2 9.7 19 29 5.2 1.36 0.6 ns ns ns ns nC nC nC -0.1 10 -1.2 V -1 A -10 A 2 of 5 QW-R502-108,A UT2327 Power MOSFET TYPICAL CHARACTERISTICS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 5 5 VGS = -5V VGS = -4V Drain Current, ID (A) 4 VGS = -3V 3 2 VGS = -2V 1 0 0 2 1 3 4 5 T A = 150℃ VGS = -5V VGS = -4V 4 Drain Current, ID (A) T A = 25℃ VGS = -3V 3 2 VGS = -2V 1 0 6 0 Drain-to-Source Voltage, VDS (V) Fig 3. On-Resistance vs. Gate Voltage 3 4 6 5 Fig 4. Normalized On-Resistance 800 1.8 1.6 Normalized RDS(ON) ID = -2A TA =25℃ 600 RDS(ON) (Ω) 2 1 Drain-to-Source Voltage, VDS (V) 400 200 ID = -2.8A VGS = -5V 1.4 1.2 1 0.8 0 2 Continuous Source Current, IS (A) 10 4 6 8 0 50 150 100 Gate-to-Source Voltage, VGS (V) Junction Temperature, Tj (℃) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature 1.5 1 TJ=150℃ TJ =25℃ 0 0 0.1 0.6 -50 10 Gate Threshold Voltage, VGS(TH) (V) 0 0.3 0.5 0.7 0.9 1.1 Source-to-Drain Voltage, VSD (V) 1.3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.0 0.5 0.0 -50 0 50 100 Junction Temperature, TJ (℃) 150 3 of 5 QW-R502-108,A UT2327 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 4 CISS COSS 3 2 100 CRSS 1 0 0 2 4 Total Gate Charge, QG (nC) 0 6 100 10 1ms 1 10ms 0.1 100ms TA =25°C Single Pulse 0.01 0.1 1 1s DC 10 100 Normalized Thermal Response (θja) Fig 9. Maximum Safe Operating Area ID (A) f=1.0MHz ID = -2.8A VDS = -6V C (pF) Gate to Source Voltage, VGS (V) 5 1 1 3 5 7 9 11 Drain-to-Source Voltage,VDS (V) 13 Fig 10. Effective Transient Thermal Impedance 0.1 PDM 0.01 t T Duty factor = t/T Peak T J = PDM x θja + Ta θja = 270 ℃/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Drain-to-Source Voltage,VDS (V) Pulse Width, t (s) Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform VG VDS 90% QG -5V QGS QGD 10% VGS tD(ON) t R t D(OFF) t F UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Charge Q 4 of 5 QW-R502-108,A UT2327 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-108,A