UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process. SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2352L-AE3-R UT2352G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING BCB L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-157.C UT2352 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current ID -1.3 A Pulsed Drain Current IDM -10 A Power Dissipation (Note 3) PD 0.46 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient (Note 3) Junction-to-Case SYMBOL θJA θJC RATING 250 75 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -30 Drain-Source Leakage Current IDSS VDS=-24V, VGS=0V Gate-Source Leakage Current IGSS VGS=±25V, VDS=0V Breakdown Voltage Temperature ΔBVDSS/ΔTJ Reference to 25℃, ID=-250uA Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -0.8 Drain-Source On-State Resistance (Note VGS=-10V, ID=-1.3A RDS(ON) 2) VGS=-4.5V, ID=-1.1A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) VDD=-10V, VGS=-10V, ID=-1A, Turn-ON Rise Time tR RG=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge QG VDS=-10V, VGS=-4.5V, Gate-Source Charge QGS ID=-0.9A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward VSD VGS=0V, IS=-0.42 A Voltage(Note2) Maximum Continuous Drain Source Diode IS Forward Current Reverse Recovery Time tRR IF = -3.9 A, dIF/dt = 100 A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 0.001 in 2 pad of 2oz. copper; 270℃/W when mounted on min. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNITS -1 ±100 mV/℃ -17 -2.0 150 250 V uA nA -2.5 180 300 150 40 20 V mΩ mΩ pF pF pF 4 15 10 1 1.4 0.5 0.5 8 28 18 2 1.9 ns ns ns ns nC nC nC -0.8 -1.2 V -0.42 A 17 7 ns nC 2 of 5 QW-R502-157.C UT2352 Normalized Drain-Source OnResistance,RDS(ON) TYPICAL CHARACTERISTICS Capaciyance (pF) On-Resistance,RDS(ON) (OHM) Drain Current,-ID (A) Power MOSFET Transfer Characteristics 10 100 Drain Current,-ID (A) 8 TA=-55℃ Reverse Drain Current,-IS (A) VDS=-5V 125℃ 6 25℃ 4 2 0 1 4 2 3 5 6 7 Gate to Source Voltage,-VGS (V) 8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Body Diode Forward Voltage Variation with Source Current and Temperature VGS=0V 10 1 0.1 0.01 TA=125℃ 25℃ -55℃ 0.001 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Body Diode Forward Voltage,-VSD (V) 3 of 5 QW-R502-157.C UT2352 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Gate Charge Characteristics On-Resistance Variation with Temperature 10 1.4 ID=-0.9A VGS=-10V 8 Normalized Drain-Source OnResistance RDS(ON) Gate-Source Voltage,-VGS (V) ID=-0.9A VDS=-10V -20V 6 -15V 4 2 0.5 1 1.5 2 2.5 1 0.8 0.6 -50 -25 0 0 1.2 3 Single Pulse Maximum Power Dissipation Single Pulse RθJA=270 /W TA=25 30 20 10 0 10 75 100 125 150 100 1000 10 100μs RDS(ON) Limit 1ms 1 0.1 100ms VGS=-10V Single Pulse RθJA=270 /W TA=25 0.01 0.1 10s 10ms 1s DC 1 10 Drain-Source Voltage,-VDS (V) 100 Normalized Effective Transient Thermal Resistance,r (t) 0.0001 0.001 0.01 0.1 1 Time,t (sec) 50 Maximum Safe Operating Area 100 Drain Current,-ID (A) Peak Transient Power,P(pk) (W) 40 25 Junction Temperature,TJ (℃) Gate Charge,QG (nC) 50 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-157.C UT2352 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-157.C