FREESCALE MRF5P21180HR6

Freescale Semiconductor
Technical Data
Document Number: MRF5P21180HR6
Rev. 2, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF5P21180HR6
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ = 1600 mA, Pout = 38 Watts Avg., Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
2170 MHz, 38 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
530
3.0
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 180 W CW
Case Temperature 71°C, 38 W CW
RθJC
Unit
°C/W
0.31
0.33
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5P21180HR6
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage (3)
(VDS = 28 Vdc, ID = 1600 mAdc)
VGS(Q)
—
3.6
—
Vdc
Drain- Source On - Voltage (1)
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance (1)
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
Crss
—
1.7
—
pF
Characteristic
Off Characteristics
(1)
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg.,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
—
dB
Drain Efficiency
ηD
23
25.5
—
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 38
dBc
IRL
—
- 14
-9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
MRF5P21180HR6
2
RF Device Data
Freescale Semiconductor
VBIAS
R2
+
C9
C8
C16
+
C18
+
C19
+ VSUPPLY
C20
Z15
R1
+
C23
R6
C13
C11
C5
Z13
Z24
Z17
Z19
Z11
C4
Z3
Z5
Z7
Z25
Z9
C1
RF
INPUT
Z1
Z2
Z21
DUT
Z4
Z6
Z8
Z26
Z22
RF
OUTPUT
Z10
C2
Z14
VBIAS
Z23
Z18
Z20
Z12
R3
C3
Z16
R4
+
C24
R5
C14
C12
C6
C7
Z1, Z22
Z2, Z21
Z3, Z20
Z4, Z19
Z5, Z6
Z7, Z8
Z9, Z10
1.000″ x 0.066″ Microstrip
0.760″ x 0.113″ Microstrip
0.068″ x 0.066″ Microstrip
1.672″ x 0.066″ Microstrip
0.318″ x 0.066″ Microstrip
0.284″ x 0.180″ Microstrip
0.094″ x 0.650″ Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z23, Z24
Z25, Z26
PCB
+
C10
C15
+
C17
+
C21
+ VSUPPLY
C22
1.030″ x 0.035″ Microstrip
0.083″ x 0.650″ Microstrip
0.550″ x 0.058″ Microstrip
0.353″ x 0.066″ Microstrip
0.417″ x 0.650″ Microstrip
0.161″ x 0.650″ Microstrip
Taconic RF - 35, 0.030″, εr = 3.5
Figure 1. MRF5P21180HR6 Test Circuit Schematic
Table 5. MRF5P21180HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
30 pF Chip Capacitors
100B300JCA500X
ATC
C5, C6, C7, C8
5.6 pF Chip Capacitors
100B5R6JCA500X
ATC
C9, C10
10 μF Tantalum Capacitors
T495X106K035AS4394
Kemet
C11, C12
1000 pF Chip Capacitors
100B102JCA500X
ATC
C13, C14, C15, C16
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C17, C18, C19, C20,
C21, C22
22 μF Tantalum Capacitors
T491X226K035AS4394
Kemet
C23, C24
1.0 μF Tantalum Capacitors
T491C105M050
Kemet
R1, R2, R3, R4
10 W, 1/8 W Chip Resistors
R5, R6
1.0 kW, 1/8 W Chip Resistor
MRF5P21180HR6
RF Device Data
Freescale Semiconductor
3
C23
VGG
R6
R1
C13 C11
R2
C16 C18 C19
C5
VDD
C8
C9
C20
C4
CUT OUT AREA
C1
C2
C3
C22
C7
VGG
R5
R4 C24
R3
C14 C12
C10
VDD
C6
C15 C17 C21
MRF5P21180
Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5P21180HR6 Test Circuit Component Layout
MRF5P21180HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
35
13
ηD
30
12
11
VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IRL
10
9
25
20
−20
−25
8
−30
IM3
7
−35
ACPR
6
5
2080
2100
−40
2120
2140
2160
−45
2200
2180
−10
−15
−20
−25
−30
−35
IRL, INPUT RETURN LOSS (dB)
14
ηD, DRAIN
EFFICIENCY (%)
40
Gps
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
15
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
−20
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
15
IDQ = 2400 mA
G ps , POWER GAIN (dB)
14.5
2000 mA
1600 mA
14
1200 mA
13.5
800 mA
13
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
12.5
20
40
60
80
100
−25
−30
IDQ = 800 mA
2400 mA
−35
2000 mA
−40
1200 mA
−45
1600 mA
−50
300
200
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
40
20
Pout, OUTPUT POWER (WATTS) PEP
−20
58
−25
56
3rd Order
−35
−40
5th Order
−45
7th Order
−50
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1600 mA
Two−Tone Measurements
(f1+f2)/2 = Center Frequency of 2140 MHz
−55
−60
1
0.1
80 100
200
300
Figure 5. Third Order Intermodulation Distortion
versus Output Power
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Two - Tone Power Gain versus
Output Power
−30
60
Pout, OUTPUT POWER (WATTS) PEP
10
Ideal
P3dB = 53.72 dBm (236 W)
54
P1dB = 52.99 dBm (199 W)
50
48
46
VDD = 28 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec (off)
f = 2140 MHz
44
42
20 30
Actual
52
30
32
34
36
38
40
42
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5P21180HR6
RF Device Data
Freescale Semiconductor
5
40
1010
−15
VDD = 28 Vdc, IDQ = 1600 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W−CDMA, 10 MHz @ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
30
−20
−25
25
−30
20
Gps
15
−35
ηD
IM3
−40
10
−45
ACPR
5
−50
0
−55
6
4
8
10
30
50
IM3 (dBc), ACPR (dBc)
35
MTTF FACTOR (HOURS x AMPS 2)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
109
108
107
100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) W−CDMA
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
−20
10
−40
−50
1
−60
(dB)
PROBABILITY (%)
3.84 MHz
Channel BW
−30
0.1
−70
−80
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
−90
0.0001
0
2
4
6
−110
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−120
−25
−20
−100
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5P21180HR6
6
RF Device Data
Freescale Semiconductor
Zo = 25 Ω
Zload
f = 2110 MHz
f = 2170 MHz
f = 2170 MHz
f = 2110 MHz
Zsource
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 38 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
5.39 - j13.89
3.69 - j10.51
2140
5.66 - j13.99
3.81 - j10.66
2170
5.53 - j14.51
3.79 - j11.05
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5P21180HR6
RF Device Data
Freescale Semiconductor
7
NOTES
MRF5P21180HR6
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5P21180HR6
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5P21180HR6
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
A
D
aaa
M
T A
M
B
M
ccc
ccc
M
T A
M
B
M
T A
M
B
M
R
M
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D - 05
ISSUE E
NI - 1230
MRF5P21180HR6
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF5P21180HR6
Document Number: MRF5P21180HR6
Rev. 2, 5/2006
12
RF Device Data
Freescale Semiconductor