VISHAY MBR40H35CT

MBR40H35CT thru MBR40H60CT
Vishay Semiconductors
New Product
formerly General Semiconductor
Dual Schottky Barrier Rectifiers
Reverse Voltage 35V to 60V
Forward Current 40A
Max. Junction Temperature 175°C
Features
TO-220AB (MBR40HxxCT)
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.185 (4.70)
0.382 (8.70)
0.169 (4.30)
0.150 (3.80)
0.343 (8.70) Typ.
0.139 (3.54)
0.055 (1.40)
Dia.
Mechanical Data
0.154 (3.90)
0.138 (3.50)
1
PIN
2
0.638 (16.20)
0.598 (15.20)
0.634 (16.10)
0.618 (15.70)
0.331 (8.40) Typ.
3
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.105 (28.08)
0.118
(3.00) Typ.
0.102 (2.60)
0.087 (2.20)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) Typ.
PIN 1
PIN 2
PIN 3
CASE
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
Maximum Ratings
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in high frequency inverters,
free wheeling, and polarity protection applications
0.049 (1.25)
0.114 (2.90)
0.106 (2.70)
0.067
(1.70) Typ.
•
•
•
•
•
0.523 (13.28)
0.507 (12.88)
Case: JEDEC TO-220AB molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Epoxy meets UL 94V-0 flammability rating
Dimensions in inches
and (millimeters)
0.024 (0.60)
0.018 (0.45)
(TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR40H MBR40H MBR40H MBR40H
35CT
45CT
50CT
60CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current
(see fig. 1)
Total device
Per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load
Per leg
40
20
IF(AV)
IFSM
350
A
320
A
Peak repetitive reverse current per leg at tp = 2µs, 1KHZ
IRRM
1.0
A
Peak non-repetitive reverse surge energy
(8/20µs waveform)
Per leg
ERSM
20
mJ
Non-repetitive avalanche energy
at 25°C, IAS = 3.0A, L=5mH
Per leg
EAS
22.5
mJ
dv/dt
10,000
V/µs
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Document Number 88920
14-Jul-04
TJ, TSTG
–65 to +175
°C
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1
MBR40H35CT thru MBR40H60CT
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR40H MBR40H MBR40H MBR40H
35CT
40CT
50CT
60CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
VF
Maximum reverse current per leg
TJ = 25°C
at working peak reverse voltage (Note 1) TJ = 125°C
IR
Typical junction capacitance at 4.0V, 1MHz
CJ
Maximum instantaneous
forward voltage per leg(1)
at IF = 20A,
at IF = 20A,
at IF = 40A,
at IF = 40A,
0.64
0.55
0.76
0.70
0.68
0.60
0.83
0.73
V
µA
mA
100
15
1200
920
pF
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Typical thermal resistance per leg
Symbol
Value
Unit
RθJC
1.8
Case
Package Option
Package
Code
TO-220AB
Anti-Static tube, 50/tube, 1K/carton
45
C/W
O
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle.
Ordering Information
Product
MBR40H35CT - MBR40H60CT
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2
Document Number 88920
14-Jul-04
MBR40H35CT thru MBR40H60CT
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
400
Peak Forward Surge Current (A)
Average Forward Current (A)
50
40
30
20
MBR40H35-45CT
MBR40H50-60CT
10
0
50
75
100
125
150
175
250
200
150
100
MBR40H35-45CT
MBR40H50-60CT
50
1
200
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 – Typical Reverse Leakage
Characteristics Per Leg
100
1,000,000
100,000
TJ = 175°C
Instantaneous
Reverse Current (µA)
Instantaneous Forward Current (A)
300
0
25
10
TJ = 125°C
MBR40H35-45CT
MBR40H50-60CT
1
TJ = 175°C
10,000
TJ = 125°C
1,000
100
MBR40H35-45CT
MBR40H50-60CT
10
TJ = 25°C
TJ = 25°C
1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
0.8 0.9
20
30
40
50
60
70
80
90
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
100
10
Transient Thermal Impedance (°C/W)
10000
Junction Capacitance (pF)
350
1000
MBR40H35-45CT
MBR40H50-60CT
100
0.1
MBR40H35-45CT
MBR40H50-60CT
0.1
1
10
Reverse Voltage (V)
Document Number 88920
14-Jul-04
1
100
0.01
0.1
1
10
100
t -- Pulse Duration (sec.)
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