SB5H90 and SB5H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifier Reverse Voltage 90 to 100V Forward Current 5.0A DO-201AD Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection 1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia. Mechanical Data 0.375 (9.5) 0.285 (7.2) Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.375” (9.5mm) lead length, 5lbs (2.3kg tension) Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.04 oz., 1.12 g 1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia. Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (T A Parameter = 25°C unless otherwise noted) Symbol SB5H90 SB5H100 Unit Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 80°C IF(AV) 5.0 A Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Peak repetitive reverse surge current at tp = 2.0µs, 1KHz IRRM 1.0 A Maximum thermal resistance (2) RθJA RθJL 25 8 °C/W Storage temperature range TSTG – 55 to +175 °C TJ 175 °C Maximum operating junction temperature Electrical Characteristics (T A Maximum instantaneous forward voltage at: (1) Maximum DC reverse current at rated DC blocking voltage(1) = 25°C unless otherwise noted) IF = 5.0A, TA = 25°C IF = 5.0A, TA = 125°C VF 0.80 0.70 V TA = 25°C TA = 125°C IR 200 10 µA mA Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Document Number 88722 16-Aug-04 www.vishay.com 1 SB5H90 and SB5H100 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 1 – Forward Current Derating Curve Peak Forward Surge Current (A) 5.0 4.0 3.0 2.0 1.0 TJ = TJ max. 8.3ms single half sine-wave (JEDEC Method) 200 160 120 80 40 0 0 0 25 50 75 100 125 150 175 200 Number of Cycles at 60 Hz Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics TJ = 175°C 10 TJ = 150°C TJ = 125°C 1 TJ = 100°C TJ = 25°C 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10000 1000 TJ = 150°C 100 TJ = 125°C TJ = 100°C 10 1 0.1 TJ = 25°C 0.01 20 40 60 80 100 Percent of Rated Peak Reverse Voltage, % Instantaneous Forward Voltage (V) Fig. 5 - Typical Transient Thermal Impedance Fig. 6 – Typical Junction Capacitance 10000 100 Junction Capacitance (pF) Transient Thermal Impedance (°C/W) 100 10 1 Case Temperature (°C) 100 Instantaneous Forward Current (A) 240 Instantaneous Reverse Current, (µA) Average Forward Current (A) 6.0 10 1 0.1 0 0.1 1 10 t, Pulse Duration (sec.) www.vishay.com 2 100 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Document Number 88722 16-Aug-04