PTZ36B Diodes Zener diode PTZ36B zApplications zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) Voltage regulation 2.0 ② 0.1±0.02 0.1 4.2 5.0±0.3 1.2±0.3 4.5±0.2 ① zFeatures 1) Small power mold type. (PMDS) 2) High ESD tolerance 2.0 2.6±0.2 PMDS zConstruction Silicon epitaxial planar 2.0±0.2 1.5±0.2 zStructure ROHM : PMDS JEDEC : SOD-106 ① ② EX. PTZ10B Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Sym bol Lim its Unit P ower dis s ipation Param eter P 1000 mW J unction tem perature Tj 150 ℃ S torage tem perature Ts tg -55 to +150 ℃ Rev.C 1/4 PTZ36B Diodes zElectrical characteristics (Ta=25°C) Symbol TYP. Zener voltage : Vz(V) MIN. 3.600 3.900 Operating resistance : Zz(Ω) Reverse current : IR(μA) Temperature coefficiency : *γz(mV/℃) ESD Break down voltage : ESD(kV) Iz(mA) Max. Iz(mA) MAX. VR(V) Iz(mA) MIN. TYP. PTZ 3.6B 40 15 40 60 40 1.0 -2.8 PTZ 3.9B 40 15 40 40 40 1.0 -2.4 PTZ 4.3B 4.300 40 40 40 4.572 4.800 15 20 1.0 -2.1 PTZ 4.7B 4.700 40 40 40 4.924 5.200 10 20 1.0 -1.7 PTZ 5.1B 5.100 40 40 40 5.368 5.700 8 20 1.5 -0.6 PTZ 5.6B 5.600 40 40 40 5.856 6.300 8 20 2.5 1.4 PTZ 6.2B 6.200 40 40 40 6.509 7.000 6 20 3.0 2.5 PTZ 6.8B 6.800 40 40 40 7.280 7.700 6 20 3.5 3.2 PTZ 7.5B 7.500 40 40 40 7.889 8.400 4 20 4.0 4.2 PTZ 8.2B 8.200 40 40 40 8.655 9.300 4 20 5.0 5.0 PTZ 9.1B 9.100 40 40 40 9.747 10.200 6 20 6.0 5.9 PTZ 10B 10.000 40 40 40 10.310 11.200 6 10 7.0 6.9 30kV PTZ 11B 11.000 20 20 20 11.510 12.300 8 10 8.0 7.9 PTZ 12B 12.000 20 20 20 12.500 13.500 8 10 9.0 8.7 PTZ 13B 13.300 20 20 20 13.820 15.000 10 10 10.0 10.1 PTZ 15B 14.700 20 20 20 15.350 16.500 10 10 11.0 11.8 PTZ 16B 16.200 20 20 20 16.860 18.300 12 10 12.0 13.3 PTZ 18B 18.000 20 20 20 19.000 20.300 12 10 13.0 15.0 PTZ 20B 20.000 20.820 20 14 20 15.0 17.4 20 22.400 10 PTZ 22B 22.000 23.850 10 14 10 17.0 19.4 10 24.500 10 PTZ 24B 24.000 10 16 10 25.310 27.600 10 10 19.0 21.6 PTZ 27B 27.000 10 16 10 28.700 30.800 10 10 21.0 24.6 PTZ 30B 30.000 10 18 10 31.570 34.000 10 10 23.0 27.5 PTZ 33B 33.000 10 18 10 34.950 37.000 10 10 25.0 30.8 PTZ 36B 36.000 39.240 40.000 10 20 10 10 27.0 37.0 10 1.The Zener voltage(Vz) is measured 40ms after power is supplied. 2.The operating resistances(Zz､Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz). TYP. 3.813 4.136 MAX. 4.000 4.400 Test Condition C=150pF R=330Ω forward and reverse : 10 times zMarking (TYPE NO.) TYPE PTZ 3.6B PTZ 3.9B PTZ 4.3B PTZ 4.7B PTZ 5.1B PTZ 5.6B PTZ 6.2B PTZ 6.8B PTZ 7.5B TYPE NO. 3.6B 3.9B 4.3B 4.7B 5.1B 5.6B 6.2B 6.8B 7.5B TYPE PTZ 8.2B PTZ 9.1B PTZ 10B PTZ 11B PTZ 12B PTZ 13B PTZ 15B PTZ 16B PTZ 18B TYPE NO. 8.2B 9.1B 10B 11B 12B 13B 15B 16B 18B TYPE PTZ 20B PTZ 22B PTZ 24B PTZ 27B PTZ 30B PTZ 33B PTZ 36B TYPE NO. 20B 22B 24B 27B 30B 33B 36B Rev.C 2/4 PTZ36B Diodes zElectrical characteristic curves (Ta=25°C) 100 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 20 18 22 24 30 27 33 36 4.7 4.3 3.9 10 1 0.1 0.01 0.001 0 5 10 15 20 25 30 35 40 45 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 10000 PRSM 1000 REVERSE SURGE MAXIMUM POWER:PRSM(W) POWER DISSIPATION:Pd(W) 1200 t 1000 800 600 400 200 100 10 1 0 0 25 50 75 100 125 0.001 150 AMBIENT TEMPERATURE:Ta(℃) Pd-Ta CHARACTERISTICS 40 0.1 35 0.08 30 0.06 25 0.04 20 0.02 15 0 10 -0.02 -0.04 5 -0.06 0 -0.08 -5 10 20 30 TIME:t(ms) IFSM-t CHARACTERISTICS 40 1000 0.1 1 10 100 Mounted on epoxy board IM=10mA IF=0.5A Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0.12 0 0.01 TIME:t(ms) PRSM-TIME CHARACTERISTICS TEMP.COEFFICIENCE:γz(mV/℃) TEMP.COEFFICIENCE:γz(％/℃) ZENER CURRENT:Iz(mA) 3.6 100 1ms time 300us Rth(j-c) 10 1 0.1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 Rev.C 3/4 PTZ36B Diodes 10 1 Ta=150℃ 0.1 0.01 1000 f=1MHｚ Ta=125℃ 100 REVERSE CURRENT:IR(nA) ZENER CURRENT:Iz(mA) Ta=150℃ 1000 Ta=-25℃ 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ Ta=75℃ Ta=125℃ 100 Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 100 10 0.001 0.001 35 36 37 38 39 40 41 42 43 44 45 0 ZENER VOLTAGE：Vz(V) Vz-Iz CHARACTERISTICS 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 30 39.3 39.2 AVE:39.24V 39.1 39 Ta=25℃ VR=27V n=30pcs 0.8 0.7 0.6 0.5 0.4 0.3 AVE:0.0882nA 0.2 140 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 39.4 30 120 110 100 AVE:120.7pF 90 80 70 60 0 50 IR DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 130 0.1 Vz DISPERSION MAP 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 150 1 0.9 Ta=25℃ IZ=10mA n=30pcs REVERSE CURRENT:IR(nA) ZENER VOLTAGE:Vz(V) 39.5 Ct DISPERSION MAP 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 1000 DYNAMIC IMPEDANCE:Zz(Ω) 1 0.0001 100 10 25 No break at 30kV 20 15 10 5 1 0.1 1 ZENER CURRENT:Iz(mA) Zz-Iz CHARACTERISTICS 10 0 C=200pF R=0Ω C=100pF R=1.5kΩ C=150pF R=330Ω ESD DISPERSION MAP Rev.C 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1