MC74HC1G32 Single 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G32 output drive current is 1/2 compared to MC74HC series. http://onsemi.com MARKING DIAGRAMS Features High Speed: tPD = 7 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C High Noise Immunity Balanced Propagation Delays (tpLH = tpHL) Symmetrical Output Impedance (IOH = IOL = 2 mA) Chip Complexity: FET = 44 These Devices are Pb−Free and are RoHS Compliant 5 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A M • • • • • • • H4 M G G 1 5 H4 M G G TSOP−5 / SOT−23 / SC−59 DT SUFFIX CASE 483 IN B 1 IN A 2 GND 3 5 VCC 4 OUT Y 1 H4 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. PIN ASSIGNMENT 1 Figure 1. Pinout IN A IN B ≥1 IN B 2 IN A 3 GND 4 OUT Y 5 VCC OUT Y FUNCTION TABLE Figure 2. Logic Symbol Inputs Output A B Y L L H H L H L H L H H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2011 May, 2011 − Rev. 12 1 Publication Order Number: MC74HC1G32/D MC74HC1G32 MAXIMUM RATINGS Symbol Parameter Value Unit *0.5 to )7.0 V V VCC DC Supply Voltage VIN DC Input Voltage *0.5 to VCC )0.5 DC Output Voltage VOUT *0.5 to VCC )0.5 V IIK DC Input Diode Current $20 mA IOK DC Output Diode Current $20 mA IOUT DC Output Sink Current $12.5 mA ICC DC Supply Current per Supply Pin $25 mA *65 to )150 °C TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature Under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD Latchup Performance °C °C SC70−5/SC−88A/SOT−353 (Note 1) SOT23−5/TSOP−5/SC59−5 350 230 °C/W SC70−5/SC−88A/SOT−353 SOT23−5/TSOP−5/SC59−5 150 200 mW Level 1 Oxygen Index: 28 to 34 ESD Withstand Voltage ILATCHUP 260 )150 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Above VCC and Below GND at 125°C (Note 5) u2000 u200 N/A V ±500 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm by 1 inch, 2 ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 2.0 6.0 V VIN DC Input Voltage 0.0 VCC V DC Output Voltage Operating Temperature Range Input Rise and Fall Time VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 V °C 0 0 0 0 1000 600 500 400 ns TJ = 80°C Time, Years VCC )125 TJ = 90°C Time, Hours 0.0 *55 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110°C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES TJ = 130°C tr , tf TJ = 120°C TA TJ = 100°C VOUT 1 1 10 TIME, YEARS 100 1000 Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74HC1G32 DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Test Conditions (V) Min 1.5 2.1 3.15 4.20 VIH Minimum High−Level Input Voltage 2.0 3.0 4.5 6.0 VIL Maximum Low−Level Input Voltage 2.0 3.0 4.5 6.0 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = −20 mA VIN = VIH or VIL IOH = −2 mA IOH = −2.6 mA VOL Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 20 mA TA = 255C Typ TA v 855C Max Min Max 1.5 2.1 3.15 4.20 0.5 0.9 1.35 1.80 *555C v TA v 1255C Min Max 1.5 2.1 3.15 4.20 0.5 0.9 1.35 1.80 V 0.5 0.9 1.35 1.80 2.0 3.0 4.5 6.0 1.9 2.9 4.4 5.9 2.0 3.0 4.5 6.0 1.9 2.9 4.4 5.9 1.9 2.9 4.4 5.9 4.5 6.0 4.18 5.68 4.31 5.80 4.13 5.63 4.08 5.58 Unit V V 2.0 3.0 4.5 6.0 0.0 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VIN = VIH or VIL IOL = 2 mA IOL = 2.6 mA 4.5 6.0 0.17 0.18 0.26 0.26 0.33 0.33 0.40 0.40 V IIN Maximum Input Leakage Current VIN = 6.0 V or GND 6.0 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 6.0 1.0 10 40 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns) TA = 255C TA v 855C *555C v TA v 1255C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol Parameter tPLH, tPHL Maximum Propagation Delay, Input A or B to Y tTLH, tTHL Output Transition Time CIN Maximum Input Capacitance Test Conditions Min Typ Max Min Max Min Max Unit ns VCC = 5.0 V CL = 15 pF 3.5 15 20 25 VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V CL = 50 pF 20 12 8 7 100 27 20 17 125 35 25 21 155 90 35 26 VCC = 5.0 V CL = 15 pF 3 10 15 20 VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V CL = 50 pF 25 16 11 9 125 35 25 21 155 45 31 26 200 60 38 32 5 10 10 10 ns pF Typical @ 255C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 6) 10 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74HC1G32 tr INPUT A or B OUTPUT Y tf VCC 90% 50% 10% GND tPHL tPLH 90% 50% 10% tTLH tTHL Figure 4. Switching Waveforms INPUT OUTPUT CL* *Includes all probe and jig capacitance. A 1−MHz square input wave is recommended for propagation delay tests. Figure 5. Test Circuit ORDERING INFORMATION Device Package MC74HC1G32DFT1G SC70−5/SC−88A/SOT−353 (Pb−Free) MC74HC1G32DFT2G SC70−5/SC−88A/SOT−353 (Pb−Free) MC74HC1G32DTT1G SOT23−5/TSOP−5/SC59−5 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74HC1G32 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 5 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74HC1G32 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE H D 5X NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 0.20 C A B M 5 1 4 2 L 3 B S K DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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