MC74VHC1GU04 Single Unbuffered Inverter http://onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A V6 M G G M The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. This device consists of a single unbuffered inverter. In combination with others, or in the MC74VHCU04 Hex Unbuffered Inverter, these devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high−input impedance amplifier. For digital applications, the MC74VHC1G04 or the MC74VHC04 are recommended. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1GU04 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1GU04 to be used to interface 5 V circuits to 3 V circuits. 1 Features • • • • • • • High Speed: tPD = 2.5 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 105 Pb−Free Packages are Available NC 1 IN A 2 GND 5 5 V6 M G G 5 1 TSOP−5/SOT−23/SC−59 DT SUFFIX CASE 483 V6 M G 1 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. VCC PIN ASSIGNMENT 4 3 OUT Y Figure 1. Pinout 1 NC 2 IN A 3 GND 4 OUT Y 5 VCC FUNCTION TABLE 1 IN A OUT Y Figure 2. Logic Symbol A Input Y Output L H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 16 1 Publication Order Number: MC74VHC1GU04/D MC74VHC1GU04 MAXIMUM RATINGS Symbol Parameter VCC DC Supply Voltage VIN DC Input Voltage Value Unit *0.5 to )7.0 V −0.5 to +7.0 V *0.5 to VCC )0.5 V IIK DC Input Diode Current −20 mA IOK DC Output Diode Current $20 mA IOUT DC Output Sink Current $12.5 mA ICC DC Supply Current per Supply Pin $25 mA *65 to )150 °C VOUT DC Output Voltage TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature Under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD °C °C SC70−5/SC−88A (Note 1) TSOP−5 350 230 °C/W SC70−5/SC−88A TSOP−5 150 200 mW Level 1 Oxygen Index: 28 to 34 Latchup Performance UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) u1500 u200 N/A V Above VCC and Below GND at 125°C (Note 5) $500 mA ESD Withstand Voltage ILATCHUP 260 )150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 5.5 V VCC DC Supply Voltage 2.0 VIN DC Input Voltage 0.0 5.5 V DC Output Voltage 0.0 VCC V *55 )125 °C 0 0 100 20 ns/V VOUT TA Operating Temperature Range tr , tf VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Input Rise and Fall Time 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80 ° C 117.8 TJ = 90 ° C 1,032,200 TJ = 100 ° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130 ° C Junction Temperature 5C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 TIME, YEARS 100 1000 Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74VHC1GU04 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions (V) Min 1.7 2.4 3.6 4.4 VIH Minimum High−Level Input Voltage 2.0 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 2.0 3.0 4.5 5.5 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VOL Maximum Low−Level Output Voltage VIN = VIH or VIL TA ≤ 85°C TA = 25°C VCC Typ Max Min 1.7 2.4 3.6 4.4 0.3 0.6 0.9 1.1 VIN = VIH or VIL IOH = −50 mA 2.0 3.0 4.5 1.9 2.9 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA Max 2.0 3.0 4.5 −55 ≤ TA ≤ 125°C Min Max 1.7 2.4 3.6 4.4 0.3 0.6 0.9 1.1 V 0.3 0.6 0.9 1.1 1.9 2.9 4.4 1.9 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns TA ≤ 85°C TA = 25°C Symbol Parameter Test Conditions Typ Max Max Unit tPLH, tPHL Maximum Propagation Delay, Input A to Y VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 3.5 4.8 8.9 11.4 10.5 13.0 12.0 15.5 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 2.5 3.8 5.5 7.0 6.5 8.0 8.0 9.5 4 10 10 10 CIN Min Maximum Input Capacitance Min Max −55 ≤ TA ≤ 125°C Min pF Typical @ 25°C, VCC = 5.0V CPD 22 Power Dissipation Capacitance (Note 6) pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1GU04 A VCC 50% VCC GND tPHL tPLH VOH Y 50% VCC VOL Figure 4. Switching Waveforms OUTPUT INPUT CL* *Includes all probe and jig capacitance. A 1−MHz square input wave is recommended for propagation delay tests. Figure 5. Test Circuit ORDERING INFORMATION Device Package MC74VHC1GU04DFT1 SC70−5/SC−88A/SOT−353 M74VHC1GU04DFT1G SC70−5/SC−88A/SOT−353 (Pb−Free) MC74VHC1GU04DFT2 SC70−5/SC−88A/SOT−353 M74VHC1GU04DFT2G SC70−5/SC−88A/SOT−353 (Pb−Free) MC74VHC1GU04DTT1 TSOP−5/SOT23−5/SC59−5 M74VHC1GU04DTT1G TSOP−5/SOT23−5/SC59−5 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74VHC1GU04 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 mm Ǔ ǒinches MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1GU04 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE G NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 5 1 4 2 3 M B S K L DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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