SANYO ENA1079A

CPH6001A
Ordering number : ENA1079A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
CPH6001A
High-Frequency Low-Noise
Amplifier Applications
Features
•
•
•
•
High gain
: |S21e|2=11dB typ (f=1GHz)
High cut-off frequency : fT=6.7GHz typ
Small and slim 6-pin package
Large allowable collector dissipation (800mW max)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Conditions
Ratings
Unit
VCBO
VCEO
20
V
12
V
VEBO
IC
2
mA
800
mW
150
°C
--55 to +150
°C
When mounted on ceramic substrate (250mm2×0.8mm)
Junction Temperature
PC
Tj
Storage Temperature
Tstg
V
100
Product & Package Information
unit : mm (typ)
7018A-002
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
CPH6001A-TL-E
0.15
2.9
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
GA
0.05
1.6
0.2
0.6
2.8
0.2
0.6
Package Dimensions
TL
3
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : CPH6
Electrical Connection
1, 2, 5, 6
3
4
http://semicon.sanyo.com/en/network
71112 TKIM/O2109AB TKIM TC-00002102 No. A1079-1/8
CPH6001A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
min
typ
VCE=5V, IC=30mA
VCE=5V, IC=70mA
90
hFE2
VCE=5V, IC=30mA
5
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
| S21e |
Noise Figure
NF
2
1.0
μA
10
μA
180
70
6.7
GHz
0.95
VCB=5V, f=1MHz
Forward Transfer Gain
Unit
max
VCB=10V, IE=0A
VEB=1V, IC=0A
hFE1
DC Current Gain
Ratings
Conditions
1.5
pF
0.6
9
VCE=5V, IC=30mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
pF
11
dB
1.1
2.0
dB
Ordering Information
Package
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
IC -- VCE
50
0.35mA
90
0.30mA
40
Collector Current, IC -- mA
Collector Current, IC -- mA
45
IC -- VBE
100
0.25mA
35
0.20mA
30
25
0.15mA
20
0.10mA
15
10
0.05mA
5
80
70
60
50
40
30
20
V
CE =
5V
2V
Device
CPH6001A-TL-E
10
IB=0mA
0
0
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE -- V
9
0
0
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
7
0.1
IT00469
1.1
1.2
IT00470
f T -- IC
10
Gain-Bandwidth Product, f T -- GHz
5
DC Current Gain, hFE
3
2
VCE=5V
2V
100
7
5
3
2
10
=5V
VCE
7
5
2V
3
2
1.0
3
5 7 1.0
2
3
5 7 10
2
3
5
Collector Current, IC -- mA
7 100
2
3
IT00471
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT00472
No. A1079-2/8
CPH6001A
Cob -- VCB
10
f=1MHz
Reverse Transfer Capacitance, Cre -- pF
Output Capacitance, Cob -- pF
7
5
3
2
1.0
7
5
3
2
2
7
2
1.0
3
⏐
7
10
2
1.0
7
5
3
2
2
3
5
7
2
1.0
3
5
7
10
IT00474
NF -- IC
10
f=1GHz
5V
V CE=
12
3
Collector-to-Base Voltage, VCB -- V
f=1GHz
13
5
IT00473
C
9
8
11
2V
10
9
8
7
6
5
4
3
7
6
5
4
3
2
V CE=2V
2
1
1
0
1.0
5V
0
2
3
5
7
2
10
3
Collector Current, IC -- mA
5
7
100
IT00476
PC -- Ta
1000
7
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT00475
When mounted on ceramic substrate
(250mm2✕0.8mm)
900
Collector Dissipation, PC -- mW
5
Noise Figure, NF -- dB
2
5
Collector-to-Base Voltage, VCB -- V
S21e⏐2 -- I
14
Forward Transfer Gain, ⏐S21e⏐ -- dB
3
f=1MHz
7
0.1
0.1
0.1
0.1
Cre -- VCB
10
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00477
No. A1079-3/8
CPH6001A
S Parameters (Common emitter)
VCE=2V, IC=5mA, ZO=501
Freq(MHz)
°S11°
S11
--48.2
°S21°
12.990
S21
147.1
°S12°
0.044
S12
65.4
°S22°
0.871
S22
--26.6
0.678
--83.5
9.939
125.1
0.069
51.4
0.687
--42.9
0.557
--124.8
6.138
101.0
0.090
42.3
0.476
--57.0
600
0.514
--147.5
4.326
87.6
0.103
41.5
0.390
--63.7
800
0.497
--161.9
3.345
77.6
0.115
43.4
0.353
--69.1
1000
0.488
--173.8
2.740
68.9
0.129
45.3
0.337
--74.6
1200
0.484
177.2
2.324
61.3
0.144
46.7
0.335
--79.9
1400
0.484
169.3
2.030
54.5
0.150
47.8
0.340
--85.1
1600
0.483
161.1
1.804
48.3
0.177
48.3
0.346
--90.6
1800
0.482
153.5
1.638
42.3
0.196
48.1
0.355
--96.6
2000
0.487
146.4
1.493
36.6
0.215
47.4
0.367
--102.1
°S12°
0.038
S12
60.9
°S22°
0.767
S22
--38.0
100
0.799
200
400
VCE=2V, IC=10mA, ZO=501
Freq(MHz)
°S11°
100
0.683
S11
--65.5
°S21°
19.214
S21
137.7
200
0.550
--109.9
13.370
114.8
0.055
51.2
0.536
--55.8
400
0.440
--143.5
7.287
93.9
0.074
50.3
0.342
--69.5
600
0.443
--162.0
5.046
83.6
0.094
52.5
0.280
--75.8
800
0.457
--174.9
3.900
75.6
0.114
54.1
0.255
--81.6
1000
0.445
172.3
3.214
67.3
0.135
55.0
0.243
--87.7
1200
0.427
166.4
2.681
60.6
0.156
54.5
0.245
--92.6
1400
0.418
162.9
2.309
54.1
0.177
53.7
0.251
--97.6
1600
0.439
160.3
1.987
49.2
0.199
52.5
0.258
--102.6
1800
0.486
149.1
1.850
46.2
0.221
50.6
0.269
--107.7
2000
0.468
137.2
1.745
40.2
0.241
48.2
0.280
--112.9
°S22°
0.646
S22
--49.3
VCE=2V, IC=20mA, ZO=501
Freq(MHz)
°S11°
100
0.540
S11
--87.3
°S21°
24.533
S21
127.8
°S12°
0.032
S12
58.3
200
0.469
--125.4
14.920
107.9
0.045
55.2
0.411
--67.4
400
0.437
--157.2
8.009
91.0
0.067
59.1
0.256
--81.3
600
0.430
--171.6
5.453
81.5
0.091
61.2
0.210
--89.3
800
0.428
178.4
4.148
74.0
0.116
61.3
0.197
--95.4
1000
0.427
170.3
3.373
67.4
0.140
60.3
0.196
--100.5
1200
0.424
163.2
2.840
61.0
0.164
58.5
0.201
--105.2
1400
0.424
156.9
2.484
55.3
0.189
56.7
0.208
--109.8
1600
0.423
150.0
2.201
50.1
0.212
54.6
0.218
--114.2
1800
0.420
144.2
1.999
44.8
0.236
52.0
0.228
--119.0
2000
0.422
136.2
1.825
39.5
0.257
49.0
0.238
--123.8
VCE=2V, IC=30mA, ZO=501
Freq(MHz)
°S11°
100
0.487
S11
--101.2
°S21°
26.240
S21
123.1
°S12°
0.029
S12
58.4
°S22°
0.579
S22
--54.7
200
0.446
--136.8
15.309
104.6
0.041
58.0
0.356
--72.3
400
0.435
--163.5
8.071
89.3
0.065
62.9
0.223
--86.1
600
0.437
--176.4
5.488
80.4
0.090
64.2
0.186
--94.2
800
0.433
174.9
4.181
73.3
0.117
63.7
0.178
--100.3
1000
0.435
166.8
3.388
66.7
0.142
62.3
0.180
--105.7
1200
0.433
160.8
2.855
60.5
0.168
60.1
0.187
--110.1
1400
0.427
154.6
2.491
54.8
0.192
57.9
0.195
--114.4
1600
0.432
147.9
2.211
49.7
0.217
55.4
0.205
--118.8
1800
0.428
141.8
2.002
44.3
0.241
52.7
0.217
--123.3
2000
0.430
134.8
1.831
39.4
0.261
49.4
0.227
--127.9
No. A1079-4/8
CPH6001A
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=501
Freq(MHz)
°S11°
0.822
S11
--42.5
°S21°
13.211
S21
100
150.0
°S12°
0.035
S12
68.2
°S22°
0.901
S22
--20.9
200
0.684
--77.8
10.639
128.5
0.056
54.8
0.743
--34.0
400
0.516
--116.3
6.681
103.3
0.076
45.3
0.548
--44.9
600
0.481
--140.7
4.776
89.6
0.087
44.9
0.467
--49.9
800
0.477
--157.6
3.714
80.0
0.098
46.3
0.433
--54.2
1000
0.454
--172.9
3.055
71.0
0.110
48.5
0.419
--58.8
1200
0.435
179.1
2.572
63.0
0.124
50.1
0.416
--64.0
1400
0.431
173.9
2.213
56.2
0.138
51.7
0.419
--68.9
1600
0.449
169.6
1.922
50.7
0.154
52.8
0.424
--74.4
1800
0.495
157.8
1.789
46.3
0.171
52.8
0.431
--80.3
2000
0.482
145.3
1.669
39.6
0.188
52.4
0.440
--85.7
VCE=5V, IC=10mA, ZO=501
°S11°
0.690
S11
--57.0
°S21°
20.017
S21
100
141.0
°S12°
0.031
S12
64.0
°S22°
0.813
S22
--29.6
200
0.552
--93.8
14.091
118.9
0.046
54.8
0.599
--43.3
400
0.447
--133.6
8.190
97.6
0.064
52.8
0.419
--51.2
600
0.413
--154.2
5.664
86.0
0.080
55.0
0.355
--54.8
800
0.402
--167.0
4.314
77.6
0.098
56.9
0.329
--58.9
1000
0.399
--177.7
3.519
70.1
0.116
57.8
0.320
--63.5
1200
0.395
173.3
2.985
63.3
0.135
57.5
0.322
--68.5
1400
0.390
165.6
2.590
57.2
0.154
57.1
0.325
--73.5
1600
0.396
158.1
2.293
51.4
0.173
56.1
0.332
--78.8
1800
0.398
150.8
2.069
45.7
0.193
54.6
0.341
--84.4
2000
0.396
143.4
1.881
40.4
0.211
52.8
0.350
--90.0
Freq(MHz)
VCE=5V, IC=30mA, ZO=501
°S11°
0.481
S11
--85.7
°S21°
28.955
S21
100
127.1
°S12°
0.024
S12
61.8
°S22°
0.649
S22
--41.0
200
0.403
--123.6
17.443
107.7
0.035
60.6
0.427
--51.3
400
0.370
--155.2
9.326
91.5
0.056
64.6
0.292
--54.9
600
0.363
--170.7
6.348
82.3
0.078
66.1
0.256
--57.9
800
0.359
179.9
4.826
75.3
0.100
65.9
0.245
--62.2
1000
0.360
171.2
3.907
68.5
0.123
64.8
0.244
--67.4
1200
0.360
164.4
3.288
62.7
0.145
63.1
0.249
--72.7
1400
0.356
157.3
2.871
57.0
0.167
61.2
0.256
--78.0
1600
0.362
151.2
2.541
51.8
0.188
59.0
0.265
--83.6
1800
0.361
143.6
2.290
46.5
0.210
56.5
0.274
--89.4
2000
0.363
137.2
2.076
41.4
0.229
53.6
0.284
--95.1
Freq(MHz)
VCE=5V, IC=50mA, ZO=501
°S11°
0.426
S11
--101.6
°S21°
29.939
S21
100
122.4
°S12°
0.021
S12
62.6
°S22°
0.587
S22
--42.4
200
0.389
--137.3
17.324
104.3
0.032
63.2
0.385
--49.1
400
0.379
--163.4
9.137
89.5
0.053
67.9
0.277
--50.5
600
0.378
--176.3
6.195
80.8
0.076
68.9
0.252
--53.4
800
0.375
175.0
4.700
74.0
0.098
68.3
0.245
--58.2
1000
0.380
167.8
3.799
67.9
0.121
66.8
0.248
--64.0
1200
0.379
161.2
3.196
61.8
0.143
64.9
0.255
--69.8
1400
0.378
154.9
2.787
56.1
0.165
62.8
0.262
--75.4
1600
0.382
148.6
2.469
50.9
0.187
60.5
0.271
--81.4
1800
0.382
142.5
2.227
45.8
0.209
57.8
0.281
--87.6
2000
0.385
135.6
2.027
40.7
0.228
55.0
0.291
--93.3
Freq(MHz)
No. A1079-5/8
CPH6001A
Embossed Taping Specification
CPH6001A-TL-E
No. A1079-6/8
CPH6001A
Outline Drawing
CPH6001A-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1079-7/8
CPH6001A
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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This catalog provides information as of July, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1079-8/8