2SC5347A Ordering number : ENA1087A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347A High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz) : ⏐S21e⏐2=8dB typ (f=1GHz) : NF=1.8dB typ (f=1GHz) • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings Unit VCBO VCEO 20 V 12 V VEBO IC 2 Junction Temperature PC Tj Storage Temperature Tstg 150 When mounted on ceramic substrate (900mm2×0.8mm) 1.3 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 1.6 2.5 1.0 1 2 0.4 Packing Type: TD 4.0 1.5 2SC5347AE-TD-E 2SC5347AF-TD-E TD Marking LOT No. 4.5 CZ Top View V mA RANK 3 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 SANYO : PCP http://www.sanyosemi.com/en/network/ 90512 TKIM/D0308AB MSIM TC-00001778 No. A1087-1/8 2SC5347A Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=50mA VCE=5V, IC=50mA Output Capacitance Cob Reverse Transfer Capacitance Cre Forward Transfer Gain ⏐S21e⏐ Noise Figure NF Emitter Cutoff Current DC Current Gain Ratings min typ 60* 3 2 1.0 μA 10 μA 270* 4.7 1.3 VCB=10V, f=1MHz Unit max GHz 2.0 0.9 VCE=5V, IC=50mA, f=1GHz VCE=5V, IC=50mA, f=1GHz 6 8 1.8 pF pF dB 3.0 dB * : The 2SC5347A is classified by 50mA hFE as follows : Rank hFE D 60 to 120 E 90 to 180 F 135 to 270 Ordering Information Package Shipping 2SC5347AE-TD-E Device PCP 1,000pcs./reel 2SC5347AF-TD-E PCP 1,000pcs./reel memo Pb Free No. A1087-2/8 2SC5347A IC -- VCE 160 hFE -- IC 5 VCE=5V μA 1000 A 900μ A 800μ 700μA 120 100 3 600μA 500μA 80 400μA 300μA 60 40 200μA 100μA IB=0μA 20 0 0 2 4 6 8 100 5 1.0 2 3 5 7 10 2 3 5 7 100 f=1MHz VCE=5V 3 Output Capacitance, Cob -- pF 5 3 2 1.0 7 5 3 2 0.1 2 1.0 7 5 3 2 0.1 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 2 7 0.1 3 5 7 1.0 3 2 5 7 10 Collector-to-Base Voltage, VCB -- V ITR08158 Cre -- VCB 5 3 VCE=5V f=1GHz 10 2 Noise Figure, NF -- dB Reverse Transfer Capacitance, Cre -- pF 3 2 ITR08159 NF -- IC 12 f=1MHz 1.0 7 5 3 2 8 6 4 2 0.1 0 7 0.1 5 3 2 7 5 3 2 1.0 7 10 Collector-to-Base Voltage, VCB -- V ⏐S21e 2 -- I ⏐ 12 2 2 3 C 4 2 2 3 5 7 100 2 3 ITR08162 When mounted on ceramic substrate (900mm2✕0.8mm) 1.3 6 7 10 PC -- Ta 1.4 VCE=5V f=1GHz 8 5 Collector Current, IC -- mA ITR08160 10 0 1.0 7 1.0 3 Collector Dissipation, PC -- W Forward Transfer Gain, ⏐S21e⏐2 -- dB 3 IT14231 Cob -- VCB 5 7 2 Collector Current, IC -- mA IT14230 fT -- IC 10 2 7 10 Collector-to-Emitter Voltage, VCE -- V Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE Collector Current, IC -- mA 140 1.2 1.0 0.8 0.6 0.4 0.2 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 ITR08161 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08163 No. A1087-3/8 2SC5347A S Parameter S11e f=100MHz to 1200MHz(100MHz Step) S21e f=100MHz to 1200MHz(100MHz Step) VCE=5V IC=50mA j50 120° j25 j10 j100 1.2GHz 0.1GHz 90° j150 VCE=5V IC=50mA VCE=5V IC=20mA 150° 60° VCE=8V IC=70mA 30° j200 j250 1.2GHz 0 --j10 10 VCE=5V IC=20mA 25 50 4 ±180° 100 150 250 500 8 12 16 20 0 VCE=8V IC=70mA --j250 --j200 --j150 0.1GHz --30° --150° --j100 --j25 --60° --120° --j50 --90° ITR08164 S12e f=100MHz to 1200MHz(100MHz Step) ITR08165 S22e f=100MHz to 1200MHz(100MHz Step) VCE=5V IC=50mA 90° 1.2GHz j50 60° 120° VCE=8V IC=70mA 150° j25 VCE=5V IC=20mA j100 j150 30° j200 j250 j10 0.1GHz 0.04 0.08 0.12 0.16 0.2 ±180° 0 0 10 --j10 --90° ITR08166 100 150 250 500 VCE=8V IC=70mA 0.1GHz V =5V CE IC=20mA --j250 --j200 --j150 --j100 --j25 --60° --120° 50 VCE=5V IC=50mA 1.2GHz --30° --150° 25 --j50 ITR08167 No. A1087-4/8 2SC5347A S Parameters (Common emitter) VCE=5V, IC=50mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 ⏐S11⏐ 0.358 0.354 0.355 0.359 0.359 0.362 0.366 0.364 0.368 0.370 0.373 0.377 ∠S11 -141.0 -165.7 -176.8 174.9 169.3 163.9 158.5 153.5 149.8 145.3 141.5 137.6 ⏐S21⏐ 24.005 12.593 8.532 6.428 5.293 4.360 3.774 3.334 2.995 2.725 2.494 2.307 ∠S21 105.9 93.3 86.8 81.9 77.6 73.5 69.9 66.4 62.9 59.4 56.5 53.0 ⏐S12⏐ 0.027 0.047 0.068 0.089 0.110 0.130 0.151 0.171 0.191 0.210 0.230 0.248 ∠S12 68.4 72.7 74.1 73.7 72.8 71.7 70.2 68.6 66.7 65.1 63.0 61.4 ⏐S22⏐ 0.342 0.205 0.166 0.149 0.145 0.143 0.147 0.151 0.158 0.166 0.170 0.177 ∠S22 -63.0 -68.4 -69.7 -72.3 -75.3 -78.6 -82.1 -85.6 -90.1 -92.3 -95.1 -97.8 ∠S11 -115.4 -149.6 -165.7 -176.5 176.7 169.4 163.8 158.4 154.1 149.3 144.9 141.0 ⏐S21⏐ 21.095 11.567 7.917 5.974 4.845 4.065 3.522 3.114 2.798 2.548 2.333 2.158 ∠S21 113.8 97.4 89.3 82.5 78.4 73.9 70.0 66.4 62.5 58.9 55.5 51.8 ⏐S12⏐ 0.032 0.049 0.066 0.085 0.103 0.122 0.141 0.159 0.178 0.196 0.215 0.233 ∠S12 59.7 63.4 67.0 68.5 68.8 68.6 67.8 67.1 65.7 64.5 62.9 61.8 ⏐S22⏐ 0.479 0.300 0.242 0.214 0.203 0.199 0.198 0.201 0.204 0.212 0.218 0.224 ∠S22 -52.4 -58.0 -58.8 -60.0 -62.2 -64.7 -67.9 -71.2 -74.7 -78.1 -81.4 -84.1 ∠S11 -141.2 -165.7 -176.6 175.1 169.5 163.6 158.4 153.5 150.0 144.7 141.2 138.0 ⏐S21⏐ 25.505 13.334 9.025 6.819 5.481 4.612 3.980 3.524 3.148 2.866 2.629 2.424 ∠S21 105.1 93.0 86.7 81.8 77.8 73.7 70.2 66.7 63.3 60.0 57.0 53.4 ⏐S12⏐ 0.024 0.043 0.062 0.081 0.100 0.119 0.139 0.157 0.177 0.194 0.213 0.230 ∠S12 70.5 75.0 75.8 75.5 74.5 73.4 71.8 70.4 68.5 67.1 65.1 62.6 ⏐S22⏐ 0.348 0.233 0.204 0.191 0.187 0.185 0.188 0.191 0.198 0.204 0.208 0.215 ∠S22 -50.8 -48.9 -47.0 -48.0 -50.5 -53.6 -57.3 -60.9 -65.1 -69.0 -72.1 -75.3 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 ⏐S11⏐ 0.445 0.400 0.394 0.391 0.391 0.392 0.393 0.394 0.396 0.399 0.403 0.408 VCE=8V, IC=70mA, ZO=50Ω Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 ⏐S11⏐ 0.328 0.323 0.323 0.326 0.325 0.328 0.330 0.333 0.335 0.341 0.345 0.348 No. A1087-5/8 2SC5347A Embossed Taping Specification 2SC5347AE-TD-E, 2SC5347AF-TD-E No. A1087-6/8 2SC5347A Outline Drawing 2SC5347AE-TD-E, 2SC5347AF-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No. A1087-7/8 2SC5347A Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No. A1087-8/8