Ordering number: ENA2069 CMOS IC LE24CBK23MC Dual port EEPROM Two Wire Serial Interface (2K+2K EEPROM) Overview The dual port EEPROM series consists of two independent banks, and each bank can be controlled separately using dedicated control pins. The two banks can each be controlled separately, but share the internal power supply system. In addition, this product uses a 2-wire serial interface, and is the optimal device for realizing substantial reductions in system cost and mounting area, as well as low power consumption. This product also incorporates a combine mode that allows the two-bank configuration (2K bits + 2K bits) to be used as a pseudo-one-bank configuration (4K bits) by setting the COBM# pin to the low level. Together with the 16-byte page write function, this enables a reduction in the number of factory write processes. This product incorporates SANYO's high performance CMOS EEPROM technology and realizes high-speed operation and high-level reliability. The interface of this product is compatible with the I2C bus protocol, making it ideal as a nonvolatile memory for small-scale parameter storage. In addition, this product also supports DDC2TM, so it can also be used as an EDID data storage memory for display equipment. Functions • Capacity • Bank configuration • Single supply voltage • Interface • Operating clock frequency • Low power consumption : 2K bits (256 × 8 bits) + 2K bits (256 × 8 bits): 4k bits in total : 2-Bank (2k-bit + 2k-bit) : 2.5V to 5.5V : Two wire serial interface (I2C Bus*), VESA DDC2TM compliant** : 400kHz (max) : Standby: 5μA (max) : One-bank read: 0.8 mA (max.) Continued on next page. 2 * : I C Bus is a trademark of Philips Corporation. ** : DDC and EDID are trademarks of Video Electronics Standard Association (VESA). * This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. 62012 SY 20120111-S00002 No.A2069-1/21 LE24CBK23MC Continued from preceding page. • Automatic page write mode : 16 bytes • Read mode : Sequential read and random read • Erase/Write cycles : 106 cycles • Data Retention : 20 years • Default data : FFh(All address) • High reliability : Adopts SANYO’s proprietary symmetric memory array configuration (USP6947325) Noise filters connected to SCL1, SDA1, SCL2 and SDA2 pins Incorporates a feature to prohibit write operations under low voltage conditions. Package Dimensions unit:mm (typ) 3434 4.9 0.64 6.0 3.9 8 1 2 0.2 0.4 1.75 MAX 1.27 0.15 (1.5) (0.55) SANYO : SOP8J(200mil) Pin Assignment Pin Descriptions SCL2 1 8 VDD SDA2 2 7 WP# COBM# 3 6 SCL1 GND 4 5 (Top view) SDA1 PIN.1 SCL2 Clock input PIN.2 SDA2 Data input/output PIN.3 COBM# Bank/Combine mode change PIN.4 GND Ground PIN.5 SDA1 Data input/output PIN.6 SCL1 Clock input PIN.7 WP# Write protection PIN.8 VDD Power supply Bank2 Bank1 No.A2069-2/21 LE24CBK23MC Block Diagram Bank1 X decoder Address generator Serial controller Condition detector Bank2 X decoder Write controller Serial controller Input Buffer EEPROM Array (2K-bit) Serial-Parallel converter Address generator WP# High voltage generator Y decoder & Sense AMP Condition detector COBM# Bank Controller & Mode Decoder SDA2 I/O Buffer SDA1 I/O Buffer SCL2 Input Buffer SCL1 Input Buffer Write controller High voltage generator EEPROM Array (2K-bit) Y decoder & Sense AMP Serial-Parallel converter Description of Operation The Bank1 control signals are SCL1 and SDA1, and the Bank2 control signals are SCL2 and SDA2. The control signals for each bank can be controlled separately, regardless of the other bank’s status. This enables the product to be handled like two separate EEPROM mounted in a single package, which means that the Bank1 and Bank2 sides can be used simultaneously for two independent systems. Bank mode (2K bits + 2K bits) and combine mode (internally handled as 4K bits) can be switched using the COBM# pin. In combine mode, the Bank1 control signals (SCL1, SDA2) are used, and both Bank1 and Bank2 are accessed. This enables the two-bank configuration (2K bits + 2K bits) to be used as a pseudo-one-bank configuration (4K bits), which allows access to both the Bank1 and Bank2 areas using a single system of control signals (SCL1, SDA1). Data correlation is guaranteed between combine mode and bank mode, enabling operation while switching the mode, such as performing write in combine mode and read in bank mode. No.A2069-3/21 LE24CBK23MC Specifications Absolute Maximum Ratings Parameter Symbol Conditions Ratings Supply voltage DC input voltage Over-shoot voltage Storage temperature Below 20ns Tstg Unit -0.5 to +6.5 V -0.5 to +5.5 V -1.0 to +6.5 V -65 to +150 °C Note: If an electrical stress exceeding the maximum rating is applied, the device may be damaged. Operating Conditions Parameter Symbol Conditions Ratings Operating supply voltage Operating temperature Unit 2.5 to 5.5 V -40 to +85 °C DC Electrical Characteristics Parameter Symbol VDD=2.5V to 5.5V Conditions min Supply current at reading typ Unit max ICC11 f=400kHz 0.8 mA ICC12 f=400kHz 1.6 mA ICC21 f=400kHz, tWC=5ms 5 mA ICC22 f=400kHz, tWC=5ms 8 mA Standby current ISB VIN=VDD or GND 5 μA Input leakage current ILI VIN=GND to VDD -2.0 +2.0 μA Output leakage current (SDA) ILO VOUT=GND to VDD -2.0 +2.0 μA Input low voltage VIL VDD*0.3 V Input high voltage VIH Input low voltage(WP# pin) VIL_WP VDD < 4.0V Input high voltage(WP# pin) VIH_WP *1) VOL IOL=0.7mA, VDD=2.5V 0.2 V IOL=3.0mA, VDD=2.5V 0.4 V IOL=3.0mA, VDD=5.5V 0.4 V IOL=6.0mA, VDD=4.5V 0.6 V (when either Bank1 or Bank2 is read) Supply current at reading (when both Bank1 and Bank2 are read simultaneously) Supply current at writing (when either Bank1 or Bank2 is write) Supply current at writing (when both Bank1 and Bank2 are write simultaneously) 0.7 VDD*0.7 Output low level voltage V VDD*0.2 VDD*0.7 V V *1: The actual VIH value of the WP# pin is 2.0V (VDD = 5.0V). Capacitance/Ta=25°C, f=100kHz Parameter Symbol Conditions min typ max Unit In/Output capacitance CI/O VI/O=0V (SDA) 2 5 pF Input capacitance CI VIN=0V (Other SDA) 2 5 pF Note: This parameter is sampled and not 100% tested. No.A2069-4/21 LE24CBK23MC AC Electric Characteristics Fast Mode Parameter VDD=2.5V to 5.5V Symbol min typ unit max Slave mode SCL clock frequency fSCLS SCL clock low time tLOW 1200 ns SCL clock high time tHIGH 600 ns SDA output delay time tAA 100 SDA data output hold time tDH 100 ns Start condition setup time tSU.STA 600 ns Start condition hold time tHD.STA 600 ns Data in setup time tSU.DAT 100 ns Data in hold time tHD.DAT 0 ns Stop condition setup time tSU.STO 600 SCL, SDA rise time tR 300 ns SCL, SDA fall time tF 300 ns Bus release time tBUF Noise suppression time tSP Write cycle time tWC 400 900 kHz ns ns 1200 ns 100 ns 5 ms Standard Mode Parameter VDD=2.5V to 5.5V Symbol min typ Slave mode SCL clock frequency fSCLS SCL clock low time tLOW 4700 SCL clock high time tHIGH 4000 SDA output delay time tAA unit max 100 100 kHz ns ns 3500 ns SDA data output hold time tDH 100 ns Start condition setup time tSU.STA 4700 ns Start condition hold time tHD.STA 4000 ns Data in setup time tSU.DAT 250 ns Data in hold time tHD.DAT 0 ns Stop condition setup time tSU.STO 4000 ns SCL, SDA rise time tR 1000 SCL, SDA fall time tF 300 Bus release time tBUF Noise suppression time tSP Write cycle time tWC 4700 ns ns ns 100 ns 5 ms No.A2069-5/21 LE24CBK23MC Bus Timing tF tHIGH tLOW tR SCL tSP tSU.STA tHD.STA tHD.DAT tSU.DAT tSU.STO SDA/IN tSP tBUF tDH tAA SDA/OUT Write Timing tWC SCL SDA D0 Write data Acknowledge Stop condition Start condition No.A2069-6/21 LE24CBK23MC Pin Functions (Bank1) SCL1 (serial clock input) pin The SCL1 pin is the serial clock input pin used to access the Bank1 area, and processes signals at the rising and falling edges of the SCL1 clock signal. This pin must be pulled up by a resistor to the VDD level, and wired-ORed with another open drain (or open collector) output device for use. In combine mode, the SCL1 pin functions as the serial clock input pin that controls both Bank1 and Bank2 SDA1 (serial data input/output) pin The SDA1 pin is used to transfer serial data to the input/output of the Bank1 side area and it consists of a signal input pin and n-channel transistor open drain output pin. Like the SCL1 line, the SDA1 line must be pulled up by a resistor to the VDD level and wired-ORed with another open drain (or open collector) output device for use. (Bank2) SCL2 (serial clock input) pin The SCL2 pin is the serial clock input pin used to access the Bank2 area, and processes signals at the rising and falling edges of the SCL2 clock signal. This pin must be pulled up by a resistor to the VDD level, and wired-ORed with another open drain (or open collector) output device for use. In combine mode, the SCL2 pin is invalid. SDA2 (serial data input/output) pin The SDA2 pin is used to transfer serial data to the input/output of the Bank2 side area and it consists of a signal input pin and n-channel transistor open drain output pin. Like the SCL2 line, the SDA2 line must be pulled up by a resistor to the VDD level and wired-ORed with another open drain (or open collector) output device for use. (Common pin) WP# (Write protection) pin When the WP# pin is at the low level, write protection is enabled, and write is prohibited to all memory areas within both Bank1 and Bank2. Read operation can access all memory areas regardless of the WP# pin status. COBM# (Combine mode) pin The COBM# pin is used to switch the EEPROM internal operation between bank mode and combine mode. The EEPROM operates in bank mode when the COBM# pin is at the high level, and in combine mode when at the low level. Note that in combine mode, the SCL2 and SDA2 pins are handled as don’t care. No.A2069-7/21 LE24CBK23MC Functional Description 1. Start condition When the SCL line is at the high level, the start condition is established by changing the SDA line from high to low. The operation of the EEPROM as a slave starts in the start condition. 2. Stop condition When the SCL line is at the high level, the stop condition is established by changing the SDA line from low to high. When the device is set up for the read sequence, the read operation is suspended when the stop condition is received, and the device is set to standby mode. When it is set up for the write sequence, the capture of the write data is ended when the stop condition is received, and the EEPROM internal write operation is started. tSU.STA tHD.STA tSU.STO SCL SDA Stop condition Start condition 3. Data transfer Data is transferred by changing the SDA line while the SCL line is low. When the SDA line is changed while the SCL line is high, the resulting condition will be recognized as the start or stop condition. tSU.DAT tHD.DAT SCL SDA 4. Acknowledge During data transfer, 8 bits are transferred in succession, and then in the ninth clock cycle period the device on the system bus receiving the data sets the SDA line to low, and sends the acknowledge signal indicating that the data has been received. The acknowledge signal is not sent during an EEPROM internal write operation. SCL (EEPROM input) 1 8 9 SDA (Master output) SDA (EEPROM output) Start condition Acknowledge bit output tAA tDH No.A2069-8/21 LE24CBK23MC 5. Device addressing For the purposes of communication, the master device in the system generates the start condition for the slave device. Communication with a particular slave device is enabled by sending along the SDA bus the device address, which is 7 bits long, and the read/write command code, which is 1 bit long, immediately following the start condition. The upper four bits of the device address are called the device codes which, for this product, are fixed at “1010”. The LE24CBK23MC has internal 3-bit slave addresses (Bank1: SA2 and SA1, Bank2: SB2 and SB1) following the device code, and the default slave addresses are set to SA0 = 0, SA1 = 0, SA2 = 0 and SB0 = 0, SB1 = 0, SB2 = 0, respectively. When the device code + slave address input from SDA are compared with this product’s device code and the slave address set during mounting and are found to match them, this product sends back the acknowledge signal in the ninth clock cycle period, and performs the read or write operation in accordance with the read or write command code. When there is no match, the EEPROM enters standby mode. When executing a read operation immediately after switching the slave device, the random read command should be used. Slave Address Device code Bank1 1 0 SA2 0 1 SA1 SA0 or A8 MSB R/W LSB Device Address word - The default internal slave address is set to SA2 = 0, SA1 = 0, SA0 = 0. - In bank mode (2K bits), the effective address bits are A7 to A0, and the effective slave address bits are SA2, SA1 and SA0. - In combine mode (2K bits + 2K bits), the effective address bits are A8 to A0, and the slave address bits SA2 and SA1 are don’t care. A8 = 0: Selects the Bank1 area,; A8 = 1: Selects the Bank2 area. Bank mode (COBM# = “H”) Effective address Slave address A7 – A0 SA2, SA1, SA0 A8 – A0 SA2, SA1 A8 = 0: 1 bank selection area But SA2 and SA1 are Don’t care Combine mode (COBM# = “L”) A8 = 1: 2 bank selection area Slave Address Device code Bank2 1 0 1 SB2 0 SB1 MSB SB0 R/W LSB Device Address word - In combine mode (2K bits + 2K bits), Bank2 communication is invalid. Bank mode (COBM# = “H”) Combine mode (COBM# = “L”) Effective address Slave address A7 – A0 SB2, SB1, SB0 - - No.A2069-9/21 LE24CBK23MC 6 Internal mode The EEPROM functions in bank mode when the COBM# pin is at the high level, and in combine mode when the COBM# pin is at the low level. 6-1. Bank mode The EEPROM functions in bank mode when the COBM# pin is at the high level. In bank mode, each bank (Bank1, Bank2) is controlled separately using dedicated control signals. The two banks are independent, and can be controlled separately regardless of the other bank’s status. This enables the EEPROM to be handled as two independent EEPROM devices incorporated in a single package. In turn, this makes it possible for the Bank1 and Bank2 sides to be connected to the MCU of separate systems. LE24CBK23MC 00h SCL1 SDA1 Bank1 (2k-bit) FFh WP# 00h SCL2 SDA2 Bank2 (2k-bit) FFh 6-2. Combine mode The EEPROM functions in combine mode when the COBM# pin is at the low level. In combine mode, the Bank1 control signals (SCL1, SDA1) are used to control both Bank1 and Bank2. Combine mode uses the two-bank configuration (2K bits + 2K bits) as a pseudo-one-bank configuration (4K bits). In combine mode, the Bank2 control signals (SCL2, SDA2) are handled as don’t care. In combine mode the memory area is processed as a single 4K-bit bank, so the address MSB changes from A7 to A8, and A8 becomes an effective address bit. Set A8 = 0 to control the Bank1 area, or A8 = 1 to control the Bank2 area. Data correlation is guaranteed between combine mode and bank mode, enabling operation while switching the mode, such as performing write in combine mode and read in bank mode. Slave Address Device code Bank1 1 0 1 X 0 MSB X A8 R/W X:Don’t care LSB Device Address word LE24CBK23MC SCL1 SDA1 WP# 000h Bank1 (2k-bit) 0FFh 100h Bank2 (2k-bit) SCL2 SDA2 1FFh No.A2069-10/21 LE24CBK23MC 7 EEPROM write operation 7-1. Byte writing When the EEPROM receives the 7-bit device address and write command code “0” after the start condition, it generates an acknowledge signal. After this, if it receives the 8-bit word address, generates an acknowledge signal, receives the 8-bit write data, generates an acknowledge signal and then receives the stop condition, the internal write operation of the EEPROM in the designated memory address will start. Rewriting is completed in the tWC period after the stop condition. During an EEPROM internal write operation, no input is accepted and no acknowledge signals are generated. SDA 1 0 1 S0 0 S2 S1 / W A8 Data A7 A6 A5 A4 A3 A2 A1 A0 ACK R/W D7 D6 D5 D4 D3 D2 D1 D0 Stop Start Word Address ACK ACK Bank mode : S2, S1, S0 is effective. Combine mode : A8 is effective. S2 and S1 are Don’t care Access from master 7-2. Page writing This product enables pages with up to 16 bytes to be written. The basic data transfer procedure is the same as for byte writing: Following the start condition, the 7-bit device address and write command code “0,” word address (n), and data (n) are input in this order while confirming acknowledge “0” every 9 bits. The page write mode is established if, after data (n) is input, the write data (n+1) is input without inputting the stop condition. After this, the write data equivalent to the largest page size can be received by a continuous process of repeating the receiving of the 8-bit write data and generating the acknowledge signals. At the point when the write data (n+1) has been input, the lower 4 bits (A0-A3) of the word addresses are automatically incremented to form the (n+1) address. In this way, the write data can be successively input, and the word address on the page is incremented each time the write data is input. If the write data exceeds 16 bytes or the last address of the page is exceeded, the word address on the page is rolled over. Write data will be input into the same address two or more times, but in such cases the write data that was input last will take effect. Finally, the EEPROM internal write operation corresponding to the page size for which the write data is received starts from the designated memory address when the stop condition is received. 1 0 1 S0 0 S2 S1 / W A8 Data(n) A7 A6 A5 A4 A3 A2 A1 A0 ACK R/W Data(n+1) D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 ACK ACK D1 D0 ACK Data(n+x) D7 D6 D1 D0 D7 D6 D1 D0 ACK Bank mode : S2, S1, S0 is effective. Combine mode : A8 is effective. S2 and S1 are Don’t care D7 D6 D1 D0 D7 D6 ACK D1 D0 Stop SDA Start Memory Address(n) ACK Access from master No.A2069-11/21 LE24CBK23MC 7-3. Acknowledge polling Acknowledge polling is used to find out when the EEPROM internal write operation is completed. When the stop condition is received and the EEPROM starts rewriting, all operations are prohibited, and no response can be given to the signals sent by the master device. Therefore, in order to find out when the EEPROM internal write operation is completed, the start condition, device address and write command code are sent from the master device to the EEPROM (slave device), and the response of the slave device is detected. In other words, if the slave device does not send the acknowledge signal, it means that the internal write operation is in progress; conversely, if it does send the acknowledge signal, it means that the internal write operation has been completed. 0 1 S0 0 S2 S1 / W A8 1 During Write 0 1 NO ACK R/W Bank mode : S2, S1, S0 is effective. Combine mode : A8 is effective. S2 and S1 are Don’t care S0 0 S2 S1 / W A8 End of Write Start 1 Start SDA Start During Write NO ACK R/W 1 0 1 S0 0 S2 S1 / W A8 ACK R/W Access from master No.A2069-12/21 LE24CBK23MC 8 EEPROM read operations 8-1. Current address reading The address equivalent to the memory address accessed last +1 is held as the internal address of the EEPROM for both write* and read operations. Therefore, provided that the master device has recognized the position of the EEPROM address pointer, data can be read from the memory address with the current address pointer without specifying the word address. As with writing, current address reading involves receiving the 7-bit device address and read command code “1” following the start condition, at which time the EEPROM generates an acknowledge signal. After this, the 8-bit data of the (n+1) address is output serially starting with the highest bits. After the 8 bits have been output, by not sending an acknowledge signal and inputting the stop condition, the EEPROM completes the read operation and is set to standby mode. If the previous read address is the last address, the address for the current address reading is rolled over to become address 0. * The current address assigned after a page write is the number of bytes written at the designated word address plus 1 if the volume of the write data is greater than 1 byte or less than or equal to 16 bytes, and is the designated word address if the volume of the write data is 16 bytes or more. If the last address of the page (A3 to A0 = 1111b) is specified as the word address for a byte write, the internal address after the write becomes the first address in that page (A3 to A0 = 0000b). SDA 1 0 1 Data(Current Address) S0 0 S2 S1 / R A8 Stop Start Device Address D7 D6 D5 D4 D3 D2 D1 D0 NO ACK ACK R/W Bank mode : S2, S1, S0 is effective. Combine mode : A8 is effective. S2 and S1 are Don’t care Access from master 8-2. Random read Random read is a mode in which any memory address is specified and its data read. The address is specified by a dummy write input. First, when the EEPROM receives the 7-bit device address and write command code “0” following the start condition, it generates an acknowledge signal. It then receives the 8-bit word address, and generates an acknowledge signal. Through these operations, the word address is loaded into the address counter inside the EEPROM. Next, the start condition is input again and the current read is initiated. This causes the data of the word address that was input using the dummy write input to be output. If, after the data is output, an acknowledge signal is not sent and the stop condition is input, reading is completed, and the EEPROM returns to standby mode. 0 1 S0 0 S2 S1 / W A8 A7 A6 A5 A4 A3 A2 A1 A0 ACK R/W Dummy Write Bank mode : S2, S1, S0 is effective. Combine mode : A8 is effective. S2 and S1 are Don’t care 1 ACK 0 1 Data(n) S0 0 S2 S1 / R A8 D7 Stop 1 Device Address Word Address Start SDA Start Device Address D0 NO ACK ACK R/W Current Address Read Access from master No.A2069-13/21 LE24CBK23MC 8-3. Sequential read In this mode, the data is read continuously, and sequential read operations can be performed with both current address read and random read. If, after the 8-bit data has been output, acknowledge “0” is input and reading is continued without issuing the stop condition, the address is incremented, and the data of the next address is output. If acknowledge “0” continues to be input after the data has been output in this way, the data is successively output while the address is incremented. When the last address is reached, it is rolled over to address 0, and the data continues to be read. As with current address read and random read, the operation is completed by inputting the stop condition without sending an acknowledge signal. 1 0 1 S0 0 S2 S1 / R A8 Data(n) D7 D6 D1 D0 ACK R/W Bank mode : S2, S1, S0 is effective. Combine mode : A8 is effective. S2 and S1 are Don’t care Data(n+x) Data(n+1) D7 D6 ACK D1 D0 D7 D6 ACK D1 D0 Stop SDA Start Device Address NO ACK Access from master No.A2069-14/21 LE24CBK23MC Application Notes 1) Software reset function Software reset (start condition + 9 dummy clock cycles + start condition), shown in the figure below, is executed in order to avoid erroneous operation after power-on and to reset while the command input sequence. During the dummy clock input period, the SDA bus must be opened (set to high by a pull-up resistor). Since it is possible for the ACK output and read data to be output from the EEPROM during the dummy clock period, forcibly entering H will result in an overcurrent flow. Note that this software reset function does not work during the internal write cycle. Dummy clock ×9 SCL 1 2 8 9 SDA Start condition Start condition 2) Pull-up resistor of SDA pin Due to the demands of the I2C bus protocol function, the SDA pin must be connected to a pull-up resistor (with a resistance from several kΩ to several tens of kΩ) without fail. The appropriate value must be selected for this resistance (RPU) on the basis of the VIL and IIL of the microcontroller and other devices controlling this product as well as the VOL–IOL characteristics of the product. Generally, when the resistance is too high, the operating frequency will be restricted; conversely, when it is too low, the operating current consumption will increase. RPU maximum resistance The maximum resistance must be set in such a way that the bus potential, which is determined by the sum total (IL) of the input leaks of the devices connected to the SDA bus and by RPU, can completely satisfy the input high level (VIH min) of the microcontroller and EEPROM. However, a resistance value that satisfies SDA rise time tR and fall time tF must be set. RPU maximum value = (VDD - VIH)/IL Example: When VDD=3.0V and IL= 2μA RPU maximum value = (3.0V − 3.0V × 0.8)/2μA = 300kΩ RPU minimum value A resistance corresponding to the low-level output voltage (VOL max) of SANYO’s EEPROM must be set. RPU minimum value = (VDD − VOL)/IOL RPU SDA Master Device IL EEPROM CBUS IL Example: When VDD=3.0V, VOL = 0.4V and IOL = 1mA RPU minimum value = (3.0V − 0.4)/1mA = 2.6kΩ Recommended RPU setting RPU is set to strike a good balance between the operating frequency requirements and power consumption. If it is assumed that the SDA load capacitance is 50pF and the SDA output data strobe time is 500ns, RPU will be about RPU = 500ns/50pF = 10kΩ. No.A2069-15/21 LE24CBK23MC 3) Precautions when turning on the power This product contains a power-on reset circuit for preventing the inadvertent writing of data when the power is turned on. The following conditions must be met in order to ensure stable operation of this circuit. No data guarantees are given in the event of an instantaneous power failure during the internal write operation. Item VDD=2.5 to 5.5V Symbol min Power rise time tRISE Power off time tOFF Power bottom voltage Vbot typ unit max 100 10 ms ms 0.2 V tRISE VDD tOFF Vbot 0V Notes: 1) The SDA pin must be set to high and the SCL pin to low or high. 2) Steps must be taken to ensure that the SDA and SCL pins are not placed in a high-impedance state. A. If it is not possible to satisfy the instruction 1 in Note above, and SDA is set to low during power rise After the power has stabilized, the SCL and SDA pins must be controlled as shown below, with both pins set to high. VDD VDD tLOW SCL SCL SDA SDA tDH tSU.DAT tSU.DAT B. If it is not possible to satisfy the instruction 2 in Note above After the power has stabilized, software reset must be executed. C. If it is not possible to satisfy the instructions both 1 and 2 in Note above After the power has stabilized, the steps in A must be executed, then software reset must be executed. 4) Noise filter for the SCL and SDA pins This product contains a filter circuit for eliminating noise at the SCL and SDA pins. Pulses of 100ns or less are not recognized because of this function. 5) Function to inhibit writing when supply voltage is low This product contains a supply voltage monitoring circuit that inhibits inadvertent writing below the guaranteed operating supply voltage range. The data is protected by ensuring that write operations are not started at voltages (typ.) of 1.3V and below. 6) Slave address setting This product does not have a slave address pin, but holds the slave address S0, S1 and S2 information internally. At the default, the slave address of this product is set to S0 = 0, S1 = 0, S2 = 0. During device addressing, execute this slave address following the device code. No.A2069-16/21 LE24CBK23MC 7) Precautions when write protects operation. Write to all memory areas is prohibited when the WP# pin of this product is set to the low level. The WP# pin must be held at the low level during the entire period from the start condition to the stop condition, and the following conditions must also be observed in order to ensure reliable write protect functions. Parameter Symbol WP# set-up time tSU.WP tHD.WP WP# hold time VDD=2.5V to 5.5V typ min unit max 600 - - ns 600 - - ns tSU.WP tHD.WP WP# SCL SDA Stop condition Start condition 8) Precautions when changing the mode These products selects bank mode operation or combine mode operation according to the COBM# pin status. Changing the COBM# pin status while this product is active (during access to Bank1 or Bank2, including during the write period) is prohibited. The following conditions must be observed in order to ensure reliable access functions in each mode. Parameter Symbol VDD=2.5V to 5.5V typ min unit max COBM# set-up time tSU.COBM 10 - - μs COBM# hold time tHD.COBM 5 - - ms COBM# tSU.COBM tHD.COBM SCL1 or SCL2 SDL1 or SDL2 Start condition Stop condition No.A2069-17/21 LE24CBK23MC 9) Writing with a ROM writer from the combine mode This product enables two-bank configuration (2K bits + 2K bits) to be used as a pseudo-one-bank configuration (4K bits) by accessing the memory areas from the control port (SCLC, SDAC). As a result, data can be written using a ROM writer with the EEPROM serving as a regular 4K-bit EEPROM. Fix the port 1 and port 2 pins to high or low. LE24C04x (Standard 4k-bit EEPROM) LE24CBK23MC SCL2 1 8 VDD S0 1 8 VDD SDA2 2 7 WP# S1 2 7 WP COBM# 3 6 SCL1 S2 3 6 SCL GND 4 5 SDA1 GND 4 5 SDA The Pin 3 (slave pin: S2) function of a regular 4K-bit EEPROM product is assigned to the COBM# pin of the LE24CBK23MC. Combine mode is entered by setting the COBM# pin to the low level. In combine mode, the SCL2 and SDA2 pins are don’t care (high level or low level or OPEN). ROM writer connection example LE24CBK23MC (Don’t care) Connect to GND level SCL2 1 8 VDD SDA2 2 7 WP# COBM# 3 6 SCL1 GND 4 5 SDA1 Slave Address Device code Combine mode (From SCL1/SDA1) 1 0 1 0 SA2 SA1 MSB A8 R/W LSB Device Address word In combine mode, the slave address (SA2, SA1) is don’t care, and any combination can be entered (SA2 = 1, SA1 = 1 or SA2 = 1, SA1 = 0 or SA2 = 0, SA1 = 1 or SA2 = 0, SA1 = 0). Memory Area (4K-bit) 000h Bank1 (2k-bit) A8=0 Bank2 (2k-bit) A8=1 0FFh The MSB address in combined mode is A8. A8 is used to select the Bank1 or Bank2 area. Set A8 = 0 to control the Bank1 area, or A8 = 1 to control the Bank2 area. 100h 1FFh No.A2069-18/21 LE24CBK23MC 10) System Configuration Image (HDMI System) HDMI connector This product can support two HDMI ports simultaneously. Both ports can be accessed at the same time when performing read operations of the ports. All the data can be written together from a image processor into the areas allocated to the two ports from the control port in a single operation. DDC Port 1 LE24CBK23MC Image Processor Port 2 Level Shifter I2C Level Shifter I2C HDMI connector TMDS HDMI Receiver DDC TMDS LCD-TV No.A2069-19/21 LE24CBK23MC 11) Peripheral Circuit Diagram Example of connection with HDMI receiver VDD(3V)*1 *2 DDC+5V *2 *5 RPU DDC_CLK HDMI Connector 8:VDD DDC_DAT LE24CBK23MC GND 6:SCL1 7:WP# 5:SDA1 *2 DDC+5V *4 *5 RPU 3:COBM# DDC_CLK HDMI Connector 1:SCL2 DDC_DAT 2:SDA2 GND 4:GND *5 RPU VDD(3V) *3 *3 Level Shifter Level Shifter SCL1(3V) SDA1(3V) HDMI Receiver SCL2(3V) SDA2(3V) *1: System power supply (3V) for HDMI receiver, etc. *2: Reverse-current preventing diode This device can be operated by supplying power from any of the connected HDMI connectors (DDC + 5V) or the system power supply (3V). However, the supply voltage must be set so that the voltage stepped-down by the reverse-current preventing diode is within the guaranteed operation voltage range of this device. *3: Level shifter When connecting the 5V HDMI connector side with a 3V system, level shifters must generally be inserted. However, this is not necessary when the HDMI receiver supports 5V input signals. *4: Write protection In general, use with HDMI applications assumes that this device is used as read-only after mounting. The write protection function is enabled to prevent write due to mistaken access, by setting the WP# pin to the ground level. When reconfiguration is required, write operation is enabled by connecting the WP# pin to the logic high level using a jumper, etc. *5: Pull-up resistors for the I2C and DDC interfaces. See item 2) in the Application Notes for the resistance value settings. No.A2069-20/21 LE24CBK23MC SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of Jun, 2012. Specifications and information herein are subject to change without notice. PSNo.A2069-21/21