STMICROELECTRONICS 2N2905AHR

2N2905AHR
Hi-Rel PNP bipolar transistor 60 V, 0.6 A
Datasheet — production data
Features
BVCEO
60 V
IC (max)
0.6 A
HFE at 10 V - 150 mA
> 100
Operating temperature range
-65°C to +200°C
■
Hi-Rel PNP bipolar transistor
■
Linear gain characteristics
■
ESCC qualified
■
European preferred part list - EPPL
■
Radiation level: lot specific total dose contact
marketing for specified level
TO-39
Figure 1.
Internal schematic diagram
Description
The 2N2905AHR is a silicon planar epitaxial PNP
transistor in a TO-39 package. It is specifically
designed for aerospace Hi-Rel applications, and
ESCC qualified in accordance with the 5202-002
specification. In case of discrepancies between
this datasheet and ESCC detailed specification,
the latter prevails.
Table 1.
Device summary
Order codes
Package
Lead finish
Marking
Type
EPPL
Packaging
2N2905AHR
TO-39
Gold
Solder Dip
520200201
520200202
ESCC Flight
Yes
Strip pack
2N2905AHR
TO-39
Gold
2N2905AT1
Engineering
model
October 2012
This is information on a product in full production.
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Strip pack
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Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-base voltage (IE = 0)
-60
V
VCEO
Collector-emitter voltage (IB = 0)
-60
V
VEBO
Emitter-base voltage (IC = 0)
-5
V
Collector current
-0.6
A
PTOT
Total dissipation at Tamb ≤ 25 °C
Total dissipation at Tc ≤ 25 °C
0.6
3
W
W
TSTG
Storage temperature
-65 to 200
°C
200
°C
Value
Unit
58
291
°C/W
°C/W
IC
TJ
Table 3.
Symbol
RthJC
RthJA
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2N2905AHR
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
__
Thermal resistance junction-ambient
__
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max
max
2N2905AHR
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
ICBO
Collector-base cut-off
current (IE = 0)
VCB = -50 V
VCB = -50 V, TC = 150 °C
Collector-base
breakdown voltage
(IE = 0)
IC = -10 µA
-60
V
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
IC = -10 mA
-60
V
-5
V
V(BR)CBO
Test conditions
Min.
Typ.
Max.
Unit
-10
-10
nA
µA
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = -10 µA
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = -150 mA, IB = -15 mA
-0.4
V
VBE(sat) (1)
Base-emitter
saturation voltage
IC = -150 mA, IB = -15 mA
-1.3
V
DC current gain
IC = -0.1 mA, VCE = -10 V
IC = -1 mA, VCE = -10 V
IC = -150 mA, VCE = -10 V
IC = -500 mA, VCE = -10 V
hfe
Small signal current
gain
VCE = -20 V, IC = -50 mA
f = 100 MHz
CCBO
Output capacitance
(IE = 0)
VCB = -10 V
100 kHz ≤ f ≤1 MHz
8
pF
ton
Turn-on time
VCC = -30 V, IC = -150 mA
IB1 = -15 mA
45
ns
toff
Turn-off time
VCC = -30 V, IC = -150 mA
IB1 = -IB2 = -15 mA
300
ns
hFE (1)
75
100
100
50
300
2
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
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Electrical characteristics
2.1
2N2905AHR
Electrical characteristics (curves)
Figure 2.
DC current gain (VCE=1 V)
Figure 3.
!-V
Figure 4.
Collector emitter saturation
voltage
!-V
Figure 5.
!-V
2.2
Test circuit
Figure 6.
Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
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DC current gain (VCE=10 V)
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Base emitter saturation
voltage (hFE=10)
!-V
2N2905AHR
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
Table 5.
2N2905AHR
TO-39 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
12.70
14.20
B
0.40
0.49
C
0.58
0.74
D
6.00
6.40
8.15
8.25
F
9.10
9.20
G
4.93
5.23
H
0.85
0.95
I
0.75
0.85
L
42°
48°
E
-
Figure 7.
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TO-39 drawing
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2N2905AHR
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Revision history
Revision history
Table 6.
Document revision history
Date
Revision
Changes
14-Jan-2009
1
Initial release
05-Jan-2010
2
Modified Table 1 on page 1
04-Oct-2012
3
Minor text changes.
Section 2.1: Electrical characteristics (curves) has been added.
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2N2905AHR
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