STMICROELECTRONICS 2STA2120

2STA2120
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■
High breakdown voltage VCEO = 250 V
■
Complementary to 2STC5948
■
Fast-switching speed
■
Typical ft = 25 MHz
■
Fully characterized at 125 oC
3
2
Applications
■
1
TO-3P
Audio power amplifier
Description
Figure 1.
Internal schematic diagram
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1.
Device summary
Order code
Marking
Package
Packaging
2STA2120
2STA2120
TO-3P
Tube
May 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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8
2STA2120
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Value
Unit
VCBO
Collector-base voltage (IE = 0)
-250
V
VCEO
Collector-emitter voltage (IB = 0)
-250
V
VEBO
Emitter-base voltage (IC = 0)
-6
V
Collector current
-17
A
Collector peak current (tP < 5ms)
-34
A
PTOT
Total dissipation at Tc = 25 °C
200
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
0.625
°C/W
IC
ICM
TJ
Table 3.
Symbol
Rthj-case
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Parameter
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
______________ __max
2STA2120
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = -250 V
-5
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -6 V
-5
µA
Collector-emitter breakdown
V(BR)CEO(1) voltage (I = 0)
B
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = -50 mA
-250
V
IC = -100 µA
-250
V
-6
V
Emitter-base breakdown voltage
IE = -1 mA
V(BR)EBO(1) (I = 0)
C
VCE(sat) (1)
VBE (1)
hFE
fT
Collector-emitter saturation
voltage
IC = -8 A
IB = -800 mA
Base-emitter on voltage
IC = -7 A
V CE = -5 V
IC = -1 A
V CE = -5 V
80
IC = -7 A
V CE = -5 V
35
IC = -1 A
V CE = -5 V
DC current gain
Transition frequency
-3
V
-1.5
V
160
25
MHz
1. Pulsed duration = 300 µs, duty cycle ≤1.5%
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2STA2120
Electrical characteristics
2.1
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Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation
voltage
Figure 7.
Base-emitter on voltage
2STA2120
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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2STA2120
Package mechanical data
TO-3P Mechanical data
DIM.
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
L2
P
Q
Q1
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MIN.
4.6
1.45
1.20
0.80
1.80
2.80
0.55
19.70
mm.
TYP
1.50
1.40
1
0.60
19.90
13.90
15.40
5.15
19.50
18.20
3.10
MAX.
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
15.80
13.60
9.60
5.45
20
3.50
18.40
5
3.80
5.75
20.50
18.60
3.30
2STA2120
4
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
Changes
23-Nov-2007
1
Initial release
09-May-2008
2
Added new graphics.
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2STA2120
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