STMICROELECTRONICS 2SC5200

2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
■
High breakdown voltage VCEO = 230 V
■
Typical fT = 30 MHz
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Application
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Audio power amplifier
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Description
1
2
3
TO-264
This device is a NPN transistor manufactured
using new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
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Figure 1.
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Internal schematic diagram
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Table 1.
Device summary
Order code
Marking
Package
Packaging
2SC5200
2SC5200
TO-264
Tube
September 2009
Doc ID 16310 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical ratings
1
2SC5200
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Unit
VCBO
Collector-base voltage (IE = 0)
230
V
VCEO
Collector-emitter voltage (IB = 0)
230
V
VEBO
Emitter-base voltage (IC = 0)
5
V
Collector current
15
A
Collector peak current
30
PTOT
Total dissipation at TC = 25 °C
150
TSTG
Storage temperature
IC
ICM
Table 3.
Parameter
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Thermal resistance junction-case max
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Symbol
RthJC
W
150
Thermal data
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A
-55 to 150
Operating junction temperature
TJ
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Value
°C
°C
Value
Unit
0.83
°C/W
2SC5200
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 230 V
5
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
5
µA
Collector-emitter breakdown
IC = 50 mA
voltage (IB = 0)
230
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
230
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
Collector-emitter saturation
voltage
IC = 8 A
VBE
Base-emitter voltage
IC = 7 A
hFE
DC current gain
IC = 1 A
IC = 7 A
ton
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
V(BR)CEO(1)
V(BR)CBO
V(BR)EBO(1)
VCE(sat)(1)
fT
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IB = 800 mA
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCC = 60 V IC = 5A
IB1= -IB2 = 0.5 A
Transition frequency
IC = 1 A
VCE = 5 V
Collector-base capacitance
(IE = 0)
VCB = 10 V f = 1 MHz
55
35
80
V
3
V
1.5
V
120
0.24
4.7
0.6
µs
µs
µs
30
MHz
150
pF
1. Pulsed: pulse duration = 300 µs, duty cycle ≤ 1.5%
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Electrical characteristics
2.1
2SC5200
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
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2.2
Test circuit
Figure 4.
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Resistive load switching test circuit
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1. Fast electronic switch
2. Non-inductive resistor
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2SC5200
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
2SC5200
TO-264 Mechanical data
mm.
Dim.
A
Min.
4.80
A1
2.50
b
0.90
Typ
3.10
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1.0
b1
1.25
2.5
b2
2.8
c
0.50
D
25.6
E
19.80
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5.15
L
19.50
L1
2.30
øP
3.55
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0.60
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Max.
5.20
Doc ID 16310 Rev 1
0.85
Pr
26.4
20.20
5.75
20.50
2.70
3.65
2SC5200
4
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
28-Sep-2009
1
Changes
Initial release.
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2SC5200
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