STMICROELECTRONICS STPS15H100C

STPS15H100C
High voltage power Schottky rectifier
Main product characteristics
IF(AV)
2 x 7.5 A
VRRM
100 V
Tj (max)
175° C
VF(max)
0.67 V
A1
K
A2
K
K
Features and Benefits
■
Negligible switching losses
■
Low leakage current
■
Good trade off between leakage current and
forward voltage drop
■
Low thermal resistance
■
Avalanche capability specified
A2
K
A1
A1
STPS15H100CB
DPAK
A2
STPS15H100CH
IPAK
Description
Dual center tab Schottky rectifier suited for
switched mode power supply and high frequency
DC to DC converters.
Packaged in DPAK and IPAK, this device is
intended for use in high frequency inverters.
Table 1.
Absolute Ratings (limiting values, per diode)
Symbol
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
RMS forward current
10
A
IF(AV)
Average forward current
Tc = 135° C
Per diode
7.5
δ = 0.5
Per device
15
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Peak repetitive reverse current
tp = 2 µs square F= 1 kHz
1
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
6600
W
-65 to + 175
°C
Storage temperature range
Tstg
Maximum operating junction temperature
Tj
dV/dt
1.
Parameter
dPtot
--------------dTj
(1)
Critical rate of rise of reverse voltage
175
°C
10000
V/µs
1
- condition to avoid thermal runaway for a diode on its own heatsink
< ------------------------Rth ( j – a )
June 2006
Rev 4
1/8
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8
Characteristics
1
STPS15H100C
Characteristics
Table 2.
Thermal resistance
Symbol
Parameter
Value
Per diode
Rth(j-c)
Junction to case
Rth(c)
Coupling
Unit
4
Total
2.4
°C/W
0.7
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 3.
Symbol
IR(1)
VF(1.)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Test Conditions
Tj = 25° C
Tj = 125° C
Forward voltage drop
VR = VRRM
Tj = 25° C
IF = 7.5 A
Tj = 125° C
IF = 7.5 A
Tj = 25° C
IF = 12 A
Tj = 125° C
IF = 12 A
Tj = 25° C
IF = 15 A
Tj = 125° C
IF = 15 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.58 x IF(AV) + 0.012 IF2(RMS)
2/8
Min.
Typ.
1.3
Max.
Unit
3
µA
4
mA
0.8
0.62
0.67
0.85
V
0.68
0.73
0.89
0.71
0.76
STPS15H100C
Figure 1.
Characteristics
Conduction losses versus average Figure 2.
current
PF(av)(W)
Average forward current versus
ambient temperature (δ = 0.5)
IF(av)(A)
7
9
δ = 0.5
6
8
Rth(j-a)=Rth(j-c)
7
δ = 0.2
5
4
6
δ=1
δ = 0.1
5
δ = 0.05
4
3
Rth(j-a)=70°C/W
3
2
T
1
IF(av)(A)
δ=tp/T
0
0
1
2
Figure 3.
3
4
T
2
1
5
6
7
δ=tp/T
tp
0
8
0
9
Normalized avalanche power
derating versus pulse duration
25
Figure 4.
PARM(tp)
PARM(1µs)
1
1.2
Tamb(°C)
tp
50
75
100
125
150
175
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
Figure 5.
1
0
10
100
1000
Non repetitive surge peak forward
current versus overload duration
(maximum values)
0
Figure 6.
IM(A)
50
75
100
125
150
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
100
1.0
90
0.9
80
0.8
70
0.7
60
Tc=25°C
50
Tc=75°C
40
Tc=125°C
30
20
25
0
1.E-03
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
T
0.2
IM
10
0.6
0.1
t(s)
t
δ=0.5
1.E-02
1.E-01
1.E+00
Single pulse
0.0
1.E-03
tp(s)
1.E-02
δ=tp/T
1.E-01
tp
1.E+00
3/8
Characteristics
Figure 7.
STPS15H100C
Reverse leakage current versus
reverse voltage applied (typical
values)
Figure 8.
IR(mA)
Junction capacitance versus
reverse voltage applied (typical
values)
C(nF)
1.0
1.E+01
Tj=150°C
1.E+00
F=1MHz
Vosc=30mV
Tj=25°C
Tj=125°C
Tj=100°C
1.E-01
0.1
Tj=75°C
1.E-02
Tj=50°C
1.E-03
Tj=25°C
VR(V)
VR(V)
0.0
1.E-04
0
10
Figure 9.
20
30
40
50
60
70
80
90
1
100
Forward voltage drop versus
forward current
10
100
Figure 10. Thermal resistance junction to
ambient versus copper surface
under tab (epoxy printed board
FR4, Cu: 35µm)
IFM(A)
Rth(j-a)(°C/W)
100
100
90
Tj=125°C
(Maximum values)
80
70
60
Tj=125°C
(Typical values)
10
50
Tj=25°C
(Maximum values)
40
30
20
0
0.0
4/8
S(cm²)
10
VFM(V)
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
12
14
16
18
20
STPS15H100C
2
Package Information
Package Information
Epoxy meets UL94,V0
Table 4.
DPAK Package mechanical data
Dimensions
Ref
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0°
8°
0°
8°
Figure 11. DPAK Footprint (dimensions in mm)
6.7
6.7
3
3
1.6
1.6
2.3
2.3
5/8
Package Information
STPS15H100C
Table 5.
IPAK Package mechanical data
Dimensions
Ref.
Millimeters
Min.
A
E
Typ.
Max.
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.027
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
0.95
B5
D
B3
L1
Min.
A
B3
L2
L
Max.
C2
B2
H
Typ.
Inches
B
A1
0.037
0.30
0.035
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.019
0.023
D
6
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
V1
e
B5
e
G
6/8
C
A3
G
2.28
4.40
H
0.090
4.60
0.173
16.10
0.181
0.634
L
9
9.40
0.354
0.370
L1
0.8
1.20
0.031
0.047
L2
0.80
V1
10°
1
0.031 0.039
10°
STPS15H100C
3
4
Ordering Information
Ordering Information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS15H100CB
S15H100
DPAK
0.30 g
75
Tube
STPS15H100CB-TR
S15H100
DPAK
0.30 g
2500
Tape andreel
STPS15H100CH
S15H100CH
IPAK
0.35 g
75
Tube
Revision History
Date
Revision
Changes
Mar-2004
3
Last issue
08-Jun-2006
4
Reformatted to current standard. Added IPAK.
7/8
STPS15H100C
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