TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability ● High Switching Speed Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC5802DCH C5G TSC5802DCP ROG TO-251 TO-252 75pcs / Tube 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TA = 25oC, unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 1050 V Collector-Emitter Voltage @ VBE=0V VCES 450 V Emitter-Base Voltage VEBO 15 V Collector Current IC 2 A Collector Peak Current (tp <5ms) ICM 4 A Base Current IB 1.5 A Base Peak Current (tp <5ms) IBM 3 A PDTOT 30 Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature +150 TSTG -55 to +150 o Symbol Limit TJ Storage Temperature Range W o C C Note: Single Pulse. PW = 300uS, Duty ≤2% Thermal Performance Parameter Thermal Resistance – Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA 1/5 Unit 4.17 o 100 o C/W C/W Version: A13 TSC5802D High Voltage Fast-Switching NPN Power Transistor Electrical Specifications (TA = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =0.5mA BVCBO 1050 -- -- V Collector-Emitter Breakdown Voltage IC =5mA BVCEO 450 -- -- V Emitter-Base Breakdown Voltage IE =1mA BVEBO 15 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- 10 250 uA Collector Cutoff Current VCB =950V, IE =0 ICBO -- -- 10 uA Collector-Emitter Saturation Voltage IC=0.7A, IB =0.14A VCE(SAT)1 --- -- 0.5 V Collector-Emitter Saturation Voltage IC=2A, IB =0.6A VCE(SAT)2 --- 1.5 3.0 V Base-Emitter Saturation Voltage IC=2A, IB =0.6A VBE(SAT)1 -- 1.0 1.6 V VCE =5V, IC =100mA hFE1 50 70 100 VCE =3V, IC =500mA hFE2 18 23 50 VF -- -- 1.5 V tr -- -- 1 uS tSTG 2.5 3 3.5 uS tf -- -- 1.2 uS DC Current Gain Diode Forward Voltage IC=1A Resistive Load Switching Time (Ratings) Rise Time Storage Time VCC =5V, IC =0.5A, Fall Time Notes: Pulsed duration =380uS, duty cycle ≤2% 2/5 Version: A13 TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 3/5 Version: A13 TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: A13 TSC5802D High Voltage Fast-Switching NPN Power Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A13