TSC TSC5802DCPROG

TSC5802D
High Voltage Fast-Switching
NPN Power Transistor
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCEO
450V
BVCBO
1050V
IC
VCE(SAT)
Features
2A
0.5V @ IC=0.7A, IB=0.14A
Block Diagram
●
High Voltage Capability
●
High Switching Speed
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSC5802DCH C5G
TSC5802DCP ROG
TO-251
TO-252
75pcs / Tube
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (TA = 25oC, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
1050
V
Collector-Emitter Voltage @ VBE=0V
VCES
450
V
Emitter-Base Voltage
VEBO
15
V
Collector Current
IC
2
A
Collector Peak Current (tp <5ms)
ICM
4
A
Base Current
IB
1.5
A
Base Peak Current (tp <5ms)
IBM
3
A
PDTOT
30
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
+150
TSTG
-55 to +150
o
Symbol
Limit
TJ
Storage Temperature Range
W
o
C
C
Note: Single Pulse. PW = 300uS, Duty ≤2%
Thermal Performance
Parameter
Thermal Resistance – Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
1/5
Unit
4.17
o
100
o
C/W
C/W
Version: A13
TSC5802D
High Voltage Fast-Switching
NPN Power Transistor
Electrical Specifications (TA = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =0.5mA
BVCBO
1050
--
--
V
Collector-Emitter Breakdown Voltage
IC =5mA
BVCEO
450
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA
BVEBO
15
--
--
V
Collector Cutoff Current
VCE =400V, IB=0
ICEO
--
10
250
uA
Collector Cutoff Current
VCB =950V, IE =0
ICBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC=0.7A, IB =0.14A
VCE(SAT)1
---
--
0.5
V
Collector-Emitter Saturation Voltage
IC=2A, IB =0.6A
VCE(SAT)2
---
1.5
3.0
V
Base-Emitter Saturation Voltage
IC=2A, IB =0.6A
VBE(SAT)1
--
1.0
1.6
V
VCE =5V, IC =100mA
hFE1
50
70
100
VCE =3V, IC =500mA
hFE2
18
23
50
VF
--
--
1.5
V
tr
--
--
1
uS
tSTG
2.5
3
3.5
uS
tf
--
--
1.2
uS
DC Current Gain
Diode Forward Voltage
IC=1A
Resistive Load Switching Time (Ratings)
Rise Time
Storage Time
VCC =5V, IC =0.5A,
Fall Time
Notes: Pulsed duration =380uS, duty cycle ≤2%
2/5
Version: A13
TSC5802D
High Voltage Fast-Switching
NPN Power Transistor
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
3/5
Version: A13
TSC5802D
High Voltage Fast-Switching
NPN Power Transistor
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A13
TSC5802D
High Voltage Fast-Switching
NPN Power Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A13