UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3413L-AE2-R UT3413G-AE2-R UT3413L-AE3-R UT3413G-AE3-R Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 S G D S G D Packing Tape Reel Tape Reel MARKING 34P L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-159.E UT3413 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 3) ID -3 A Pulsed Drain Current (Note 1, 2) IDM -15 A Power Dissipation PD 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL θJA MIN TYP 70 MAX 90 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance(Note 2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0V, ID =-250µA VDS =-16V, VGS =0 V VDS =0V, VGS = ±8 V -20 VGS(TH) VDS =VGS, ID =-250 µA VGS =-4.5 V, ID =-3 A VGS =-2.5 V, ID =-2.6 A VGS =-1.8 V, ID =-1A -0.3 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =-10 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VGS=-4.5V,VDS=-10V, RL=3.3Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=-10V, VGS =-4.5V, ID=-3A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward VSD IS=-1A, VGS=0V Voltage(Note2) Maximum Continuous Drain-Source Diode IS Forward Current Reverse Recovery Time tRR IF=-3 A, dI/dt=100A/μs Reverse Recovery Charge QRR Note: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300μs, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -0.55 81 108 146 MAX UNIT -1 ±100 V µA nA -1 97 130 190 V mΩ mΩ mΩ 540 72 49 pF pF pF 10 12 44 22 6.1 0.6 1.6 ns ns ns ns nC nC nC -0.78 21 7.5 -1 V -2 A ns nC 2 of 5 QW-R502-159.E UT3413 Power MOSFET TYPICAL CHARACTERISTICS On-Region Characteristics 15 Drain Current,-ID (A) -8V Transfer Characteristics 6 VDS=-5V -4.5V -3.0V -2.5V Drain Current,-ID (A) 10 -2.0V 5 VGS=-1.5V 4 2 125℃ 25℃ 0 0 5 0 0.5 1 1.5 Gate to Source Voltage,-VGS (V) 2 Normalized On-Resistance 1 2 3 4 Drain to Source Voltage,-VDS (V) Drain to Source OnResistance,RDS(ON) (mΩ) Reverse Drain Current,-IS (A) Drain to Source OnResistance,RDS(ON) (mΩ) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-159.E UT3413 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Power (W) Drain Current,-ID (A) Capacitance (pF) Gate to Source Voltage,-VGS (V) Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,ZθJA 10 D=TON/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90℃/W In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse 1 PDM 0.1 TON T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-159.E UT3413 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-159.E