UNISONIC TECHNOLOGIES CO., LTD UT3P06 Preliminary Power MOSFET 3A, 60V (D-S) P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT3P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This UTC UT3P06 can be operated with -4.5V low gate voltage. FEATURES * RDS(ON)=0.19Ω @ VGS=-10V, RDS(ON)=0.265Ω @ VGS=-4.5V * Low gate charge (Typically 7nC) SYMBOL (4)Source (3)Gate (1)(2)(5)(6) Drain ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3P06L-AG6-R UT3P06G-AG6-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-26 Pin Assignment 1, 2, 5, 6 3 4 D G S Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-673.b UT3P06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS -60 V VGSS ±20 V -3 A Continuous ID Drain Current Pulsed IDM -10 A Avalanche Current (L=0.1mH) IAR -7 A Power Dissipation (Note 1, 2) PD 3.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on FR4 Board. 3. t≤5 sec THERMAL DATA PARAMETER Junction to Ambient (Note 1,2) Junction to Case SYMBOL θJA θJC RATINGS 62.5 35 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL TEST CONDITIONS MIN BVDSS ID=-250µA, VDS=0V VDS=-48V, VGS=0V VDS=-48V, VGS=0V , TJ=150°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V -60 IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-3A Static Drain-Source On-State Resistance RDS(ON) (Note 1) VGS=-4.5V, ID=-1.9A On State Drain Current (Note 1) ID(ON) VGS=-10V, VDS=-5V SWITCHING PARAMETERS (Note 2) Total Gate Charge QG VGS=-10V, VDS=-30V, ID=-3A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-30V, VGEN=-10V, ID=-1A, RL=30 Ω , RG=6Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 2) Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=-3A, VGS=0V (Note 1) Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT V -1 -50 +100 -100 -1 µA nA nA V 190 265 220 310 -10 mΩ A 7 1.6 1.2 8 12 23 12 -0.8 14 16 24 45 25 nC nC nC ns ns ns ns -1.7 -10 -1.2 A A V 2 of 3 QW-R502-673.b UT3P06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-673.b