UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100P03 Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage and high speed switching applications FEATURES * RDS(ON)=3.3mΩ @ VGS=-10V, ID=-80A * High Switching Speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT100P03L-TA3-T UTT100P03G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-697.a UTT100P03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS -16/+5 V -100 A Continuous TC=25°C, VGS=-10V ID (Note 2) Drain Current TC=100°C, VGS=-10V -100 (Note 3) A Pulsed (Note 3) TC=25°C IDM -400 A Single Pulsed Avalanche Energy ID=-80A EAS 450 mJ Power Dissipation TC=25°C PD 200 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current is limited by bondwire; with a θJC = 0.65 °C/W the chip is able to carry ID=-195A at 25°C. 3. Defined by design. Not subject to production test. THERMAL DATA (Note 2) PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 0.65 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS ID=-250µA, VGS=0V VDS=-30V, VGS=0V, TJ=25°C VDS=-30V,VGS=0V,TC=125°C (Note 1) VGS=+16V, VDS=0V VGS=-16V, VDS=0V -30 VDS=VGS, ID=-475µA VGS=-4.5V, ID=-50A VGS=-10, ID=-80A -1 IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) MIN TYP MAX UNIT -0.1 -1 -10 -100 +10 +100 -10 -100 V µA µA nA nA -1.5 4.8 3.3 V mΩ mΩ -2.1 7.6 4.3 DYNAMIC PARAMETERS (Note 1) Input Capacitance CISS 7150 9300 pF VGS=0V, VDS=-25V, f=1.0MHz Output Capacitance COSS 2150 2800 pF Reverse Transfer Capacitance CRSS 1650 2500 pF SWITCHING PARAMETERS (Note 1) Total Gate Charge QG 150 200 nC VDD=-24V, VGS=0~-10V, ID=-80A Gate to Source Charge QGS 25 33 nC Gate to Drain Charge QGD 55 82.5 nC Turn-ON Delay Time tD(ON) 30 ns Rise Time tR 45 ns VDD=-15V, VGS=-10V, ID=-50A, RG=6Ω Turn-OFF Delay Time tD(OFF) 200 ns Fall-Time tF 180 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TA = 25°C (Note 1) -100 A Maximum Body-Diode Pulsed Current ISM TA = 25°C (Note 1) -400 A Drain-Source Diode Forward Voltage VSD IS=-80A, VGS=0V -0.6 -1 -1.2 V Body Diode Reverse Recovery Time trr 50 ns VR=-15V, IF=-50A, dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR 55 nC Notes: 1. Defined by design. Not subject to production test. 2. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-697.a UTT100P03 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-697.a