CMLDM5757 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM5757 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: 77C SOT-563 CASE APPLICATIONS: • Load switch/Level shifting • Battery charging • Boost switch • Electro-luminescent backlighting MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current (tp=10μs) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) FEATURES: • ESD protection up to 1800V (Human Body Model) • 350mW power dissipation • Very low rDS(ON) • Low threshold voltage • Logic level compatible • Small, SOT-563 surface mount package • Complementary dual N-Channel device: CMLDM3737 SYMBOL VDS VGS 20 UNITS V 8.0 V ID IDM PD 430 mA 750 mA 350 mW PD PD 300 mW 150 mW TJ, Tstg ΘJA -65 to +150 °C 357 °C/W MAX 2.0 UNITS μA 1.0 μA 1.0 V ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=4.5V, VDS=0 IDSS VDS=16V, VGS=0 BVDSS VGS=0, ID=250μA VGS(th) VDS=VGS, ID=250μA VGS=0, IS=350mA VSD 20 0.45 V 1.2 V VGS=4.5V, ID=430mA VGS=2.5V, ID=300mA VGS=1.8V, ID=150mA 0.9 Ω 1.2 Ω 2.0 Ω 20 pF Ciss VDS=16V, VGS=0, f=1.0MHz VDS=16V, VGS=0, f=1.0MHz 175 pF Coss VDS=16V, VGS=0, f=1.0MHz 30 pF rDS(ON) rDS(ON) rDS(ON) Crss Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R2 (5-June 2013) CMLDM5757 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) SYMBOL TEST CONDITIONS TYP MAX Qg(tot) VDS=10V, VGS=4.5V, ID=200mA 1.2 Qgs Qgd ton toff VDS=10V, VGS=4.5V, VDS=10V, VGS=4.5V, UNITS nC ID=200mA 0.24 nC ID=200mA 0.36 nC 38 ns 48 ns VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 77C R2 (5-June 2013) w w w. c e n t r a l s e m i . c o m CMLDM5757 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R2 (5-June 2013) w w w. c e n t r a l s e m i . c o m