CZDM1003N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZDM1003N is a 3.0 Amp, 100 Volt silicon N-Channel enhancementmode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge. MARKING: FULL PART NUMBER SOT-223 CASE APPLICATIONS: • Motor control • Relay driver • DC-DC converters FEATURES: • Low rDS(ON) • High current • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS VGS 100 UNITS V 20 V Continuous Drain Current (Steady State) ID 3.0 A Maximum Pulsed Drain Current, tp=10μs IDM PD 12 A Gate-Source Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA 2.0 W -55 to +150 °C 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=100V, VGS=0 BVDSS VGS(th) VSD rDS(ON) Crss Ciss Coss Qg(tot) Qgs VGS=0, ID=250μA VGS=VDS, ID=250μA MAX 100 UNITS nA 1.0 μA 4.0 V 100 V 2.0 VGS=0, IS=3.0A VGS=10V, ID=2.0A 70 VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz 55 80 VDS=25V, VGS=0, f=1.0MHz VDS=80V, VGS=10V, ID=9.2A VDS=80V, VGS=10V, ID=9.2A 1.3 V 150 mΩ 55 70 pF 705 975 pF pF 15 nC 3.0 nC 5.5 nC ton VDS=80V, VGS=10V, ID=9.2A VDD=50V, VGS=10V, ID=9.2A 40 80 ns toff RG=18Ω 60 155 ns Qgd R1 (21-January 2013) CZDM1003N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-223 CASE - MECHANICAL OUTLINE 4 1 2 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source 4) Drain MARKING: FULL PART NUMBER R1 (21-January 2013) w w w. c e n t r a l s e m i . c o m CZDM1003N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R1 (21-January 2013) w w w. c e n t r a l s e m i . c o m