CTLDM304P-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C430 TLM832DS CASE APPLICATIONS: • Switching circuits • DC-DC converters • Power management MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Low rDS(ON) • High drain current • Low gate charge SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA UNITS V V A A W °C °C/W 30 12 4.2 30 1.65 -55 to +150 76 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=12V, VDS=0 100 IDSS VDS=24V, VGS=0 1.0 BVDSS VGS=0, ID=250μA 30 VGS(th) VGS=VDS, ID=250μA 0.7 1.0 1.3 rDS(ON) VGS=10V, ID=4.2A 60 70 rDS(ON) VGS=4.5V, ID=4.0A 64 75 rDS(ON) VGS=2.5V, ID=1.0A 86 120 Qg(tot) VDS=15V, VGS=4.5V, ID=4.0A 6.4 Qgs VDS=15V, VGS=4.5V, ID=4.0A 1.8 Qgd VDS=15V, VGS=4.5V, ID=4.0A 1.4 Crss VDS=15V, VGS=0, f=1.0MHz 53 Ciss VDS=15V, VGS=0, f=1.0MHz 760 Coss VDS=15V, VGS=0, f=1.0MHz 50 ton VDD=15V, VGS=10V, ID=1.0A RL=3.6Ω, RG=6.0Ω 40 toff VDD=15V, VGS=10V, ID=1.0A RL=3.6Ω, RG=6.0Ω 75 UNITS nA μA V V mΩ mΩ mΩ nC nC nC pF pF pF ns ns R1 (9-October 2012) CTLDM304P-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM832DS CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate Q1 2) Source Q1 3) Gate Q2 4) Source Q2 5) 6) 7) 8) Drain Drain Drain Drain Q2 Q2 Q1 Q1 MARKING CODE: C430 R1 (9-October 2012) w w w. c e n t r a l s e m i . c o m