FUJITSU CS401

FUJITSU SEMICONDUCTOR
DATA SHEET
DS601-00001-2v0-E
Semicustom
CMOS
Standard Cell
CS401 Series
■ DESCRIPTION
The CS401 series of 28 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power
consumption, higher speed and higher integration.
These cells offer the minimum level of leakage current in the semiconductor industry, and are able to implement a mixture of core transistors with four different threshold voltages, as appropriate for the applications
ranging from handheld terminals to digital audiovisual equipment.
The integration level in this series is twice the CS302 series with lower power consumption and higher speed.
■ FEATURES
• Technology
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: 28 nm Metal-gate CMOS
: Maximum 11-metal layers. Ultra low permittivity material is used for dielectric
inter-layers.
: Four different types of core transistors (low leak, standard, high speed and ultra high
speed) can be used on the same chip.
Supply voltage : Internal power supply : + 1.0 V ± 0.1 V
: External power supply : + 1.8 V ± 0.15 V
(1.8V interface on dual-power supply system)
+ 2.5 V ± 0.2 V
(2.5V interface on dual-power supply system)
+ 3.3 V ± 0.3 V
(3.3V interface on dual-power supply system)
Junction temperature range: − 40 °C to + 125 °C (standard specification)
Gate power consumption: 0.61 nW / gate (operating condition: 1.0 V, operating rate 0.5, 1 MHz)
Support high-quality, various types of cell sets developed by FUJITSU SEMICONDUCTOR (from low power
versions to high speed versions).
Support SRAMs with standby-mode and power-down mode for lower power consumption memories.
Compiled cells (RAM, ROM, others)
Support special interfaces (LVDS, SSTL, others).
Support boundary SCAN test.
Support use of industry standard libraries.
Support use of industry standard tools.
Short-term development using a physical prototyping tool
One pass design using a physical synthesis tool
Hierarchical design environment for supporting large-scale circuits
Support Signal Integrity, EMI noise reduction.
(Continued)
Copyright©2012 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2012.10
CS401 Series
(Continued)
• Support static timing sign-off.
• Improve timing convergence by using Statistical Static Timing Analysis (SSTA).
• Design For Manufacturing (DFM) enables stable product-supply and reduced variation.
• Package lineup: FBGA, PBGA, TEBGA, FC-BGA
Note: Including items under development.
■ MACRO LIBRARIES (INCLUDING MACROS CURRENTLY BEING PREPARED)
1. Logic cells (about 400 types)
Library sets having four different threshold voltages of core transistors.
• Adder
• AND
• AND-OR
• AND-OR Inverter
• Buffer
• Clock-Buffer
• Delay Buffer
• ENOR
• EOR
• Inverter
• Latch
• NAND
• NOR
• OR
• OR-AND
• OR-AND Inverter
• SCAN Flip flop
• Non-SCAN Flip flop
• Selector
• Others
2. IP macros
CPU/DSP
ARMTM* cores (ARM7TDMI-STM*, ARM946E-STM*, ARM926EJ-STM*,
ARM1176JZF-STM*, Cortex-M3TM*, Cortex-R4FTM*, Cortex-A9TM* MPCore),
Peripherals IP
Mixed signal macro
ADC, DAC, OPAMP, others
Compiled macro
SRAM (1 Port, 2 Port), ROM, product sum calculator, others
PLL
Analog PLL
*: ARM, ARM7TDMI-S, ARM946E-S, ARM926EJ-S, ARM1176JZF-S, Cortex-M3, Coretex-R4F and
Cortex-A9 are the trademarks of ARM Limited in the EU and other countries.
3. Special I/O interface macro
Special I/O
LVDS, SSTL18, PCI, I2C
Interface macro
USB2.0 Device/host, Serial-ATA, PCI-Express, DDR2, HDMI, others
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DS601-00001-2v0-E
CS401 Series
■ COMPILED CELL
Compiled cells are macro cells that can be automatically generated by specifying the bit/word configuration.
The following compiled cells are available for the CS401 series.
• Memory capacity
Name
Category
Memory capacity (bit)
High-Density
64 to 1152 K
High-Speed
32 to 80 K
Large-Scale
16 K to 9 M
High-Density
32 to 144 K
Clock synchronous ROM
⎯
128 to 1152 K
Clock synchronous register file (1RW)
⎯
80 to 36 K
Clock synchronous register file (1R1W)
⎯
32 to 72 K
Clock synchronous register file (2R2W)
⎯
16 to 18 K
Clock synchronous single-port RAM (1RW)
Clock synchronous dual port RAM (2RW)
DS601-00001-2v0-E
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CS401 Series
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Remarks
Min
Max
− 0.4
+ 1.4
− 0.5
+ 2.5
− 0.5
+ 3.6
− 0.5
+ 4.6
*5
− 0.5
VDD + 0.5 ( ≤ 2.5 V)
*3
− 0.5
VDD + 0.5 ( ≤ 3.6 V)
− 0.5
VDD + 0.5 ( ≤ 4.6 V)
*5
− 0.5
VDD + 0.5 ( ≤ 2.5 V)
*3
− 0.5
VDD + 0.5 ( ≤ 3.6 V)
− 0.5
VDD + 0.5 ( ≤ 4.6 V)
TSTG
− 55
+ 125
°C
Operation junction temperature
Tj
− 40
+ 125
°C
Output current*6
IO
⎯
⎯
mA
ID
⎯
⎯
mA
Power supply voltage*1
VDD
1
VI
Input voltage*
Output voltage*1
VO
Storage temperature
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Power supply pin current*
*2
V
V
V
*3
*4
*4
*4
*5
*1: VSS = 0 V
*2: Internal gates
*3: 1.8 V interface on dual-power supply system
*4: 2.5 V interface on dual-power supply system
*5: 3.3 V interface on dual-power supply system
*6: The output current varies depending on the number of wiring layers in the chip and the wiring configuration
of the I/O cells. Contact the sales representative for details.
*7: For details about the power supply pin current, contact the sales representative.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
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DS601-00001-2v0-E
CS401 Series
■ DESIGN METHODS
Fujitsu Semiconductor's Reference Design Flow provides the following functions that help reduce the
development time of large scale, high quality LSIs.
• Statistical Static Timing Analysis (SSTA) improves timing convergence.
• Physical Prototyping enables more accurate estimation of highly reliable designs.
• Layout synthesis with optimized timing is realized by Physical Synthesis Tool.
• High accuracy design environment where drop in power supply voltage, signal noise, delay penalty and
crosstalk are considered
• I/O design environment (power line design, assignment and selection of I/Os, package selection) where
noise is considered
■ PACKAGES
The CS401 series can use the same packages that were available for the previous series, allowing a smooth
transition from previously developed models. For details of delivery times, contact the sales representative.
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FBGA packages
PBGA packages
TEBGA packages
FC-BGA packages
DS601-00001-2v0-E
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CS401 Series
MEMO
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DS601-00001-2v0-E
CS401 Series
MEMO
DS601-00001-2v0-E
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CS401 Series
FUJITSU SEMICONDUCTOR LIMITED
Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,
Kohoku-ku Yokohama Kanagawa 222-0033, Japan
Tel: +81-45-415-5858
http://jp.fujitsu.com/fsl/en/
For further information please contact:
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#05-08 New Tech Park 556741 Singapore
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http://sg.fujitsu.com/semiconductor/
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Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/semiconductor/
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Shanghai 201204, China
Tel : +86-21-6146-3688 Fax : +86-21-6146-3660
http://cn.fujitsu.com/fss/
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Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fsk/
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Shatin, N.T., Hong Kong
Tel : +852-2736-3232 Fax : +852-2314-4207
http://cn.fujitsu.com/fsp/
Specifications are subject to change without notice. For further information please contact each office.
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The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does
not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
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Edited: Sales Promotion Department