FUJITSU SEMICONDUCTOR DATA SHEET DS601-00002-0v01-E Semicustom CMOS Standard Cell CS402 Series ■ DESCRIPTION The CS402 series of 28 nm standard cells is a line of CMOS ASICs of high-performance with minimum power consumption. By the adoption of core transistors with high current drivability operating at low voltages, the operating frequency approximately twice that of CS401 series is realized at power supply voltages 10% lower than those of CS401 series. This series is appropriate for high-performance/high-end applications ranging from the engines of handheld terminals to telecommunication equipment. ■ FEATURES • Technology • • • • • • • • • • • • • • • • • • : 28 nm Metal-gate CMOS : Maximum 11-metal layers. Ultra low permittivity material is used for inter-layer dielectric. : Core transistors with different threshold voltages can be used on the same chip (ultra low leak, low leak, standard, high speed and ultra high speed). Supply voltage : Internal power supply : + 0.9 V ± 0.09 V : External power supply : + 1.8 V ± 0.15 V (1.8V interface on dual-power supply system) Junction temperature range: − 40 °C to + 125 °C (Standard specification) Operating frequency: Approximately twice that of CS401 series Support various types of high-quality cell sets developed by FUJITSU SEMICONDUCTOR (from low power versions to high speed versions). Support SRAMs with standby-mode and power-down mode for lower power consumption memories. Compiled cells (RAM, ROM, others) Support special interfaces (LVDS, SSTL, others). Support boundary SCAN test. Support use of industry standard libraries. Support use of industry standard tools. Short-term development using a physical prototyping tool One-pass design using a physical synthesis tool Hierarchical design environment for supporting large-scale circuits Support Signal Integrity, EMI noise reduction. Support static timing sign-off. Improve timing convergence by the introduction of Statistical Static Timing Analysis (SSTA). Design For Manufacturing (DFM) enables stable product-supply and reduced variation. Package lineup: FBGA, PBGA, TEBGA, FC-BGA Note: Including items under development. Copyright©2012 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2012.6 CS402 Series ■ MACRO LIBRARIES (MACROS CURRENTLY BEING PREPARED ARE INCLUDED) 1. Logic cells (about 400 types) Library sets for four types of core transistors with different threshold voltages. • Adder • AND • AND-OR • AND-OR Inverter • Buffer • Clock-Buffer • Delay Buffer • ENOR • EOR • Inverter • Latch • NAND • NOR • OR • OR-AND • OR-AND Inverter • SCAN Flip flop • Non-SCAN Flip flop • Selector • Others 2. IP macros CPU/DSP ARMTM* cores (ARM7TDMI-STM*, ARM946E-STM*, ARM926EJ-STM*, ARM1176JZF-STM*, Cortex-M3TM*, Cortex-R4FTM*, Cortex-A9TM* MPCore), Peripherals IP Mixed signal macro ADC, DAC,OPAMP, others Compiled macro SRAM (1 Port, 2 Port), ROM, product sum calculator, others PLL Analog PLL *: ARM, ARM7TDMI-S, ARM946E-S, ARM926EJ-S, ARM1176JZF-S, Cortex-M3, Cortex-R4F and Cortex-A9 are the trademarks of ARM Limited in the EU and other countries. 3. Special I/O interface macros Special I/O 2 LVCMOS, LVDS, SSTL DS601-00002-0v01-E CS402 Series ■ COMPILED CELLS Compiled cells are macro cells that can be automatically generated by specifying the bit/word configuration. The following compiled cells are available for the CS402 series. • Memory capacity Name Clock synchronous single-port RAM (1RW) Clock synchronous dual port RAM (2RW) Clock synchronous ROM Clock synchronous register file (1RW) Clock synchronous register file (1R1W) Clock synchronous register file (2R2W) DS601-00002-0v01-E Category Memory capacity (bit) High-Density 64 to 1152K High-Speed 32 to 80K Large-Scale TBD High-Density 32 to 144K ⎯ 128 to 1152K High-Speed 96 to 36K High-Density 96 to 36K High-Speed 32 to 36K High-Density 128 to 72K ⎯ 16 to 18K 3 CS402 Series ■ ABSOLUTE MAXIMUM RATINGS Parameter Power supply voltage*1 Symbol VDD Rating Min Max − 0.4 + 1.3 − 0.5 + 2.5 Unit V Remarks *2 *3 Input voltage* VI − 0.5 VDD + 0.5 ( ≤ 2.5 V ) V *3 Output voltage*1 VO − 0.5 VDD + 0.5 ( ≤ 2.5 V ) V *3 Storage temperature TSTG − 55 + 125 °C Junction temperature Tj − 40 + 125 °C IO ⎯ ⎯ mA ID ⎯ ⎯ mA 1 Output current* 4 Power supply pin current*5 *1: VSS = 0 V *2: Internal gates *3: 1.8 V interface on dual-power supply system *4: The output current varies depending on the number of chip metal layers and the wiring configuration of the I/O cells. For details, contact the sales representative. *5: For details about the power supply pin current, contact the sales representative. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. 4 DS601-00002-0v01-E CS402 Series ■ DESIGN METHODS Fujitsu Semiconductor's Reference Design Flow provides the following functions that help reduce the development time of large scale, high quality LSIs. • Statistical Static Timing Analysis (SSTA) improves timing convergence. • Physical Prototyping enables more accurate estimation of highly reliable designs. • Layout synthesis with optimized timing is realized by Physical Synthesis Tool. • High accuracy design environment where voltage drop of power supply, signal noise, delay penalty and crosstalk are considered • I/O design environment (power line design, assignment and selection of I/Os, package selection) where noise is considered ■ PACKAGES The CS402 series can use the same packages that are available for the previous series, allowing a smooth transition from previously developed models. For details of delivery times, contact the sales representative. • • • • FBGA packages PBGA packages TEBGA packages FC-BGA packages DS601-00002-0v01-E 5 CS402 Series MEMO 6 DS601-00002-0v01-E CS402 Series MEMO DS601-00002-0v01-E 7 CS402 Series FUJITSU SEMICONDUCTOR LIMITED Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America FUJITSU SEMICONDUCTOR AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://us.fujitsu.com/micro/ Asia Pacific FUJITSU SEMICONDUCTOR ASIA PTE. LTD. 151 Lorong Chuan, #05-08 New Tech Park 556741 Singapore Tel : +65-6281-0770 Fax : +65-6281-0220 http://sg.fujitsu.com/semiconductor/ Europe FUJITSU SEMICONDUCTOR EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/semiconductor/ FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD. 30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District, Shanghai 201204, China Tel : +86-21-6146-3688 Fax : +86-21-6146-3660 http://cn.fujitsu.com/fss/ Korea FUJITSU SEMICONDUCTOR KOREA LTD. 902 Kosmo Tower Building, 1002 Daechi-Dong, Gangnam-Gu, Seoul 135-280, Republic of Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://kr.fujitsu.com/fsk/ FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel : +852-2377-0226 Fax : +852-2376-3269 http://cn.fujitsu.com/fsp/ Specifications are subject to change without notice. For further information please contact each office. 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