< HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM750HG-130R z z z z z z IC····························································· 750A VCES··················································· 6500V 1-element in a Pack High insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM June 2011 (HVM-1058-B) Dimensions in mm 1 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item VCES Collector-emitter voltage VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg tpsc Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Short circuit pulse width Conditions VGE = 0V, Tj = +125 °C VGE = 0V, Tj = +25°C VGE = 0V, Tj = −50°C VCE = 0V, Tj = 25°C DC, Tc = 95°C Pulse DC Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 6500 6300 5700 ±20 750 1500 750 1500 10400 10200 5100 −50 ~ +150 −50 ~ +125 −55 ~ +125 10 (Note 1) (Note 1) VCC = 4500 V, VCE ≤ VCES, VGE = 15V, Tj = 125°C Unit V V A A A A W V V °C °C °C μs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10V, IC = 75mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCEsat Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) VCE = 10V, VGE = 0V, f = 100kHz Tj = 25°C VCC = 3600V, IC = 750A, VGE = ±15V (Note 4) IC = 750A VGE = 15V VCC = 3600V IC = 750A VGE = ±15V RG(on) = 3.9Ω Ls = 150nH Inductive load VCC = 3600V IC = 750A VGE = ±15V RG(off) = 33Ω Ls = 150nH Inductive load June 2011 2 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min — — 5.8 −0.5 — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 24.0 6.3 — 136.0 8.6 4.0 10.5 3.90 4.80 1.20 1.15 0.20 0.22 3.50 4.10 3.85 4.80 7.30 7.80 0.36 0.44 3.40 4.60 3.60 4.90 Max 24.0 — 6.8 0.5 — — — — — 5.60 — 1.80 — 0.50 — — — — — 9.00 — 1.00 — — — — Unit mA V μA nF nF nF μC V μs μs J J μs μs J J < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions Emitter-collector voltage VEC (Note 2) IE = 750A VGE = 0V (Note 4) Reverse recovery time trr (Note 2) Reverse recovery current Irr (Note 2) Reverse recovery charge Qrr (Note 2) Erec(10%) Reverse recovery energy (Note 2)(Note 5) VCC = 3600V IC = 750A VGE = ±15V RG(on) = 3.9Ω Ls = 150nH Inductive load Reverse recovery energy Erec (Note 2)(Note 6) Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min — — — — — — — — — — — — Limits Typ 3.00 3.20 0.55 0.75 900 1000 750 1100 1.05 1.85 1.40 2.10 Max — 3.80 — — — — — — — — — — Min — — — Limits Typ — — 6.0 Max 12.0 22.0 — Min 7.0 3.0 1.0 — 600 26.0 56.0 — — — Limits Typ — — — 1.4 — — — 15.0 0.18 2.6 Max 22.0 6.0 3.0 — — — — — — — Unit V μs A μC J J THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to heat sink, λgrease = 1W/m·k, D(c-s) = 100μm Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Note1. 2. 3. 4. 5. 6. Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistance Conditions M M M : Main terminals screw : Mounting screw : Auxiliary terminals screw Tc = 25°C Tc = 25°C Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. Definition of all items is according to IEC 60747, unless otherwise specified. June 2011 3 Unit N·m N·m N·m kg — mm mm nH mΩ Ω < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1500 1500 Tj = 125°C VCE = VGE VGE = 15V 1250 1250 VGE = 11V 1000 750 VGE = 10V 500 Collector Current [A] Collector Current [A] VGE = 13V 1000 750 500 Tj = 125°C 250 Tj = 25°C 250 0 0 0 2 4 6 8 0 Collector - Emitter Voltage [V] 4 8 12 16 Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 1500 1500 VGE = 15V 1250 1250 1000 Emitter Current [A] Collector Current [A] Tj = 25°C Tj = 25°C Tj = 125°C 750 500 250 1000 750 Tj = 125°C 500 250 0 0 0 2 4 6 8 0 Collector-Emitter Saturation Voltage [V] 1 2 3 4 Emitter-Collector Voltage [V] June 2011 4 5 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 1000 20 VCE = 3600V, IC = 750A Tj = 25°C 15 Gate-Emitter Voltage [V] Capacitance [nF] Cies 100 10 Coes Cres VGE = 0V, Tj = 25°C f = 100kHz 10 5 0 -5 -10 1 -15 0.1 1 10 100 0 2 Collector-Emitter Voltage [V] 6 8 10 12 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 12 14 VCC = 3600V, VGE = ±15V RG(on) = 3.9Ω, RG(off) = 33Ω LS = 150nH, Tj = 125°C Inductive load 12 VCC = 3600V, IC = 750A VGE = ±15V, LS = 150nH Tj = 125°C, Inductive load 10 Eon 10 Switching Energies [J] Switching Energies [J] 4 8 Eoff 6 4 2 8 6 Eon 4 Erec 2 Erec 0 0 0 250 500 750 1000 1250 0 1500 Collector Current [A] 2 4 6 Gate resistor [Ohm] June 2011 5 8 10 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 12 100 VCC = 3600V, VGE = ±15V RG(on) = 3.9Ω, RG(off) = 33Ω LS = 150nH, Tj = 125°C Inductive load VCC = 3600V, IC = 750A VGE = ±15V, LS = 150nH Tj = 125°C, Inductive load 10 Switching Times [µs] Switching Energies [J] 10 8 6 Eoff 4 td(off) 1 td(on) tf 0.1 tr 2 0 0 10 20 30 40 0.01 100 50 Gate resistor [Ohm] REVERSE BIAS SAFE OPERATING AREA (RBSOA) 2500 10000 trr 1000 1000 100 2000 Collector Current [A] Irr 1 0.1 100 VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) = 33Ω Reverse Recovery Current [A] Reverse Recovery Time [µs] VCC = 3600V, VGE = ±15V RG(on) = 3.9Ω, LS = 150nH Tj = 125°C, Inductive load 10 10000 Collector Current [A] FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 1000 1500 1000 500 10 10000 0 0 Emitter Current [A] 2000 4000 6000 Collector-Emitter Voltage [V] June 2011 6 8000 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 10 2500 VCC ≤ 4500V, di/dt < 4.5kA/µs Tj = 125°C VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(on) = 3.9Ω, RG(off) = 33Ω 2000 Reverse Recovery Current [A] Collector Current [kA] 8 6 4 2 1500 1000 500 0 0 0 2000 4000 6000 8000 0 Collector-Emitter Voltage [V] 2000 4000 6000 8000 Emitter-Collector Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 12.0K/kW Rth(j-c)D = 22.0K/kW 1 Z (t ) = th( j − c ) n ∑ R 1− exp i =1 0.8 0.6 0.1 1 τ ⎪⎭ 1 0.0055 2 0.2360 3 0.4680 4 0.2905 ti [sec] : 0.0001 0.0131 0.0878 0.6247 0.2 0.01 ⎛ t ⎞⎫ ⎜− ⎟ ⎜ ⎟⎪ i ⎠⎬ ⎝ Ri [K/kW] : 0.4 0 0.001 ⎧ ⎪ i⎨ ⎪⎩ 10 Time [s] June 2011 7 < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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