< IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 7 9 0 A* Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate ●RoHS Directive compliance ●UL Recognized under UL1557, File E323585 Dual (Half-Bridge) *. DC current rating is limited by power terminals. APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION 3 Tolerance 0.5 to ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 Di1 C2E1 Tr2 E2 Di2 Publication Date : August 2011 1 Tr1 C1 G1 E1 (ES1) Division of Dimension E2 G2 (ES2) Tolerance otherwise specified < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC Item Ptot IE IERM (Note.1) Emitter current 790 * (Note.3) Pulse, Repetitive Total power dissipation (Note.1) (Note.2, 4) DC, TC=117 °C Collector current ICRM Conditions TC=25 °C (Note.2, 4) 5355 TC=25 °C (Note.2, 4) 790 * Pulse, Repetitive A 1600 (Note.3) W A 1600 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 Tjmax Maximum junction temperature - 175 V Tcmax Maximum case temperature (Note.2) 125 Tjopr Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 °C °C ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=80 mA, VCE=10 V 5.4 6.0 6.6 V IC=800 A VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time T j =25 °C - 1.95 2.40 VGE=15 V, T j =125 °C - 2.25 - Terminal T j =150 °C - 2.35 - IC=800 A (Note.1) Emitter-collector voltage trr (Note.1) Reverse recovery time Qrr (Note.1) (Note.5) , T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - Chip T j =150 °C - 1.95 - - - 80 , VCE=10 V, G-E short-circuited VCC=600 V, IC=800 A, VGE=15 V VCC=600 V, IC=800 A, VGE=±15 V, RG=0 Ω, Inductive load - - 16 - - 1.32 - 1868 - - - 800 - - 200 - - 600 nF nC ns - - 300 1.85 2.30 G-E short-circuited, T j =125 °C - 1.85 - Terminal T j =150 °C - 1.85 - T j =25 °C - 1.70 2.15 G-E short-circuited, T j =125 °C - 1.70 - Chip T j =150 °C - 1.70 - VCC=600 V, IE=800 A, VGE=±15 V, - - 300 ns μC IE=800 A (Note.5) , , Reverse recovery charge RG=0 Ω, Inductive load - 42.8 - Turn-on switching energy per pulse VCC=600 V, IC=IE=800 A, - 107 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, - 82 - (Note.1) V - (Note.5) Eon Err V T j =25 °C IE=800 A VEC (Note.5) V V mJ Reverse recovery energy per pulse T j =150 °C, Inductive load - 71 - mJ RCC'+EE' Internal lead resistance Main terminals -chip, per switch, T C =25 °C - - 0.4 mΩ rg Internal gate resistance Per switch - 2.45 - Ω Publication Date : August 2011 2 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Item Thermal resistance Rth(j-c)D Rth(c-s) Limits Conditions (Note.2) (Note.2) Contact thermal resistance Min. Typ. Max. Unit Junction to case, per IGBT - - 28 K/kW Junction to case, per FWDi - - 45 K/kW - 15 - K/kW Case to heat sink, per 1/2 module, (Note.6) Thermal grease applied MECHANICAL CHARACTERISTICS Symbol Item Limits Conditions Min. Typ. Max. Unit Main terminals M 8 screw 8.8 9.8 10.8 Mounting torque Auxiliary G/Es Terminals M 4 screw 1.3 1.5 1.7 Mounting to heat sink M 6 screw 3.5 4.0 4.5 m Weight - - 1200 - g ec Flatness of base plate On the centerline X, Y -100 - +100 μm Mt Ms (Note.7) N·m N·m -: Concave +: Convex Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Junction temperature (T j ) should not increase beyond T j m a x rating. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. 6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X Bottom -: Concave Bottom Label side +: Convex Bottom *. DC current rating is limited by power terminals. RECOMMENDED OPERATING CONDITIONS Symbol Item Conditions VCC (DC) Supply voltage Applied across C1-E2 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 RG External gate resistance Per switch Publication Date : August 2011 3 Limits Min. Typ. Max. Unit - 600 850 13.5 15.0 16.5 V V 0 - 5.1 Ω < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi TEST CIRCUIT C1 VGE=15 V IC G1 V C1 Shortcircuited G1 V Shortcircuited VGE=15 V Tr1 C2E1 Shortcircuited Di2 VEC test circuit Publication Date : August 2011 4 E2 Es2 E2 Di1 V C E s a t test circuit IE G2 Es2 Tr2 V Es1 C2E1 G2 E2 Es2 E2 G1 Es1 Shortcircuited IC G2 G2 Es2 V C2E1 C2E1 IE C1 Shortcircuited G1 Es1 Es1 C1 Shortcircuited < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS ～ v GE iE 90 % 0V t t rr IE + C2E1 V CC iC 0A ～ ～ Es1 0 Load G1 -VGE Q rr =0.5×I rr ×t r r iE C1 t 90 % +VGE RG VGE 0V -VGE Irr VCE G2 iC E2 Es2 10% 0A tr t d( o n) tf td ( off ) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE 0 iC iC ICM VCC 0.1×ICM 0.1×VCC ICM VCC t 0 0.5×I r r 0.1×VCC IEM vEC vCE 0.02×ICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0A t 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : August 2011 5 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) 13.5 VGE=20 V 1000 15 11 800 600 T j =125 °C 3.0 12 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) IC (A) COLLECTOR CURRENT 1400 1200 10 400 9 T j =150 °C 2.5 2.0 T j =25 °C 1.5 1.0 0.5 200 0.0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 0 10 200 VCE (V) T j =25 °C 400 600 800 1000 1200 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1400 1600 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) 10 (Chip) 10000 T j =125 °C 8 IE (A) IC=1600 A IC=800 A 6 EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) (Chip) 3.5 1600 IC=320 A 4 1000 T j =150 °C 100 T j =25 °C 2 0 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 10 20 0.0 VGE (V) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE Publication Date : August 2011 6 2.5 VEC (V) 3.0 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=800 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 td(on) td(off) td(off) tr td(on) SWITCHING TIME SWITCHING TIME (ns) (ns) tf 100 tf 100 tr 10 10 10 100 COLLECTOR CURRENT 1000 0.1 IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 RG (Ω) 10 Err SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) (mJ) 1000 SWITCHING ENERGY Eoff SWITCHING ENERGY Eon (mJ) REVERSE RECOVERY ENERGY (mJ) Eoff 100 10 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=800 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 1000 1 EXTERNAL GATE RESISTANCE Eon 100 Eoff Err Eon 10 10 100 1 1000 10 0.1 1 10 EXTERNAL GATE RESISTANCE COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Publication Date : August 2011 7 100 RG (Ω) < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C G-E short-circuited, T j =25 °C 1000 1000 Irr Cies trr t r r (ns), I r r (A) CAPACITANCE (nF) 100 10 Coes 100 1 Cres 0.1 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 10 100 IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) V C C = 600 V, I C = 800 A, T j =25 °C Single pulse, TC=25°C R t h ( j - c ) Q =28 K/kW, R t h ( j - c ) D =45 K/kW Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE VGE (V) GATE-EMITTER VOLTAGE 1000 EMITTER CURRENT 20 15 10 5 0 0 100 VCE (V) 500 1000 1500 GATE CHARGE 2000 2500 3000 QG (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) Publication Date : August 2011 8 0.1 1 10 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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