MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800HA-66H ● IC ................................................................... 800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 4 - M8 NUTS 57±0.25 20 57±0.25 E C E CM E C 3 - M4 NUTS C 140 124±0.25 E 40 C G C E CIRCUIT DIAGRAM G 10.35 6 - φ 7 MOUNTING HOLES 10.65 48.8 15 61.5 40 18 LABEL 30 28 5 38 5.2 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Mass Conditions VGE = 0V VCE = 0V DC, TC = 60°C Pulse Ratings 3300 ±20 800 1600 800 1600 6900 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 (Note 1) Pulse TC = 25°C, IGBT part (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W °C °C V N·m N·m N·m kg ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions Limits Typ — IC = 80mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — 4.40 4.80 80 8.0 2.4 3.8 — — — — 3.30 — 200 — — 0.008 0.5 5.72 — — — — — 1.60 2.00 2.50 1.00 4.29 1.20 — 0.018 0.036 — µA VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 3.75Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 4) Max 10 Unit VCE = VCES, VGE = 0V Min — mA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1600 1600 800 VGE=10V VGE=9V 400 0 2 4 6 VGE=8V VGE=7V 8 10 COLLECTOR CURRENT IC (A) VGE=15V VGE=20V 1200 800 400 Tj = 25°C Tj = 125°C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 8 VGE=15V 6 4 2 Tj = 25°C Tj = 125°C 0 0 400 800 1200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=13V VGE=14V 1200 0 EMITTER-COLLECTOR VOLTAGE VEC (V) VCE=10V VGE=12V VGE=11V 8 IC = 1600A IC = 800A 6 4 IC = 320A 2 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 6 4 2 Tj = 25°C Tj = 125°C 0 Tj = 25°C COLLECTOR CURRENT IC (A) 8 0 10 0 1600 400 800 1200 EMITTER CURRENT IE (A) 1600 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) Tj=25°C 103 7 VGE = 0V, Tj = 25°C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 101 7 5 3 2 Cies Coes Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-66H td(off) 100 td(on) 7 5 tr 3 2 10–1 7 5 SWITCHING ENERGY (J/P) REVERSE RECOVERY TIME trr (µs) 3 2 tf VCC = 1650V, VGE = ±15V RG = 3.75Ω, Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 2 3 5 100 7 5 103 7 5 trr Irr 3 2 10–1 7 5 3 2 5 7 102 2 3 5 7 103 2 3 5 102 7 5 EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.5 VCC = 1650V, VGE = ±15V, RG = 3.75Ω, Tj = 125°C, 2.0 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 VCC = 1650V, IC = 800A, VGE = ±15V, Tj = 125°C, 8 Inductive load Eon Eon 1.5 1.0 Eoff 0.5 Erec 0 0 200 400 600 800 4 2 Eoff 0 10 20 30 CURRENT (A) GATE RESISTANCE (Ω) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) VCC = 1650V IC = 800A 16 12 8 4 0 6 0 1000 20 GATE-EMITTER VOLTAGE VGE (V) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 3.75Ω 2 COLLECTOR CURRENT IC (A) SWITCHING ENERGY (J/P) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 0 1000 2000 3000 4000 GATE CHARGE QG (nC) 5000 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 5 3 2 40 Single Pulse TC = 25°C Rth(j – c)Q = 0.018K/ W Rth(j – c)R = 0.036K/ W 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) Mar. 2003