ETC B772

CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD
TO-92 Plastic-Encapsulate Transistors
www.harom.cn
B772
TRANSISTOR(NPN)
TO-92
FEATURES
Low speed switching
1.EMITTER
2. COLLECTOR
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-3
A
PC
Collector Power Dissipation
0.625
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
3. BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA ,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA ,
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40V, IE=0
-1
μA
Collector cut-off current
ICEO
VCE=-30V, IB=0
-10
μA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-1
μA
hFE(1)
VCE= -2V, IC= -1A
60
hFE(2)
VCE=-2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
-1.5
V
DC current gain
CLASSIFICATION OF
Rank
Range
VCE= -5V, IC=-0.1A
fT
Transition frequency
IB=0
400
50
f =10MHz
MHz
hFE(1)
R
O
Y
GR
60-120
100-200
160-320
200-400
Typical
characteristics
B772