CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn B772 TRANSISTOR(NPN) TO-92 FEATURES Low speed switching 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. BASE 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA hFE(1) VCE= -2V, IC= -1A 60 hFE(2) VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V DC current gain CLASSIFICATION OF Rank Range VCE= -5V, IC=-0.1A fT Transition frequency IB=0 400 50 f =10MHz MHz hFE(1) R O Y GR 60-120 100-200 160-320 200-400 Typical characteristics B772