Total pages CODE No. 81 Total pages of separate sheets Confidential (Preliminary) SPECIFICATIONS PART No.: MN673276 The products and specifications are subject to change without any notice. Please ask for the latest Specifications to guarantee the satisfaction of your product requirements. SYSTEM LSI DIVISION SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED BY DATE PREPARED June 28, 2002 DATE ESTABLISHED APPLIED BY CHECKED BY PREPARED BY Page 1 Confidential (Preliminary) MN673276 SPECIFICATIONS Total pages Page 2 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. ! This document is based on an equivalent Japanese document that was prepared on Apr. 25, 2002. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) 1. Total pages Page 3 Table of Contents ESTABLISHED 1. Table of Contents 2. Product Type 3. Function Overview 4. Features 5. Block Diagram 6. Function Descriptions 7. Register Setting 8. Pin Descriptions 9. Pin Assignment 10. Timing Chart 11. Application Examples 12. CCD Drive/Synchronization Mode REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) 2. Total pages Page 4 Product Type LSI with A/D and D/A converters for digital signal processing (Y, C, ALC, AWB, and AGC) of cameras. 3. Function Overview This is an LSI for monitoring cameras and PC inputs. In addition to its standard function, i.e. luminance and chroma signal processing, this LSI features ALC, AWB, and AGC, which have conventionally been left to a microprocessor, and an analog CDS/AGC circuit, which has conventionally been added externally. These features are integrated with SSG, CG, and I2C into a single chip. 4. Features (1) Input: (2) Output: Analog signal (A/D input) Analog output Y signal C signal Composite output RGB output (3) Operating supply voltage: 3.3 V ± 0.3 V (IO, DAC, analog CDS/AGC) 2.0 V ± 0.2 V (internal logic, ADC) (4) Operating frequency range: 9.5 MHz to 28.7 MHz (5) Form to supply: LQFP100-P-1414 (6) Major functions Built-in 10-bit A/D converter • Built-in 10-bit D/A converter (1 ch) • Built-in 8-bit D/A converter (2 ch) • Built-in analog CDS/AGC • Built-in CG and SSG • 510 H and 768 H (NTSC/PAL system) • Monochrome CCD signal processing is available. • CCD defect compensation circuit (including a color defect corrective function) • Max. digital AGC gain: 18 dB • Left/Right reversal function (controlled by external pins) • Adjustable gamma (0.3 to 1) • Supports external synchronization in HD/VD, VD2, SYNC, and LL modes. • Built-in I2C bus • ELC/AGC • 2-mode white balance (Manual/ATW) with an ATW locking function • OB auto corrective function (analog/digital) • ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED V-Dr V1~V4 R, H1, H2 MN673276 DS1, DS2 CDS/AGC SSG TG 10bit ADC ALC AGC AWB Cprocess Yprocess RGB CONV ENC SDA SCL G/Y/Composit B/C/UV R SPECIFICATIONS (Preliminary) LQFP100-P-1414 I2C I/F 10bitDAC 8bit DAC 2ch REG 5. CCD 510H NTSC/PAL 768H NTSC/PAL Confidential MN673276 Total pages Page 5 Block Diagram SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 6 CDS/AGC/16-bit ADC Block Diagram Inside of the LSI DCCLIP_CONT CPOB CPOB OB_CONTROL OB_CONTROL VFSIG DS1 CCD OUT VDACOB VREFL AGC_Buffer S/H CPOB CDS_Buffer VCA To ADC S/H AMP CDS_Buffer VSSIG DS2 Reset DAC VDACGAIN Clamp voltage Video POWD Feedthrough CPOB To ALC control 0dB_AMP CDS_CLAMP_CONTROL CDS_CLAMP_CONTROL DS1 DS2 (1) The CCD output signals are input to VFSIG and VSSIG of the DSP, and sampled by DS1 and DS2. Then the signal components are output via the differential amplifier. (Properly set the phases of DS1 and DS2 in the registers WEC2 and C3.) (2) After amplification in the AGC amplifier, the OB level is added to the signals, and the signals are input to ADC. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) 6. Total pages Page 7 Function Descriptions (Functions of each block) • CDS/AGC Conducts correlation double sampling on signals output from the CCD to sample signal components. This block also has an analog AGC circuit to perform AGC in an analog fashion. • ADC Converts CCD signals subjected to CDS into 10-bit digital signals. • PATGEN Generates pattern signals with three-color bars. Both horizontal and vertical patterns are available. This block emulates outputs from the four-complementary-color filters of the CCD. This is useful for isolating problems in the analog sections from CCD to ADC from those in the LSI. It can also be used as a blue background by temporarily stopping the video output from the CCD. • AGC (AGC, Pixel MIX, Mirror image, and OB clamp) This is a digital AGC. It performs AGC in a digital fashion interlocked with ALC (Max. +18 dB). In the mirror mode of the 510 H/768 H-pixel CCD, video signals can be reversed by controlling the RAM. This block also corrects OB. The digital mode is for processing in the LSI, and the analog mode is to control the clamp voltage of the IC for CDS/AGC. • ALC Performs full-screen center-weighted averaging metering according to luminance signal inputs, compares the result to a target optimum exposure value, and controls the electronic shutter of the CCD to electronically control the amount of light. During ELC, the AGC circuit is also used for smooth control because the accumulation time of the electronic shutter is discrete. This block also performs a 3-field averaging flicker control. • Y system After generating a luminance signal using outputs from the complementary color filter CCD in LPF, this block generates horizontal and vertical aperture signals, and performs coring, low luminance suppression, gamma correction, and blanking. Two outline corrective levels are selectable in the external pin APGAIN. This block has a CCD defect compensation circuit. Gamma can be continuously adjusted from 0.3 to 1. Ready for monochrome CCD, bypassing the LPF for luminance signals is available. • C system This block performs white balance processing, carrier balance, color temperature correction, and low/high luminance chroma suppression. • AWB Generates auto white balance control signals. With low-illuminance scenes, the white balance operation holds just before an optimum illuminance status. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential (Preliminary) MN673276 SPECIFICATIONS Total pages Page • ENC Modulates in accordance with the selection of NTSC/PAL. Integrates the clock systems into one system by adopting a digital VCO system, which generates 4fSC from FCK. To create composite video signals, Y signals are also mixed in a digital fashion by clock rate conversion. Digital mixing is available for SYNC. • RGBconv This is a matrix circuit to convert YUV signals comprising Y and C signals into RGB signals. Note that the UV signal bands of all 3 channels are not the same as those of Y signals, unlike 3-CCD cameras, because the band of signals is reduced to approx. 800 kHz in the relatively early stages of the C signals. • DAC Converts digital outputs into analog ones. There are three channels, one for composite, Y, and G signals. It also has a 10-bit accuracy for digital mixing of SYNC. The other two channels are 8-bit DAC for chroma, R, and B signals. • PWM Has a 4-ch PWM output that can independently control analog circuits around the LSI. For example, this block can be used for adjusting VREF of DAC. • CG Generates high-speed pulses for CCD (H1, H2, R, DS1, and DS2). The power supply for this logic block is separated from that of other logic blocks in the LSI to protect it from noise. • SSG Generates low-speed pulses for CCD and other pulses for signal processing. Also supports external synchronization. (VBS Gen locking is not available.) • I2C When the power is turned on, this block reads an external EEPROM and sets the registers in the LSI. Because this does not support multi-master, an external device should not be a master when the power is turned on. Read/write in the registers of the LSI from external devices are available (partly restricted). ESTABLISHED REVISED 8 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 9 7. Register Descriptions ADR **H 00H Data Configuration Standard Adjustable R/W Setting Range 7 6 5 4 3 2 1 0 80H W −******* Data Descriptions I2C/SCL frequency switching @i2c (57h: 400 kHz Others: 100 kHz) Read mode switching as a master @i2c (0: Random read 1: Sequential read) OB reference data @obclp (Reference data for digital clamping) 01H 02H H aperture coring @hvap Color/Monochrome switching @ylpf (0: Monochrome 1: Color) (Not assigned) 03H AGC threshold @hvap (When aperture gain decreases due to increase of AGC gain) OB sample select @obclp (Horizontal phase setting: 0 is prohibited) 1T DSEL@obclp (0: 4T width 1: 8T wide-ready) OB clamp ON/OFF switching @obclp (0: ON 1: OFF (digital clamping ON/OFF)) HAP coring when AGC gain increases @hvap NRST phase switching @RRAMCNT ON/OFF of AP gain decreasing when AGC gain increases @hvap (0: OFF 1: ON) AP gain when AGC gain increases @hvap (0: 1/2 1: 1/4) ON/OFF of AP coring up when AGC gain increases @ hvap (0: OFF 1: ON) AP gain decrease threshold hysteresis @hvap (Valid only when AGC gain increases) (Not assigned) @i2c GATEWE @i2c (0: Normal 1: Gated clock mode) READ @i2c (0: Normal 1: Forcefully shifts to the master mode) (Not assigned) 04H 05H 06H 07H 08H 09H 0AH 0BH Edge coloring suppression: Suppression width switching @apcsup (00: 2 01: 3 10: 4 11: 5) Edge coloring suppression: Change amount switching @apcsup (00: 16 10: 8 11: 4) Edge coloring suppression: Max. suppression amount switching @apcsup (00: -25 dB 01: -3 dB 10: -6 dB 11: -12 dB) High illuminance color suppression: Suppression width switching @apg (00: 3 01: 4 10: 5 11: 1) Luminance signal DC setting @yadj Chroma coring @cgain ESTABLISHED REVISED W *−−−−−−− ******** 40H W ******** −−−−−−−* 0CH 01H W W *******− ******** FFH W −−****** 84H W −*−−−−−− *−−−−−−− ******** ******** −−−−−−−* W W 0CH 46H 05H W W W −−−−−−*− W −−−−−*−− W *****−−− W −−−−−−−* −−−−−−*− 02H W −−−−−*−− *****−−− −−−−−−** W E1H W −−−−**−− W −−**−−−− W **−−−−−− W ******** ******** 10H 06H W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) ADR 0CH 0DH 0EH 0FH 10H BPF characteristic switching @prelp (0: (1+Z-2) 3 (1+Z-4) 1: (1+Z-2) 3 FCK 05 phase switching 1 @wbmpy FCK 05 phase switching 2 @wbmpy FCK 05 phase switching 3 @cgmlp FCK 05 phase switching 4 @rbmtx AWB gain fixing SW @wbmpy (0: Normal 1: Fixed WB gain) (Not assigned) Base clip (B-Y) @cgain Base clip (R-Y) @cgain **−−−−−− −−−−**** ****−−−− 00H W W C gamma setup @cgset B carrier balance @cgain (to be adjusted according to the video) R carrier balance @cgain (to be adjusted according to the video) R-Y matrix gain @rbmtx (Not assigned) ******** −−−−**** 00H 00H W W B-Y matrix gain @rbmtx (Not assigned) 13H CCD defect correction: Black detection level LSB @mdf (OFF at FFH, Address 35H for MSB) R-Y gain @cgain 19H Flicker correction ON/OFF switching @fgain (00: ON 01: Y OFF 10: C OFF 11: YC OFF) (Not assigned) B-Y gain @cgain YC phase adjustment @ycdsel UV output control: FH2 phase adjustment @ycdsel UV output control: FC05 phase adjustment @ycdsel UV output control: UV phase adjustment @ycdsel UV output control: C/UV output switching @ycdsel (0: C 1: UV) Y gain @yadj (1x at 80H) AGC-interlocked aperture suppression factor @aagc (00: 1 01: 1/2 10: 1/4 11: 3/8) AGC-interlocked color suppression factor @aagc (00: 1 01: 1/2 10: 1/4 11: 3/8) ESTABLISHED REVISED W ****−−−− 12H 18H 10 W W W W W −−−−−−*− −−−−−*−− −−−−*−−− −−−*−−−− −−*−−−−− CCD defect correction: White detection level LSB @mdf (OFF at FFH, Address 35H for MSB) 16H 17H Page Data Configuration Standard Adjustable R/W Setting Range 7 6 5 4 3 2 1 0 00H −−−−−−−* W Data Descriptions 11H 14H 15H Total pages −******* *−−−−−−− ******** 02H W FFH W −******* *−−−−−−− ******** 22H W FFH W ******** −−−−−−** 9DH 00H W W 86H O5H W ******−− ******** −−−−**** −−−*−−−− −−*−−−−− −*−−−−−− *−−−−−−− W W W W W ******** 80H W −−−−−−** 00H W −−−−**−− W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) ADR 1AH 1BH 1CH 1DH 1EH 1FH 20H 21H Negative/Positive switching @yadj (0: Normal 1: Negative) Normal input/ramp waveform input switching @yadj (0: Normal input 1: Ramp waveform input) (Not assigned) Color defect correction setting @ckizu (00: Correction OFF 10: 2-pixel continuous 11: 1-pixel forced) (Not assigned) 23H 24H 25H 26H 27H 28H 29H R factor @rgb1 (Factor 0.5 at 80H) B factor @rgb1 (Factor 0.5 at 80H) R gain @rgb2 (1x at 80H) B gain @rgb2 (1x at 80H) G gain @rgb2 (1x at 40H) R offset @rgb2 B offset @rgb2 2AH 2BH G offset @rgb2 Insufficient blackening correction start level @yadj (The pedestal sinks at this AGC gain value or less) Insufficient blackening correction low clip value (Clip value: Register value - 64) Insufficient blackening correction gain setting (000: 1/16 001: 1/8 010: 1/4 011: 1/2 100: 1 101: 2) Insufficient blackening correction ON/OFF (0: OFF ON) (Not assigned) PWM0 PWM1 2CH 2DH 2EH 2FH ESTABLISHED REVISED 11 W −−−−−−*− Color gain decrease aperture offset @apcsup (Off at 7FH) Edge color suppression: VAP suppression ON/OFF switching @apcsup (0: OFF 1: ON) AWB saturation level @sat (OFF at FFH) AGC-interlocked aperture suppression offset @aagc (OFF at FFH) AGC-interlocked color suppression offset @aagc (OFF at FFH) RGBCNV U gain @rgb1 (1x at 80H) RGBCNV V gain @rgb1 (1x at 80H) FC05 phase switching @rgb1 UV phase adjustment Page Data Configuration Standard Adjustable R/W Setting Range 7 6 5 4 3 2 1 0 00H W −−−−−−−* Data Descriptions 22H Total pages 1: ******−− −−−−−−** 00H W ******−− −******* 7FH W W *−−−−−−− ******** ******** FFH FFH W W ******** FFH W ******** ******** 80H 80H W W −−−−−−−* −−−−−−*− ******** ******** ******** ******** ******** ******** ******** 00H W W 4CH 1DH 80H 80H 6DH 00H 00H W W W W W W W ******** ******** 00H 00H W W −******* 00H W −−−−−*** 00H W W −−−−*−−− ****−−−− ******** ******** 00H 00H W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR Data Descriptions 30H Digital OB control coring setting Digital OB control hysteresis setting 31H 32H (Not assigned) Internal AD/External AD switching @obclp (0: Normal 1: External AD) Test/Normal switching @ (0: Normal 1: Color bar) (Not assigned) AD power down ON/OFF (0: OFF 1: ON (HCLR = Power down for “H” period) (Not assigned) D clamp/A clamp switching (0: D clamp 1: A clamp) 33H 34H 35H 36H 37H 38H 39H 3AH 3BH 3CH 3DH 3EH 3FH OB auto correction reference value @obclp (OB reference value) (Not assigned) Number of OB sampling times switching @obclp (00: 256 01: 128A 10: 128B 11: 256 (Same as "00")) Reversing video left to right @RRAMCNT (0: Normal 1: Reversed left to right) CCD defect correction: White detection level MSB @mdf (Address 11H for LSB) CCD defect correction: Black detection level MSB @mdf (Address 13H for LSB) (Not assigned) Offset decrement @ladd (Offset: 64 (40H) for 10-bit data) Aperture low illuminance suppression offset @apg 00H: OFF High illuminance color suppression off set @apg FFH: OFF Low illuminance color suppression offset @apg 00H: OFF Aperture low illuminance suppression factor @apg (00: 1 01: 1/2 10: 1/4 11: 3/8) High illuminance color suppression factor @apg (00: 1 01: 1/2 10: 1/4 11: 3/8 100: 0) Low illuminance color suppression factor @apg (00: 1 01: 1/2 10: 1/4 11: 3/8) (Not assigned) VAP coring @hvap VAP coring when AGC gain increases @ hvap HAP gain @hvap (Adjustable from 0x to 4x) VAP gain @hvap (Adjustable from 0x to 4x) Test switching when mounted @yadj (0: Normal 1: Test) Aperture decrease amount switching @hvap (0: Decreasing by 100% 1: Decreasing by 50%) ESTABLISHED REVISED Total pages Page 12 Data Configuration Standard Adjustable R/W Setting Range 7 6 5 4 3 2 1 0 19H W −−−−−*** W *****−−− 00H ******** 10H W −−−−−−−* W −−−−−−*− W −−−−**−− −−−*−−−− W −**−−−−− *−−−−−−− ******** 40H W −−−−−−** −−−−**−− 00H W W −−−*−−−− −−−−−−** 0FH W W −−−−**−− ****−−−− ******** 80H W ******** 00H W ******** 90H W ******** 00H W −−−−−−** 03H W −−−***−− W −**−−−−− W *−−−−−−− ******** ******** ******** ******** −−−−−−−* −−−−−−*− 0CH 0CH 40H 40H 00H W W W W W W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) ADR Data Descriptions 40H ALC full-screen averaging in H direction start @alclp ALC full-screen averaging in H direction end @alclp ALC full-screen averaging in V direction start @alclp ALC full-screen averaging in V direction end Lower 8B @alclp ALC full-screen averaging in V direction end MSB @alclp ALC full-time 3 V control ON/OFF selecting (0: Normal 1: Full-time 3 V control) Setting a particular period after powering on @alclp ON/OFF setting in a particular period after powering on @alclp (0: ON 1: OFF) Center weighting in H direction start @alcar Center weighting in H direction end @alcar Center weighting in V direction start @alcar Center weighting in V direction end Lower 8 bits @alcar (Address 4DH for MSB) Number of sub output lines in the low-speed shutter mode @hactr Number of sub output lines in the mid-speed shutter mode @hactr Switching sub output system (0: Fixed change rate 1: Adjustable) Shutter high/mid speed threshold (HSSO/2 setting) @hactr Shutter mid/high speed threshold (HSSO/2 setting) @hactr ELC (normal) response speed switching (in fixed change rate mode) @hactr (0: 1/4 1: 1/8 2: 1/16 3: 1/32) HSSMAX MSB for sub calculation when outputting H rate (Address 4EH for lower 8 bits) HSSMAXH MSB for sub calculation when outputting 1/16H (Address 4FH for lower 8 bits) Center weighting in V direction end MSB @alcar (Address 49H for lower 8 bits) HSSMAX for 1H control sub output calculation @hactr (For PAL, HSSO/2 setting) HSSMAXH for 1/16H control sub calculation @hactr (For PAL, HSSO/2 setting) 41H 42H 43H 44H 45 46H 47H 48H 49H 4AH 4BH 4CH 4DH 4EH 4FH ESTABLISHED REVISED Data Standard Setting Configuration 76543210 NTSC PAL 510/768 510/768 13H/14H 13H/14H ******** Page 13 Adjustable R/W Range W ******** 89H/C8H 89H/C8H W ******** 0CH 13H W ******** FCH 2FH W -------* 00H 01H W W ------*-******* 40H 40H W W *------******** ******** ******** ******** 27H/3CH 4EH/78H 53H A3H 27H/3CH 4EH/78H 61H C0H W W W W ----**** 28H 28H W W -***---- W *------******** CAH 65H W ******** 4BH 25H W ------** 05H 01H W W -----*-- W ----*--W ---*---******** 06H 9CH W ******** DDH 96H W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) ADR Data Descriptions 50H AGC change amount in HSM @hactr Number of sub output lines in the initial area of 1/16H rate ELC (HSM) response speed switching @hactr (0: 1/2 1: 1/4 2: 1/8 3: 1/16 4: 1/32) ELC speed switching in the high-speed mode after powering on ON/OFF in high-speed mode after powering on (0: ON 1: OFF) 51H Data Standard Setting Configuration 76543210 NTSC PAL 510/768 510/768 62H 62H ---***** ***---------*** 0AH 01H Page 14 Adjustable R/W Range W W W W --***--- W -*------ W 52H 53H 54H 55H 56H 57H 58H 59H 5AH 5BH 5CH 5DH 5EH 5FH 60H 61H 62H (Not assigned) Setting of max. number of sub output lines MSB @hssun (Address 55H for lower 8 bits) Register setting YAVE ON/OFF @alcct (0: Normal 1: YAVE of the register value) Register setting YAVE @alcct (Not assigned) Setting of max. number of sub output lines Lower 8B@hssun Gain setting when AGC is off @agcun AGC response speed switching ON/OFF (ALCNEAR control) @agcun (0: Speed switching 1: Speed fixed) AGC response speed setting (0: 1x 1: 2x) AGC ON/OFF selecting (0: ON 1: OFF) AGC mode switching (0: Digital AGC 1:Analog AGC) AGC max. setting @agcun Analog AGC offset @agcun Digital AGC offset @agcun (Not assigned) Flicker gain selecting @fgain Gain setting when flicker correction in low illuminance scene is off Flicker OFF threshold in low illuminance scene @fgain ALC HSM threshold: Higher than the target value @alcct ALC HSM threshold: Lower than the target value @alcct ALC target value (in BLCON state) @alcct ALC target value (in BLCOFF state) @alcct Convergence coring offset setting @alcct Coring setting when AGC is ON ESTABLISHED REVISED *------------** 01H 02H W W -----*-******** 00H 00H W ******** D4H 50H W ******** -------* 00H 09H 00H 09H W W W W W ------*-----*-----*--******** ******** ******** 80H 40H 20H 80H 40H 20H W W W -------* *******- FFH FFH W W ******** 0AH 0AH W ******** 76H 76H W ******** 14H 14H W ******** ******** ----**** ****---- 4CH 26H 63H 4CH 26H 63H W W W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) ADR Data Descriptions 63H Threshold of 1 V/3 V control switching in the normal state @alcct Coring ON/OFF when AGC is ON (0: OFF 1: ON (1 V only)) Convergence coring setting (0: 1/64 1: 1/128 2: 1/256 3: 1/256) Threshold of sub output rate switching (ALCNEAR) @alcct Coring when BLC is ON IRIS 1 V/3 V control switching (0: ON 1: OFF) ULI Threshold higher than the target value @alcct ULI Threshold lower than the target value @alcct Area A weighting coefficient in the BLCOFF state @alcav (08H: x 1) Area A weighting coefficient in the BLCON state @alcav IRIS change amount switching threshold (IRISNEAR) @alcct HSM 3 V/1 V control switching (0: Switching (1/3 V) 1: Fixed (1 V only)) ON/OFF switching of high-speed mode after powering on (0: ON 1: OFF) HSM ON/OFF switching 64H 65H 66H 67H 68H 69H 6AH 6BH 6CH 6DH 6EH 6FH 70H 71H 72H 73H Area B weighting coefficient in the BLCOFF state @alcav (20H: x 4) Area B weighting coefficient in the BLCON state @alcav (20H: x 4) Area C weighting coefficient in the BLCOFF state @alcav (10H: x 2) Area C weighting coefficient in the BLCON state @alcav (10H: x 2) IRIS coring value setting @alcct SUB output when ALCELC = H @hssun IRIS offset in BLCOFF state (ALCDC) @hssun IRIS offset in BLCON state (ALCDC) @hssun LSB of sub 1/16H rate output start position @hssun LSB of sub output setting when ALCELC = L @ ESTABLISHED REVISED Data Standard Setting Configuration 76543210 NTSC PAL 510/768 510/768 6AH 2AH ---***** --*----- 15 Adjustable R/W Range W W W **--------***** Page CCH CCH W W W -**----*------******** ******** ******** 98H 20H 08H 98H 20H 08H W W W ******** 08H 08H W ---***** 0BH 0BH W W --*----- W -*------ W *--------****** 20H 20H W --****** 20H 20H W --****** 10H 10H W --****** 10H 10H W ---***** ******** ******** ******** ******** 00H 40H 00H 10H F7H 00H 40H 00H 10H 24H W W W W W ******** 00H 00H W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Data Configuration 76543210 ADR Data Descriptions 74H ALC ON/OFF switching @hssun (0: ON 1: OFF) MSB of sub 1/16H rate output start position MSB of sub output setting when ALCELC = L (Not assigned) ELC_ONLY mode (0: ON 1: OFF (Set LSB to 1 first.)) IRIS upper limit setting @hssun Screen-averaged value (Calculated value read) H-rate shutter value HSSO LSB (Calculated value read) 1/16 shutter value HSSOS (Calculated value read) H-rate shutter value HSSO MSB 75H 76H 77H 78H 79H 7AH 7BH 7CH 7DH 7EH 7FH Digital AGC gain (Calculated value read) Analog AGC gain (Calculated value read) AGC gain (before adding offset) (Calculated value read) OB tracking speed switching threshold @obclp OB tracking speed switching @obclp (0: 8x speed 1: 16x speed) Analog OB control offset @obclp LSI CODE @agcreg (LSI development code (register read only)) LSI Version @agcreg (LSI development version (register read only)) ESTABLISHED REVISED -------* -----**---**----*-----*-----******** ******** ******** Standard Setting NTSC 510/768 00H PAL 510/768 02H Page Adjustable Range 16 R/W W W W W 01H 01H W R R R R ----**** --**---******** ******** ******** R R R ---***** --*----- 34H 34H W W ******** ******** 00H 00H 03H W R 01H R ******** SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR Data descriptions 80H Full-screen averaging in H direction start position @awblp 81H Full-screen averaging in H direction end position LSB @awblp Full-screen averaging in H direction end MSB @awblp Full-screen averaging in V direction end MSB @awblp Full-screen averaging 1 V/3 V selecting (V3OFF) @awblp (0: 3 V 1: 1 V) HCLR/TESTHD, VD/TESTVD selecting @awblp (0: HD, VD 1: TESTHD, TESTVD) Horizontal addition divisor switching @awblp (0: 1/128 1: 1/256) ATWLOCK register switching @wbgai (00: Pin control 01: Normal 11: ATWLOCK) Full-screen averaging in V direction start position @awblp Full-screen averaging in V direction end position LSB @awblp AWB response speed switching (for power-on mode) @awblp (0: 1/16 V 1: 1/8 V 2: 1/4 V 3: 1/2 V 4: 1/1 V) AWB response speed switching (for normal mode) @awblp (0: 1/16 V 1: 1/8 V 2: 1/4 V 3: 1/2 V 4: 1/1 V) Default when power-on mode is off @awblp Power-on mode ON/OFF switching @awblp (0: POWR used 1: Default used) Drive pulse setting for AWB gain calculation (F4A, F2A) @awblp AWB delay adjustment @wbave (0: 0T (without delay) 1: 1T added) POWR selecting (V3 control) @wbave (0: V3 control (V3 invalid when POWR is "H") 1: V3 through) Long-time storage mode setting @wbave (0: Long-time storage mode ON 1: OFF) AWB gain clip CG lower limit MSB @wbgai AWB gain clip CG upper limit MSB @wbgai AWB gain clip CMg lower limit MSB @wbgai AWB gain clip CMg upper limit MSB @wbgai AWB OFF gain setting R-Y MSB @wbgai AWB OFF gain setting B-Y MSB @wbgai AWB ON/OFF switching @wbgai (0: ON 1: OFF) (Not assigned) AWB gain clip CG lower limit LSB @wbgai (0F6H) AWB gain clip CG upper limit LSB @wbgai (10BH) AWB gain clip CMg lower limit LSB @wbgai (0F3H) AWB gain clip CMg upper limit LSB @wbgai (10FH) AWB OFF gain setting R-Y LSB @wbgai5 (0D9H) 82H 83H 84H 85H 86H 87H 88H 89H 8AH 8BH 8CH ESTABLISHED REVISED Total pages Page Reset setting 17 Data configuration 7 6 5 4 3 2 1 0 ******** Standard setting 1CH ******** 1AH W −−−−−−** −−−−−*−− −−−−*−−− 43H W W W R/W W −−−*−−−− W −−*−−−−− W **−−−−−− W ******** ******** 0DH FDH W W −−−−−*** 24H W −−***−−− W −*−−−−−− *−−−−−−− W W −−−***** 10H W −−*−−−−− W −*−−−−−− W W *−−−−−−− −−−−−−−* −−−−−−*− −−−−−*−− −−−−*−−− −−−*−−−− −−*−−−−− −*−−−−−− *−−−−−−− ******** ******** ******** ******** ******** 3AH W W W W W W W 80H 40H 40H 80H D9H W W W W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) Total pages Page 8DH AWB OFF gain setting B-Y LSB @wbgai (12CH) Data Configuration Standard Setting 7 6 5 4 3 2 1 0 2CH ******** 8EH 8FH (Not assigned) (Not assigned) ******** ******** 00H 00H 90H 91H (Not assigned) AWB response speed switching ON/OFF SW @wbgai (0: OFF 1: ON) Switching AWB convergence speed in normal mode @wblpf (0: 1 or 4 convergence 1: 1 or 8 convergence) (Not assigned) ******** −−−−−−−* 00H 01H ADR 92H 93H 94H 95H 96H 97H 98H 99H 9AH 9BH 9CH 9DH 9EH 9FH Data Descriptions AWB gain coring hysteresis setting @wblpf ATWLOCK register switching @wblpf (00: Pin control 01: Normal 11: ATWLOCK) (Not assigned) AWB gain coring hysteresis setting @wblpf (Hysteresis valid at this value or less) Power-on mode ON/OFF SW @wblpf (0: ON Default when power-on mode is off @wblpf (Not assigned) 1: OFF) AWB gain initial value 1 (CG) @wblpf (40H x 8 = 200H) AWB gain initial value 2 (YM) @wblpf (40H x 8 = 200H) AWB gain initial value 3 (CM) @wblpf (40H x 8 = 200H) AWB gain initial value 4 (YG) @wblpf (40H x 8 = 200H) AWB response speed switching threshold 1 @wblpf (± 2 for power-on) AWB response speed switching threshold 2 @wblpf (± 4 for power-on) AWB response speed switching threshold 3 @wblpf (± 8 for power-on) AWB response speed switching threshold A @wblpf (± 1 or ± 4 or ± 8 for normal mode) AWB YM average LSB @wbave (READ data) AWB CG average LSB @wbave (READ data) AWB YG average LSB @wbave (READ data) AWB CM average LSB @wbave (READ data) ESTABLISHED REVISED −−−−−−*− ******−− −−−***** −**−−−−− *−−−−−−− −−−***** Reset Setting 18 R/W W W W 22H W W W W 02H W −−*−−−−− −*−−−−−− *−−−−−−− ******** 40H W ******** 40H W ******** 40H W ******** 40H W ******** 10H W ******** 20H W ******** 40H W ******** 1FH W ******** ******** ******** ******** W W R R R R SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR Data Descriptions A0H AWB YM average MSB @wblpf (READ data) AWB CG average MSB @ (READ data) AWB YG average MSB @ (READ data) AWB CM average MSB @ (READ data) A1H A2H A3H A4H A5H A6H A7H A8H A9H AAH ABH ACH LSB of calculated AWB YM gain @wblpf (READ data) LSB of calculated AWB CG gain @wblpf (READ data) LSB of calculated AWB YG gain @wblpf (READ data) (Not assigned) (Not assigned) (Not assigned) (Not assigned) (Not assigned) (Not assigned) (Not assigned) LSB of calculated AWB CM gain @wblpf (READ data) MSB of calculated AWB YM gain @wblpf (READ data) MSB of calculated AWB CG gain @wblpf (READ data) MSB of calculated AWB YG gain @wblpf (READ data) MSB of calculated AWB CM gain @wblpf (READ data) ADH AEH (Not assigned) AWB test mode (TM8) (0h: YMave 1h: CGave 2h: YGave 3h: CMave 4h: WBYMGAIN 5h: WBYGGAIN 6h: YMgain) A/D test mode (7h: CGain 8h: YGain 9h: CMgain) (Not assigned) AFH ALC test mode (TM9) @alcav (0h: Yave 1h: ALCcnt 2h: HSScnt 3h: AGCcnt 4h: MSCB 5h: Fgain 6h: HSSOUT 7h: HSSOS 8h: HSSO Ah: AGCOC Bh: DAGC Ch: ANAGC (0: Normal 1 1: Test)) ALC test input (Not assigned) ESTABLISHED REVISED Total pages Page Data Configuration Standard Setting 7 6 5 4 3 2 1 0 −−−−−−** −−−−**−− −−**−−−− **−−−−−− ******** ******** ******** 00H ******** 00H ******** 00H ******** 00H ******** 00H ******** 00H ******** 00H ******** ******** −−−−−−** −−−−**−− −−**−−−− **−−−−−− 00H ******** 00H −−−−**** −−−*−−−− ***−−−−− −−−−**** −−−*−−−− ***−−−−− Reset Setting 19 R/W R R R R R R R R R R R R W W 00H W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS Total pages (Preliminary) • Page 20 Standard setting of the AWB metering area The delay between the MN673276 input VIN to the AWB input DATAIN (9:0) is 23T, and a total of 28.5 (29T) including delays of input PAD (1T), inside AWB (1T), CDS (1T), and A/D (2.5T). The AWB metering area is set taking into account this video signal delay. In regard to the H direction, the video signal delay is calculated based on the falling edge of HCLR. According to the calculation result, a metering area is set so that horizontal 480-pixel data is sampled for 510H CCD, or 720-pixel data for 768H CCD. In regard to the V direction, a metering area is set so that 230-line data is sampled for NTSC, or 280-line data for PAL, based on the falling edge of VD. The list below shows standard mode-by-mode settings of the AWB metering area. The modes are: Start of full-screen averaging in the H direction (Hstart), End of full-screen averaging in the H direction (Hend) Start of full-screen averaging in the V direction (Vstart), End of full-screen averaging in the V direction (Vend) CCD 510H MN39110 /210 CCDSEL(2:0) NT/PAL Hstart Hend Vstart Vend CCDSEL(2:0)=0h NTSC PAL Hstart= 53(35h) Hstart= 53(35h) Hend=539(21Bh) Hend=539(21Bh) Vstart= 13(0Dh) Vstart= 19(13h) Vend=243(F3h) Vend=299(12Bh) CCDSEL(2:0)=2h NTSC PAL Hstart= 53(35h) Hstart= 53(35h) Hend=779(30Bh) Hend=779(30Bh) Vstart= 12(0Ch) Vstart= 18(12h) Vend=242(F2h) Vend=298(12Ah) CCDSEL(2:0)=3h NTSC PAL Hstart= 53(35h) Hstart= 53(35h) Hend=539(21Bh) Hend=539(21Bh) Vstart= 13(0Dh) Vstart= 19(12h) Vend=243(F3h) Vend=299(12Bh) CCDSEL(2:0)=4h NTSC PAL Hstart= 53(35h) Hstart= 53(35h) Hend=779(30Bh) Hend=779(30Bh) Vstart= 12(0Ch) Vstart= 19(13h) Vend=242(F2h) Vend=299(12Bh) CCDSEL(2:0)=1h 768H MN39143 /243 510H MN39117 /217 768H MN37140 /39241 * For PAL, the register address 82 (Addition data for full-screen averaging in the V direction 1/2 selecting: AVPAL) should be set to "H". Correlation between CCDSEL (2:0) and CCD type CCDSEL(2:0)=0h 510 pixels MN39110 (NTSC) ――― CCDSEL(2:0)=1h CCDSEL(2:0)=2h 768 pixels MN39143 (NTSC) CCDSEL(2:0)=3h 510 pixels MN39117 (NTSC) CCDSEL(2:0)=4h 768 pixels MN37140 (NTSC) ESTABLISHED REVISED 1H=606T ―― 1H=910T 1H=606T 1H=910T 510 pixels MN39210 (PAL) ――― 768 pixels MN39243 (PAL) 510 pixels MN39217 (PAL) 768 pixels MN39241 (PAL) 1H=618T ―― 1H=910T 1H=606T 1H=910T SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR B0H B1H B2H B3H B4H B5H B6H B7H B8H B9H BAH BBH BCH BDH BEH BFH C0H C1H C2H C3H C4H C5H C6H Data Descriptions Breakpoint 1 of broken line γ @gamma Breakpoint 2 of broken line γ @gamma Slope α1 @gamma (determined value) Slope α2 @gamma (Slope: 1/4) Slope α3 @gamma (Slope: 1/4) Y intercept β1 @gamma (determined value) Y intercept β2 @gamma Y intercept β3 @gamma Broken line γ ON/OFF @gamma (0: OFF 1: ON) Negative γ control @gamma (0: Through 1: Gamma) Gamma switching @gamma (0: 0.3 1: MN67352 equivalent) γ characteristic switching @gamma (80H: 0.5x C0H: γ = 0.45 00H: OFF) Broken line start level @gamma Edge detection threshold @prelp Signal phase switching for AWB @prelp HAP LPF ON/OFF switching @hvap (0: OFF 1: ON) VAP LPF characteristic switching @hvap (0: (1+Z-1)2 1: (1+Z-1)2(1+Z-2)) VAP LPF ON/OFF switching @hvap (0: OFF 1: ON) Gain for level adjustment @fgain (0 to 1x) (Not assigned) High-speed pulse phase setting 0 (H1, H2) High-speed pulse phase setting 1 (R) High-speed pulse phase setting 2 (DS1) High-speed pulse phase setting 3 (DS2) High-speed pulse phase setting 4 ENC block Y clock switching (0: Crystal oscillation 1: LC oscillation) CBLK, CSYNC phase adjustment (-8T to +7T (Standard: 0T)) TG output enable signal (0: Internal TG 1: External TG) Normal/Flicker-less/ ELC switching (00: Normal 10: Flicker-less 11: ELC) CH1, 2 pulse reversing SUB pulse reversing V1 pulse reversing V2 pulse reversing V3 pulse reversing V4 pulse reversing HSSOS setting register HSSO setting register LSB ESTABLISHED REVISED Total pages Data Configuration 7 6 5 4 3 2 1 0 ******** ******** ******** ******** ******** ******** ******** ******** −−−−−−−* −−−−−−*− −−−−−*−− Page Standard Reset Setting Setting 72H FFH B3H 2BH 40H 00H 8DH C6H 05H 21 R/W W W W W W W W W W W W ******** FFH W ******** ******** −−−−−−** −−−−−−−* −−−−−−*− 72H 88H 02H 00H W W W W W −−−−−*−− ******** ******** ******** ******** ******** −−−−−−** −−−−−*−− W FFH W 02H 02H 02H 02H 44H W W W W W W −****−−− W *−−−−−−− −−−−−−** W W −−−−−*−− −−−−*−−− −−−*−−−− −−*−−−−− −*−−−−−− *−−−−−−− −−−−**** ****−−−− 00H 00H W W W W W W W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR Data Descriptions C7H HSSO setting register MSB FIN invalid signal HSSOS, HSSO register setting switching (0: Internal connection (to ALC block) 1: Register) FHRST delay switching (−15T to +16T (Standard: 0T)) LLDET mode switching VD selecting signal (0: CSYNC 1: VD) Processing when VCO is unnecessary (0: With VCO 1: Without VCO) Fine adjustment of H phase in the synchronization mode SYNC Fine adjustment of H phase in the synchronization mode HDVD CPOB rising edge phase setting (CPOB start setting value (0T to 31T)) TM3 mode output control switching C8H C9H CAH CBH CCH CDH CEH CFH CPOB falling edge phase setting (CPOB stop setting value (0T to 31T)) CPOB rising edge phase setting (CPOB2 start setting value (0T to 31T)) CPOB falling edge phase setting (CPOB2 stop setting value (0T to 31T)) CPOB/HCLR/FVD/CPOB2 output switching (00: CPOB 01: HCLR 10: FVD 11: CPOB2) PBLK/CBLK/WHD output switching (00: PBLK 01: CBLK 10: WHD) PWM3/FCKO/F2CKO output switching (100: PWM3 01: FCKO 10: FCKO2) ESTABLISHED REVISED Total pages Page Data Configuration Standard Setting 7 6 5 4 3 2 1 0 80H −−****** −*−−−−−− *−−−−−−− Reset Setting 22 R/W W W W −−−***** −−*−−−−− −*−−−−−− *−−−−−−− 10H W W W W ******** 80H W ******** 80H W −−−***** 06H W W −−*−−−−− −−−***** 0AH W −−−***** 06H W −−−***** 0AH W −−−−−−** 00H W −−−−**−− W −−**−−−− **−−−−−− W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR D0H D1H D2H D3H D4H D5H D6H D7H D8H D9H DAH DBH DCH DDH DEH DFH Data Descriptions (R-Y)/(B-Y) switching after DD (1: Rch = (B-Y) 0: Rch = (R-Y)) Rch/Bch phase switching after DD (1: Rch +1T 0: Bch +1T) YC/RGB switching (1: RGB 0: YC) 10-bit DAC output chroma SW (1: Y only 0: Y+C) 10-bit DAC output SYNC SW (1: SYNC OFF 0: SYNC ON) YC/Y, UV switching (1: Y, UV 0: YC) Y data interpolation SW after DD (00: LPF OFF (00 or 01 or 11)) C data interpolation SW after DD (00: LPF OFF (00 or 01 or 11)) Y-line delay adjustment after DD (0 to 7: -1T to +6T) (R-Y) burst level for NTSC (use at NTSC || ( PAL && LSW=L )) (B-Y) burst level for NTSC (use at NTSC || ( PAL && LSW=L )) (R-Y) burst level for PAL (use at PAL && LSW=H) (B-Y) burst level for PAL (use at PAL && LSW=H) Rch/Bch high clip level (use at RGBmode Only) Gch high clip level (+300 hex) Gch low clip level (ref. = BLK level) Pedestal (ref. = BLK level) SYNC level LSB (ref. = BLK level) BLK level LSB (ref. = 00 hex) SYNC level MSB (ref. = BLK level) BLK level MSB (ref. = 00 hex) VCO normal increment LSB (init value for 768 pixels/H NTSC) VCO normal increment MSB (init value for 768 pixels/H NTSC) LSB of corrective increment for each H of VCO (init value for 768 pixels/H NTSC) ESTABLISHED REVISED Total pages Page Data Configuration Standard Setting 7 6 5 4 3 2 1 0 02H −−−−−−−* Reset Setting 23 R/W W −−−−−−*− W −−−−−*−− −−−−*−−− W W −−−*−−−− W −−*−−−−− −−−−−−** W W 15H −−−−**−− W −***−−−− W ******** 00H W ******** D6H W ******** 2AH W ******** D6H W ******** FFH W ******** ******** ******** −−−***** −−−***** −−−−−−−* −−−−−−*− ******** FFH 2AH 2AH FFH 29H 02H W W W W W W W 00H W ******** 80H W ******** 00H W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR Data Descriptions E0H MSB of increment for each H of VCO (init value for 768 pixels/H NTSC) LSB of increment for each V of VCO (init value for 768 pixels/H NTSC) MSB of increment for each V of VCO (init value for 768 pixels/H NTSC) Gain adjustment for 10-bit DAC (0 to 255: GAIN = (x/64)) YGGAIN 3200K center value LSB @wbcc (3200K YGGAIN reference value) YMGAIN 3200K center value LSB @wbcc (3200K YMGAIN reference value) YGGAIN 3200K center value MSB @wbcc YMGAIN 3200K center value MSB @wbcc (Not assigned) R-Y corrective gain (low color temperature) @wbcc (1x at 40H) R-Y corrective gain (high color temperature) @wbcc (1x at 40H) B-Y corrective gain (low color temperature) @wbcc (1x at 40H) B-Y corrective gain (high color temperature) @wbcc (1x at 40H) Center hysteresis part 1 @wbcc (Hysteresis valid at less than this value) Center hysteresis part 2 @wbcc (Threshold of valid hysteresis) Corrective gain limit @wbcc (Limit of the maximum color corrective gain) WBYGGAIN LSB @WBCC (READ data to be set in Address E4 on condition of 3200K) WBYMGAIN LSB @WBCC (READ data to be set in Address E5 on condition of 3200K) WBYGGAIN MSB @WBCC (READ data) WBYMGAIN MSB @WBCC (READ data) (To be set in Address E6 on condition of 3200K) (Not assigned) E1H E2H E3H E4H E5H E6H E7H E8H E9H EAH EBH ECH EDH EEH EFH ESTABLISHED REVISED Total pages Page Data Configuration Standard Setting 7 6 5 4 3 2 1 0 80H ******** Reset Setting 24 R/W W ******** 00H W ******** 80H W ******** B3H W ******** 00H W ******** 00H W −−−−−−** −−−−**−− ****−−−− ******** 0AH W W 40H W ******** 40H W ******** 40H W ******** 40H W −−−−**** 31H W W ****−−−− ******** FFH W ******** W ******** W −−−−−−** −−−−**−− W W ****−−−− W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) ADR Data Descriptions EXTMOD FLC NTPL CCDSEL0 CCDSEL1 CCDSEL2 LLDET ALCELC F0H When the data input PAD is occupied by another test in the test mode, signals can be sent into the circuit by using these registers. F1H A/D sampling timing adjustment A/D clock phase adjustment (Adjustable from 0 to phase reverse) ATWLOCK When the data input PAD is APGAIN occupied by another test in the BLCSW test mode, signals can be sent REV into the circuit by using these (Not assigned) registers. Ramp waveform start position @rampgen Ramp waveform gain adjustment @rampgen (1x at 80H) Ramp waveform max. value LSB @rampgen Ramp waveform max. value MSB @rampgen Color bar start position @patgen Color bar width @patgen Color bar H/V switching @patgen (0: Horizontal 1: Vertical) Color bar phase adjustment @patgen (Not assigned) CDS/AGC/AD cell test mode 1 ADCKREG 0: Normal 1: CDS/AGC power down CDS/AGC/AD cell test mode 3, mode 2 00: Normal 01: CDS/AGC, AD isolation mode 10: AGC DAC output (VAGCOUT pin) 11: OB DAC output (VAGCOUT pin) (Not assigned) (Not assigned) I2C high-speed R/W ON/OFF switching (in test mode) (0: I2C normal operation 1: I2C high-speed R/W (in test mode)) BLCSW/DS1 switching (0: BLCSW input 1: DS1 output) REV/DS2 switching (Valid for other than TM3 and TM29) (0: REV input 1: DS2 output) (Not assigned) NHRST phase switching @plsgen PWM2@pwm PWM3@pwm F2H F3H F4H F5H F6H F7H F8H F9H FAH FBH FCH FDH ESTABLISHED REVISED Total pages Page Data Configuration Standard 7 6 5 4 3 2 1 0 Setting 00H −−−−−−−* −−−−−−*− −−−−−*−− −−−−*−−− −−−*−−−− −−*−−−−− −*−−−−−− *−−−−−−− 04H −−−−**** −***−−−− −−−−−−−* −−−−−−*− −−−−−*−− −−−−*−−− ****−−−− ******** ******** ******** −−−−−−−* ******** ******** −−−−−−−* 00H 00H 80H FFH 01H 7EH 80H 00H Reset Setting 25 R/W W W W W W W W W W W W W W W W W W W W W W W −−−−−−*− −−−−**−− −−−*−−−− W −**−−−−− W *−−−−−−− −−−−**** −−−*−−−− W 10H W −−*−−−−− W −*−−−−−− W *−−−−−−− ******** ******** ******** 46H 00H 00H W W W SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS Total pages (Preliminary) EEPROM Data Descriptions address FEH RGB signal/YC signal switching * To be used for TM19 and TM28 1: R → RGBTO, YCTSEL(TM19, TM28) 1: G → RGBTO, YCTSEL(TM19, TM28) 1: B → RGBTO, YCTSEL(TM19, TM28) 1: YC → ALC →YCTSEL(TM28), RGBTO=0 1: YC → AWB →YCTSEL(TM28), RGBTO=0 1: YC → ENC →YCTSEL(TM28), RGBTO=0 1: YOUT → TCTSEL(TM28), RGBTO=0 1: COUT → YCTSEL(TM28), RGBTO=0 (Not assigned) FFH Slave address register @i2c (Slave address setting of this LSI (Write only)) (Not assigned) Data Configuration 7 6 5 4 3 2 1 0 Page 26 Standard Adjustable R/W Setting Range 00H W W W W W W W W −−−−−−−* −−−−−−*− −−−−−*−− −−−−*−−− −−−*−−−− −−*−−−−− −*−−−−−− *−−−−−−− −******* 2AH W *−−−−−−− [Supplementary remarks] Registers of the ENC block should be set as shown below according to the CCD mode because "***fH" and the number of pixels vary with the mode. VCO register setting 510NTSC:MN39110]606f [510NTSC 606fH 510NTSC 606f VCOC [15:0] =C036H VCOH [15:0] =C08EH VCOV [15:0] =C08EH [510PAL 510PAL:MN39210]618f 618fH 510PAL 618f VCOC [15:0] =EB15H VCOH [15:0] =EB54H VCOV [15:0] =EC61H [510PAL 510PAL:MN39217] 605fH 510PAL 605f VCOC[15:0]=F001H VCOH[15:0]=EE94H VCOV[15:0]=EFA1H [768NTSC]910fH [768NTSC]910f VCOC [15:0] =8000H VCOH [15:0] =8000H VCOV [15:0] =8000H [768PAL]908fH [768PAL]908f VCOC[15:0]=A000H VCOH[15:0]=A1A3H VCOV[15:0]=A2B0H According to the above settings, the registers of the addresses (DD, DE, DF, E0, E1, and E2) should be set as follows: *510H *510H *510H *768H *768H ESTABLISHED NTSC(39110) NTSC=”L”, PAL (39210) NTPL=”H”, PAL (39213) NTPL=”H”, NTSC NTPL=”L”, PAL NTPL=”H”, REVISED DD=36h, DD=15h, DD=BDh, DD=00h, DD=00h, DE=C0h, DE=EBh, DE=EFh, DE=80h, DE=A0h, DF=8Eh, DF=54h, DF=94h, DF=00h, DF=A3h, E0=C0h, E0=EBh, E0=EEh, E0=80h, E0=A1h, E1=8Eh, E1=61h, E1=A1h, E1=00h, E1=B0h, E2=C0h E2=ECh E2=EFh E2=80h E2=A2h SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) 7.1 Page 27 Supplementary descriptions of the CG/SSG registers Register C0 Register C1 Register C2 Register C3 Register C4 ∗∗∗∗∗∗∗∗ ∗∗∗∗∗∗∗∗ ∗∗∗∗∗∗∗∗ ∗∗∗∗∗∗∗∗ - - - - - - ∗∗ CGSW0 CGSW1 CGSW2 CGSW3 CGSW4 High-speed pulse phase setting High-speed pulse phase setting High-speed pulse phase setting High-speed pulse phase setting High-speed pulse phase setting 7 * * * * * * * * * * * * * * * * L H 6 * * * * * * * * * * * * * * L H * * 5 * * * * * * * * * * * * L H * * * * CGSW0 4 3 * * * * * * * * L L L L L H L H H L H L H H H H * * * * * * * * * * * * 2 * * * * L H L H L H L H * * * * * * 1 L L H H * * * * * * * * * * * * * * 0 L H L H * * * * * * * * * * * * * * 7 * * * * * * * * * * * * * * L L H H 6 * * * * * * * * * * * * * * L H L H 5 * * * * * * * * * * * * L H * * * * CGSW1 4 3 * * * * * * * * L L L L L H L H H L H L H H H H * * * * * * * * * * * * 2 * * * * L H L H L H L H * * * * * * 1 L L H H * * * * * * * * * * * * * * 0 L H L H * * * * * * * * * * * * * * ESTABLISHED REVISED Setting operation Operation H1, H2 -1/2T DLY Coarse -1/4T DLY adjustment 0T DLY 1/4 DLY 0DLY Fine 1DLY adjustment 2DLY 3DLY 4DLY 5DLY 6DLY 7DLY FCK(H1, H2) Through Reverse H1, H2 Through Output Reverse R Through Output Reverse Adjusting signal Adjusting signal R FCK(R) R Setting operation Operation -1/2 T DLY Coarse -1/4 T DLY adjustment 0T DLY 1/4 DLY 0DLY Fine 1DLY adjustment 2DLY 3DLY 4DLY 5DLY 6DLY 7DLY Through Reverse 1/4FCK Pulse width 20 ns 15 ns 10 ns SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) 7 * * * * * * * * * * * * * * L H H 6 * * * * * * * * * * * * * * * L H 5 * * * * * * * * * * * * L H * * * CGSW2 4 3 * * * * * * * * L L L L L H L H H L H L H H H H * * * * * * * * * * 2 * * * * L H L H L H L H * * * * * 1 L L H H * * * * * * * * * * * * * 0 L H L H * * * * * * * * * * * * * 7 * * * * * * * * * * * * * * * * L H 6 * * * * * * * * * * * * * * L H * * 5 * * * * * * * * * * * * L H * * * * CGSW3 4 3 * * * * * * * * L L L L L H L H H L H L H H H H * * * * * * * * * * * * 2 * * * * L H L H L H L H * * * * * * 1 L L H H * * * * * * * * * * * * * * 0 L H L H * * * * * * * * * * * * * * 7 * * * * 6 * * * * 5 * * * * CGSW4 4 3 * * * * * * * * 2 * * * * 1 * * L H 0 L H * * Adjusting signal DS1 FCK(DS1) DS1, DS2 Adjusting signal DS2 FCK(DS2) DS2 DS1, DS2 Adjusting signal DS1 DS2 Total pages Page 28 Setting operation Operation -1/2 T DLY Coarse -1/4 T DLY adjustment 0T DLY 1/4 DLY 0CELL DLY Fine 1CELL DLY adjustment 2CELL DLY 3CELL DLY 4CELL DLY 5CELL DLY 6CELL DLY 7CELL DLY Through Reverse 1/4FCK Pulse width 1/4FCK-5 ns 1/4FCK-10 ns Setting operation Operation -1/2 T DLY Coarse -1/4 T DLY adjustment 0T DLY 1/4 DLY 0CELL DLY Fine 1CELL DLY adjustment 2CELL DLY 3CELL DLY 4CELL DLY 5CELL DLY 6CELL DLY 7CELL DLY Reverse Through Through DS2=DS1 Through Output Reverse Setting operation Operation 0 ns DLY 2.6 ns DLY 0 ns DLY 2.6 ns DLY These registers allow the phase adjustment for H1, H2, R, DS1 and DS2. However, some CCDs require initial settings. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 29 Coarse adjustment 2FCK FC K H C LR ・M510・=MHE 5,M E 5 V ,V G A = H C G S W 0(1 :0)= 0 h H1 C G S W 0(1 :0)= 1 h C G S W 0(1 :0)= 2 h C G S W 0(1 :0)= 3 h ・M768,M510B,M768B ・S H 5 ,S O 5 ,S O 7 = = HH C G S W 0(1 :0)= 0 h H1 C G S W 0(1 :0)= 1 h C G S W 0(1 :0)= 2 h C G S W 0(1 :0)= 3 h C G S W 1(1 :0)= 0 h R C G S W 1(1 :0)= 1 h C G S W 1(1 :0)= 2 h C G S W 1(1 :0)= 3 h C G S W 2(1 :0)= 0 h D S1 C G S W 2(1 :0)= 1 h C G S W 2(1 :0)= 2 h C G S W 2(1 :0)= 3 h C G S W 3(1 :0)= 0 h D S2 C G S W 3(1 :0)= 1 h C G S W 3(1 :0)= 2 h C G S W 3(1 :0)= 3 h * H2 has a waveform with a reversed polarization of H1. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 30 Fine adjustment ・ Fine adjustm adjustment ent TYP TYP condition condition ・Fine 26.0 ns 20.3 ns 17.5 ns CGSW *(4:2)=0h CGSW *(4:2)=1h CGSW *(4:2)=2h CGSW *(4:2)=3h CGSW *(4:2)=4h CGSW *(4:2)=5h CGSW *(4:2)=6h CGSW *(4:2)=7h 3.8 ns 3.8 ns 3.8 ns 3.8 ns 3.8 ns 3.8 ns 3.8 ns 7.6 ns 11.4 ns 15.2 ns 19.0 ns 22.8 ns 26.6 ns 0 2 L L L L H H H H SW 1 L L H H L L H H 0 L H L H L H L H 1 2 3 4 6 7 DLY time [ns] Select DLY 0unit 1unit 2unit 3unit 4unit 5unit 6unit 7unit 5 DELAY CELL DELAY CELL DELAY CELL DELAY CELL DELAY CELL DELAY CELL DELAY CELL DELAY CELL M IN 0 1.9 3.8 5.7 7.6 9.5 11.4 13.3 TYP 0 3.8 7.6 11.4 15.2 19.0 22.8 26.6 M AX 0 7.6 15.2 22.8 30.4 38.0 45.6 53.2 3.8-ns DLY is used for for one one unit.unit. 3.8-ns DLYcell cell is used ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 31 Width adjustment 2FCK FCK HCLR CGSW1(7:6)=0h CGSW1(7:6)=1h 20ns 20 ns CGSW1(7:6)=2h 15ns 15 ns R CGSW1(7:6)=3h 10ns 10 ns CGSW2(7:6)=0h,1h DS1 CGSW2(7:6)=2h 5ns 5 ns CGSW2(7:6)=3h 10ns 10 ns CGSW2(7:6)=0h,1h DS2 CGSW2(7:6)=2h 55ns ns CGSW2(7:6)=3h 10ns 10 ns CPOB phase switching Register CB Register CC Register CD Register CE ESTABLISHED REVISED ---***** ---***** ---***** ---***** CPST CPSP CPST2 CPST2 CPOB start set value CPOB stop set value CPOB2 start set value CPOB2 stop set value (0T-31T) (0T-31T) (0T-31T) (0T-31T) SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 32 External/internal TG switch Register C4 *------- TGOE TG output enable signal Setting 0 1 Description Internal TG connected External TG used By setting this register to “1”, H1, H2 and R of the internal TG can be stopped when using the externally connected TG. Flicker setting Register C5 ------** MODE1, 2 Normal/flickerless/electronic aperture switching MODE Description 1 0 2 * Normal: (NTSC) 1/60 s, (PAL) 1/50 s 1 0 Flickerless: (NTSC) 1/100 s, (PAL) 1/120 s 1 1 Electronic aperture: 1/60s (1/50s) to 1/100000s max. Register C5 -----*-- CHREV Register C5 ----*--- SUBREV Register C5 ---*---- V1REV Register C5 --*----- V2REV Register C5 -*------ V3REV Register C5 *------- V4REV Setting 0 1 CH1 and CH2 pulse reversing process SUB pulse reversing process V1 pulse reversing process V2 pulse reversing process V3 pulse reversing process V4 pulse reversing process Description Normal state (normal) Pulse reversed If it’s required to reverse some pulses depending on the CCD used, then set this register. By setting this register to “1”, the polarity of the pulses are reversed. Register C6 - - - - - *** Register C6 ****- - - Register C7 - - ****** RHSSOS Register for setting HSSOS RHSSO Register for setting HSSO (lower bits) RHSSO Register for setting HSSO (upper bits) Setting the register HSSEL to “H” in testing allows this register to set HSSOS or HSSO. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) ・ HSSEL Page 33 HSSOS, HSSO register setting switching Register C7 * ------- HSSEL Setting 0 Total pages HSSOS, HSSO register setting switching Description Internal connection (normal) 1 Register setting (testing) Setting this register to “1” allows HSSOS and HSSO to be set from the register. ・ FD FHRST delay time switching Register C8 ---***** FD FHRST delay time switching Setting 00 1F Description FHRST delay time (MIN) FHRST delay time (MAX) This register can set FHRST in accordance with the delay time on the main line. The standard delay time is set to 10h. ・ LLSEL LLDET system switching Register C8 --*----- LLSEL Setting 0 LLDET system switching Description Conventional system 1 Simplified system Setting this register to “1” can generate pulses with a simple processing not with the conventional complex pre-processing. (Test circuit to study the system). ・ VDSEL VD select signal Register C8 -*------ VDSEL VD select signal Setting Description 0 Outputs CSYNC 1 Outputs VD The CSYNC/VD output pin normally outputs CSYNC. Setting this register to “1” outputs to VD. ・ INT Processing when VCO is not required Register C8 *------- INT Processing when VCO is not required Setting Description 0 With VCO 1 Without VCO Setting this register to “1” forces the crystal oscillation mode to be operated irrespective of the availability of the external synchronization. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Register C9 Register CA ******** HP ******** HP2 Total pages 34 H phase fine adjustment when SYNC is synchronized H phase fine adjustment when HDVD is synchronized Setting Description 00 H phase adjustment for HDVD/SYNC synchronized (MIN) H phase adjustment for HDVD/SYNC synchronized (MAX) FF Page The external SYNC signal is separated by the SYNC separation circuit. Since this causes a delay, correction is carried out before the signal is applied to the phase comparator. For adjustments, 80h is defined as standard. ・ External Pin LLDET LL synchronized switching input Setting Description 0 LL synchronization OFF 1 LL synchronization ON By setting this register, the drive signal corresponding to each mode is output. The MODE shown here is the CCD select signal output to be used by TG. ・ External Pin NP Setting 0 NTSC system 1 PAL system NTSC/PAL switching pin Description This pin allows the color TV system, NTSC or PAL, to be switched. ・ External Pin REV/DS2 left-right reverse switching pin (Register switching, REV as default) Setting Description 0 Normal 1 Reversed This pin allows the picture to be reversed left-right. However, this pin can be switched, using the F2 register, to the function of monitoring the DS2 output by the internal register. The REV input is default setting. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) ・ External pin CCDSEL0 – 2 Setting NP CCDSEL 2 1 0 0 0 0 0 1 0 1 0 1 ――― 0 1 0 0 M768 1 0 1 1 1 0 0 1 0 1 Description 510 pixels MN39110 series, MN39116 (NTSC) 510 pixels MN39210 series, MN39216 (PAL) 0 0 35 CCD switching pin MODE M510 Page M510B M768B 768 pixels MN39143 (NTSC) 1/3 type 768 pixels MN39243 (PAL) 1/3 type 510 pixels (NTSC) 510 pixels (PAL) 768 pixels (NTSC) 768 pixels (PAL) By setting this register, the drive signal corresponding to each mode is output. The MODE shown here is the CCD select signal output to be used by TG. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Internal connection Internal connection Internal connection - - - - **** ******** -------* HSSO0-3 HSSOS0-7 HSSOS8-9 Page 36 Electronic shutter setting (SUB pulse) Electronic shutter setting (SUB pulse) Electronic shutter setting (SUB pulse) WHD SUB A B C D E F G H I J K L M N O P A TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP SUB position A B C D E F G H I J K L M N O P Data setting HSH(8:0) HSL3 HSL2 HSL1 HSL0 606fh * 0 0 0 0 TA 38T 0 0 0 1 TB 38T * * 0 0 1 0 TC 38T * 0 0 1 1 TD 38T * 0 1 0 0 TE 38T * 0 1 0 1 TF 38T * 0 1 1 0 TG 38T * 0 1 1 1 TH 37T 1 0 0 0 TI 38T * * 1 0 0 1 TJ 38T * 1 0 1 0 TK 38T * 1 0 1 1 TL 38T * 1 1 0 0 TM 38T 1 1 0 1 TN 38T * * 1 1 1 0 TO 38T * 1 1 1 1 TP 37T Timing 618fh 780fh 39T 49T 39T 49T 39T 49T 38T 48T 39T 49T 38T 49T 39T 49T 38T 48T 39T 49T 39T 49T 39T 49T 38T 48T 39T 49T 38T 49T 39T 49T 38T 48T 910fh 57T 57T 57T 57T 57T 57T 57T 56T 57T 57T 57T 57T 57T 57T 57T 56T Remarks 908fh 57T VBLK period 57T 57T 56T 57T 57T 57T 56T 57T 57T 57T 56T 57T 57T 57T 56T Electric charge accumulation time is as follows. NTSC: (261 - HSH(8:0))H (where 0 < n ≤ 260) For n=0, 262 or 263H PAL: ESTABLISHED (311 - HSH(8:0))H (where 0 < n ≤ 310) For n=0, 312 or 313H REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) 8. Total pages Page 37 Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 Pin name CDSOUT VOBDAT AGCOUT AGCVSS VCLDAT AGCVDD CDSVDD VFSIG VSSIG CDSVSS 11 REV/DS2 12 I/O O O O VSS O VDD VDD I I VSS Description CDS output (for control of ALC lens) Output OB level stabilization pin Grounded via C. AGC output Ground for AGC block Input DC level stabilization pin Grounded via C. AGC block power supply 3.0 V CDS block power supply 3.0 V CDS IN CDS IN Ground for CDS block Left-right reverse switching, H: reversed, L: normal / CDS sampling pulse output (register switching, REV as default) BLC switch, L: OFF, H: ON / CDS sampling pulse output (register switching, BLCSW as default) I O Electric charge read pulse for V1 O Electric charge read pulse for V3 O Reset pulse output for the electronic shutter board VDD Logic block power supply 1 2.0 V VSS Ground for logic block, I/O block VDD I/O block power supply 1 3.3 V I/O Serial data I/O Serial clock I 13 14 15 16 17 18 19 20 BLCSW/DS1 CH1 CH2 SUB VDD1 VSS1 VDDIO1 SDA SCL 21 COIN 22 23 24 25 26 27 28 29 30 31 NTPL CCDSEL0 CCDSEL1 CCDSEL2 TGVDD TGIOVSS RR TGIOVDD H2 H1 I I I I VDD VSS O VDD O O NTSC/PAL switch, L: NTSC, H: PAL CCD select CCD select CCD select TG logic block power supply 2.0 V Ground for I/O block, logic block of TG Reset pulse output Power supply 3.3 V for I/O block of TG φ H2 horizontal register transfer clock φ H1 horizontal register transfer clock 32 33 34 35 36 OSCCNT CXIN CXOUT OSCVDD OSCVSS O I O VDD VSS LC oscillation control Hi-Z in the LL mode or Low-Z, otherwise Oscillation input Oscillation output Oscillation block power supply 3.3 V Ground for oscillation block ESTABLISHED I REVISED Oscillation input (LC) SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Pin No. 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 Pin name TEST0 TEST1 TEST2 TEST3 TEST4 I/O I I I I I Total pages Page 38 Description Test mode setting (Normally, use at Low setting.) Test mode setting (Normally, use at Low setting.) Test mode setting (Normally, use at Low setting.) Test mode setting (Normally, use at Low setting.) Test mode setting (Normally, use at Low setting.) V1 O φ V1 vertical register transfer clock V2 O φ V2 vertical register transfer clock V3 O φ V3 vertical register transfer clock V4 O φ V4 vertical register transfer clock VDDIO2 VDD I/O block power supply 2 3.3 V VSS2 VSS Ground for logic block, I/O block VDD2 VDD Logic block power supply 2 2.0 V FWHD O FWHD output CPOB/HCLR O CPOB/HCLR/FVD/CPOB2 output (register switching, CPOB as default) /FVD/CPOB2 PBLK/CBLK O PBLK/CBLK/WHD output (register switching, PBLK as default) /WHD CSYNC O CSYNC output EXTMOD I Monitor/vehicle mounting mode switch, L: monitor, H: vehicle mounting FLC I Flickerless mode (gain correction), L: OFF, H: ON External synchronization input pin, monitor mode: LP, vehicle mounting mode: EXTIN0 I CSYNC/HD EXTIN1 I External synchronization input pin, monitor mode: VD2, vehicle mounting mode: VD LLDET I INT/LL switch, L: INT synchronization, H: LL synchronization ALCELC I ALC/ELC switch, L: ELC, H: ALC APGAIN I AP gain switch, L: sharp, H: soft (APGAIN = 0) ATWLOCK I ATW lock, L: normal operation, H: lock SCANT I Scanning test (Normally, use at Low setting.) MINTEST I MINTEST (Normally, use at Low setting.) VDDIO3 VDD I/O block power supply 3 3.3 V VOUT2 Regulator output pin outputting 2.0 V VSS3 VSS Ground for logic block, I/O block VDD3 VDD Logic block power supply 3 2.0 V RESET I Power-ON reset input PWM0 O PWM output, ch 0 PWM1 O PWM output, ch 1 PWM2 O PWM output, ch 2 PWM3/FCK O PWM output, ch 3/FCKO/F2CKO output (register switching, PWM as default) O/F2CKO PCO1 O Phase comparator output (for crystal oscillation) PCO2 O Phase comparator output (for LC oscillation) AREAPULS O BLC frame pulse output IRIS O ALC DC control ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Pin No. Pin name 76 VCXO 77 FVR Total pages Page 39 78 LPFI 79 80 81 82 83 84 85 86 87 88 89 90 91 RSIG DAVDD2 DAVSS2 BSIG COMP23 IREF23 VREF23 DAVDD1 DAVSS1 GSIG COMP1 IREF1 VREF1 I/O Description O Analog SW output I VCXO control voltage input (analog SW input, DC input for frequency adjustment for INT or LL) I VCXO control voltage input (analog SW input, monitor: V LPF, vehicle mounting: H LPF) O R output VDD DA23 power supply 3.0 V VSS Ground for DA23 O C/B output I Pin for phase correction Connects C across DAVDD2 I Resistor pin for setting bias current I Reference voltage input pin VDD DA1 power supply 3.0 V VSS Ground for DA1 O Composite/Y/G output I Pin for phase correction Connects C across DAVDD1 I Resistance pin for setting bias current I Reference voltage input pin 92 93 94 95 96 97 98 99 100 VREFH VREFM VREFL TADIN ADVSS ADVDD VREFLO VREFHO CDSDAT I I I I VSS VDD O O O ESTABLISHED REVISED AD reference power supply VRT input AD reference power supply VRM input AD reference power supply VRB input AD Input Ground for AD AD power supply 2.0 V AD reference power supply VRB output AD reference power supply VRT output OB & AGC control DAC output (VDACOB, VDACGAIN) SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) 9. Total pages Page 40 Pin Assignment Please refer to the evaluation board circuit diagram. Figure 2 Pin assignment ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 41 10. Timing Chart • VD2 synchronization Aprox . 3 µ s V D2 C .SY NC 1.47 µ s • LL synchronization (power supply synchronization) 1V EIA 60 H z D uty Approx. 50% LP CCIR 50 Hz D uty Approx. 50% T he falling edge is reference edge. C.SYN C Phase is adjusted externally • V.SYNC Phase is adjusted externally by mono-multi type. SYNC synchronization GLSYNC GLSYNC C.SYNC C.SYNC HHLOCK phase LOCK位相 • VリセットIN V reset IN HDVD synchronization SYNC SYNC HD HD VD VD HH LOCK phase LOCK位相 ESTABLISHED REVISED 9H(NTSC) 9H(NTSC) SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 SPECIFICATIONS Total pages ESTABLISHED 42 EVEN EVEN 34 34 Page REVISED 20H(MECは21H) 20H (21H for MEC) VBLK CBLK BF VD VP HS 519 EQ 525 0 VS 3H 9H 6 EQ 20H(MECは21H)+11μS 20H (21H for MEC) + 11µs 12 HS 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 524 523 522 521 520 519 518 517 516 515 514 513 SYNC SSG部タイミングVレート(NTSC) SSG block timing V rate (NTSC) 39 38 37 36 35 34 33 32 31 30 ODD EVEN ODD ODD EVEN (Preliminary) ODD Confidential SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 SPECIFICATIONS Total pages ESTABLISHED ①③ 43 45 ②④ ②④ 45 Page REVISED 25H VBLK CBLK BF VD VP HS 620 EQ 625 0 VS 2.5H 7.5H 25H+12.0 µs 5 EQ 10 HS 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 624 623 622 621 620 619 618 617 616 615 614 613 SYNC SSG block timing V rate (PAL) SSG部タイミングVレート(PAL) 51 50 49 48 47 46 45 44 43 42 ④ ③ ② ① ①∼④ ①∼④ ②④ ①③ (Preliminary) ①③ Confidential SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED EBF 4.72 561T 4.72 1.57 45T 0T(606T) 591T XT 4.72 22T 2.31 11.01 10.07 5.35 4.72 22T 2.31 51T 45T 11.01 10.07 90T 81T 75T 2.52 90T 81T 1T=1/9.5350 MHz =104.8772 ns 258T 4.72 1.57 288T 4.72 1.57 288T XT 325T 2.31 258T 303T 303T 325T 2.31 [µs] [µs] ※ XTはシステムディレイを示す * XT indicates a system delay. (Preliminary) VSER 561T 1.57 591T NTSC 606 fH fH=15.7343 kHz SPECIFICATIONS EQ HSYNC VD HBLK WHD (H9) FVSER FEQ FHSYNC FVD FBLK FWHD (FH9) 0T(606T) SSG block timing H rate (NTSC 510H) SSG部タイミングHレート(NTSC 510H) Confidential MN673276 Total pages Page 44 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED EBF 4.66 573T 4.66 1.55 45T 0T(618T) 603T XT 4.66 22T 2.28 12.12 9.94 5.59 4.66 22T 2.28 54T 45T 12.12 9.94 102T 81T 76T 2.28 81T 102T 1T=1/9.6563 MHz =103.5599 ns 264T 4.66 1.55 294T 4.66 1.55 294T XT 331T 2.28 264T 309T 309T ※ XTはシステムディレイを示す 331T 2.28 [µs] [µs] * XT indicates a system delay. (Preliminary) VSER 573T 1.55 603T PAL 618 fH fH=15.625 kHz SPECIFICATIONS EQ HSYNC VD HBLK WHD (H9) FVSER FEQ FHSYNC FVD FBLK FWHD (FH9) 0T(618T) SSG block timing H rate (PAL 510H) SSG部タイミングHレート(PAL 510H) Confidential MN673276 Total pages Page 45 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED EBF 4.66 562T 4.66 1.55 44T 4.66 100T 5.59 53T 44T 12.12 9.94 79T 22T 2.28 0T(303T) 591T XT 2.28 4.66 22T 12.12 9.94 75T 2.28 79T 100T 1T=1/9.4688MHz =105.6106ns 259T 4.66 1.55 288T 4.66 1.55 288T XT 2.28 325T 259T 303T 303T 325T 2.28 [µs] [μs] ※ XTはシステムディレイを示す * XT indicates a system delay. (Preliminary) VSER 562T 1.55 591T PAL 606fH fH=15.625KHz SPECIFICATIONS EQ HSYNC VD HBLK WHD (H9) FVSER FEQ FHSYNC FVD FBLK FWHD (FH9) 0T(606T) SSG block timing H rate (MN39217 PAL PAL510H) 510H) SSG部タイミングHレート(SONY Confidential MN673276 Total pages Page 46 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED EBF 4.68 843T 4.68 1.47 67T 4.68 135T 5.31 76T 67T 10.90 9.64 117T 33T 2.31 0T(910T) 889T XT 2.31 4.68 33T 10.90 9.64 112T 2.51 117T 135T 1T=1/14.3182MHz =69.8413ns 388T 4.68 1.47 434T 4.68 1.47 434T XT 2.31 488T 388T 455T 455T 488T 2.31 [µs] [μs] ※ XTはシステムディレイを示す * XT indicates a system delay. (Preliminary) VSER 843T 1.47 889T NTSC 910fH fH=15.7343KHz SPECIFICATIONS EQ HSYNC VD HBLK WHD (H9) FVSER FEQ FHSYNC FVD FBLK FWHD (FH9) 0T(910T) SSG block timing H rate (NTSC 768H) SSG部タイミングHレート(NTSC 768H) Confidential MN673276 Total pages Page 47 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED EBF 4.72 841T 4.72 1.55 67T 5.64 2.33 33T 80T 67T 12.05 9.80 149T 117T 4.72 0T(908T) 886T XT 2.33 33T 4.72 12.05 9.80 2.26 112T 117T 149T 1T=1/14.1875MHz =70.4846ns 387T 4.72 1.55 432T 4.72 1.55 432T XT 2.33 487T 387T 454T 454T 2.33 487T [µs] [μs] *※XTXTはシステムディレイを示す indicates a system delay. (Preliminary) VSER 841T 1.55 886T PAL 908fH fH=15.625KHz SPECIFICATIONS EQ HSYNC VD HBLK WHD (H9) FVSER FEQ FHSYNC FVD FBLK FWHD (FH9) 0T(908T) SSG block timing H rate (PAL 768H) SSG部タイミングHレート(PAL 768H) Confidential MN673276 Total pages Page 48 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 49 ! MN39110 series: High-speed pulse timing ○MN37110シリーズ 高速パルスタイミング F2CK FCK 23T 77T(89T) HCLR 21T 75T(87T) IHCLR 22.5T 77T(89T) H1 H2 R DS1 DS2 CCD output CCD出力 ! MN39110 series: H rate timing ○MN37110シリーズ Hレートタイミング 606T(618T) 0T FWHD 96T OB (2 bits) OB(2bit) Dummy (1 bit) ダミー(1bit) OB(28bit) 空送り(3bit) OB (28 bits) Idle feed (3 bits) CCD output CCD出力 H1 H2 10T ダミー(6bit) Dummy (6 bits) 有効512bit Valid 512 bits 22.5T 77T(89T) 22.5T 77T(89T) 23T 77T(89T) HCLR CPOB (Enlarged view of section B) (B部分拡大) 16T CPSW(1:0)=0h 85T(96T) 0T PBLK 50T 35T V1 45T V2 30T V3 55T 40T V4 47T SUB 60T 65T 67T 77T(89T) FH2 L fixed L固定 FH4 Note) ・1=1/FCK(NTSC:104.88ns,PAL:103.56)。 " 1 = 1/FCK (NTSC: 104.8 ns, PAL: 103.56 ns) (注) " OT represents the rising edge of FWHD. ・0TはFWHDの立ち上がり。 " ( ) for PAL " V1, V2, V3, V4 and SUB are reversed by the V driver and input to CCD. ・()内はPAL時。 ・V1、V2、V3、V4、SUBはVドライバで反転されて CCDに入力する。 ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED 30T 40T 35T 30T 40T 50T 2T 32T 22.5T 23T 42T 77T 77T 72T 77T(89T) 77T(89T) 22.5T 23T 55T 65T 60T 65T 60T 55T 50T 45T 40T 35T 77T(89T) 77T(89T) Total pages V4* V3* 50T 77T(89T) 22.5T 35T 77T(89T) 23T 0T = 104.88 ns: NTSC, 103.56 ns: PAL " 1T ・1T=104.88ns:NTSC,103.56ns:PAL ) for PAL " (・()内はPAL時 ・*はVドライバで反転する。 " ∗ is reversed by the V driver. 0T (Preliminary) V2* 0T (Enlarged view of section A) (A部分拡大) SPECIFICATIONS V1* [ Field B ] [Bフィールド] V4* V3* V2* V1* [ Field A ] [Aフィールド] CH2* CH1* H2 H1 HCLR FWHD ! MN39110 series: Timing in detail ○MN37110シリーズ 詳細タイミング Confidential MN673276 Page 50 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED HCLR A 1 2 3 4 HSSO(9:0)=1h時 When HSSO (9:0) = 1h 5 6 Total pages CPOB PBLK H2 は高速シャッタ動作期間 is the high-speed shutter operating period. OB (Preliminary) H1 B 490 492 491 OB SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* CCD出力 CCD output FVD FWHD CBLK ・SUBはシャッタ時のみ。 " SUB for shutter only ・*はVドライバで反転する。 " ∗ is reversed by the V driver. 513514515516517518519520521522523524525 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 NTSC-A field NTSC−Aフィールド ! MN39110 series: V rate timing ○MN37110シリーズ Vレートタイミング Confidential MN673276 Page 51 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED A 2 3 6 7 HSSO(9:0)=1h時 When HSSO (9:0) = 1h 4 5 Total pages HCLR CPOB PBLK H2 isは高速シャッタ動作期間 the high-speed shutter operating period. OB 1 (Preliminary) H1 B 489 491 OB 490 492 SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* CCD出力 CCD output FVD FWHD CBLK ・SUBはシャッタ時のみ。 " SUB for shutter only ・*はVドライバで反転する。 " ∗ is reversed by the V driver. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289 NTSC−Bフィールド NTSC-B field ○MN37110シリーズ Vレートタイミング ! MN39110 series: V rate timing Confidential MN673276 Page 52 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED A 1 2 3 4 When HSSO (9:0) =1h HSSO(9:0)=1h時 5 6 Total pages HCLR CPOB PBLK H2 は高速シャッタ動作期間 is the high-speed shutter operating period. OB 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 (Preliminary) H1 B 580 582 581 OB 4 5 6 7 8 " ∗ is reversed by the V driver. ・SUBはシャッタ時のみ。 " SUB for shutter only ・*はVドライバで反転する。 SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* CCD出力 CCD output FVD FWHD CBLK 613614615616617618619620621622623624625 1 2 3 PAL−Aフィールド PAL-A field ○MN37110シリーズ Vレートタイミング ! MN39110 series: V rate timing Confidential MN673276 Page 53 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED A 2 3 4 5 When HSSO (9:0) = 1h HSSO(9:0)=1h時 6 7 Total pages HCLR CPOB PBLK H2 isは高速シャッタ動作期間 the high-speed shutter operating period. OB 1 (Preliminary) H1 B 579 581 OB 580 582 SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* Output 出力 FVD FWHD CBLK " SUB for shutter only ・SUBはシャッタ時のみ。 ・*はVドライバで反転する。 " ∗ is reversed by the V driver. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340 PAL-B field PAL−Bフィールド ! MN39110 series: V rate timing ○MN37110シリーズ Vレートタイミング Confidential MN673276 Page 54 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED 616T 578T (10T) 47T 85T 123T 161T 199T 237T 275T SUB CH1 FWHD 313T 350T 388T 426T 464T 502T 540T 616T 578T (10T) 0T(606T) 47T 85T 123T 161T 199T 237T 275T 313T 350T 388T 426T 464T 502T 588T 627T (9T) 47T 86T 125T 164T 202T 241T 279T 318T 356T 395T 434T 473T 511T 550T 588T 627T (9T) 0T(618T) 47T 86T 125T 164T 202T 241T 279T 318T 356T 395T 434T 473T 511T 39T 38T 39T 39T 39T 38T 39T 38T 39T 38T 39T 39T 39T 38T 39T 38T 39T 38T 39T 39T 39T 38T 39T 38T 39T 38T 39T 39T 39T 38T A B C D E F G H I J K L M N O P 312または313 3 L L L L H H H H L L L L H H H H 2 L L H H L L H H L L H H L L H H HSSOS(3:0) 1 L H L H L H L H L H L H L H L H 32T Max. shutter speed 2T 最高速シャッタスピード 1/108460 s 1/108460s 89T 9.22μs 9.22 µs 0T(618T) In上記条件に加えて addition to the condition mentioned above: CH1パルスの直前の1水平走査期間のみN∼Pのパルスが指定された場合、Mの位置にパルスを発生さ If pulses N through P are specified only in one horizontal scanning period immediately before the せる。 CH1 pulse, a pulse is generated at position M. HSSO(9:0)で指定された水平タイミングまで有効期間内、VBLK内共毎H出力。 Output every H both within the valid period and VBLK until the horizontal timing specified by HSSO(9:0). HSSO(9:0)で指定されたAパルスに引き続く1水平操作期間内であり、且つそのラインがCH1が印可 Only one pulse specified by HSSOS(3:0) in B through P is output if it falls in one horizontal operating period immediately following pulse A specified by HSSO(9:0) and the line falls in VBLK before CH1 is applied. されるまでのVBLK内であればB∼Pの内のHSSOS(3:0)で指定される1パルスのみを出力する。 動作条件 Operating condition 32T (Preliminary) PAL:(311−n)H PAL: (311 – n)H (但し、0<n≦310) (where 0 < n ≤ 310) n=0では、 For n = 0, 312 or 313 4 L L L L L L L L H H H H H H H H 2T Max. shutter speed 最高速シャッタスピード 1/110865 s 1/110865s 86T 86T 9.02 µs 9.02μs 0T(606T) SPECIFICATIONS (但し、0<n≦260) NTSC: (261 – n)H n=0では、 (where 0 < n ≤ 260) 262または263 For n = 0, 262 or 263 NTSC:(261−n)H Ifn=HSSO(9:0)と定義すれ defined as n = HSSO(9:0), ば、電荷蓄積時間は、次式で the electric charge 定義される。 accumulation time is defined by the following equation: HSSO(9:0) 20T 20T 2.07μs 2 .07 µs 3.99μs 3.99μs 3.99 µs 3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 38T N O P A B C D E F G H I J K L M N O P A B C D E F G H I J K L M 550T 0T(618T) 20T 20T 22.10μs .10 µs 38T 38T 37T 38T 38T 38T 38T 38T 38T 38T 37T 38T 38T 38T 38T 38T 38T 38T 37T 38T 38T 38T 38T 38T 38T 38T 37T 38T 38T 38T 38T 3.99 µs3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.88μs 3.88 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99μs 3.99 µs 3.99 3.99μs 3.99μs 3.99μs 3.99μs µs N O P A B C D E F G H I J K L M N O P A B C D E F G H I J K L M 540T 0T(606T) [ PAL mode: 1T=1/FCK=103.56 ns ] [PALモード:1T=1/FCK=103.56ns] SUB CH1 FWHD [ NTSC mode: 1T=1/FCK=104.88 ns ] [NTSCモード:1T=1/FCK=104.88ns] ! MN39110 series: Electronic aperture SUB pulse timing chart (high-speed mode) ○MN37110シリーズ 電子絞りSUBパルス タイミング図(高速モード) Confidential MN673276 Total pages Page 55 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 56 ! MEC 1/3 type 768H CCD high-speed pulse timing ○MEC 1/3型 768H CCD 高速パルスタイミング CLKCG FCK 122T(138T) HCLR IHCLR 41T 120T(136T) 39T 40.5T 122T(138T) H1 H2 R DS1 DS2 CCD output CCD出力 (Enlarged view of section B) (B部分拡大) ! MEC1/3型 1/3 type 768H 768H CCD H rate timing ○MEC CCD Hレートタイミング 910T(908T) 0T FWHD CCD output CCD出力 138T(139T) OB bits) OB(2(2 bit) Valid 771 bit:N bits: N 有効771 Dummy bits) ダミー(6(6bit) 753 bit:P bits: P 753 OB(43 bit) OB (43 bits) H1 H2 40.5T 122T(138T) 40.5T 122T(138T) 41T 122T(138T) HCLR CPOB PBLK 21T 30T CPSW(1:0)=0h 0T 128T(142T) 44T(46T) V1 62T(68T) V2 35T V3 89T(101T) 80T(90T) 53T(57T) V4 98T(112T) 80T(90T) SUB 106T(120T) 122T(138T) FH2 FH4 71T(79T) L fixed L固定 (Note) " 1T=1/FCK (69.8 ns: NTSC, 70.4 ns: PAL) ns:PAL)。 (注) ・1T=1/FCK(69.8 ns:NTSC,70.4 " 0T ・0TはFWHDの立ち上がり。 is the rising edge of FWHD. ・()内はPAL時。 " ( ) for PAL ・V1、V2、V3、V4、SUBはVドライバで反転されて " V1, V2, V3, V4 and SUB are reversed by the V driver and input to CCD. CCDに入力する。 ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED 112.5T(126.5T) 35T 53T(57T) 35T 62T(68T) 44T(46T) 53T(57T) 35T 62T(68T) 98T(112T) 80T(90T) 89T(101T) 71T(79T) 582T 578T 748T 748T 712T 53T(57T) 62T(68T) 44T(46T) 98T(112T) 80T(90T) 89T(101T) 98T(112T) 80T(90T) 89T(101T) 71T(79T) Total pages V4* V3* V2* 44T(46T) 582T 578T 676T 642T 112.5T(126.5T) 112T(126T) (Preliminary) V1* 98T(112T) 80T(90T) 89T(101T) 606T 35T 35T " 1T=1/FCK=69.8 ns: NTSC, 70.4 ns: PAL ・1T=1/FCK=69.8 ns:NTSC,70.4 ns:PAL ・()はPAL時 " ( ) for PAL ・*はVドライバで反転する。 " ∗ is reversed by the V driver. SPECIFICATIONS [ [Bフィールド] Field B ] V4* V3* V2* V1* 71T(79T) 112T(126T) 35T [ [Aフィールド] Field A ] CH2* CH1* H2 H1 HCLR FWHD of section A) ! MEC 1/3 type 768H768H CCDCCD V rate timing in detail (Enlarged view (A部分拡大) ○MEC 1/3型 Vレート詳細タイミング Confidential MN673276 Page 57 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED HCLR 8 B A 4 3 is the high-speed shutter は高速シャッタ動作期間 operating period. 2 1 6 5 When HSSO (9:0) = 1h HSSO(9:0)=1h時 8 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Total pages CPOB PBLK H2 7 (Preliminary) H1 6 OB 5 Dummy 4 491 OB 3 490 492 2 "・SUB for shutter SUB はシ ャ ッ タonly 時のみ。 "・∗*isはreversed byでthe Vすdriver. Vドライバ 反転 る。 SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* CCD output CCD出 力 FVD FWHD CBLK 513514515516517518519520521522 523524525 1 NTSC-A N T S Cfield −Aフィールド ! MEC 1/3 type 768H CCD V rate timing ○ MEC 1/3型 768H CCD V レ ー ト タ イ ミ ン グ Confidential MN673276 Page 58 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED HCLR 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 A 3 2 is the high-speed shutter は 高 速 シ period. ャッタ動作期間 operating 1 B OB 492 Dummy 491 OB 5 4 7 6 When HSSO (9:0) = 1h HSSO(9:0)=1h時 Total pages CPOB PBLK H2 3 (Preliminary) H1 2 SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* CCD output CCD出 力 FVD FWHD CBLK 1 ・*はVドライバで反転する。 250251252253254255256257258259 260261262263 264 265266267268269270271272273274275276 277278279280281282283284285 286287288289 NTSC-B N T S Cfield −Bフィールド !○ MEC 1/3 type 768H CCD V rate timing MEC 1/3型 768H CCD V レ ー ト タ イ ミ ン グ " SUB for shutter only " ∗ is reversed by the V driver. ・SUBはシャッタ時のみ。 Confidential MN673276 Page 59 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED HCLR 6 7 8 は 高速シャ ッタ動作期間 operating period. A OB B Dummy 581 OB 2 1 5 6 7 8 When HSSO (9:0) = 1h HSSO(9:0)=1h時 4 3 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Total pages CPOB PBLK H2 5 (Preliminary) H1 4 is the high-speed shutter 3 580 582 2 "S SUB shutter ・ U Bfor はシ ャ ッ タonly 時のみ。 "* ∗ is reversed byでthe Vすdriver. ・ はV ドライバ 反転 る。 SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* CCD output CCD出 力 FVD FWHD CBLK 613614615616617618619620621622623624625 1 PAL-A field ! MEC 1/3 type 768H CCD V rate timing Confidential MN673276 Page 60 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED HCLR 6 7 A OB ダミー Dummy 1 2 3 4 7 8 When HSSO (9:0) = 1h HSSO(9:0)=1h時 5 6 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Total pages CPOB PBLK H2 5 is the high-speed shutter は高速シャッタ動作期間 operating period. 4 (Preliminary) H1 B 580 582 581 OB 2 3 " SUB for shutter only ・SUBはシャッタ時のみ。 ・*はVドライバで反転する。 " ∗ is reversed by the V driver. SPECIFICATIONS FH4 FH2 SUB* CH2* CH1* V4* V3* V2* V1* CCD output CCD出力 FVD FWHD CBLK 613614615616617618619620621622623624625 1 PAL−Aフィールド PAL-B field ! MEC type 768H V rate timing ○MEC 1/31/3型 768HCCD CCD Vレートタイミング Confidential MN673276 Page 61 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED 3. 98 μs 57 T N 820T 56 T 57 T A 80T SUB CH1 FWHD A B C D E F G H I J K L M N O P 56 T 2 L L H H L L H H L L H H L L H H 606T 145T 10.2 μ s 642T Max. shutter speed 最高速シャッタスピード 1/98039 s 0T(908T) Max. shutter speed 最高速シャッタスピード 1/90909 s Operating 動 作condition 条件 1 L Output every H both within the valid period and VBLK until the horizontal timing specified by HSSO(9:0). H Only one pulse specified by HSSOS(3:0) in B through P is output if it falls in one horizontal operating period L immediately following pulse A specified by HSSO(9:0) and the line falls in VBLK before CH1 is applied. H L H L H In addition to the condition mentioned above: L If pulses H through P are specified only in one horizontal scanning period immediately before the H CH1 pulse, a pulse is generated at position G. L H L H L H 2. 11 μs 30 T G 431T 3. 98 μs 57 T F 374T 3. 98 μs 57 T E 317T 3. 91 μs 56 T D 261T 3. 98 μs 57 T C 204T 3. 98 μs 57 T B 147T 3. 98 μs 57 T A 90T 1. 81 μs 26 T G 422T 3. 98 μs 57 T F 365T 3. 98 μs 57 T E 308T 3. 98 μs 57 T D 251T 3. 98 μs 57 T C 194T 3. 98 μs 57 T B 137T 3. 98 μs 57 T A 80T 642T (Preliminary) PAL: (311 – n)H (where 0 < n ≤ 310) For n = 0, 312 or 313 3 L L L L H H H H L L L L H H H H HSSOS(3:0) 3. 91 μs 56 T P 942T (34T) 3. 98 μs 57 T O 885T 3. 98 μs 57 T N 828T 3. 98 μs 57 T M 771T 0T(908T) 3. 91 μs 56 T P 606T 158T 11.0 μ s 0T(910T) SPECIFICATIONS NTSC: (261 – n)H (where 0 < n ≤ 260) For n = 0, 262 or 263 If defined as n = HSSO(9:0), the electric charge accumulation time is defined by the following equation: 4 L L L L L L L L H H H H H H H H 3. 91μ s 56 T L 715T 3. 98 μs 57 T K 658T 3. 98 μs 57 T J 601T 3. 98 μs 57 T I 544T 3. 91 μs 56 T H 488T 3. 98 μs 57 T G 431T 3. 98 μs 57 T F 374T 3. 98 μs 57 T E 317T 3. 91 μs 56 T D 261T 3. 98 μs 57 T C 204T 3. 98 μs 57 T B 147T 3. 98 μs 57 T A 90T HSSO(9:0) 3. 91 μs 57 T 3. 98 μs 57 T 3. 98 μs 942T (34T) P 885T O N 828T 0T(908T) 3. 98 μs 57 T O 934T (24T) 0T(910T) 877T 3. 98 μs 57 T N 820T 3. 98 μs 57 T M 763T 3. 98 μs 57 T L 706T 3. 98 μs 57 T K 649T 3. 98 μs 57 T J 592T 3. 98 μs 57 T I 535T 3. 91 μs 56 T H 479T 3. 98 μs 57 T G 422T 3. 98 μs 57 T F 365T 3. 98 μs 57 T E 308T 3. 98 μs 57 T D 251T 3. 98 μs 57 T C 194T 3. 98 μs 57 T B 137T 3. 91 μs 3. 98 μs 57 T 3. 98 μs P 934T (24T) O 877T 0T(910T) PAL ns ] [[ P A mode: L モ ー1T=1/FCK=70.4 ド :1T=1/2FCK=70.4ns] SUB CH1 FWHD NTSC 1T=1/FCK=69.8 ns ] [[ N T Smode: Cモー ド :1T=1/FCK=69.8ns] ! MEC 1/3 type 768H CCD: Electronic aperture SUB pulse timing chart (high-speed mode) ○ MEC 1/3型 768H CCD 電 子 絞 り S U B パ ル ス タ イ ミ ン グ 図 ( 高 速 モ ー ド ) Confidential MN673276 Total pages Page 62 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) 11. Page 63 Application Examples 11.1 System configuration examples (1) Configuration A (minimum configuration) ! Internal synchronization ! Composit output Color CCD (2) Configuration B ! Internal synchronization ! RGB output EEPROM 75 Ω driver MN673276 ~ V driver Color CCD EEPROM MN673276 V driver EEPROM 75 Ω driver G 75 Ω driver B EEPROM LL pulse MN673276 YC mixing V driver Analog SW R (4) Configuration D ! Internal synchronization ! Y output (3) Configuration C (Monitor camera) ! External synchronization ! YC output Color CCD 75 Ω driver VCXO 75 Ω driver VD2 separation B/W CCD MN673276 ~ 75 Ω driver V driver VCO 11.2 Reset It is recommended to use an exclusive reset IC to reset the system securely when the power is turned ON/OFF. 3.3 V MN673276 Reset circuit Reset 75 MN13821J Design the rank of the reset IC taking the allowance of the system into consideration. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 64 11.3 Power supply and grounding The power supply pins are isolated from one another as listed below to prevent noise from being induced inside the LSI. When connecting a power supply on a board, it is recommended to isolate the blocks from one another using LC filters as shown below. The figure shows a diagram in which a 3.3 V power supply is used. Name VDDIO1-3 TGIOVDD OSCVDD DAVDD1-2 CDSVDD AGCVDD Power supply (3. 3 V) Logic block (IO) CG(IO) Oscillation pin (IO) DAC+AnaSW Analog CDS Analog AGC Name VDD1-3 TGVDD ADVDD Power supply (2. 0 V) Logic block (internal) CG (internal) ADC Logic block 3.3 V VDDIO1~3 VSS1~3 TG block TGIOVDD Oscillation block OSCVDD OSCVSS DAC block DAVDD1~2 DAVSS1~2 CDS block CDSVDD CDSVSS AGC block AGCVDD AGCVSS * If a large power supply noise is generated in the TG block, a fixed pattern noise may be generated in the CCD. Therefore, it is recommended to reserve an entire internal layer of a multi-layer board for grounding. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 65 11.4 ADC reference voltage pin MN673276 TADIN 95 Analog signal input (TADIN) Reference voltage low level (VREFL) VREFL 94 10-bit ADC VREFM VREFH 93 92 Reference voltage high level (VREFH) VREFL VREFH Min. Typ. ADVSS 0.5 2.0 Max. Unit V ADVDD V The dynamic range of the input signal is determined by VREFH – VREFL. It is recommended to use it with a minimum of 1.5 V [P-P]. The direct current resistance across VREFH and VREFL is 240 Ω to 740 Ω. Design the power supply so that its impedance is low enough not to cause voltage variations. The maximum conversion speed of the A/D converter built in this LSI is 20 MSPS. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS Total pages (Preliminary) Page 66 GOUT ROUT BOUT 11.5 DAC reference voltage pin VREF23 85 IREF23 84 COMP23 83 BSIG 82 DAVSS2 81 DAVDD2 80 RSIG 79 VREF1 91 IREF1 90 COMP1 89 GSIG 88 DAVSS1 87 DAVDD1 86 RIREF(R/B) C RL(B) MN673276 RL(R) RIREF(G) C RL(G) R1 R2 R4 0.01 µF R3 ! Fit a capacitor of approx. 1 µF at COMP. 0.01 µF ! With RL = 120 Ω and RIREF = 4.7 kΩ, adjust R1/R2 and R3/R4 so that the desired amplitude of the video signal is obtained with VREF = 1.23 V. ! 10-bit DAC (Gch, Y, composite) The equation holds: VOUT = (9.84 x VREF/RIREF x RL x N/1023) ! 8-bit DAC (Rch/Bch, C) The equation holds: VOUT = (7.96875 x VREF/RIREF x RL x N/255) ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 67 11.6 Clock oscillation system REVISED PWM SYNC synchronization phase E X T I N 1 E X T I N 0 E X T M O D CXIN CXOUT V CASW2 X F O V R L P F I P P C O L L D E T External synchronization mode judgement COIN SW OSCCNT TGOE WE C4h bit7 R H2 H1 CLR DS2 DS1 FCK2O Oscillation control High-speed pulse generator SUB V4 V3 V2 V1 CH2 CH1 NTPL CCDSEL2 CCDSEL1 CCDSEL0 ASW1 HCLR CPOB FBLK FVD FWHD 2FCK for ENC WHD 2FCK SYNC/VSYNC/VD CBLK/HREF ESTABLISHED External synchronization mode prohibited (I2C) Low-speed pulse generator Internally connected pulse (1) Internal synchronization SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED CXIN CXOUT FCK2O COIN SW ASW2 F V V C R X O L L D E T E X T I N 1 NTPL CCDSEL2 CCDSEL1 CCDSEL0 LP phase adjustment circuit PWM VD2 LP SYNC synchronization phase (Preliminary) LPF LPF L P PPC PPC FC C IO O 2 EE XX TT MI ON D0 External synchronization mode judgement External synchronization mode prohibited (I2C) Internally connected pulse SPECIFICATIONS “Hi-Z” in LL mode OSCCNT “H” in LL mode R H2 H1 ASW1 SUB V4 V3 V2 V1 CH2 CH1 2FCK for ENC HCLR CPOB FBLK FVD FWHD 2FCK WHD Low-speed pulse generator CBLK/HREF Oscillation control DS2 DS1 High-speed pulse generator SYNC/VSYNC/VD CLR TGOE WE C4h bit7 Confidential MN673276 Total pages Page 68 (2) Monitor camera mode (LL and VD2 synchronization) SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 69 (3) Vehicle mounting mode REVISED synchronization mode “Hi-Z” in external COIN CXIN CXOUT V ASW2 C F X V O R L P F I LPF PC P C O L L D E T E X T M O D EE XX TT II NN 01 VD CSYNC/HD SYNC synchronization phase External synchronization mode judgement OSCCNT TGOE WE C4h bit7 R H2 H1 FCK2O SW DS2 DS1 CLR Oscillation control High-speed pulse generator SUB V4 V3 V2 V1 CH2 CH1 ASW1 HCLR CPOB FBLK FVD FWHD “H” in external synchronization mode WHD 2FCK for ENC CBLK/HREF NTPL CCDSEL2 CCDSEL1 CCDSEL0 2FC SYNC/VSYNC/VD ESTABLISHED External synchronization mode prohibited (I2C) Low-speed pulse generator Internally connected pulse For HD/VD synchronization or SYNC synchronization, the horizontal phase can be varied by the internal register setting. Variation of the horizontal phase acts on both the composite output and RGB output. The variable range is ±5 µs. SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 70 11.7 External TG mode CCD V driver MN3112 DS1 DS2 R H2 H1 External TG FCK2O SUB CXIN FVD FWHD NC V4 V3 VSS5 VDD5 V2 NC V1 NC SUB NC CH2 CH1 CXIN CXOUT FVD FWHD PWM0 To drive a CCD not supported by the MN673276, the external TG mode can be used. Set bit 7 of the address C4 of the register to “H”. The MN673276 supplies FCK2O, FWHD, and FVD to the external TG. The CCD is driven with the CCD drive pulses except SUB of the external TG. SUB of the MN673276 must be used. Otherwise, ELC will not operate. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 71 11.8 External synchronization and input pin Since the logic of the external synchronization input pin to be pulled up or down (depending on the mode) varies as follows, a pull-up/-down resistor is not built in. Set as shown in the table below. The monitor/vehicle mounting mode is switched by the external pin (EXTMOD). Mode Vehicle mounting mode Monitor mode EXTMOD 1 0 Monitor mode The external synchronization supports the VD2 synchronization and LL synchronization. The priority is VD2, LL, and INT in order. Mode EXTIN0 EXTIN1 (1) Input signal LP VD2 Pin setting Pull-down Pull-down VD2 synchronization When VD2 is input to the EXTIN1 pin, the VD2 synchronization automatically becomes active. LL synchronization The internal synchronization/LL synchronization are switched by the external pin (LLDET). When the LP pulse is input to the EXTIN0 pin with LLDET being “H”, the LL synchronization becomes active. This LSI does not have an LL-phase variation function as a DSP. An external phase adjustment is necessary by a mono-multivibrator, etc. (2) Vehicle mounting mode The external synchronization supports the SYNC synchronization and HD/VD synchronization. The priority is SYNC, HD/VD, and INT in order. Mode EXTIN0 EXTIN1 Input signal CSYNC/HD VD2 Pin setting Pull-up Pull-down (1) SYNC synchronization When EXTSYNC is input to the EXTIN0 pin, the SYNC synchronization automatically becomes active. (2) HD/VD synchronization When EXTHD is input to the EXTIN0 pin and EXTVD is input to the EXTIN1 pin, the HD/VD synchronization becomes active. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 72 11.9 CCD drive circuit (1) H1, H2 and R, 3.3 V drives CCD For high-speed pulses, insert a dumping resistor, etc. to meet the CCD drive specifications. V4 V3 V2 V1 SUB CH2 CH1 V driver MN3112 R H2 H1 The position and width of the R can be adjusted by the register. For details, refer to the register map. MN673276 (2) H1, H2 and R, 5 V drives CCD H driver If the high-speed pulses (H1, H2 and R) of the CCD requires to be driven by the amplitude of 5 V, use 74VHC04, etc. to convert the level. V driver MN3112 ESTABLISHED REVISED V4 V3 V2 V1 SUB CH2 CH1 R H2 H1 74VHC04 MN673276 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 73 11.10 Mode setting pin The mode setting pin is logically fixed to reduce the number of externally fitted components supposing that this LSI is used for PC or vehicle mounting, or to realize a frequently used state. Pin name NYPL FLC EXTMOD SCANT Logic L H H L Description NTSC system Flicker correction ON Vehicle mounting mode (HD or VD/SYNC synchronization mode) Normal operation L: pull-down, H: pull-up 11.11 External control signal Six types of input pins are provided to allow the functions of the LSI to be controlled externally. These controls can also be switched by I2C. Pin name LLDET ALCELC ATWLOCK APGAIN BLCSW REV ESTABLISHED REVISED Description Switching internal synchronization/LL synchronization L: internal synchronization H: LL synchronization Switching mechanical iris fixed/ELC L: ELC H: mechanical iris fixed Stopping ATW L: normal H: ATWLOCK Switching aperture gain L: sharp H: soft (APGAIN=0) Switching target value L: normal H: Switches target value Executing left-right reverse L: normal H: reversed SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 74 11.12 Output specifications Supports the following analog outputs. No digital output is provided. ・ Composite output ・ YC separated outputs ・ RGB outputs ・ Y/UV outputs (U and V are alternately output every 1H as shown below.) HD Y1 Y2 Y3 Y4 U1 V2 U3 V4 11.13 Signal processing back-end circuit Setting the register carries out the output mode switching. (1) Composite output The modulated color signal does not pass a BPF to reduce the number of components nor form a typical sine wave. If a certain level of signal quality is required, then provide a BPF in the C block using the YC output mode shown below. IREF23 COMP23 BSIG DAVSS1 DAVDD1 RSIG VREF1 IREF1 COMP1 GSIG DAVSS2 DAVDD2 MN673276 6 dB AMP Note) If a D/A converter is not used, set COMP23 = Vdd and IREF23 = VREF23 = 0. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 75 (2) YC output DAVDD2 DAVSS2 GSIG COMP1 IREF1 VREF1 RSIG DAVDD1 DAVSS1 BSIG COMP23 IREF23 VREF23 MN673276 R1 6 dB AMP R2 BP The YC output can be adjusted (±5T) by the register WE17h. Register 17 ---- **** YCDSEL YC phase adjustment (3) RGB DAVDD2 DAVSS2 GSIG COMP1 IREF1 VREF1 RSIG DAVDD1 DAVSS1 BSIG COMP23 IREF23 VREF23 MN673276 6 dB AMP 75 Ω drive 6 dB AMP 75 Ω drive 6 dB AMP 75 Ω drive Note) With regard to (1), (2), and (3) above, if the high-bright part of the video signal is clipped due to the register setting or the dynamic range of the output amplifier, the density of each line of the color signal may be inconsistent. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS (Preliminary) Total pages Page 76 11.14 External PWM output Five PWM outputs are provided. They can be used for any purpose, including the adjustment of the oscillation frequency. Since the output voltages of the PWM outputs depend on VDD (digital power supply voltage), care should be taken in the design of the power supply if accuracy is required for the output voltages. MN673276 PWM3 PWM2 PWM1 PWM0 IRIS Example of application) PWM0 (Internal synchronization/frequency adjustment for SC block in the LL mode) PWM1 (DAC1 gain) PWM2 (DAC2 and DAC3 gains) PWM3 Free IRIS ALCDC adjustment 11.15 Control block Aperture control The aperture is controlled by a combination of electronic shutter controls and digital AGC. (1) High-speed mode A high-speed mode is provided so that the target value is attained at power-ON. Note that the high-speed mode is activated only for a certain period immediately after the power is turned ON. (Register variable range: 1 s max.) The response speed in the high-speed mode is switched by 1 V/3 V. (2) Mechanical iris control The MN673276 is not provided with a mechanical iris control function but is provided with PWM output to adjust DC. An external circuit detecting the CDS output signal performs the iris control. (3) Flicker correction A flicker correction function with a 3-V averaging method is provided. Refer to ADR15 in the description of registers. (4) Maximum ELC speed Settable between 1/60 s and 1/100000 s. The maximum value can be varied by a register. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 77 (5) Backlight correction To enable metering with a backlight taken into consideration, the target value switching, weighting coefficient switching, and frame pulse output are available in an interlock with the backlight correction SW (BLCSW). [Specifications of a frame pulse] When BLC is ON, a frame pulse (AREAPULS) is output which becomes “H” only for the central area. This allows the ALC (Galvano lens) control to be performed only with the brightness information obtained in the central area. This is beneficial in the backlight condition. AREAPLUS 0 0 Area A × coefficient × coefficient Area B Area C × coefficient As the above frame pulse alone is not effective in the ELC mode or in the AGC area, the weighting coefficient can be varied with BLC-ON. (x 0.5, x 0.6, x 1, etc.) BLC Target value Weighting Register Area OFF Target value 1 ON Target value 2 Weighting coefficient 1 Weighting coefficient 2 Weighting coefficient 3 67 h 6A h 6C h Weighting coefficient 4 Weighting coefficient 5 Weighting coefficient 6 68 h 6B h 6D h Acts on AGC/ELC control ESTABLISHED REVISED Frame pulse ALC DC A B C Not output (fixed at H) Set value 1 A B C Output Set value 2 Acts on ALC (Galvano lens) control SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 78 11.16 White balance The white balance is determined by the average of an entire screen’s data. By processing the average data in 2’s complement, the deviance of the increase in AGC gain on white balancing is reduced. By changing the bit expansion of the ATW block from 9 bits to 10 bits, the accuracy of white balance is improved. (Major functions) ・ There are two modes: ATW and MANUAL. The mode is set by a register. ・ In the ATW mode, a limiter value for high color temperature/low color temperature can be set. ・ In the ATW mode, a LOCK function is provided. Setting the external pin ATWLOCK fixes the white balance. For example, when shining a light source on a piece of white paper and setting ATWLOCK after the ATW takes the data, the white balance is set. ・ In the MANUAL mode, a value is set in the internal register. ・ In the ATW mode, a high-speed mode is provided so that white balance converges at the moment of power-ON. Note that the high-speed mode is activated only for a certain period immediately after the power is turned ON. (Register variable) ・ The response speed in the high-speed mode is the maximum speed (or less) settable by the MN673276. ・ The ULI function provided stops ATW in the high-brightness mode. Note) Suppose that the camera set (LSI) is shut down with ULI in operation after ATW is locked. The next time the camera is turned ON, the colors may vary because the information of white balance was not retained. ALC (aperture control)/AWB (white balance) metering area Settable values for the area are limited. Refer to the register map for details. Start point of ALC area X-width of ALC area Start point of ALC center-weighted metering area X-width of ALC center-weighted metering area ×1 ×4 ×2 Y-width of ALC area Start point of AWB area Y-width of ALC center-weighted metering area X-width of AWB area Y-width of AWB area ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS Total pages (Preliminary) Page 79 11.17 OB control The OB control consists of an analog and a digital controls. The analog control is the method in which the clamping voltage for the analog CDS/AGC is controlled so that the OB level detected internally by this LSI remains constant. The digital control is the method in which the signal level within the LSI is controlled so that the OB level detected internally by this LSI remains constant. Analog OB control CCD MN673276 CDS AGC OB cont AD 10(b) + Signal processor − offset DAC 10(b) OB averaged 10(b) A B Comparator Target value Activation level is determined by the difference between A and B. 10-bit up/down counter Digital OB contorol CCD CDS AGC 8(b) Clip 2s→bin MN673276 OB cont AD 10(B) + Signal processor − DAC OB averaged Fixed value ESTABLISHED REVISED + − 10(2s) A Comparator 10(b) B Target value Activation level is determined by the difference between A and B. 10-bit up/down counter 10(2s) 8(2s) Clip SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MN673276 Confidential SPECIFICATIONS (Preliminary) Total pages Page 80 11.18 External interface The I2C interface is used to connect the external control of the MN673276 with the EEPROM for storage of the register value used for adjustment. Pull-up resistor 4.7 kΩ-10 kΩ MN673276 SCL SDA SCL SDA X24C02S81 To adjusting jigs or external control equipment (PCs, etc.) EEPROM ・ The I2C control modes supported by the MN673276 are as follows. At power-ON: Sequential read (random read) of all addresses (256 bytes) of the EEPROM Others: Random read and byte-order write ・ Concerning mode DSP EEPROM Adjusting PC At activation MR, Master Receiver ST, Slave Transmitter × While adjusting SR, Slave Receiver MT, Master Transmitter × SR, Slave Receiver MT, Master Transmitter While adjusting and × writing At RST after MR, Master Receiver ST, Slave Transmitter × adjustment ・ The slave address of the EEPROM is 55h and that of the MN673276 is fixed at 2Ah. The adjusting PC, etc. may change the slave address of the MN673276 after activation but it is not retained in the EEPROM. ・ Since SCL is generated by the system clock with a fixed frequency dividing ratio, it is 100 kHz for 768 pixels. However, SCL will become slower when a 510-pixel CCD is used. ・ Before reading the data in the EEPROM when the power is turned ON, it is necessary to execute the following initialization sequence to initialize the EEPROM. SCL 1 2 8 9 SDA Start condition ESTABLISHED REVISED Dummy clock (9CLK) Start condition Stop condition SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ESTABLISHED REVISED ∬ 12C (DATA) (Preliminary) Total pages The read-out time depends on the frequency of FCK. SPECIFICATIONS It is prohibited that jigs or external control equipment works as a master. Image is output after reading all addresses. Operation when the system is activated Analog image output DSP reads from the master EEPROM. ∬ After approx. 3 V ∬ Synchronizing VD Reset IC output Power supply voltage ∬ Confidential MN673276 Page 81 SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. Confidential MN673276 SPECIFICATIONS Total pages (Preliminary) Page 82 12. CCD Drive/Synchronization Mode Internal pin setting CCD supported FCK CCDSEL2 CCDSEL1 External pin setting CCDSEL0 NTPL VCOC DEh: DDh VCOH E0h: DFh VCOC E2h: E1h AWB area setting Internal synchronization HD and VD synchronization VD2 and LL synchronization 510H PAL MN37210 618fH 0 0 0 1 510H PAL MN37213 606fH 0 1 1 1 768H NTSC MN37140 910fH 1 0 0 0 768H PAL MN37241 908fH 1 0 0 1 C036h EB15h EFBDh 8000h A000h C08Eh EB54h EE94h 8000h A1A3h C08Eh EC61h EFA1h 8000h A2B0h The setting values in the register WE80 to 84 for AWB and WE40 to 44 for ALC depending on the mode. ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Composite ○ ○ ○ ○ ○ YC separation ○ ○ ○ ○ ○ RGB ○ ○ ○ ○ ○ YUV time-division multiplex ○ ○ ○ ○ ○ Output Synchronization ALC area setting 510H NTSC MN37110 606fH 0 0 0 0 All corresponding color filters for the CCD support complementary colors, as well as black and white elements. ESTABLISHED REVISED SYSTEM LSI DIVISION, SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.