D
TO-247
G
APT1001R6BN 1000V 8.0A 1.60Ω
S
POWER MOS IV
APT1002R4BN 1000V 6.5A 2.40Ω
®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT
1001R6BN
APT
1002R4BN
UNIT
1000
1000
Volts
8
6.5
32
26
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
240
Watts
Linear Derating Factor
1.96
W/°C
PD
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
On State Drain Current
APT1001R6BN
1000
APT1002R4BN
1000
APT1002RBN
8
APT1002R4BN
6.5
TYP
MAX
UNIT
Volts
2
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
MIN
2
Amps
APT1001R6BN
1.60
APT1002R4BN
2.40
Ohms
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mA)
2
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.51
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-0109 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT1001R6BN
Characteristic
MIN
Test Conditions
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
1530
1800
Coss
Output Capacitance
VDS = 25V
230
325
Crss
Reverse Transfer Capacitance
f = 1 MHz
80
120
Qg
Total Gate Charge
Qgs
3
VGS = 10V
66
105
VDD = 0.5 VDSS
6.5
10
ID = ID [Cont.] @ 25°C
36
54
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
14
28
VDD = 0.5 VDSS
13
26
ID = ID [Cont.] @ 25°C
55
82
RG = 1.8Ω
19
37
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
Continuous Source Current
(Body Diode)
IS
ISM
Pulsed Source Current
(Body Diode)
1
VSD
Diode Forward Voltage
2
MIN
APT1001R6BN
8
APT1002R4BN
6.5
APT1001R6BN
32
APT1002R4BN
26
(VGS = 0V, IS = -ID [Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
450
910
ns
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
2.5
5
µC
TYP
MAX
UNIT
SAFE OPERATING AREA CHARACTERISTICS
Symbol
Characteristic
Test Conditions / Part Number
MIN
SOA1
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
240
SOA2
Safe Operating Area
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
240
ILM
Inductive Current Clamped
APT1001R6BN
32
APT1002R4BN
26
Watts
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
0.5
D=0.5
0.2
0.1
0.1
0.01
0.05
0.02
Note:
0.01
PDM
0.05
050-0109 Rev B
0.005
SINGLE PULSE
t1
t2
Duty Factor D = t1/t
2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT1001R6BN
8
8
ID, DRAIN CURRENT (AMPERES)
6
5V
4
2
4.5V
4V
0
4
TJ =+125°C
TJ =+25°C
TJ =-55°C
0
0
4
2
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
8
6
4
2
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
8
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
TJ =+125°C
VDS> I D (ON) x RDS (ON)MAX.
230µ SEC. PULSE TEST
12
TJ =+25°C
5.5V
5V
4
2
4.5V
4V
0
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.5
T = 25°C
J
2µ SEC. PULSE TEST
NORMALIZED TO
V
= 10V @ 0.5 I [Cont.]
2.0
GS
D
VGS =10V
1.5
VGS =20V
1.0
0.5
0.0
0
20
4
12
16
8
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
TJ =-55°C
6
0
0
100
400
200
300
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
16
VGS =10V
6V
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-0109 Rev B
ID, DRAIN CURRENT (AMPERES)
VGS =5.5, 6 & 10V
APT1001R6BN
10,000
10µS
OPERATION HERE
LIMITED BY R
(ON)
DS
100µS
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
40
1mS
10mS
1
100mS
TC =+25°C
T J =+150°C
SINGLE PULSE
C iss
1,000
C oss
100
Crss
DC
APT1001R6BN
.1
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5 10
50 100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
VDS=100V
16
VDS=200V
12
VDS =500V
8
4
0
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
20
TJ =+150°C
TJ =+25°C
10
5
2
1
0
.5
1.0
1.5
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
050-0109 Rev B
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)