D
TO-247
G
S
POWER MOS IV
®
APT6030BN 600V
23.0A 0.30Ω
APT6033BN 600V
22.0A 0.33Ω
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT
6030BN
APT
6033BN
UNIT
600
600
Volts
23
22
92
88
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
360
Watts
Linear Derating Factor
2.9
W/°C
PD
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
On State Drain Current
APT6030BN
600
APT6033BN
600
APT6030BN
23
APT6033BN
22
TYP
MAX
UNIT
Volts
2
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
MIN
2
Amps
APT6030BN
0.30
APT6033BN
0.33
Ohms
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, ID = 1.0mA)
2
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.34
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-6008 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6030/6033BN
Characteristic
MIN
Test Conditions
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
2905
3500
Coss
Output Capacitance
VDS = 25V
505
710
Crss
Reverse Transfer Capacitance
f = 1 MHz
190
285
Qg
Total Gate Charge
Qgs
3
VGS = 10V
140
210
VDD = 0.5 VDSS
18
27
ID = ID [Cont.] @ 25°C
75
110
40
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
20
VDD = 0.5 VDSS
35
70
ID = ID [Cont.] @ 25°C
90
130
RG = 1.8Ω
50
100
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
Continuous Source Current
(Body Diode)
IS
ISM
Pulsed Source Current
(Body Diode)
1
VSD
Diode Forward Voltage
2
MIN
APT6030BN
23
APT6033BN
22
APT6030BN
92
APT6033BN
88
(VGS = 0V, IS = -ID [Cont.])
1.3
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
UNIT
Amps
Volts
480
960
ns
8
16
µC
TYP
MAX
UNIT
SAFE OPERATING AREA CHARACTERISTICS
Symbol
Characteristic
Test Conditions / Part Number
MIN
SOA1
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
360
SOA2
Safe Operating Area
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
360
ILM
Inductive Current Clamped
APT6030BN
92
APT6033BN
88
Watts
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.02
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-6008 Rev B
0.5
0.005
t1
t2
SINGLE PULSE
0.001
10-5
10-4
Duty Factor D = t1/t
2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT6030/6033BN
20
20
6.5V
ID, DRAIN CURRENT (AMPERES)
16
12
6V
8
5.5V
4
5V
16
8
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
24
20
APT6030BN
16
APT6033BN
12
8
4
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
24
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
32
TJ = +25°C
7V
12
6V
8
5.5V
4
5V
2.50
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 I [Cont.]
2.00
GS
1.50
VGS=10V
VGS=20V
1.00
0.50
D
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
6.5V
8V
16
4.5V
0
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
4.5V
0
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
40
VGS=10V
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-6008 Rev B
ID, DRAIN CURRENT (AMPERES)
VGS=7, 8, &10V
APT6033BN
10µS
10,000
100µS
5,000
OPERATION HERE
LIMITED BY RDS (ON)
APT6030BN
APT6033BN
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
APT6030/6033BN
APT6030BN
100
1mS
10mS
100mS
1
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
I = I [Cont.]
D
VDS=120V
VDS=300V
12
VDS=480V
8
4
0
Coss
500
100
1
5 10
50 100
500 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
1,000
Crss
.1
D
Ciss
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
20
TJ =+25°C
10
5
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
050-6008 Rev B
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)