AGILENT ATF35143

Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-35143
Features
• Low Noise Figure
Surface Mount Package
SOT-343
Description
Agilent’s ATF-35143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Based on its featured performance, ATF-35143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requiring super low noise figure with
good intercept in the 450␣ MHz to
10 GHz frequency range.
Pin Connections and
Package Marking
1.9 GHz; 2 V, 15 mA (Typ.)
DRAIN
• 0.4 dB Noise Figure
• 18 dB Associated Gain
• 11 dBm Output Power at
1␣ dB Gain Compression
rd
• 21 dBm Output 3 Order
Intercept
SOURCE
5Px
Specifications
SOURCE
GATE
Note: Top View. Package marking
provides orientation and identification.
“5P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-33143. The typical specifications for these devices at 2␣ GHz
are shown in the table below:
Applications
• Low Noise Amplifier for
Cellular/PCS Handsets
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
Part No.
Gate Width
Bias Point
NF (dB) Ga (dB) OIP3 (dBm)
ATF-33143
1600 µ
4 V, 80 mA
0.5
15.0
33.5
ATF-34143
800 µ
4 V, 60 mA
0.5
17.5
31.5
ATF-35143
400 µ
2 V, 15 mA
0.4
18.0
21.0
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
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ATF-35143 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
Pdiss
Pin max
TCH
TSTG
θjc
Parameter
Drain - Source Voltage [2]
Gate - Source Voltage [2]
Gate Drain Voltage [2]
Drain Current [2]
Total Power Dissipation [4]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance [5]
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0 V
4. Source lead temperature is 25°C.
Derate 3.2␣ mW/ °C for TL > 67°C.
5. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Absolute
Maximum
5.5
-5
-5
Idss[3]
300
14
160
-65 to 160
310
Units
V
V
V
mA
mW
dBm
°C
°C
°C/W
Product Consistency Distribution Charts [7, 8]
120
120
+0.6 V
100
100
80
80
IDS (mA)
Cpk = 1.73
Std = 0.35
0V
-3 Std
+3 Std
60
60
40
40
–0.6 V
20
20
0
19
0
0
2
4
VDS (V)
6
8
20
21
22
23
24
OIP3 (dBm)
Figure 1. Typical Pulsed I-V Curves [6].
(VGS = -0.2 V per step)
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
200
160
Cpk = 3.7
Std = 0.03
Cpk = 2.75
Std = 0.17
160
120
120
-3 Std
+3 Std
-3 Std
+3 Std
80
80
40
40
0
0.2
0.3
0.4
0.5
0.6
0.7
0
16
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
Notes:
6. Under large signal conditions, VGS may
swing positive and the drain current may
exceed Idss. These conditions are
acceptable as long as the maximum Pdiss
and Pin max ratings are not exceeded.
17
18
19
20
GAIN (dB)
NF (dB)
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been deembedded from actual measurements.
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ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Idss [1]
VP [1]
Id
gm[1]
IGDO
Igss
NF
Ga
OIP3
P1dB
Parameters and Test Conditions
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
Quiescent Bias Current
VGS = 0.45 V, VDS = 2 V
Transconductance
VDS = 1.5 V, gm = Idss /VP
Gate to Drain Leakage Current
VGD = 5 V
Gate Leakage Current
VGD = VGS = -4 V
f = 2 GHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
Noise Figure[3]
f = 900 MHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
f = 2 GHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
Associated Gain[3]
f = 900 MHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
f = 2 GHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
rd
Output 3 Order
[4,
5]
Intercept Point
f = 900 MHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
f = 2 GHz VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
1 dB Compressed
Intercept Point [4]
f = 900 MHz VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
Units
mA
V
mA
mmho
µA
µA
dB
Min. Typ.[2]
40
65
-0.65
-0.5
—
15
90
120
—
dB
dB
16.5
14
dB
dBm
dBm
dBm
dBm
19
10
0.4
0.5
0.3
0.4
18
16
20
18
21
14
19
14
10
8
9
9
Max.
80
-0.35
—
—
250
150
0.7
0.9
19.5
18
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2 V 5 mA min/max data guaranteed via the 2 V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
(0.4 dB loss)
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
DUT
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
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ATF-35143 Typical Performance Curves
30
30
OIP3
25
OIP3, P 1dB (dBm)
20
15
P1dB
10
P1dB
15
2V
3V
4V
10
2V
3V
4V
5
OIP3
20
5
0
0
10
20
30
40
50
0
60
10
20
20
2.5
50
60
24
2.5
2V
3V
4V
22
18
1.5
20
1.5
17
1
18
1
Ga (dB)
2
Ga
NF (dB)
Ga (dB)
2V
3V
4V
Ga
NF
15
0
10
20
30
2
NF
16
40
50
0.5
16
0
14
60
0.5
0
0
10
20
IDSQ (mA)
30
40
50
60
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2GHz. [1]
Figure 9. NF and Ga vs. Bias at
900MHz. [1]
25
20
20
15
15
P1dB (dBm)
P1dB (dBm)
40
Figure 7. OIP3 and P1dB vs. Bias at
900MHz. [1,2]
Figure 6. OIP3 and P1dB vs. Bias at
2GHz. [1,2]
19
30
IDSQ (mA)
IDSQ (mA)
NF (dB)
OIP3, P 1dB (dBm)
25
10
10
5
5
2V
3V
4V
0
2V
3V
4V
0
-5
-5
0
20
40
60
80
0
20
IDS (mA)
40
60
80
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
[1]
Figure 11. P1dB vs. Bias (Active Bias)
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15␣ mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ␣ =␣ 5␣ mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
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ATF-35143 Typical Performance Curves, continued
25
1.50
5 mA
15 mA
30 mA
1.25
20
Fmin (dB)
Fmin (dB)
1.00
0.75
15
0.50
10
5 mA
15 mA
30 mA
0.25
5
0
2
4
6
8
0
10
2
20
0.8
0.6
18
25°C
-40°C
85°C
0.4
0
12
4
6
20
15
25°C
-40°C
85°C
5
0
8
2
20
2
15
1.5
10
1
P1dB
OIP3
Gain
NF
20
40
60
0.5
0
80
OIP3, P 1dB (dBm), Gain (dB)
2.5
NF (dB)
OIP3, P 1dB (dBm), Gain (dB)
25
0
6
8
Figure 15. OIP3 and P1dB vs. Frequency
and Temperature [1,2], VDS = 2V, I DS =15mA.
Figure 14. Fmin and Ga vs. Frequency
and Temperature, V DS =2V, I DS =15 mA.
0
4
FREQUENCY (GHz)
FREQUENCY (GHz)
5
10
10
0.2
14
2
8
25
OIP3, P 1dB (dBm)
1.0
NF (dB)
Ga (dB)
22
0
6
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
Figure 12. Fmin vs. Frequency and
Current at 2V.
16
4
FREQUENCY (GHz)
FREQUENCY (GHz)
25
3
20
2.5
15
2
10
1.5
1
5
P1dB
OIP3
Gain
NF
0
-5
0
20
40
60
0.5
0
80
IDS (mA)
IDS (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2V, 3.9 GHz).
NF (dB)
0
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is
running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V
and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
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ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.98
0.97
0.94
0.91
0.90
0.85
0.81
0.72
0.66
0.62
0.60
0.60
0.62
0.66
0.70
0.72
0.74
0.76
0.82
0.82
0.84
0.86
S11
Ang.
-16.90
-26.37
-34.76
-50.59
-58.26
-65.74
-80.62
-95.48
-125.99
-156.09
174.97
145.61
118.39
93.15
71.31
50.91
31.04
11.26
-3.08
-14.26
-26.64
-38.94
-54.78
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
13.34
13.29
13.16
12.83
12.66
12.44
12.04
11.61
10.71
9.79
8.93
8.06
7.20
6.26
5.43
4.58
3.64
2.56
1.45
0.43
-0.72
-1.83
-3.02
4.64
4.62
4.55
4.38
4.30
4.19
4.00
3.81
3.43
3.09
2.80
2.53
2.29
2.06
1.87
1.69
1.52
1.34
1.18
1.05
0.92
0.81
0.71
166.04
157.78
150.72
137.02
130.38
123.90
111.27
99.08
75.75
53.63
32.77
12.43
-7.12
-26.14
-44.14
-62.85
-81.42
-99.46
-115.94
-132.24
-149.24
-164.44
179.28
-31.70
-28.18
-25.85
-22.73
-21.62
-20.72
-19.33
-18.27
-17.08
-16.48
-16.14
-16.08
-16.31
-16.59
-16.89
-17.14
-17.52
-18.13
-18.79
-19.25
-19.58
-19.74
-20.18
0.026
0.039
0.051
0.073
0.083
0.092
0.108
0.122
0.140
0.150
0.156
0.157
0.153
0.148
0.143
0.139
0.133
0.124
0.115
0.109
0.105
0.103
0.098
77.91
71.12
65.76
54.85
49.69
44.45
34.61
25.21
6.95
-9.83
-25.73
-41.00
-54.14
-67.05
-78.09
-88.99
-100.38
-111.06
-119.00
-127.12
-135.42
-143.49
-152.36
0.73
0.72
0.71
0.68
0.67
0.65
0.62
0.59
0.52
0.45
0.38
0.31
0.25
0.20
0.16
0.14
0.17
0.22
0.28
0.34
0.42
0.49
0.56
-12.47
-17.53
-23.33
-34.88
-40.49
-46.03
-56.68
-66.71
-85.11
-102.71
-120.16
-138.01
-157.10
-178.27
157.62
121.82
82.33
53.17
27.32
6.01
-10.69
-22.32
-35.90
22.52
20.83
19.50
17.78
17.13
16.58
15.69
14.94
13.89
13.13
12.53
12.07
11.75
11.19
9.63
8.81
7.87
6.79
5.86
5.89
4.84
4.62
4.04
ATF-35143 Typical Noise Parameters
Γopt
Mag.
0.91
0.87
0.86
0.81
0.78
0.76
0.71
0.66
0.58
0.52
0.47
0.43
0.41
0.40
0.41
Ang.
6.4
15.0
17.2
28.0
33.4
38.8
50.0
61.9
87.2
114.4
143.2
173.5
-155.2
-122.9
-90.1
Rn/50
0.22
0.22
0.22
0.22
0.21
0.21
0.19
0.17
0.13
0.09
0.06
0.05
0.07
0.13
0.24
Ga
dB
19.3
17.9
17.5
16.3
15.8
15.4
14.7
14.0
12.7
11.5
10.4
9.5
8.7
8.0
7.5
25
MSG/MAG and S 21 (dB)
VDS = 2 V, IDS = 5 mA
Freq.
Fmin
GHz
dB
0.5
0.10
0.9
0.12
1.0
0.14
1.5
0.20
1.8
0.23
2.0
0.27
2.5
0.33
3.0
0.39
4.0
0.52
5.0
0.64
6.0
0.77
7.0
0.89
8.0
1.02
9.0
1.14
10.0
1.27
20
MSG
15
10
S21
MAG
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 18. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 5 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
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ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.97
0.95
0.91
0.89
0.86
0.81
0.76
0.66
0.61
0.58
0.57
0.58
0.61
0.65
0.69
0.72
0.74
0.77
0.82
0.82
0.84
0.86
S11
Ang.
-18.75
-29.11
-38.28
-55.52
-63.78
-71.82
-87.59
-103.22
-134.81
-165.34
165.88
137.00
110.78
86.75
66.25
46.88
27.76
8.62
-5.28
-16.03
-28.32
-40.43
-56.14
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
15.89
15.79
15.61
15.17
14.92
14.65
14.11
13.54
12.40
11.29
10.27
9.27
8.33
7.32
6.44
5.54
4.56
3.45
2.33
1.29
0.19
-0.87
-1.99
6.23
6.16
6.03
5.73
5.57
5.40
5.08
4.76
4.17
3.67
3.26
2.91
2.61
2.32
2.10
1.89
1.69
1.49
1.31
1.16
1.02
0.91
0.80
164.76
155.98
148.42
133.92
127.01
120.27
107.36
95.04
71.95
50.43
30.28
10.68
-8.09
-26.38
-43.90
-61.97
-79.90
-97.18
-112.92
-128.66
-144.87
-159.49
-175.19
-32.40
-28.87
-26.56
-23.61
-22.62
-21.72
-20.35
-19.41
-18.27
-17.65
-17.33
-17.14
-17.14
-17.20
-17.20
-17.27
-17.39
-17.79
-18.20
-18.56
-18.79
-18.79
-19.33
0.024
0.036
0.047
0.066
0.074
0.082
0.096
0.107
0.122
0.131
0.136
0.139
0.139
0.138
0.138
0.137
0.135
0.129
0.123
0.118
0.115
0.115
0.108
77.63
70.58
64.88
54.16
49.11
44.08
34.60
25.71
9.04
-5.97
-20.15
-33.84
-45.60
-57.65
-68.22
-79.30
-90.87
-102.19
-110.80
-120.09
-129.92
-139.60
-149.17
0.63
0.61
0.60
0.57
0.56
0.54
0.51
0.47
0.41
0.34
0.27
0.21
0.17
0.13
0.11
0.14
0.19
0.26
0.33
0.39
0.45
0.51
0.57
-14.09
-19.69
-26.10
-38.73
-44.79
-50.70
-61.95
-72.47
-91.47
-110.05
-129.24
-150.49
-174.77
154.01
118.18
78.36
49.57
29.95
9.45
-7.98
-22.30
-32.23
-44.43
24.14
22.30
21.08
19.39
18.75
18.19
17.23
16.48
15.34
14.47
13.80
13.21
12.73
10.69
9.85
9.16
8.34
7.35
6.51
6.51
5.48
5.24
4.72
ATF-35143 Typical Noise Parameters
Rn/50
0.15
0.15
0.15
0.15
0.15
0.14
0.14
0.12
0.12
0.08
0.05
0.05
0.07
0.12
0.22
Ga
dB
20.5
19.0
18.6
17.5
16.9
16.4
15.7
15.0
13.6
12.4
11.3
10.3
9.5
8.8
8.3
30
25
MSG/MAG and S 21 (dB)
VDS = 2 V, IDS = 10 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.10
0.88
5.0
0.9
0.11
0.84
14.0
1.0
0.12
0.83
16.0
1.5
0.17
0.77
26.0
1.8
0.20
0.74
31.9
2.0
0.23
0.71
37.3
2.5
0.29
0.66
48.6
3.0
0.34
0.60
60.6
4.0
0.46
0.52
86.8
5.0
0.58
0.45
115.3
6.0
0.69
0.40
145.8
7.0
0.81
0.37
177.7
8.0
0.92
0.35
-149.3
9.0
1.04
0.35
-115.6
10.0
1.16
0.37
-81.8
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 10 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
7
88759/05-4.PM6.5J
Page 7
2001.04.26, 9:16 AM Adobe PageMaker 6.5J/PPC
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.97
0.95
0.90
0.87
0.84
0.79
0.73
0.64
0.59
0.56
0.56
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.84
0.86
S11
Ang.
-19.75
-30.58
-40.15
-58.08
-66.65
-74.93
-91.13
-107.08
-139.07
-169.70
161.74
133.19
107.56
84.16
64.19
45.46
26.66
7.70
-5.93
-16.54
-28.76
-40.79
-56.40
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
17.02
16.90
16.69
16.18
15.90
15.59
14.97
14.34
13.09
11.90
10.81
9.77
8.78
7.75
6.86
5.93
4.93
3.80
2.68
1.63
0.54
-0.49
-1.60
7.10
7.00
6.83
6.44
6.23
6.02
5.61
5.21
4.51
3.93
3.47
3.08
2.75
2.44
2.20
1.98
1.76
1.55
1.36
1.21
1.06
0.95
0.83
164.04
154.98
147.18
132.28
125.22
118.41
105.38
93.08
70.17
49.03
29.27
10.04
-8.35
-26.29
-43.56
-61.33
-78.94
-95.93
-111.53
-126.76
-142.70
-157.02
-172.47
-32.77
-29.37
-27.13
-24.15
-23.10
-22.27
-20.92
-20.00
-18.94
-18.27
-17.79
-17.59
-17.46
-17.39
-17.33
-17.27
-17.27
-17.59
-17.92
-18.20
-18.49
-18.49
-18.94
0.023
0.034
0.044
0.062
0.070
0.077
0.090
0.100
0.113
0.122
0.129
0.132
0.134
0.135
0.136
0.137
0.137
0.132
0.127
0.123
0.119
0.119
0.113
77.60
70.54
64.80
54.23
49.25
44.36
35.36
26.85
11.15
-2.96
-16.43
-29.47
-40.80
-52.63
-63.33
-74.77
-86.46
-98.11
-107.51
-117.16
-127.03
-137.06
-147.50
0.57
0.55
0.54
0.51
0.49
0.48
0.44
0.41
0.35
0.29
0.23
0.17
0.14
0.11
0.12
0.16
0.22
0.29
0.36
0.41
0.47
0.53
0.58
-14.99
-20.86
-27.61
-40.74
-46.95
-53.06
-64.59
-75.32
-94.59
-113.89
-134.46
-158.65
172.14
134.01
95.85
63.20
40.01
23.11
3.55
-12.09
-26.21
-35.57
-47.29
24.89
23.05
21.91
20.17
19.53
18.93
17.95
17.17
16.01
15.09
14.30
13.68
12.29
10.74
9.99
9.34
8.57
7.62
6.79
6.76
5.81
5.55
5.06
ATF-35143 Typical Noise Parameters
Rn/50
0.19
0.17
0.16
0.15
0.15
0.14
0.12
0.07
0.13
0.07
0.05
0.05
0.07
0.13
0.23
Ga
dB
20.9
19.4
19.2
17.9
17.3
17.0
16.2
15.4
14.1
12.8
11.7
10.8
9.9
9.2
8.6
30
25
MSG/MAG and S 21 (dB)
VDS = 2 V, IDS = 15 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.10
0.88
4.5
0.9
0.13
0.83
13.1
1.0
0.14
0.82
15.3
1.5
0.19
0.76
26.1
1.8
0.22
0.72
32.6
2.0
0.23
0.70
36.9
2.5
0.29
0.64
48.5
3.0
0.34
0.58
60.9
4.0
0.45
0.49
87.9
5.0
0.56
0.42
117.4
6.0
0.67
0.37
149.0
7.0
0.79
0.34
-178.1
8.0
0.90
0.33
-144.3
9.0
1.01
0.34
-110.2
10.0
1.12
0.36
-76.3
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 20. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 15 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
8
88759/05-4.PM6.5J
Page 8
2001.04.26, 9:16 AM Adobe PageMaker 6.5J/PPC
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.55
0.55
0.56
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.83
0.85
0.87
S11
Ang.
-20.95
-32.34
-42.36
-61.09
-69.98
-78.53
-95.14
-111.48
-143.89
-174.55
157.19
129.18
104.19
81.48
62.07
43.83
25.46
6.81
-6.74
-17.21
-29.31
-41.30
-56.87
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
18.17
18.02
17.77
17.18
16.85
16.50
15.81
15.11
13.73
12.46
11.31
10.22
9.20
8.15
7.24
6.29
5.27
4.14
3.01
1.94
0.87
-0.15
-1.24
8.10
7.96
7.73
7.22
6.96
6.69
6.17
5.69
4.86
4.20
3.68
3.24
2.88
2.56
2.30
2.06
1.84
1.61
1.41
1.25
1.11
0.98
0.87
163.18
153.79
145.67
130.36
123.20
116.28
103.17
90.88
68.24
47.48
28.10
9.28
-8.75
-26.37
-43.37
-60.90
-78.22
-94.88
-110.07
-125.15
-140.80
-154.83
-170.03
-33.56
-30.17
-27.96
-25.04
-24.01
-23.22
-21.94
-21.01
-19.83
-19.02
-18.49
-18.13
-17.79
-17.59
-17.33
-17.20
-17.14
-17.33
-17.65
-17.86
-18.06
-18.13
-18.56
0.021
0.031
0.040
0.056
0.063
0.069
0.080
0.089
0.102
0.112
0.119
0.124
0.129
0.132
0.136
0.138
0.139
0.136
0.131
0.128
0.125
0.124
0.118
77.39
70.55
65.08
54.79
50.12
45.58
37.15
29.29
14.76
1.63
-10.98
-23.67
-34.72
-46.33
-57.43
-68.78
-81.32
-93.11
-103.06
-112.88
-123.55
-134.43
-144.88
0.49
0.47
0.46
0.43
0.41
0.39
0.36
0.34
0.28
0.23
0.17
0.13
0.11
0.11
0.13
0.18
0.24
0.31
0.38
0.43
0.49
0.54
0.60
-15.99
-22.00
-29.03
-42.64
-48.96
-55.19
-66.91
-77.74
-97.29
-117.24
-139.78
-169.09
155.22
112.23
77.30
51.74
32.67
17.81
0.45
-15.44
-29.37
-38.55
-49.70
25.87
24.10
22.86
21.11
20.42
19.86
18.87
18.06
16.78
15.74
14.90
14.17
11.98
10.82
10.15
9.51
8.77
7.87
7.08
7.06
6.13
5.89
5.39
ATF-35143 Typical Noise Parameters
Rn/50
0.18
0.17
0.16
0.15
0.15
0.14
0.13
0.12
0.10
0.07
0.05
0.06
0.10
0.18
0.30
Ga
dB
21.6
20.2
19.9
18.7
18.0
17.7
17.0
16.2
14.8
13.5
12.4
11.4
10.5
9.7
9.1
30
25
MSG/MAG and S 21 (dB)
VDS = 2 V, IDS = 30 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.11
0.87
2.7
0.9
0.15
0.81
12.1
1.0
0.16
0.80
14.5
1.5
0.22
0.73
26.3
1.8
0.25
0.69
33.4
2.0
0.27
0.66
38.1
2.5
0.33
0.60
50.6
3.0
0.39
0.54
64.2
4.0
0.52
0.45
94.0
5.0
0.64
0.39
126.5
6.0
0.77
0.34
160.6
7.0
0.90
0.33
-164.7
8.0
1.02
0.33
-130.3
9.0
1.15
0.36
-97.5
10.0
1.28
0.40
-67.0
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
9
88759/05-4.PM6.5J
Page 9
2001.04.26, 9:16 AM Adobe PageMaker 6.5J/PPC
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.97
0.95
0.91
0.88
0.86
0.81
0.75
0.66
0.60
0.58
0.56
0.57
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.84
0.86
S11
Ang.
-18.76
-29.12
-38.28
-55.52
-63.78
-71.79
-87.55
-103.15
-134.65
-165.16
166.12
137.25
111.11
87.10
66.58
47.31
28.18
9.02
-4.82
-15.65
-28.00
-40.11
-55.87
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
16.07
15.97
15.79
15.34
15.09
14.82
14.27
13.71
12.56
11.45
10.43
9.44
8.51
7.51
6.64
5.76
4.81
3.71
2.61
1.60
0.51
-0.55
-1.68
6.36
6.29
6.16
5.85
5.68
5.51
5.17
4.85
4.25
3.74
3.32
2.97
2.66
2.38
2.15
1.94
1.74
1.53
1.35
1.20
1.06
0.94
0.82
164.73
155.93
148.37
133.87
126.95
120.22
107.29
95.00
71.95
50.50
30.44
10.91
-7.80
-26.05
-43.52
-61.59
-79.58
-96.96
-112.95
-128.77
-145.23
-160.01
-176.05
-32.77
-29.37
-27.13
-24.01
-22.97
-22.05
-20.82
-19.83
-18.71
-18.13
-17.79
-17.65
-17.59
-17.65
-17.65
-17.65
-17.72
-17.99
-18.34
-18.56
-18.71
-18.71
-19.25
0.023
0.034
0.044
0.063
0.071
0.079
0.091
0.102
0.116
0.124
0.129
0.131
0.132
0.131
0.131
0.131
0.130
0.126
0.121
0.118
0.116
0.116
0.109
76.79
70.22
64.53
54.04
49.13
44.06
34.85
25.98
9.56
-5.10
-19.00
-32.32
-43.61
-55.14
-65.42
-76.27
-87.47
-98.60
-107.41
-116.63
-126.02
-136.14
-146.13
0.65
0.63
0.62
0.59
0.57
0.56
0.52
0.49
0.42
0.35
0.29
0.23
0.18
0.13
0.10
0.11
0.16
0.23
0.29
0.35
0.42
0.49
0.55
-13.67
-19.08
-25.28
-37.48
-43.28
-49.01
-59.84
-69.88
-87.88
-105.14
-122.61
-141.22
-162.07
172.01
139.11
93.44
57.88
35.32
13.11
-4.62
-19.61
-29.62
-41.92
24.42
22.70
21.46
19.68
19.00
18.43
17.55
16.77
15.63
14.79
14.11
13.55
12.81
10.75
9.98
9.32
8.54
7.59
6.76
6.79
5.79
5.54
5.05
ATF-35143 Typical Noise Parameters
Rn/50
0.21
0.19
0.19
0.17
0.16
0.16
0.14
0.13
0.10
0.08
0.05
0.05
0.07
0.12
0.21
Ga
dB
20.0
19.0
18.8
17.8
17.2
16.7
15.9
15.1
13.7
12.5
11.4
10.4
9.6
8.9
8.4
30
25
MSG/MAG and S 21 (dB)
VDS = 3 V, IDS = 10 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.12
0.87
4.7
0.9
0.16
0.82
13.2
1.0
0.17
0.81
15.3
1.5
0.22
0.75
25.9
1.8
0.26
0.71
32.3
2.0
0.28
0.68
36.5
2.5
0.33
0.62
47.7
3.0
0.39
0.57
59.6
4.0
0.49
0.49
85.4
5.0
0.60
0.43
113.6
6.0
0.71
0.38
143.7
7.0
0.81
0.36
175.6
8.0
0.92
0.34
-151.3
9.0
1.03
0.34
-117.3
10.0
1.13
0.35
-82.7
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 22. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 10 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
10
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2001.04.26, 9:16 AM Adobe PageMaker 6.5J/PPC
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.90
0.87
0.84
0.78
0.73
0.63
0.58
0.56
0.55
0.56
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.85
0.86
S11
Ang.
-19.76
-30.58
-40.14
-58.04
-66.61
-74.88
-91.02
-106.95
-138.86
-169.42
162.05
133.54
107.88
84.56
64.57
45.84
27.11
8.18
-5.58
-16.18
-28.41
-40.49
-56.20
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
17.20
17.08
16.86
16.35
16.06
15.75
15.13
14.50
13.24
12.05
10.97
9.93
8.96
7.95
7.06
6.16
5.19
4.09
2.98
1.96
0.88
-0.15
-1.25
7.24
7.14
6.97
6.57
6.35
6.13
5.71
5.31
4.59
4.00
3.53
3.14
2.81
2.50
2.26
2.03
1.82
1.60
1.41
1.25
1.11
0.98
0.87
164.03
154.94
147.12
132.22
125.16
118.36
105.32
93.02
70.17
49.09
29.39
10.23
-8.11
-26.04
-43.28
-61.06
-78.75
-95.88
-111.57
-127.09
-143.31
-157.87
-173.65
-33.15
-29.90
-27.54
-24.58
-23.48
-22.62
-21.41
-20.45
-19.41
-18.79
-18.34
-18.06
-17.92
-17.86
-17.72
-17.59
-17.59
-17.79
-18.06
-18.27
-18.42
-18.49
-18.86
0.022
0.032
0.042
0.059
0.067
0.074
0.085
0.102
0.107
0.115
0.121
0.125
0.127
0.128
0.130
0.132
0.132
0.129
0.125
0.122
0.120
0.119
0.114
76.95
69.88
64.59
54.00
49.23
44.39
35.29
27.00
11.47
-2.18
-15.36
-27.97
-38.89
-50.41
-60.57
-71.45
-83.32
-94.36
-103.78
-113.43
-123.35
-134.06
-144.46
0.60
0.58
0.57
0.54
0.52
0.50
0.47
0.44
0.37
0.31
0.24
0.19
0.14
0.11
0.09
0.12
0.18
0.25
0.31
0.37
0.44
0.50
0.56
-14.39
-20.00
-26.48
-39.05
-45.00
-50.83
-61.71
-71.87
-89.81
-107.23
-125.21
-145.42
-168.81
158.79
118.59
75.36
46.94
27.91
7.94
-8.87
-23.42
-32.96
-44.64
25.17
23.47
22.20
20.47
19.78
19.19
18.27
17.47
16.32
15.42
14.66
14.00
12.23
10.87
10.16
9.55
8.80
7.86
7.09
7.04
6.09
5.87
5.41
ATF-35143 Typical Noise Parameters
Rn/50
0.17
0.16
0.16
0.15
0.14
0.20
0.17
0.15
0.11
0.07
0.05
0.05
0.07
0.13
0.22
Ga
dB
21.2
19.9
19.6
18.2
17.6
17.2
16.3
15.6
14.2
12.9
11.8
10.8
10.0
9.3
8.8
30
25
MSG/MAG and S 21 (dB)
VDS = 3 V, IDS = 15 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.11
0.86
3.5
0.9
0.15
0.81
12.1
1.0
0.16
0.80
14.3
1.5
0.21
0.73
25.1
1.8
0.24
0.69
31.6
2.0
0.26
0.66
35.9
2.5
0.31
0.60
47.2
3.0
0.37
0.55
59.4
4.0
0.47
0.46
86.0
5.0
0.58
0.40
115.4
6.0
0.68
0.36
146.8
7.0
0.79
0.33
179.8
8.0
0.89
0.32
-146.1
9.0
1.00
0.32
-111.5
10.0
1.10
0.33
-76.8
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 15 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
11
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2001.04.26, 9:16 AM Adobe PageMaker 6.5J/PPC
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.93
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.54
0.54
0.55
0.59
0.63
0.67
0.71
0.74
0.77
0.82
0.82
0.85
0.87
S11
Ang.
-21.01
-32.39
-42.42
-61.18
-70.01
-78.57
-95.09
-111.30
-143.48
-174.00
157.98
130.06
105.20
82.53
63.18
44.96
26.64
7.94
-5.53
-16.02
-28.09
-40.02
-55.63
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
18.45
18.29
18.03
17.42
17.09
16.74
16.03
15.32
13.93
12.65
11.50
10.42
9.42
8.39
7.49
6.56
5.58
4.46
3.36
2.33
1.25
0.23
-0.85
8.36
8.21
7.97
7.43
7.15
6.87
6.33
5.83
4.97
4.29
3.76
3.32
2.96
2.63
2.37
2.13
1.90
1.67
1.47
1.31
1.16
1.03
0.91
163.08
153.62
145.49
130.11
122.91
116.00
102.87
90.60
68.04
47.37
28.09
9.32
-8.66
-26.26
-43.25
-60.82
-78.23
-95.07
-110.42
-125.79
-141.72
-156.00
-171.48
-33.98
-30.46
-28.40
-25.35
-24.44
-23.61
-22.38
-21.41
-20.26
-19.58
-19.02
-18.64
-18.34
-18.06
-17.79
-17.52
-17.46
-17.65
-17.86
-17.99
-18.06
-18.06
-18.49
0.020
0.030
0.038
0.054
0.060
0.066
0.076
0.085
0.097
0.105
0.112
0.117
0.121
0.125
0.129
0.133
0.134
0.131
0.128
0.126
0.125
0.125
0.119
76.89
69.94
64.80
54.32
49.77
45.15
36.87
29.08
14.96
2.38
-10.00
-22.21
-32.79
-44.11
-54.57
-66.16
-78.18
-89.74
-99.72
-109.60
-120.39
-131.03
-141.69
0.53
0.51
0.50
0.47
0.45
0.43
0.40
0.37
0.31
0.25
0.19
0.14
0.11
0.09
0.09
0.14
0.20
0.27
0.34
0.39
0.46
0.51
0.57
-15.23
-21.01
-27.72
-40.61
-46.56
-52.43
-63.37
-73.44
-91.21
-108.94
-128.04
-151.53
179.40
138.30
95.15
62.17
39.86
23.41
5.08
-11.42
-25.74
-35.29
-46.81
26.21
24.36
23.22
21.39
20.72
20.17
19.21
18.36
17.10
16.11
15.26
13.78
12.10
11.00
10.36
9.76
9.05
8.14
7.40
7.41
6.44
6.19
5.71
ATF-35143 Typical Noise Parameters
Rn/50
0.18
0.17
0.17
0.16
0.15
0.15
0.14
0.12
0.09
0.07
0.05
0.06
0.10
0.17
0.28
Ga
dB
21.6
20.5
20.2
18.9
18.3
17.9
17.0
16.3
14.9
13.6
12.4
11.4
10.6
9.9
9.3
30
25
MSG/MAG and S 21 (dB)
VDS = 3 V, IDS = 30 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.11
0.87
3.5
0.9
0.16
0.81
12.5
1.0
0.17
0.79
14.7
1.5
0.23
0.72
25.9
1.8
0.27
0.68
32.6
2.0
0.28
0.65
37.1
2.5
0.35
0.59
49.3
3.0
0.41
0.53
62.5
4.0
0.53
0.43
91.6
5.0
0.66
0.37
123.4
6.0
0.79
0.33
157.1
7.0
0.91
0.31
-168.3
8.0
1.04
0.31
-133.7
9.0
1.17
0.33
-100.0
10.0
1.29
0.38
-68.1
20
MSG
15
MAG
10
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
12
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Page 12
2001.04.26, 9:16 AM Adobe PageMaker 6.5J/PPC
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.71
0.62
0.57
0.55
0.55
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.85
0.86
S11
Ang.
-21.11
-32.57
-42.70
-61.55
-70.46
-79.07
-95.78
-112.14
-144.46
-174.93
157.13
129.56
104.96
82.47
63.23
45.01
26.69
8.00
-5.46
-16.18
-28.39
-40.51
-56.36
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
18.54
18.38
18.13
17.53
17.20
16.84
16.14
15.43
14.04
12.76
11.61
10.54
9.55
8.53
7.64
6.74
5.79
4.71
3.64
2.65
1.62
0.64
-0.44
8.45
8.30
8.07
7.53
7.24
6.95
6.41
5.91
5.03
4.34
3.81
3.37
3.00
2.67
2.41
2.17
1.95
1.72
1.52
1.36
1.21
1.08
0.95
163.20
153.72
145.56
130.19
123.00
116.04
102.91
90.63
68.03
47.35
28.07
9.35
-8.62
-26.19
-43.13
-60.63
-78.09
-95.00
-110.50
-126.04
-142.14
-156.61
-172.55
-33.98
-30.75
-28.64
-25.68
-24.58
-23.88
-22.62
-21.72
-20.72
-20.00
-19.49
-19.25
-18.94
-18.79
-18.49
-18.27
-18.13
-18.27
-18.42
-18.49
-18.49
-18.49
-18.86
0.020
0.029
0.037
0.052
0.059
0.064
0.074
0.082
0.092
0.100
0.106
0.109
0.113
0.115
0.119
0.122
0.124
0.122
0.120
0.119
0.119
0.119
0.114
77.63
70.15
64.68
53.94
49.29
44.64
36.30
28.32
13.98
1.12
-11.07
-23.07
-33.33
-44.34
-54.44
-65.68
-77.35
-88.59
-98.13
-108.03
-118.41
-129.54
-140.19
0.56
0.54
0.53
0.50
0.48
0.46
0.43
0.40
0.34
0.28
0.22
0.17
0.13
0.09
0.07
0.09
0.15
0.22
0.28
0.34
0.40
0.46
0.52
-14.66
-20.35
-26.91
-39.45
-45.29
-50.94
-61.54
-71.17
-87.95
-104.23
-120.69
-139.29
-160.54
169.67
128.74
78.47
47.96
28.53
8.38
-8.46
-22.93
-32.29
-43.97
26.26
24.55
23.38
21.61
20.90
20.36
19.38
18.58
17.38
16.38
15.55
14.19
12.47
11.33
10.70
10.10
9.40
8.47
7.69
7.76
6.75
6.53
6.00
ATF-35143 Typical Noise Parameters
Rn/50
0.22
0.21
0.20
0.18
0.17
0.17
0.15
0.14
0.10
0.07
0.05
0.06
0.09
0.15
0.26
Ga
dB
20.7
19.7
19.5
18.4
17.8
17.5
16.7
16.0
14.7
13.5
12.5
11.5
10.7
10.0
9.5
30
25
MSG/MAG and S 21 (dB)
VDS = 4 V, IDS = 30 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.10
0.90
3.5
0.9
0.14
0.85
12.5
1.0
0.16
0.83
14.7
1.5
0.21
0.77
25.9
1.8
0.25
0.73
32.6
2.0
0.28
0.70
37.1
2.5
0.33
0.64
49.1
3.0
0.38
0.58
62.0
4.0
0.49
0.48
90.3
5.0
0.62
0.40
121.2
6.0
0.74
0.35
154.0
7.0
0.87
0.32
-172.2
8.0
0.99
0.31
-138.0
9.0
1.11
0.34
-104.2
10.0
1.24
0.39
-71.6
MSG
20
15
MAG
10
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|2 vs.
Frequency at 4 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
13
88759/05-4.PM6.5J
Page 13
2001.04.26, 9:16 AM Adobe PageMaker 6.5J/PPC
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
GHz
Mag.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.57
0.55
0.55
0.57
0.60
0.64
0.69
0.72
0.75
0.78
0.83
0.84
0.87
0.88
S11
Ang.
-21.27
-32.77
-42.95
-61.92
-70.88
-79.55
-96.36
-112.86
-145.47
-176.15
155.85
128.25
103.61
81.11
62.01
43.90
25.78
7.31
-6.12
-16.62
-28.78
-40.91
-56.66
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
18.15
17.99
17.74
17.13
16.79
16.45
15.74
15.03
13.64
12.35
11.21
10.14
9.16
8.14
7.25
6.37
5.43
4.37
3.30
2.29
1.25
0.21
-0.92
8.09
7.94
7.71
7.19
6.91
6.64
6.12
5.64
4.81
4.15
3.64
3.21
2.87
2.55
2.30
2.08
1.87
1.65
1.46
1.30
1.16
1.03
0.90
163.09
153.59
145.40
129.98
122.76
115.80
102.60
90.26
67.52
46.76
27.45
8.68
-9.34
-27.02
-44.01
-61.57
-79.17
-96.36
-112.19
-127.94
-144.27
-159.19
-175.28
-34.89
-31.70
-29.37
-26.56
-25.51
-24.73
-23.48
-22.62
-21.51
-20.82
-20.26
-19.83
-19.41
-19.09
-18.71
-18.27
-17.92
-17.92
-17.92
-17.86
-17.79
-17.79
-17.99
0.018
0.026
0.034
0.047
0.053
0.058
0.067
0.074
0.084
0.091
0.097
0.102
0.107
0.111
0.116
0.122
0.127
0.127
0.127
0.128
0.129
0.129
0.126
77.28
70.40
65.05
55.14
50.40
46.34
38.10
30.61
17.18
5.47
-5.83
-17.10
-26.34
-36.93
-46.43
-57.09
-68.92
-80.43
-90.26
-100.79
-112.14
-123.71
-134.88
0.54
0.53
0.51
0.48
0.47
0.45
0.42
0.39
0.34
0.29
0.24
0.19
0.15
0.11
0.07
0.06
0.10
0.18
0.25
0.31
0.39
0.46
0.52
-13.50
-18.54
-24.50
-35.90
-41.17
-46.33
-55.86
-64.53
-79.32
-93.48
-107.07
-121.43
-137.04
-156.16
178.65
113.63
60.75
35.69
13.24
-4.12
-19.12
-28.89
-40.92
26.52
24.83
23.55
21.84
21.15
20.59
19.61
18.82
17.58
16.59
15.74
13.17
11.94
10.99
10.38
9.88
9.26
8.35
7.57
7.78
6.73
6.65
6.06
ATF-35143 Typical Noise Parameters
Rn/50
0.29
0.29
0.28
0.26
0.25
0.24
0.21
0.19
0.13
0.09
0.08
0.13
0.26
0.48
0.79
Ga
dB
22.5
21.3
21.0
19.8
19.2
18.8
17.8
17.0
15.5
14.1
12.9
11.9
11.0
10.3
9.8
30
25
MSG/MAG and S 21 (dB)
VDS = 4 V, IDS = 60 mA
Freq.
Fmin
Γopt
GHz
dB
Mag.
Ang.
0.5
0.22
0.84
4.4
0.9
0.30
0.78
15.6
1.0
0.32
0.77
18.4
1.5
0.42
0.70
32.4
1.8
0.48
0.65
40.8
2.0
0.52
0.63
46.4
2.5
0.63
0.56
61.0
3.0
0.73
0.51
76.6
4.0
0.94
0.44
109.9
5.0
1.15
0.40
144.8
6.0
1.35
0.39
-179.8
7.0
1.56
0.40
-145.5
8.0
1.77
0.43
-113.7
9.0
1.98
0.47
-85.6
10.0
2.18
0.53
-62.6
MSG
20
15
MAG
10
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 4 V, 60 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
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Noise Parameter
Applications Information
Fmin values at 2␣ GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is presented with an impedance
matching network that transforms the source impedance,
typically 50Ω, to an impedance
represented by the reflection
coefficient Γo. The designer must
design a matching network that
will present Γo to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
presented with Γo. If the reflection coefficient of the matching
network is other than Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo| 2) (1 – Γs| 2)
Where Rn /Zo is the normalized
noise resistance, Γo is the optimum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high impedance requires very hi-Q components in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q > 100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on amplifier noise figure is covered in
Agilent Application 1085.
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ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
L
R=0.1 OH
LOSSYL
L=Lb
R=Rb
SOURCE
L=Lb
R=Rb
L=Lc
C
L
LOSSYL
LOSSYL
GATE_IN
L=Lb
R=Rb
D
L=La *.5
C=Cb
C
C=Ca
G
S
L
SOURCE
DRAIN_OUT
L=Lb
R=Rb
L=La
L
LOSSYL
LOSSYL
L=Lb
R=Rb
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
L=Ld
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
ATF-35143 Die Model
* STATZ MESFET MODEL *
MODEL = FET
IDS model
Gate model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
Parasitics
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Breakdown
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Noise
FNC=01e+6
R=.17
P=.65
C=.2
M o d e l s c a l fa c t o r s ( W = F E T w i d t h i n m i c r o n s )
XX
D
E QUAT I O N C d s = 0 . 0 1 * W / 2 0 0
E QUAT I O N B e t a = 0 . 0 6 * W / 2 0 0
E QUAT I O N R d = 2 0 0 / W
NFETMESFET
G
XX
E QUAT I O N R s = . 5 * 2 0 0 / W
E QUAT I O N C g s = 0 . 2 * W / 2 0 0
E QUAT I O N C g d = 0 . 0 4 * W / 2 0 0
E QUAT I O N L g = 0 . 0 3 * 2 0 0 / W
S
XX
E QUAT I O N L d = 0 . 0 3 * 2 0 0 / W
E QUAT I O N L s = 0 . 0 1 * 2 0 0 / W
E QUAT I O N R c = 5 0 0 * 2 0 0 / W
MODEL=FET
S
W=400 µm
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Part Number Ordering Information
Part Number
ATF-35143-TR1
ATF-35143-TR2
ATF-35143-BLK
No. of
Devices
3000
10000
100
Container
7" Reel
13" Reel
antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
1.30 (.051) REF
1.15
2.00 ± 0.05
2.60 (.102)
1.30 (.051)
1.30 ± 0.02
0.60 TYP
1.15
0.85 (.033)
0.55 (.021) TYP
2.00 ± 0.05
1.15 (.045) REF
1.25 ± 0.02
0.375 TYP
0.90 ± 0.05
0.01
x.xx REF
0.29 ± 0.050
0.30 TYP
0.6°
0.13 TYP
DIMENSIONS ARE IN MILLIMETERS (INCHES)
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Device Orientation
REEL
END VIEW
TOP VIEW
4 mm
CARRIER
TAPE
8 mm
5PX
USER
FEED
DIRECTION
5PX
5PX
5PX
COVER TAPE
Tape Dimensions
For Outline 4T
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
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当社半導体部品のご使用にあたって
仕様及び仕様書に関して
・本仕様は製品改善および技術改良等により予告なく変更する場合があります。ご使用の際には最
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です。ご使用において第三者の知的財産権などの保証または実施権の許諾に対して問題が発生し
た場合、当社はその責任を負いかねます。
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お客様の責任において、装置の安全設計をお願いいたします。
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