18–23 GHz GaAs MMIC Power Amplifier AA022P1-00 Features Chip Outline ■ Single Bias Supply Operation (6 V) 1.700 ■ 14 dB Typical Small Signal Gain 1.613 ■ 24.5 dBm Typical P1 dB Output Power at 23 GHz ■ 0.25 µm Ti/Pd/Au Gates 1.371 0.329 0.086 3.400 2.784 0.520 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 0.000 ■ 100% On-Wafer RF and DC Testing Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where high power and gain are required. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 22 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 6 V) Parameter Condition Drain Current (at Saturation) Small Signal Gain Symbol Min. IDS F = 18–23 GHz G 12 Typ.2 Max. Unit 300 390 mA 14 dB Input Return Loss F = 18–23 GHz RLI -15 -10 Output Return Loss F = 18–23 GHz RLO -17 -10 Output Power at 1 dB Gain Compression F = 23 GHz P1 dB 22 24.5 dBm Saturated Output Power F = 23 GHz PSAT 24 25.5 dBm Gain at Saturation F = 23 GHz GSAT 13 dB ΘJC 39 °C/W Thermal Resistance1 dB dB 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 18–23 GHz GaAs MMIC Power Amplifier AA022P1-00 Typical Performance Data 26 20 25 S21 10 24 -10 POUT (dBm) (dB) 0 S11 -20 S22 PIN 16 14 12 23 22 10 21 20 8 19 18 -30 17 S12 16 -40 18 20 22 24 18 26 21 22 23 24 25 Frequency (GHz) Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 6 V) Output Characteristics as a Function of Frequency and Input Drive Level (VDS = 6 V) Bias Arrangement Circuit Schematic 6V 50 pF 50 pF .01 µF RF IN Detail A RF OUT VDS 50 pF 50 pF VDS 6V .01 µF RF IN SEE DETAIL A For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. RF OUT VDS 2 VDS Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A