Ka Band Power GaAs MESFET Chip AFM08P2-000 Features ■ 24 dBm Output Power @ 18 GHz 0.110 mm Gate 0.110 mm 0.395 mm ■ High Associated Gain, 8.5 dB @ 18 GHz Drain ■ High Power Added Efficiency, 20% ■ Broadband Operation, DC–40 GHz ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface 0.327 mm 0.655 mm ■ Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Description The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance. Absolute Maximum Ratings Characteristic Value Drain to Source Voltage (VDS) 6V Gate to Source Voltage (VGS) -4 V Drain Current (IDS) IDSS Gate Current (IGS) 2 mA Total Power Dissipation (PT) 1.4 W Storage Temperature (TST) -65 to +150°C Channel Temperature (TCH) 175°C Electrical Specifications at 25°C Parameter Test Conditions Min. Typ. Max. Unit 175.0 265.0 360.0 mA 120.0 160.0 Saturated Drain Current (IDSS) Transconductance (gm) VDS = 2 V, VGS = 0 V Pinch-off Voltage (VP) VDS = 5 V, IDS = 2.0 mA 1.0 3.0 Gate to Drain Breakdown Voltage (Vbgd) IGD = 800 µA 8.0 12.0 -V 24.0 dBm 8.5 dB Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) VDS = 5 V, IDS = 140 mA, F = 18 GHz Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) VDS = 5 V, IDS = 140 mA, F = 30 GHz Power Added Efficiency (ηadd) Thermal Resistance (ΘJC) mS 5.0 20.0 % 23.0 dBm 4.5 dB 10.0 TBASE = 25°C % 120.0 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A -V °C/W 1 Ka Band Power GaAs MESFET Chip AFM08P2-000 Typical Performance Data 300 lDS (mA) 240 Total Power Dissipation PT (W) VGS = 0 V -0.5 V 180 -1.0 V 120 -1.5 V 60 -2.0 V -2.5 V 0 0 1 2 3 4 5 1.50 1.25 1.00 0.75 0.50 0.25 0 0 VDS (V) 100 150 TBASE (˚C) Power Derating I-V 2 50 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A 200 Ka Band Power GaAs MESFET Chip AFM08P2-000 Typical S-Parameters (VDS = 5 V, IDS = 140 mA) S11 S21 S12 S22 Freq. (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. k S21 (dB) MAG (dB) 2 0.922 -60.551 6.183 137.340 0.034 56.434 0.268 -53.648 0.287 15.824 22.614 3 0.886 -83.281 5.297 121.790 0.043 45.053 0.276 -72.863 0.352 14.481 20.875 4 0.858 -100.870 4.511 109.080 0.048 37.488 0.288 -86.395 0.448 13.085 19.764 5 0.846 -114.840 3.873 98.238 0.052 31.412 0.311 -97.508 0.490 11.760 18.726 6 0.833 -125.710 3.349 89.148 0.053 26.013 0.330 -105.520 0.595 10.499 18.038 7 0.830 -134.240 2.937 81.086 0.053 22.971 0.356 -111.660 0.660 9.359 17.440 8 0.827 -141.250 2.594 73.980 0.053 20.266 0.380 -117.070 0.751 8.280 16.937 9 0.826 -146.950 2.320 67.488 0.052 19.130 0.403 -121.090 0.835 7.309 16.522 10 0.826 -151.670 2.099 61.486 0.051 18.861 0.430 -124.530 0.911 6.439 16.156 11 0.826 -155.980 1.912 55.846 0.050 18.901 0.453 -127.950 0.985 5.630 15.794 12 0.826 -159.860 1.757 50.480 0.050 19.638 0.473 -131.070 1.054 4.896 14.032 13 0.826 -163.530 1.626 45.189 0.050 20.670 0.494 -134.390 1.107 4.220 13.123 14 0.827 -167.030 1.511 40.055 0.050 22.571 0.513 -137.680 1.168 3.584 12.349 15 0.827 -170.710 1.412 34.928 0.050 24.590 0.529 -141.300 1.222 2.994 11.674 16 0.828 -174.110 1.319 29.877 0.051 27.112 0.543 -144.910 1.256 2.402 11.108 17 0.827 -177.880 1.238 24.729 0.053 30.441 0.560 -149.190 1.266 1.851 10.612 18 0.830 178.710 1.157 19.509 0.054 29.130 0.579 -153.840 1.234 1.266 10.358 19 0.833 175.150 1.082 14.691 0.055 30.607 0.597 -158.560 1.237 0.681 9.976 20 0.834 171.690 1.006 9.473 0.057 29.948 0.615 -163.450 1.248 0.056 9.504 21 0.833 168.290 0.931 4.393 0.055 29.691 0.634 -168.500 1.375 -0.624 8.613 22 0.826 165.410 0.854 -0.449 0.054 28.928 0.654 -173.410 1.567 -1.375 7.567 23 0.824 164.040 0.774 -2.962 0.055 40.109 0.659 -176.480 1.814 -2.221 6.302 24 0.837 162.480 0.725 -5.707 0.061 41.107 0.685 -178.940 1.477 -2.796 6.695 25 0.841 160.910 0.675 -8.703 0.065 41.668 0.712 178.250 1.317 -3.419 6.786 26 0.851 160.020 0.632 -11.155 0.066 39.422 0.726 176.760 1.190 -3.980 7.168 27 0.861 158.950 0.593 -13.702 0.068 41.344 0.749 175.380 1.036 -4.532 8.244 28 0.869 157.730 0.561 -15.712 0.072 42.416 0.772 174.350 0.864 -5.026 8.934 29 0.873 157.100 0.530 -17.951 0.075 43.221 0.790 173.430 0.742 -5.517 8.481 30 0.876 156.340 0.504 -19.794 0.079 43.832 0.800 172.620 0.665 -5.945 8.038 31 0.878 155.500 0.482 -21.803 0.084 44.410 0.812 171.720 0.574 -6.330 7.595 32 0.879 154.510 0.463 -24.305 0.088 43.920 0.825 170.440 0.492 -6.693 7.197 33 0.875 153.200 0.444 -26.438 0.094 43.615 0.830 169.140 0.473 -7.046 6.729 34 0.875 151.820 0.429 -28.745 0.100 42.418 0.832 167.450 0.439 -7.342 6.340 35 0.873 149.570 0.415 -31.738 0.105 40.012 0.834 164.770 0.420 -7.631 5.960 36 0.870 147.470 0.398 -34.529 0.109 38.334 0.830 162.000 0.476 -8.004 5.642 37 0.869 145.350 0.382 -37.857 0.111 36.215 0.825 158.610 0.519 -8.358 5.349 38 0.866 142.450 0.361 -41.301 0.115 34.590 0.821 154.480 0.610 -8.842 4.983 39 0.865 139.560 0.342 -44.109 0.117 31.940 0.822 150.320 0.666 -9.319 4.655 40 0.859 137.290 0.303 -48.395 0.121 28.969 0.814 145.770 0.846 -10.363 3.978 S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A 3