37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features Chip Outline ■ Single Bias Supply Operation (5.5 V) ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989 2.166 1.342 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.112 0.000 0.000 ■ 100% On-Wafer RF and DC Testing Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s three-stage reactively-matched Ka band GaAs MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37–39 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where power and gain are required. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 19 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 5.5 V) Parameter Condition Drain Current (at Saturation) Symbol Min. IDS 16 Typ. Max. Unit 200 370 mA -13 -10 dB -20 -10 Small Signal Gain F = 37–39 GHz G 18 Input Return Loss F = 37–39 GHz RLI dB Output Return Loss F = 37–39 GHz RLO Output Power at 1 dB Gain Compression F = 39 GHz P1 dB 16 19 dBm 19 dB Saturated Output Power F = 39 GHz PSAT 21 dBm Gain at Saturation F = 39 GHz GSAT 15 dB ΘJC 51 °C/W Thermal Resistance1 1. Calculated value based on measurement of discrete FET. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 8/00A 1 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 POUT at 40 GHz 21.0 S21 (dB) POUT at 39 GHz POUT (dBm) (dB) Typical Performance Data S11 (dB) 19.0 POUT at 37 GHz POUT at 38 GHz 17.0 S22 (dB) S12 (dB) 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 15.0 -4.0 -2.0 0.0 2.0 Frequency (GHz) 6.0 8.0 10.0 12.0 Typical Power Sweep Typical S-Parameters Bias Arrangement 5.5 V 4.0 PIN (dBm) Circuit Schematic .01 µF 50 pF RF IN RF OUT Detail A VDS 5.5 V .01 µF 50 pF For biasing on, adjust VDS from zero to the desired value (5.5 V recommended). For biasing off, reverse the biasing on procedure. RF IN SEE DETAIL A RF OUT VDS 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 8/00A