GaAs SPDT IC 10 Watt T/R Switch DC–2.5 GHz AW002R2-12 Features SOIC-8 ■ T/R Switch PIN 8 0.050 (1.27 mm) BSC ■ High Isolation (30 dB @ 0.9 GHz) ■ Designed for Mobile Radio Applications ■ P-1 dB ≥ 10 W @ 0.9 GHz ■ High Intercept Point (IP3 +63 dBm,@ 0.9 GHz) Description The AW002R2-12 is a high power IC FET SPDT switch in a plastic SOIC-8 package. This switch has been designed for use where extremely high linearity is required. It can be controlled with positive, negative or a combination of both voltages. Some standard implementations include antenna changeover, T/R and diversity switching over 2 W. This switch can be used in many analog and digital wireless communication systems including cellular, GSM and PCS applications. 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR 0.020 (0.51 mm) MAX. PIN 1 0.068 (1.73 mm) MAX. 0.197 (5.00 mm) 0.189 (4.80 mm) 0.010 (0.25 mm) 0.004 (0.10 mm) 0.016 MAX. (0.41 mm) x 45˚ CHAMFER 0.049 (1.24 mm) 0.016 (0.41 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm) 8˚ MAX. Electrical Specifications at 25°C (0, -5 V) Parameter1 Insertion Frequency2 Loss3 Min. DC–0.5 GHz DC–1.0 GHz DC–2.5 GHz Isolation DC–0.5 GHz DC–1.0 GHz DC–2.5 GHz VSWR4 DC–1.0 GHz DC–2.5 GHz 33 28 20 Typ. Max. Unit 0.7 0.8 1.0 0.8 0.9 1.1 dB dB dB 37 30 22 dB dB dB 1.2:1 1.5:1 1.4:1 1.7:1 dB dB Typ. Max. Unit Operating Characteristics at 25°C (0, -5 V) Parameter Condition Switching Characteristics5 Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru Input Power for 1 dB Compression 5V 10 V Intermodulation Intercept Point For Two-tone Input Power +13 dBm IP2 IP3 Control Voltages Frequency Min. 6 12 30 ns ns mV 0.9 GHz 0.9 GHz +35 +40 dBm dBm 0.9 GHz 0.9 GHz +75 +63 dBm dBm VLow = -12.0 V ≤ VLow ≤ 0 V, 500 µA Max. VHigh = 0 V ≤ VHigh ≤ +12.0 V, 500 µA Max. Differential = + 5.0 V ≤ (VHigh – VLow) < +12.0 V 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. DC = 300 kHz. 3. Insertion loss changes by 0.003 dB/°C. 4. Insertion loss state. 5. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 3/99A 1 GaAs SPDT IC 10 Watt T/R Switch DC–2.5 GHz AW002R2-12 Typical Performance Data (0, -5 V) 1.2 60 1.0 50 85˚C 0.8 dB dB 40 25˚C -40˚C 0.6 30 0.4 20 0.2 DC 10 1.0 2.0 DC 3.0 1.0 2.0 3.0 Frequency (GHz) Frequency (GHz) Insertion Loss vs. Frequency Isolation vs. Frequency 45 1.5 -10 V 40 PIN (dBm) 1.4 1.3 1.2 -5 V 35 30 25 1.1 20 DC 1.0 1 DC 2 3 1 2 3 Frequency (GHz) Frequency (GHz) PIN at 1 dB Compression vs. Frequency and Control Voltage VSWR vs. Frequency Absolute Maximum Ratings Pin Out Characteristic Value RF Input Power J2 V2 J1–J2 J1–J3 VHigh Insertion Loss Isolation VHigh VLow Isolation Insertion Loss 4 V1 VLow GND V1 CBL V2 Truth Table CBL 5 85°C/W GND External DC blocking capacitors (CBL) are required only if VHigh > 0.0 V. CBL = 100 pF for operation >500 MHz. VLow = 0 to -12.0 V. VHigh = 0 to +12.0 V. Differential = +5.0 V ≤ (VHigh – VLow) < +12.0 V. Refer to Application Notes for further information on differential voltage operation. 2 GND 6 -65°C to +150°C ΘJC 7 Storage Temperature CBL 3 -40°C to +85°C 8 (VHigh – VLow) < 12 V Operating Temperature 2 Control Voltage J1 1 11 W > 0.9 GHz, 0, -12 V Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 3/99A J3