AMICC A61L73081S-12

A61L73081 Series
128K X 8 BIT HIGH SPEED CMOS SRAM
Document Title
128K X 8 BIT HIGH SPEED CMOS SRAM
Revision History
Rev. No.
History
Issue Date
Remark
0.0
Initial issue
July 14, 2000
Preliminary
1.0
Change ICC1 from 120mA to 220mA
April 26, 2001
Final
100mA to 210mA
Change ISB1 from 8mA to 12mA
Change ICDR from 1mA to 5mA
Final spec. release
(April, 2001, Version 1.0)
AMIC Technology, Inc.
A61L73081 Series
128K X 8 BIT HIGH SPEED CMOS SRAM
Features
n
n
n
n
n
n
n
n
n
Center power pinout
Supply voltage: 3.3V±10%
Access times: 12/15 ns (max.)
Current: Operating: -12: 220mA (max.)
-15: 210mA (max.)
Standby: TTL: 25mA (max.)
CMOS: 12mA (max.)
Full static operation, no clock or refreshing required
All inputs and outputs are directly TTL compatible
Common I/O using three-state output
Data retention voltage: 2V (min.)
Available in 32-pin 300mil / 400mil SOJ packages
General Description
The A61L73081 is a high-speed 1,048,576-bit static
random access memory organized as 131,072 words by
8 bits and operates on a 3.3V power supply. It is built
using high performance CMOS process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
Minimum standby power is drawn by this device when
chip enable is disable, independent of the other input
levels.
Data retention is guaranteed at a power supply voltage
as low as 2V.
Pin Configurations
n SOJ
A0
32
A16
A1
2
31
A15
A2
3
30
A14
A3
4
29
A13
CE
5
28
OE
27
I/O 7
26
I/O 6
I/O 0
6
I/O 1
7
VCC
8
GND
9
I/O 2
10
I/O 3
11
WE
A61L73081S(SW)
(April, 2001, Version 1.0)
1
25
GND
24
VCC
23
I/O5
22
I/O 4
12
21
A12
A4
13
20
A11
A5
14
19
A10
A6
15
18
A9
A7
16
17
A8
1
AMIC Technology, Inc.
A61L73081 Series
Block Diagram
A0
ADDRESS
1,048,576-BIT
DECODER
MEMORY ARRAY
A16
8
I/O0 - I/O 7
8
I/O CONTROL
8
WE
CONTROL
LOGIC
OE
CE
Pin Descriptions – SOJ
(April, 2001, Version 1.0)
Pin No.
Symbol
1-4, 13-21, 29-32
A0 - A16
Address Inputs
6-7, 10-11, 22-23, 26-27
I/O0 - I/O7
Data Inputs/Outputs
5
CE
Chip Enable
28
OE
Output Enable
12
WE
Write Enable
8, 24
VCC
Power Supply
9, 25
GND
Ground
2
Description
AMIC Technology, Inc.
A61L73081 Series
Recommended DC Operating Conditions
(TA = 0°C to + 70°C)
Symbol
Parameter
VCC
Supply Voltage
GND
Ground
Min.
Typ.
Max.
Unit
3.0
3.3
3.6
V
0
0
0
V
VIH
Input High Voltage
2.2
-
VCC + 0.5
V
VIL
Input Low (1) Voltage
-0.5
0
+0.8
V
CL
Output Load
-
-
30
pF
Absolute Maximum Ratings*
*Comments
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . . . -0.5V to VCC +0.5V
Operating Temperature, Topr . . . . . . . . . . . 0°C to +70°C
Storage Temperature, Tstg . . . . . . . . . . -55°C to +125°C
Temperature Under Bias, Tbias . . . . . . . . -10°C to +85°C
Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended. Exposure to the absolute maximum
rating conditions for extended periods may affect device
reliability.
DC Electrical Characteristics
Symbol
Parameter
(TA = 0°C to + 70°C, VCC = 3.3V ± 10%, GND = 0V)
A61L73081-12
A61L73081-15
Min.
Max.
Min.
Max.
Unit
Conditions
ILI
Input Leakage
-
2
-
2
µA
VIN = GND to VCC
ILO
Output Leakage
-
2
-
2
µA
CE = VIH, OE = VIH
VI/O = GND to VCC
Dynamic Operating
Current
-
220
-
210
mA
CE = VIL, II/O = 0 mA
Min. Cycle, Duty = 100%
-
25
-
25
mA
CE = VIH
-
12
-
12
mA
CE ≥ VCC - 0.2V,
VIN ≥ VCC -0.2V or VIN ≤ 0.2V
ICC1 (2)
ISB
ISB1
Standby Power
Supply Current
VOL
Output Low Voltage
-
0.4
-
0.4
V
IOL = 8 mA
VOH
Output High Voltage
2.4
-
2.4
-
V
IOH = -4 mA
Notes: 1. VIL = -3.0V for pulses less than 20 ns.
2. ICC1 is dependent on output loading, cycle rates, and Read/Write patterns.
(April, 2001, Version 1.0)
3
AMIC Technology, Inc.
A61L73081 Series
Truth Table
CE
OE
WE
I/O Operation
Supply Current
Standby
H
X
X
High Z
ISB, ISB1
Output Disable
L
H
H
High Z
ICC1
Read
L
L
H
DOUT
ICC1
Write
L
X
L
DIN
ICC1
Mode
Note: X = H or L
Capacitance (TA = 25°C, f = 1.0MHz)
Symbol
Parameter
Min.
Max.
Unit
Conditions
CIN*
Input Capacitance
-
8
pF
VIN = 0V
CI/O*
Input/Output Capacitance
-
8
pF
VI/O = 0V
* These parameters are sampled and not 100% tested.
AC Characteristics (TA = 0°C to +70°C, VCC = 3.3V ± 10%)
Symbol
Parameter
A61L73081-12
A61L73081-15
Unit
Min.
Max.
Min.
Max.
12
-
15
-
ns
Read Cycle
tRC
Read Cycle Time
tAA
Address Access Time
-
12
-
15
ns
tACE
Chip Enable Access Time
-
12
-
15
ns
tOE
Output Enable to Output Valid
-
6
-
8
ns
tCLZ
Chip Enable to Output in Low Z
3
-
3
-
ns
tOLZ
Output Enable to Output in Low Z
0
-
0
-
ns
tCHZ
Chip Disable Output in High Z
0
6
-
8
ns
tOHZ
Output Disable to Output in High Z
0
6
0
8
ns
tOH
Output Hold from Address Change
3
-
3
-
ns
(April, 2001, Version 1.0)
4
AMIC Technology, Inc.
A61L73081 Series
AC Characteristics (continued)
Symbol
A61L73081-12
Parameter
A61L73081-15
Min.
Max.
Min.
Max.
Unit
Write Cycle
tWC
Write Cycle Time
12
-
15
-
ns
tCW
Chip Enable to End of Write
10
-
12
-
ns
tAS
Address Setup Time of Write
0
-
0
-
ns
tAW
Address Valid to End of Write
10
-
12
-
ns
tWP
Write Pulse Width
10
-
12
-
ns
tWR
Write Recovery Time
0
-
0
-
ns
tWHZ
Write to Output in High Z
0
6
0
8
ns
tDW
Data to Write Time Overlap
6
-
7
-
ns
tDH
Data Hold from Write Time
0
-
0
-
ns
tOW
Output Active from End of Write
3
-
3
-
ns
Notes: tCHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not
referred to output voltage levels.
Timing Waveforms
Read Cycle 1(1)
tRC
Address
tAA
OE
tOE
tOH
tOLZ5
CE
tOHZ5
tCHZ5
tACE
tCLZ5
DOUT
(April, 2001, Version 1.0)
5
AMIC Technology, Inc.
A61L73081 Series
Timing Waveforms (continued)
Read Cycle 2(1, 2, 4)
tRC
Address
tAA
tOH
tOH
DOUT
Read Cycle 3(1, 3, 4,)
CE
tACE
tCLZ5
tCHZ5
DOUT
Notes: 1.
2.
3.
4.
5.
WE is high for Read Cycle.
Device is continuously enabled, CE = VIL.
Address valid prior to or coincident with CE transition low.
OE = VIL.
Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.
(April, 2001, Version 1.0)
6
AMIC Technology, Inc.
A61L73081 Series
Timing Waveforms (continued)
Write Cycle 1(6)
(Write Enable Controlled)
tWC
Address
tAW
tWR 3
tCW 5
CE
(4)
tAS1
tWP 2
WE
tDW
tDH
DIN
tWHZ 7
tOW 7
DOUT
Write Cycle 2
(Chip Enable Controlled)
tWC
Address
tAW
tAS1
CE
tWR3
tCW5
(4)
tWP2
WE
tDW
tDH
DIN
tWHZ
DOUT
Notes: 1.
2.
3.
4.
tAS is measured from the address valid to the beginning of Write.
A Write occurs during the overlap (tWP) of a low CE and a low WE .
tWR is measured from the earliest of CE or WE going high to the end of the Write cycle
If the CE low transition occurs simultaneously with the WE low transition or after the WE transition, outputs
remain in a high impedance state.
5. tCW is measured from the later of CE going low to the end of Write.
6. OE is continuously low. ( OE = VIL)
7. Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.
(April, 2001, Version 1.0)
7
AMIC Technology, Inc.
A61L73081 Series
AC Test Conditions
Input Pulse Levels
0V to 3.0V
Input Rise and Fall Time
3 ns
Input and Output Timing Reference Levels
1.5V
Output Load
See Figures 1 and 2
3.3V
317Ω
DATA OUT
OUTPUT
351Ω
5pF*
RL=50Ω
ZO=50Ω
VT=1.5V
* Including scope and jig.
Figure 1. Output Load
Figure 2. Output Load for tCLZ, tOLZ,
tCHZ, tOHZ, tWHZ, and tOW
Data Retention Characteristics (TA = 0°C to 70°C)
Symbol
VDR
Parameter
VCC for Data Retention
Min.
Max.
Unit
2
3.6
V
ICCDR
Data Retention Current
-
5
mA
tCDR
Chip Disable to Data Retention
Time
0
-
ns
tR
Operation Recovery Time
Conditions
CE ≥ VCC - 0.2V
VCC = 2.0V
CE ≥ VCC - 0.2V
VIN ≥ VCC - 0.2V or
VIN ≤ 0.2V
See Retention Waveform
TRC*
-
ms
tRC = Read Cycle Time
(April, 2001, Version 1.0)
8
AMIC Technology, Inc.
A61L73081 Series
Low VCC Data Retention Waveform
DATA RETENTION MODE
VCC
3.0V
3.0V
tCDR
tR
VDR ³ > 2.0V
VIH
CE
VIH
CE ³ > VDR - 0.2V
Ordering Information
Part No.
Access Time (ns)
Operating Current
Max. (mA)
CMOS Standby
Max. (mA)
12
220
12
A61L73081S-12
32L 300mil SOJ
A61L73081SW-12
32L 400mil SOJ
A61L73081S-15
32L 300mil SOJ
15
210
A61L73081SW-15
(April, 2001, Version 1.0)
Package
12
32L 400mil SOJ
9
AMIC Technology, Inc.
A61L73081 Series
Package Information
SOJ 32L(300mil) Outline Dimensions
unit: inches/mm
D
17
1
16
E1
32
b
b1
S
e
D
Seating Plane
Symbol
A
y
Min
0.025"
y
0.004
Dimensions in inches
A1
A2
C
E
E2
y
Dimensions in mm
Min
Nom
Max
Min
Nom
Max
A
0.128
0.132
0.140
3.25
3.35
3.56
A1
0.052
-
-
2.08
-
-
A2
0.095
0.100
0.105
2.41
2.54
2.67
b
0.016
0.018
0.020
0.41
0.46
0.51
b1
0.026
0.028
0.032
0.66
0.71
0.81
C
0.006
0.008
0.012
0.15
0.20
0.30
D
0.820
0.825
0.830
20.83
20.96
21.08
E
0.330
0.335
0.340
8.39
8.51
8.63
E1
0.295
0.300
0.305
7.49
7.62
7.75
E2
0.260
0.267
0.274
6.61
6.78
6.96
e
-
0.050
-
-
1.27
-
S
-
-
0.048
-
-
1.22
y
-
-
0.004
-
-
0.10
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension E1 is for PC Board surface mount pad pitch design
reference only.
4. Dimension S includes end flash.
Package Information
(April, 2001, Version 1.0)
10
AMIC Technology, Inc.
A61L73081 Series
SOJ 32L (400mil) Outline Dimensions
unit: inches/mm
D
17
1
16
E1
32
b
b1
S
e
D
Seating Plane
Symbol
0.004
Dimensions in inches
A
θ
y
Min
0.025"
y
A1
A2
C
E
E2
y
Dimensions in mm
Min
Nom
Max
Min
Nom
Max
3.68
A
0.131
0.138
0.145
3.33
3.51
A1
0.082
-
-
2.08
-
-
A2
0.105
0.110
0.115
2.67
2.79
2.91
b
0.016
0.018
0.020
0.41
0.46
0.51
b1
0.026
0.028
0.032
0.66
0.71
0.81
C
0.006
0.008
0.011
0.15
0.20
0.28
D
0.820
0.825
0.830
20.83
20.96
21.08
E
0.435
0.440
0.445
11.05
11.18
11.31
E1
0.395
0.400
0.405
10.03
10.16
10.29
E2
0.360
0.370
0.380
9.15
9.40
9.65
e
-
0.050
-
-
1.27
-
S
-
-
0.045
-
-
1.14
y
-
-
0.004
-
-
0.10
θ
-5°
2°
6°
-5°
2°
6°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension E1 is for PC Board surface mount pad pitch design
reference only.
4. Dimension S includes end flash.
(April, 2001, Version 1.0)
11
AMIC Technology, Inc.