AF4362N N-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 6 ID (A) 18 The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Pin Descriptions Pin Assignments S 1 8 D Pin Name Description S 2 7 D S 3 6 D G 4 5 D S G D Source Gate Drain SO-8 Ordering information Feature F :MOSFET A X 4362N X X X PN Package Lead Free Packing S: SO-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Sep 5, 2005 1/5 AF4362N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ Rating 30 ±12 18 15 80 2.5 0.02 -55 to 150 -55 to 150 TA=25ºC Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Maximum 50 Max. Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Reference to 25oC, ID=1mA Coefficient VGS=10V, ID=18A Static Drain-Source VGS=4.5V, ID=12A On-Resistance (Note 3) VGS=2.5V, ID=6A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=12A Drain-Source Leakage Current VDS=30V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=24V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=±12V Total Gate Charge (Note 3) ID=18A, VDS=24V, Gate-Source Charge VGS=4.5V Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) VDS=15V, ID=1A, Rise Time RG=3.3Ω, VGS=10V Turn-Off Delay Time RD=15Ω Fall-Time Input Capacitance VGS=0V, VDS=25V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance Min. Typ. Max. Units 30 - - V - 0.01 - V/oC - - - 47 5 6 8 1.2 - - - 1 - - 25 - 59 10 23 16 12 96 30 5080 660 400 ±100 95 8100 - Min. - Typ. 43 39 Max. 1.2 - mΩ V S uA nA nC ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge 2 Test Conditions IS=18A, VGS=0V IS=18A, VGS=0V, dl/dt=100A/µs o Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 2/5 AF4362N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 3/5 AF4362N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 4/5 AF4362N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 4362 N AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information Package Type: SO-8 D 7 6 5 2 3 4 E1 E 8 1 L DETAIL A B C A1 A e θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L θ e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 0o 4o 8o 1.27 TYP. Anachip Corp. www.anachip.com.tw Rev. 1.1 Sep 5, 2005 5/5