ANACHIP AF4362NSL

AF4362N
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Simple Drive Requirement
- Low On-resistance
- Fast Switching
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
„ Product Summary
BVDSS (V)
30
RDS(ON) (mΩ)
6
ID (A)
18
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Pin Descriptions
„ Pin Assignments
S
1
8
D
Pin Name
Description
S
2
7
D
S
3
6
D
G
4
5
D
S
G
D
Source
Gate
Drain
SO-8
„ Ordering information
Feature
F :MOSFET
A X
4362N X X X
PN
Package
Lead Free
Packing
S: SO-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/5
AF4362N
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
Rating
30
±12
18
15
80
2.5
0.02
-55 to 150
-55 to 150
TA=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient (Note 1)
Maximum
50
Max.
Units
ºC/W
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
BVDSS
∆BVDSS / ∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Reference to 25oC,
ID=1mA
Coefficient
VGS=10V, ID=18A
Static Drain-Source
VGS=4.5V, ID=12A
On-Resistance (Note 3)
VGS=2.5V, ID=6A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=12A
Drain-Source Leakage Current
VDS=30V, VGS=0V
(TJ=25oC)
Drain-Source Leakage Current
VDS=24V, VGS=0V
(TJ=70oC)
Gate-Source Leakage
VGS=±12V
Total Gate Charge (Note 3)
ID=18A,
VDS=24V,
Gate-Source Charge
VGS=4.5V
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
VDS=15V,
ID=1A,
Rise Time
RG=3.3Ω, VGS=10V
Turn-Off Delay Time
RD=15Ω
Fall-Time
Input Capacitance
VGS=0V,
VDS=25V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
Min.
Typ.
Max.
Units
30
-
-
V
-
0.01
-
V/oC
-
-
-
47
5
6
8
1.2
-
-
-
1
-
-
25
-
59
10
23
16
12
96
30
5080
660
400
±100
95
8100
-
Min.
-
Typ.
43
39
Max.
1.2
-
mΩ
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
2
Test Conditions
IS=18A, VGS=0V
IS=18A, VGS=0V,
dl/dt=100A/µs
o
Unit
V
ns
nC
Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
2/5
AF4362N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
3/5
AF4362N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
4/5
AF4362N
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
SO-8
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
4362 N
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
„ Package Information
Package Type: SO-8
D
7
6
5
2
3
4
E1
E
8
1
L
DETAIL A
B
C
A1
A
e
θ
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A
A1
B
C
D
E
E1
L
θ
e
Dimensions In Millimeters
Min.
Nom.
Max.
1.35
1.55
1.75
0.10
0.18
0.25
0.33
0.41
0.51
0.19
0.22
0.25
4.80
4.90
5.00
5.80
6.15
6.50
3.80
3.90
4.00
0.38
0.71
1.27
0o
4o
8o
1.27 TYP.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
5/5