AF1333P P-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive - Fast Switching Speed - Small Package Outline (SOT323) The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Product Summary BVDSS = -20V RDS (on) = 800mΩ. ID = -550mA Pin Assignments Pin Descriptions Pin No. 1 2 3 3 (Top View) 1 1. G 2. S 3. D 2 Pin Name G S D Description Gate Source Drain Ordering information A Feature F :MOSFET X 1333P X X X Package Lead Free Packing U: SOT323 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel PN Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 15, 2004 1/5 AF1333P P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2, 3) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ TA=25ºC Rating -20 ±12 -550 -440 -2.5 0.35 0.003 -55 to +150 -55 to +150 Unit V V A W W/oC o C o C Value 360 Unit ºC/W mA Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-Ambient (Note 1) Max. Electrical Characteristics at TA=25oC (unless otherwise specified) Symbol BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Reference to 25oC, ID=-1mA Coefficient VGS=-10V, ID=-550mA Static Drain-Source VGS=-4.5V, ID=-550mA On-Resistance VGS=-2.5V, ID=-300mA Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-5V, ID=-500mA Drain-Source Leakage Current VDS=-20V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=-16V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=±12V Total Gate Charge (Note 3) ID=-500mA, VDS=-16V, Gate-Source Charge VGS=-4.5V Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) VDS=-10V, ID=-500mA, Rise Time RG=3.3Ω, VGS=-5V Turn-Off Delay Time RD=20Ω Fall-Time Input Capacitance VGS=0V, VDS=-10V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance Min. -20 Typ. - Max. - Unit V - 0.01 - V/oC -0.5 - 1 600 800 1000 -1.2 - - - -1 - - -10 - 1.7 0.3 0.4 5 8 10 2 66 25 20 ±100 2.7 105.6 - Min. - Typ. - Max. -1.2 mΩ V S uA nA nC ns pF Source-Drain Diode Symbol VDS Parameter Forward On Voltage (Note 3) Note 1: Surface mounted on FR4 board, t ≤ 10 sec. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Test Conditions IS=-300mA, VGS=0V Anachip Corp. www.anachip.com.tw Rev. 1.0 2/5 Unit V Oct 15, 2004 AF1333P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.0 3/5 Oct 15, 2004 AF1333P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.0 4/5 Oct 15, 2004 AF1333P P-Channel Enhancement Mode Power MOSFET Marking Information (Top View) SOT323 3 XX Part Number: AF1333P A~Z: Week: 27~52 or Lot No: 1~9 A~Z: Week: 01~26 or Lot No: 1~9 X X: Year: 4 years in one cycle X X: 2004, 2008, 2012... X X: 2005, 2009, 2013... X X: 2006, 2010, 2014... X X: 2007, 2011, 2015... Package Information Package Type: SOT323 D A A1 E E1 D1 *Dimension does not include mold protrusions. e Symbol A A1 D D1 E E1 e Dimensions In Millimeters Min. 0.90 0.03 1.90 0.20 2.00 1.15 Nom. 1.00 0.07 2.00 0.30 2.10 1.25 1.30 Bsc. Max. 1.10 0.10 2.10 0.40 2.20 1.35 Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. 0.035 0.001 0.075 0.008 0.079 0.045 Nom. 0.039 0.003 0.079 0.012 0.083 0.049 0.051 Bsc. Max. 0.043 0.004 0.083 0.016 0.087 0.053 Rev. 1.0 5/5 Oct 15, 2004