AWS5522 0.5 to 2.5 GHz SPDT Switch ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • • • • Low Insertion Loss: 0.5 dB at 2 GHz High Isolation: > 25 dB Low Harmonic Levels: < -65 dBc Low Control Voltage Operation: to +2.5 V Low Profile Surface Mount Package AW S55 22 APPLICATIONS • • GSM Wireless Handsets and Front-end Modules CDMA Wireless Handsets and Front-end Modules S26 Package 12 Pin MLF 3mm x 3mm D1 Die PRODUCT DESCRIPTION The AWS5522 is a single pole, double throw (SPDT) RF switch developed to meet the stringent requirements of GSM and CDMA systems. Manufactured in ANADIGICS’s state-of-the-art pHEMT process, the device uses patent-pending VS1 circuit topologies to provide the low insertion loss, high port-to-port isolation and high linearity needed to enhance the performance of wireless handset radios. The AWS5522 is offered both as an MMIC die and in a 12-lead 3mm x 3mm MLF package. RFC VS2 RF2 RF1 RF1G V1 V2 RF2G Figure 1: Block Diagram 12/2002 AWS5522 Table 1 : Pad Description NAME RF1 VS1 RF1G VS1 Common port bias voltage (logic high) RF1 RF port, path 1 RF1G V1 RFC DESCRIPTION Ground V1 Control voltage, RF path 1 V2 Control voltage, RF path 2 V2 RF2G RF2G RF2 Ground RF2 RF port, path 2 VS2 Common port bias voltage (logic high) RFC RF common port VS2 Dimensions in µm. Bond Pads: 100µm x75µm Die Thickness: 178µm No backside metal. Figure 2 : Die Configuration Table 2: Pin Description PIN NAME 2 RF1 RF port, path 1 4 V1 Control voltage, RF path 1 NC RFC VS2 12 11 10 NC 1 9 NC RF1 2 8 RF2 6 V2 Control voltage, RF path 2 GND 3 7 GND 8 RF2 RF port, path 2 10 VS2 Common port bias Voltage (logic high) 11 RFC RF common port 3, 7 GND Ground 1, 5, 9, 12 NC 4 5 V1 NC 6 V2 Figure 3: Packaged Device Pinout (X-ray Top View) 2 DESCRIPTION ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 No connection AWS5522 ELECTRICAL CHARACTERISTICS Table 3: Absolute Minimum and Maximum Ratings MIN MAX UNIT Common Port Bias Voltage (VS) -0.2 +8.0 V Control Voltages (V1, V2) -0.2 +8.0 V - 10 W -65 +150 °C PARAMETER RF Input Power (PIN) Storage Temperature (2) COMMENTS at VS1 or VS2 (1) at RF1, RF2 and RFC Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Notes: (1) The VS1 and VS2 ports may remain open-circuited without damage to the device. (2) Storage Temperature limits apply to the die only after it has been removed from the ANADIGICS shipping material. (The limits apply at all times for the packaged device.) 3. The RF1, RF2 and RFC ports should be AC-coupled. No external DC bias should be applied. Table 4: Operating Ranges PARAMETER RF Frequency (f) MIN TYP MAX UNIT 0.5 - 2.5 GHz Common Port Bias Voltage (VS) COMMENTS applied at either VS1 or VS2 port (1) Control Voltages (V1, V2) 0 +2.5 - +0.2 +3.5 V Ambient Temperature (TA) -30 - +85 °C RF path OFF state RF path ON state The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For optimal linearity performance, the Common Port Bias Voltage (VS) should be set to the same Control Voltage used to turn ON either of the individual RF paths. The VS1 and VS2 ports may remain open-circuited without damage to the device, but with some degradation in linearity. ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 3 AWS5522 Table 5: Electrical Specifications - Unpackaged Die (TA = +25 °C; RF ports terminated with 50 Ω; Vn = +2.7 V and is the Control Voltage for the ON path, RFC-RFn; Vx = 0 V and is the Control Voltage for the OFF path, RFC-RFx) PARAMETER MIN TYP MAX UNIT Insertion Loss 1 GHz 2 GHz - 0.4 0.5 0.6 0.8 dB RFC port to selected RFn port Return Loss (1) 1 GHz 2 GHz - -30 -32 -20 -20 dB RFC port and selected RFn port 25 25 27 27 - dB RFC port to isolated RFx port Input Third Order Intercept (2) 800 MHz Cellular Band 1900 MHz PCS Band - +60 +59 - dBm RFC port to selected RFn port 2nd Harmonic Rejection (3) 1 GHz 2 GHz - -79 -78 -65 -65 dBc PIN = +34 dBm PIN = +32 dBm 3rd Harmonic Rejection (3) 1 GHz 2 GHz - -88 -81 -65 -65 dBc PIN = +34 dBm PIN = +32 dBm - - 30 5 µA µA each Vn port VS1 or VS2 port Isolation 1 GHz 2 GHz Current Consumption COMMENTS Notes: (1) The isolated RFx port has a return loss of approximately -3 dB. (2) For the Cellular Band, two tones with PIN = +22.5 dBm each, at 900.0 and 900.1 MHz. For the PCS Band, two tones with PIN = +21 dBm each, at 1900.0 and 1900.1 MHz. (3) Vs = Vn Table 6: Switch Control Truth Table CONTROL VOLTAGES 4 RF PATH SELECTION V1 V2 RFC - RF1 RFC - RF2 +2.5 to +3.5 V 0 to +0.2 V ON OFF 0 to +0.2 V +2.5 to +3.5V OFF ON ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 AWS5522 Table 7: Electrical Specifications - Packaged Device (TA = +25 °C; RF ports terminated with 50 Ω; Vn = +2.7 V and is the Control Voltage for the ON path, RFC-RFn; Vx = 0 V and is the Control Voltage for the OFF path, RFC-RFx) PARAMETER MIN TYP MAX UNIT Insertion Loss 1 GHz 2 GHz - 0.4 0.5 -0.6 -0.8 dB RFC port to selected RFn port Return Loss (1) 1 GHz 2 GHz - -28 -33 -20 -20 dB RFC port and selected RFn port 25 25 27 27 - dB RFC port to isolated RFx port Input Third Order Intercept (2) 800 MHz Cellular Band 1900 MHz PCS Band - +60 +59 - dBm RFC port to selected RFn port 2nd Harmonic Rejection (3) 1 GHz 2 GHz - -75 -76 -65 -65 dBc PIN = +34 dBm PIN = +32 dBm 3rd Harmonic Rejection (3) 1 GHz 2 GHz - -70 -74 -65 -65 dBc PIN = +34 dBm PIN = +32 dBm - - 30 5 µA µA each Vn port VS2 port Isolation 1 GHz 2 GHz Current Consumption COMMENTS Notes: (1) The isolated RFx port has a return loss of approximately -3 dB. (2) For the Cellular Band, two tones with PIN = +22.5 dBm each, at 900.0 and 900.1 MHz. For the PCS Band, two tones with PIN = +21 dBm each, at 1900.0 and 1900.1 MHz. (3) Vs = Vn ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 5 AWS5522 PERFORMANCE DATA Figure 5: Insertion Loss vs. Frequency Packaged Device (ON path, Vn = +2.7 V, Vx = 0 V) 0 0 -0.2 -0.2 Insertion Loss (dB) Insertion Loss (dB) Figure 4: Insertion Loss vs. Frequency Unpackaged Die (ON path, Vn = +2.7 V, Vx = 0 V) -0.4 -0.6 -0.8 -0.4 -0.6 -0.8 -1 500 1000 1500 2000 -1 500 2500 1000 Frequency (MHz) Figure 6: Return Loss vs. Frequency Upackaged Die (ON path, Vn = +2.7 V, Vx = 0 V) RFC port RFn port -10 Return Loss (dB) Return Loss (dB) -10 -20 -30 -40 -20 -30 -40 1000 1500 2000 -50 500 2500 1000 Frequency (MHz) 2000 2500 Figure 9: Isolation vs. Frequency Packaged Device (OFF path, Vn = +2.7 V, Vx = 0 V) 0 0 -10 -10 Isolation (dB) Isolation (dB) 1500 Frequency (MHz) Figure 8: Isolation vs. Frequency Unpackaged Die (OFF path, Vn = +2.7 V, Vx = 0 V) -20 -30 -40 -20 -30 -40 1000 1500 2000 2500 -50 500 1000 Frequency (MHz) 6 2500 0 RFC port RFn port -50 500 2000 Figure 7: Return Loss vs. Frequency Packaged Device (ON path, Vn = +2.7 V, Vx = 0 V) 0 -50 500 1500 Frequency (MHz) ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 1500 Frequency (MHz) 2000 2500 AWS5522 Figure 10: Harmonics of 1 GHz vs. Control Voltage Unpackaged Die (ON path, Vx = 0 V, f = 1 GHz, PIN = +34 dBm) Figure 11: Harmonics of 1 GHz vs. Control Voltage Packaged Device (ON path, Vx = 0 V, f = 1 GHz, PIN = +34 dBm) -30 -30 2nd Harmonic, Vs open 2nd Harmonic, Vs = Vn 3rd Harmonic, Vs open 3rd Harmonic, Vs = Vn 2nd Harmonic, Vs open 2nd Harmonic, Vs = Vn 3rd Harmonic, Vs open 3rd Harmonic, Vs = Vn -40 -50 Harmonic Level (dBc) Harmonic Level (dBc) -40 -60 -70 -80 -90 -50 -60 -70 -80 -90 -100 -100 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 2.5 2.6 2.7 2.8 Control Voltage (V) Figure 12: Harmonics of 2 GHz vs. Control Voltage Unpackaged Die (ON path, Vx = 0 V, f = 2 GHz, PIN = +32 dBm) 3 3.1 3.2 3.3 3.4 3.5 Figure 13: Harmonics of 2 GHz vs. Control Voltage Packaged Device (ON path, Vx = 0 V, f = 2 GHz, PIN = +32 dBm) -30 -30 2nd Harmonic, Vs open 2nd Harmonic, Vs = Vn 3rd Harmonic, Vs open 3rd Harmonic, Vs = Vn -40 2nd Harmonic, Vs open 2nd Harmonic, Vs = Vn 3rd Harmonic, Vs open 3rd Harmonic, Vs = Vn -40 -50 Harmonic Level (dBc) Harmonic Level (dBc) 2.9 Control Voltage (V) -60 -70 -80 -90 -50 -60 -70 -80 -90 -100 -100 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 2.5 2.6 2.7 2.8 Control Voltage (V) ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 2.9 3 3.1 3.2 3.3 3.4 3.5 Control Voltage (V) 7 AWS5522 APPLICATION INFORMATION Unpackaged Die Applications Bonding and circuit connections for the unpackaged AWS5522 die are shown in Figure 14, and application details are listed in the following notes: 3. The RF Ground bondwires should be kept as short as possible and bonded directly to a good RF ground for best broadband performance. 1. Cb are DC blocking capacitors external to the device. A value of 100pF is sufficient for operation to 500MHz. The values may be tailored to provide specific electrical responses. The isolation of the switch provides enough decoupling of the RF1 and RF2 ports so that overall switch performance is not affected. 4. L ESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. The ESD rating of the device is ±125V HBM overall. This rating is associated with the control pin to RF port path. RF port to RF port/RF Gnd has been determined to be >±500V HBM for this technology. By using LESD as an RF choke on a port, an ESD protection to ±8kV contact discharge can be achieved. 2. The VS1 and VS2 pins provides a fixed voltage potential to the common port of the switch. To get the best linear performance, either VS1 or VS2 should be tied to the logic high voltage potential (not the power supply). Only one of these pins need be attached, with the decision determined by external circuit layout. Current draw on this pin is less than 5µA. 5. The die may be attached by either conductive or non-conductive epoxy formulated for attaching semiconductor parts. The back of the die is electrically isolated from the switch circuit and can be grounded or left isolated. Common (Ant.) RF Port LESD Cb Note 4 Common Port Supply Note 2 (Logic high) Cb RF Port 1 RFC VS1 RF1 RF1G Cb VS2 RF Port 2 RF2 V1 V2 RF2G Keep RF Gnd Bondwires Short 2 Places, Note 3 RF Gnd, Path 1 Shunt Control Pin, RF Path 1 RF Gnd, Path 2 Shunt Control Pin, RF Path 2 Figure 14: Unpackaged Die Application Schematic 8 ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 AWS5522 Packaged Device Applications External component requirements for the packaged AWS5522 device are shown in Figure 15, and application details are listed in the following notes: 1. Cb are DC blocking capacitors external to the device. A value of 100pF is sufficient for operation to 500MHz. The values may be tailored to provide specific electrical responses. The isolation of the switch provides enough decoupling of the RF1 and RF2 ports so that overall switch performance is not affected. 2. The VS2 pin provides a fixed voltage potential to the common port of the switch. To get the best linear performance, VS2 should be tied to the logic high voltage potential (not the power supply). Current draw on this pin is less than 5µA. 3. The RF Ground connections should be kept as short as possible and tied directly to a good RF ground for best broadband performance. 4. LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. The ESD rating of the device is ±125V HBM overall. This rating is associated with the control pin to RF port path. RF port to RF port/RF Gnd has been determined to be >±500V HBM for this technology. By using LESD as an RF choke on a port, an ESD protection to ±8kV contact discharge can be achieved. 5. The large pad on the bottom of the package should be soldered to ground to assure proper performance of the device. Common (Ant.) RF Port LESD Cb Note 4 NC RFC VS2 Common Port Supply 12 11 10 Note 2 (Logic high) NC 1 9 NC RF1 2 8 RF2 3 7 Cb 4 5 6 NC V2 RF Gnd, Path 1 Shunt V1 Cb RF Port 1 Control Pin, RF Path 1 RF Port 2 RF Gnd, Path 2 Shunt Keep RF Gnd Connection Short 2 Places, Note 3 Control Pin, RF Path 2 Figure 15: Packaged Device Application Schematic ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 9 AWS5522 PACKAGE OUTLINE 0.08 7. 2X 0.15 D1 C A D A C A A3 b 0.20 DIA. A1 2X 4. 0.48 TYP. 0.15 0.10 M C A B 6. 5. PIN #1 ID R0.20 C B 1 1 2 2 E 3 E 3 L e C B SEATING PLANE TOP VIEW BOTTOM VIEW NOTES : S Y M B O L DIMENSIONS-MM NOM. MAX. MIN. A A1 A3 b D D1 E E1 e 0.80 0.00 L 0.35 0.18 1.45 1.45 0.85 0.01 0.20 REF. 0.23 3.00 BSC 1.60 3.00 BSC 1.60 0.50 BSC 0.40 1.00 0.05 0.30 1.75 1.75 0.55 N O T E S Y M B O L A A1 A3 b D D1 E E1 e L DIMENSIONS-INCHES MIN. NOM. MAX. 0.031 0.000 0.007 0.057 0.057 0.014 0.033 0.0003 0.008 0.009 0.118 BSC 0.063 0.118 BSC 0.063 0.019 BSC 0.016 0.039 0.001 0.011 0.069 0.069 0.022 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. MAX. PACKAGE WARPAGE IS 0.05 mm. 3. MAXIMUM ALLOWABLE BURRS IS 0.076 mm IN ALL DIRECTIONS. N O T E 4. PIN #1 ID ON TOP WILL BE LASER/INK MARKED. 5. APPLIED ONLY FOR TERMINALS 6. DIMENSION b APPLIES TO METALLIZED TERMINAL AND IS MEASURED BETWEEN 0.20 AND 0.25mm FROM TERMINAL TIP. 7. APPLIED FOR EXPOSED PAD AND TERMINALS. EXCLUDE EMBEDDING EXPOSED PART FROM MEASURING. 8. REFERENCE JEDEC OUTLINE MO-220. Figure 16: S26 Package Outline - 12 Pin 3mm x 3mm MLF P8_2035 10 ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 AWS5522 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002 11 AWS5522 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWS5522D1 -30 °C to +85 °C Die (contact ANADIGICS for details) AWS5522S26 -30 °C to +85 °C 12 Pin 3mm x 3mm MLF Tape & Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 ADVANCED PRODUCT INFORMATION - Rev 0.1 12/2002