APM3054N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/15A, RDS(ON)=48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package 1 2 3 G D S Top View of TO-252 1 2 3 G D S Top View of SOT-223 Applications • • 1 2 3 G D S Switching Regulators Switching Converters Top View of SOT-89 Ordering and Marking Information A P M 3 054 N Package C ode D : S O T -8 9 U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TR : Tape & R eel H a n d lin g C o d e Tem p. R ange Package C ode AP M 3054N U : A P M 3 0 5 4 N D /V : XXXXX AP M 3054N XXXXX AP M 3054N XXXXX - D a te C o d e X X X X X - D a te C o d e Absolute Maximum Ratings Symbol V : S O T -2 2 3 (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Maximum Drain Current – Continuous 15 IDM Maximum Drain Current – Pulsed 30 IS Diode Continuous Forward Current 8 Unit V A A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw APM3054N Absolute Maximum Ratings (Cont.) Symbol ISM (TA = 25°C unless otherwise noted) Parameter Diode Maximum Pulse Current T A =25°C PD Maximum Power Dissipation T A =100°C TJ T STG Symbol 32 A 62.5 SOT-223 3 TO-252 25 SOT-223 1.2 W W Storage Temperature Range Parameter Unit TO-252 Maximum Junction Temperature Electrical Characteristics Rating 150 °C -55 to 150 °C (TA = 25°C unless otherwise noted) Test Condition Min. APM3054N Typ. Max. Unit Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage VGS=0V, IDS=250µA 30 V VDS=24V, VGS =0V VDS=VGS, IDS=250µA 1 1 µA 3 V ±100 nA Gate Leakage Current VGS=±20V, V DS=0V Drain-Source On-state VGS=10V, IDS=12A 48 54 Resistance VGS=4.5V, IDS=6A 75 90 Diode Forward Voltage ISD=8A, VGS=0V 0.6 1.3 mΩ V Dynamic Qg Total Gate Charge 9 VDS=15V, VGS =5V, Qgs Gate-Source Charge Qgd Gate-Drain Charge 2.4 td(ON) Turn-on Delay Time 11 tr Turn-on Rise Time VDD=15V,ID=2A, 17 td(OFF) Turn-off Delay Time VGS=10V, RG=6Ω 37 IDS=10A 5.4 ns 20 tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 400 Coss Output Capacitance VDS=25V 75 C rss Reverse Transfer Frequency=1.0MHz 45 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 nC 2 pF www.anpec.com.tw APM3054N Typical Characteristics Output Characteristics Transfer Characteristics 25 20 TJ=-55°C ID-Drain Current (A) ID-Drain Current (A) VGS=6,7,8,9,10V 15 V GS =5V 10 V GS =4V 5 20 TJ=25°C TJ=125°C 15 10 5 V GS=3V 0 0 1 2 3 4 0 0 5 2 VDS - Drain-to-Source Voltage (V) 8 10 On-Resistance vs. Drain Current 1.2 0.12 RDS(on)-On-Resistance (Ω) IDS=250uA VGS(th)-Threshold Voltage (V) (Normalzed) 6 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Temperature 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 -25 0 25 50 75 VGS=4.5V 0.08 0.06 VGS=10V 0.04 0.02 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 0.10 0 2 4 6 8 10 ID - Drain Current (A) 3 www.anpec.com.tw APM3054N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.10 0.35 VGS=10V RDS(on)-On-Resistance (Ω) (Normalized) RDS(on)-On-Resistance (Ω) ID=6A 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 2 3 4 5 6 7 8 9 0.00 -50 10 -25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 125 150 10 0.10 V GS=10V 0.09 IDS=12A VGS-Gate-Source Voltage (V) RDS(on)-On-Resistance (Ω) 0.09 ID=12A 0.08 0.07 0.06 0.05 0.04 0.03 0.02 V DS =15V IDS=10A 8 6 4 2 0.01 0.00 -50 -25 0 25 50 75 100 125 0 150 5.0 7.5 10.0 12.5 15.0 QG - Gate Charge (nC) TJ - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 2.5 4 www.anpec.com.tw APM3054N Typical Characteristics Capacitance Source-Drain Diode Forward Voltage 750 30 IS-Source Current (A) Capacitance (pF) 625 500 Ciss 375 250 125 0 10 0 5 10 15 20 TJ=25°C TJ=150°C Coss Crss 25 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 30 VDS - Drain-to-Source Voltage (V) VSD -Source-to-Drain Voltage (V) Single Pulse Power Single Pulse Power TO-252 SOT-223 250 140 120 200 Power (W) Power (W) 100 150 100 80 60 40 50 20 0 1E-3 0.01 0.1 1 10 100 0 0.01 1000 1 10 100 1000 Time (sec) Time (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 0.1 5 www.anpec.com.tw APM3054N Typical Characteristics Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance TO-252 1 Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 0.1 D=0.02 D=0.01 SINGLE PULSE 0.01 1E-4 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient SOT-223 1 Duty Cycle = 0.5 D= 0.2 0.1 D= 0.1 D= 0.05 D= 0.02 0.01 D= 0.01 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=42°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 6 www.anpec.com.tw APM3054N Package Information SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62) D D1 a E H 1 2 3 L C B1 B e e1 A a D im A B B1 C D D1 e e1 E H L α M illim eters M in. 1.40 0.40 0.35 0.35 4.40 1.35 Inches M ax. 1.60 0.56 0.48 0.44 4.60 1.83 M in. 0.055 0.016 0.014 0.014 0.173 0.053 1.50 B SC 3.00 B SC 2.29 3.75 0.80 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 M ax. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 B SC 2.60 4.25 1.20 10° 7 0.090 0.148 0.031 0.102 0.167 0.047 10° www.anpec.com.tw APM3054N Package Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 0. 0 20 8 www.anpec.com.tw APM3054N Package Information SOT-223( Reference JEDEC Registration SOT-223) D A B1 a c H E L K e A1 e1 b B Dim A A1 B B1 c D E e e1 H L K α β Millimeters Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Inches Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 Min. 0.06 Max. 0.07 0.02 0.11 0.01 0.25 0.13 0.03 0.12 0.01 0.26 0.15 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0° Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 0.09 BSC 0.18 BSC 7.30 1.10 2.00 10° 0.26 0.04 0.06 0° 13° 0.29 0.04 0.08 10° 13° 9 www.anpec.com.tw APM3054N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 10 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM3054N R e lia b ilit y te s t p r o g r a m Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 °C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 ° C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C -6 5 °C ~ 1 5 0 °C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 11 www.anpec.com.tw APM3054N Application SOT-89 Application TO-252 Application SOT-223 A B C 178 ±1 70 ± 2 F D D1 5.5 ± 0.05 1.5± 0.1 A J T1 T2 P E 1.3 ± 0.3 W 12 + 0.3 12 - 0.1 14 ± 2 8 ± 0.1 1.75± 0.1 Po P1 Ao Bo Ko t 1.5± 0.1 4.0 ± 0.1 2.0 ± 0.1 4.8 ± 0.1 4.5± 0.1 B C J T2 E 13 ± 0. 5 2 ± 0.5 2.5± 0.5 W 16+ 0.3 - 0.1 P 100 ± 2 T1 16.4 + 0.3 -0.2 330 ±3 8 ± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t 7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 A B J T1 T2 W P E 330±1 62±1.5 C 12.75± 0.15 2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05 13.5 ± 0.15 3 ± 0.15 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 1.80± 0.1 0.3±0.013 Cover Tape Dimensions Application SOT- 89 SOT- 223 TO- 252 Carrier Width 12 12 16 Cover Tape Width 9.3 9.3 13.3 Devices Per Reel 1000 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 12 www.anpec.com.tw