APM3023N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/30A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages • • Switching Regulators 2 3 G D S Top View of SOT-223 Top View of TO-252 Applications 1 3 S 2 D 1 G Switching Converters TO-220 Package Ordering and Marking Information A P M 3 023 N Package C ode U : T O -2 5 2 V : S O T -2 2 3 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel H a n d lin g C o d e Tem p. R ange Package C ode A P M 3 0 2 3 N U /F : : AP M 3023N XXXXX AP M 3023N V : AP M 3023N XXXXX XXXXX - D a te C o d e X X X X X - D a te C o d e Absolute Maximum Ratings Symbol F : T O -2 2 0 (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous 30 IDM Maximum Drain Current – Pulsed 70 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 1 www.anpec.com.tw APM3023N Absolute Maximum Ratings (Cont.) Symbol (TA = 25°C unless otherwise noted) Parameter Rating TO-252/TO-220 62.5 SOT-223 3 TO-252/TO220 25 SOT-223 1.2 TA=25°C PD Maximum Power Dissipation W TA=100°C TJ W Maximum Junction Temperature TSTG Storage Temperature Range Electrical Characteristics Symbol Parameter Unit 150 °C -55 to 150 °C (TA = 25°C unless otherwise noted) Test Condition APM3023N Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current Drain-Source On-state RDS(ON)a Resistance Diode Forward Voltage VSDa VGS=0V , IDS=250µA 30 V VDS=24V , VGS=0V 1 VDS=24V, VGS=0V, Tj= 55°C VDS=VGS , IDS=250µA 5 µA 1.5 2 V VGS=±20V , VDS=0V VGS=10V , IDS=20A nA 15 ±100 20 VGS=5V , IDSs=10A 22 28 ISD=15A , VGS=0V 0.7 1.3 VDS=15V , IDS= 10A 15 20 VGS=5V , 5.8 1 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time 11 18 Tr Turn-on Rise Time VDD=15V , IDS=2A , 17 26 td(OFF) Turn-off Delay Time VGEN=10V , RG=6Ω 37 54 20 30 Tf Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Notes a b nC 3.8 VGS=0V ns 1200 VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz 220 pF 100 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 2 www.anpec.com.tw APM3023N Typical Characteristics Output Characteristics Transfer Characteristics 40 30 VDS=10V 25 IDS-Drain Current (A) IDS-Drain Current (A) VGS=5,6,7,8,9,10V 20 VGS=4V 15 10 30 20 TJ=25°C 10 TJ=125°C TJ=-55°C 5 VGS=3V 0 0 2 4 6 8 0 1.0 10 VDS-Drain-to-Source Voltage (V) 1.5 3.0 3.5 4.0 On-Resistance vs. Drain Current 0.040 IDS=250µA RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) 2.5 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 2.0 1.0 0.8 0.6 0.035 VGS=5V 0.030 0.025 0.020 VGS=10V 0.015 0.010 0.005 0. 4 -50 -25 0 25 50 75 0.000 0 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 5 10 15 20 25 30 IDS-Drain Current (A) 3 www.anpec.com.tw APM3023N Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature 45 1.6 RDS(ON)-On-Resistance (Ω) (Normalized) 40 RDS (ON)-On-Resistance (Ω) V GS=10V ID=12A IDS=20A 35 30 25 20 15 10 1.4 1.2 1.0 0.8 5 0 3 4 5 6 7 8 9 0.6 -50 10 -25 Gate Voltage (V) 25 50 75 10 0 12 5 15 0 Tj-Junction Temperature (°C) Capacitance Characteristics Gate Charge 2000 10 Ciss VDS=15V IDS=10A 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) 0 6 4 2 1000 Coss 500 Crss 100 Frequency=1MHz 0 0 5 10 15 20 25 30 0.1 10 30 VDS-Drain-to-Source Voltage (V) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 1 4 www.anpec.com.tw APM3023N Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power TO-252 / TO-220 3000 2500 10 TJ=-55°C TJ=125°C 1 Power (W) ISD-Source Current (A) 100 0.0 0.2 0.4 0.6 1500 1000 500 TJ=25°C 0.1 2000 0.8 1.0 1.2 0 -5 10 1.4 VSD-Source to Drain Voltage -4 10 -3 10 -2 10 -1 10 0 10 1 10 Time (sec) Single Pulse Power SOT-223 3000 Power (W) 2500 2000 1500 1000 500 0 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 Time (sec) Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 5 www.anpec.com.tw APM3023N Typical Characteristics (Cont.) Normalized Thermal Transient Impedence, Junction to Ambient TO-252 / TO-220 Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 -5 10 -4 -3 10 -2 10 -1 10 0 10 1 10 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedence, Junction to Ambient SOT-223 Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=42°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 6 www.anpec.com.tw APM3023N Package Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 0. 0 20 7 www.anpec.com.tw APM3023N Package Information SOT-223( Reference JEDEC Registration SOT-223) D A B1 a c H E L K e A1 e1 b B Dim A A1 B B1 c D E e e1 H L K α β Millimeters Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30 Inches Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 Min. 0.06 Max. 0.07 0.02 0.11 0.01 0.25 0.13 0.03 0.12 0.01 0.26 0.15 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0° Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 0.09 BSC 0.18 BSC 7.30 1.10 2.00 10° 0.26 0.04 0.06 0° 13° 0.29 0.04 0.08 10° 13° 8 www.anpec.com.tw APM3023N TO-220 ( Reference JEDEC Registration TO-220) D R Q b E e b1 e1 L1 L H1 A c F Millimeters Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 J1 Inches Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 9 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100 Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 www.anpec.com.tw APM3023N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 10 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM3023N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application TO-252 A B C 330 ±3 100 ± 2 13 ± 0. 5 F D D1 J T1 T2 16.4 + 0.3 2 ± 0.5 -0.2 2.5± 0.5 Po P1 Ao W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 Bo Ko t 7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 Application SOT-223 A B J T1 T2 W P E 62±1.5 C 12.75± 0.15 330±1 2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t 5.5 ± 0.05 1.5+ 0.1 Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1 11 2.1± 0.1 0.3±0.05 www.anpec.com.tw APM3023N Cover Tape Dimensions Application TO- 252 SOT- 223 Carrier Width 16 12 Cover Tape Width 13.3 9.3 Devices Per Reel 2500 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 12 www.anpec.com.tw