APM4461 P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-7A, RDS(ON) = 25mΩ(typ.) @ VGS = -10V S 1 8 D S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 4 5 D RDS(ON) = 35mΩ(typ.) @ VGS = -4.5V RDS(ON) = 55mΩ(typ.) @ VGS = -2.5V • • • SOP-8 Package SO − 8 S S S Applications • Power Management in Notebook Computer, G Portable Equipment and Battery Powered Systems D D D D P-Channel MOSFET Ordering and Marking Information APM 4461 Package Code K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TR : Tape & R eel H a n d lin g C o d e Tem p. Range Package Code AP M 4461 K : AP M 4461 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous -7 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw APM4461 Absolute Maximum Ratings (Cont.) Symbol Parameter IDM Maximum Drain Current – Pulsed PD Maximum Power Dissipation TJ Thermal Resistance – Junction to Ambient Test Condition Drain-Source Breakdown Voltage VGS=0V , IDS=-250A Zero Gate Voltage Drain Current Gate Threshold Voltage IGSS Gate Leakage Current Drain-Source On-state a Resistance a SD V Diode Forward Voltage W 150 ºC -55 to 150 ºC 50 ºC/W (TA = 25°C unless otherwise noted) Parameter IDSS VGS(th) A 1.0 R θJA Static BVDSS -25 TA=100 ºC Storage Temperature Range Symbol Unit 2.5 Maximum Junction Temperature Electrical Characteristics Rating TA=25 ºC TSTG RDS(ON) (TA = 25°C unless otherwise noted) APM4461 Min. Typ. -20 -1 -0.6 -1.5 µA V ±100 nA VGS=-10V , IDS=-7A 25 35 VGS=-4.5V , IDS=-4A 35 50 VGS=-2.5V , IDS=-2A 55 65 ISD=-2A, VGS=0V Unit V VDS=-24V , VGS=0V VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V Max. -0.7 -1.3 m[ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time VDS=-10V , VGS=-4.5V, IDS=-2A 17.8 21 nC 4 5.2 Tr Turn-on Rise Time VDD=-10V , IDS=-2A , td(OFF) Turn-off Delay Time VGEN=-4.5 V , RG=0.2Ω 10 15 15 20 32 26 15 25 Tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 1240 Coss Output Capacitance VDS=-15V 340 Crss Reverse Transfer Capacitance Frequency=1.0MHz 216 ns pF Notes a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 2 www.anpec.com.tw APM4461 Typical Characteristics Output Characteristics Transfer Characteristics 25 25 -VGS=3,4,5,6,7,8,9,10V 20 -ID-Drain Current (A) -ID-Drain Current (A) 20 TJ=25°C 15 15 10 10 -V GS=2V 5 TJ=125°C 5 TJ=-55°C 0 0 1 2 3 4 0 0.0 5 -VDS-Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 On-Resistance vs. Drain Current 1.75 0.06 -IDS=250µA 1.50 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) 1.0 -VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.5 -25 0 25 50 75 0.04 -VGS=4.5V 0.03 -V GS=10V 0.02 0.01 0.00 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 0.05 0 5 10 15 20 25 -IDS-Drain Current (A) 3 www.anpec.com.tw APM4461 Typical Characteristics (Cont.) On-Resistaence vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 1.8 0.30 -VGS=10V -IDS=7A RDS(ON)-On Resistance (Ω) (Normalized) RDS (ON)-On-Resistance (Ω) -IDS=7A 0.25 0.20 0.15 0.10 0.05 0.00 1 2 3 4 5 6 7 8 9 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 -VGSj-Gate-to-Source Voltage (V) 0 25 50 75 100 125 150 Tj-Junction Temperature (°C) Capacitance Characteristics Gate Charge 1800 10 -VDS=10V -IDS=2A Frequency=1MHz 1600 8 1400 C-Capacitance (pF) -VGS-Gate-to-Source Voltage (V) -25 6 4 2 Ciss 1200 1000 800 600 Coss 400 Crss 200 0 0 5 10 15 20 25 30 0 35 QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 0 5 10 15 20 -VDS-Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM4461 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 25 60 10 Power (W) -IS-Source Current (A) 50 1 TJ=150°C TJ=25°C 40 30 20 0.1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 1 -VSD-Source to Drain Voltage 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 5 www.anpec.com.tw APM4461 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4461 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4461 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 8 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4461 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 9 www.anpec.com.tw