APM4925 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-6.1A, RDS(ON) = 24mΩ(typ.) @ VGS = -10V S1 1 8 D1 Super High Density Cell Design G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 RDS(ON) = 30mΩ(typ.) @ VGS = -4.5V • • • SO − 8 Applications • S2 S1 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G2 G1 D1 Ordering and Marking Information APM 4925 Tem p. Range P ackage Code A P M 4925 XXXXX P-Channel MOSFET X X X X X - Date Code Absolute Maximum Ratings Symbol D2 P ackage Code K : S O -8 O peration Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Handling Code A P M 4925 D2 D1 (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID * Maximum Drain Current – Continuous IDM Maximum Drain Current – Pulsed TA = 25°C -6.1 -40 Unit V A *Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 1 www.anpec.com.tw APM4925 Absolute Maximum Ratings Symbol PD (TA = 25°C unless otherwise noted) Parameter Maximum Power Dissipation TJ Rating Unit TA = 25°C 2.5 W TA = 100°C 1 Maximum Junction Temperature 150 TSTG Storage Temperature Range RθJA Thermal Resistance - Junction to Ambient Electrical Characteristics Symbol IDSS V GS(th) IGSS R DS(ON) b VSD b Dynamic Qg Test Condition Drain-Source Breakdown Voltage V GS=0V, I D = -250µA Zero Gate Voltage Drain Current V DS= -24V, V GS=0V Gate Threshold Voltage V DS=V GS, ID = -250µA Gate Leakage Current V GS= ±25V , V DS=0V Drain-Source On-state Resistance Diode Forward Voltage 50 °C/W (TA=25°C unless otherwise noted) Parameter Static BV DSS °C -55 to 150 APM4925 Min. Typ a. Max. -30 -1 V -1.5 -1 µA -2 V ±100 nA V GS= -10V, ID= -6.1A 24 27 V GS= -4.5V, I D= -5.1A 30 35 -0.7 -1.3 48 58 ISD= -1.7A, V GS=0V Unit mΩ V a Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time C iss Input Capacitance C oss Output Capacitance C rss Reverse Capacitance V DS= -15V, V GS= -10V, ID= -4.6A V DD= -25V, R L =12.5Ω, ID= -2A , V GEN = -10V, R G=6Ω, V GS=0V, V DS= -25V Frequency = 1.0MHZ 10 nC 9 17 33 18 35 70 128 30 56 ns 3200 560 pF 250 Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 2 www.anpec.com.tw APM4925 Typical Characteristics Output Characteristics Transfer Characteristics 50 50 -ID-Drain Current (A) -ID-Drain Current (A) -VGS=4,5,6,7,8,9,10V 40 30 20 -V GS=3V 10 0 40 30 TJ=125°C 20 TJ=25°C TJ=-55°C 10 0 2 4 6 8 0 10 0 1 2 3 4 5 -VGS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.06 1.35 RDS(on)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalzed) -IDS=250µA 1.20 1.05 0.90 0.75 0.60 -50 -25 0 25 50 75 -VGS=4.5V 0.04 0.03 -VGS=10V 0.02 0.01 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 0.05 0 5 10 15 20 25 30 -ID - Drain Current (A) 3 www.anpec.com.tw APM4925 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.050 1.8 -VGS=10V -ID=6.1A 0.045 RDS(on)-On-Resistance (Ω) (Normalized) RDS(on)-On-Resistance (Ω) -ID=6.1A 0.040 0.035 0.030 0.025 0.020 0.015 0.010 2 3 4 5 6 7 8 9 1.6 1.4 1.2 1.0 0.8 0.6 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 50 75 100 125 150 TJ - Junction Temperature (°C) Capacitance Gate Charge 4500 10 Frequency=1MHz -VDS=15V -ID=4.6A 3600 8 Capacitance (pF) -VGS-Gate-Source Voltage (V) 25 6 4 Ciss 2700 1800 900 2 Coss Crss 0 0 0 10 20 30 40 50 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 0 6 12 18 24 30 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM4925 Typical Characteristics Single Pulse Power 30 100 10 80 TJ=150°C Power (W) -IS-Source Current (Α) Source-Drain Diode Forward Voltage TJ=25°C 1 60 40 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 -VSD-Source-to-Drain Voltage (V ) 1 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM Z thJA 4.Surface Mounted D= 0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 5 www.anpec.com.tw APM4925 Package Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4925 Physical Specifications Terminal Material Lead Solderability Packaging Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. 2500 devices per reel for SOP-8 Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature Convection or IR/ Convection VPR 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 10 °C /second max. 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. 215~ 219°C or 235 +5/-0°C 10 °C /second max. 60 seconds Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4925 R e lia b ilit y te s t p r o g r a m Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 °C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 ° C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 ° C -6 5 °C ~ 1 5 0 °C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 F D D1 Po P1 Ao Bo 11.5 ± 0.1 1.5 +0.1 1.5+ 0.25 4.0 ± 0.1 2.0 ± 0.1 8.2 ± 0.1 13± 0.1 Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 8 2.1± 0.1 0.3±0.013 Ko t 2.5± 0.1 0.35±0.013 www.anpec.com.tw APM4925 Cover Tape Dimensions Carrier Width 12 Cover Tape Width 9.3 (mm) Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.4 - Dec., 2002 9 www.anpec.com.tw