APM2030N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 2 3 G D S Reliable and Rugged TO-252 Package Applications • 1 Top View of TO-252 Power Management in Computer, Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM2030N Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 °C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM2030N U : APM2030N XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 Unit V ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 1 www.anpec.com.tw APM2030N Absolute Maximum Ratings (Cont.) Symbol * D (TA = 25°C unless otherwise noted) Parameter Rating I Maximum Drain Current – Continuous 20 IDM Maximum Drain Current – Pulsed 40 PD Maximum Power Dissipation TJ Maximum Junction Temperature TA=25°C 50 TA=100°C 10 TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Unit A W 150 °C -55 to 150 °C 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2030N Min. Typ. Max. Unit Static BV DSS Drain-Source Breakdown Voltage V GS =0V , IDS=250µA IDSS Zero Gate Voltage Drain Current V DS =18V , V GS =0V V GS(th) IGSS Gate Threshold Voltage Gate Leakage Current R DS(ON) a V SD a Drain-Source On-state V DS =V GS , IDS=250µA V GS =±10V , V DS =0V V GS =4.5V , IDS =6A Resistance V GS =2.5V , IDS =2A Diode Forward Voltage ISD =4A , V GS=0V 20 V 0.5 1 µA 1.5 V nA ±100 35 40 38 50 0.6 1.3 mΩ V b Dynamic Qg Total Gate Charge V DS =10V , IDS = 5A 9 3.6 Q gs Gate-Source Charge Q gd td(ON) Gate-Drain Charge Turn-on Delay Time Tr Turn-on Rise Time V DD =10V , IDS =1A , 15 td(OFF) Tf Turn-off Delay Time Turn-off Fall Time V GEN =4.5V , R G =0.2Ω 45 C iss Input Capacitance V GS =0V 25 520 C oss Output Capacitance C rss Notes a b V GS =4.5V , 18 nC 1 17 V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz 110 ns pF 70 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 2 www.anpec.com.tw APM2030N Typical Characteristics Output Characteristics Transfer Characteristics 20 20 18 ID-Drain Current (A) ID-Drain Current (A) VGS=2.5,3,4,5,6,7,8,9,10V 15 2V 10 5 16 14 12 10 TJ=125°C 8 6 TJ=-55°C TJ=25°C 4 1.5V 2 0 0 1 2 3 4 0 0.0 5 VDS - Drain-to-Source Voltage (V) 0.5 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.0500 IDS=250uA 0.0475 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) 1.0 1.25 1.00 0.75 0.50 0.25 0.0450 0.0425 VGS=2.5V 0.0400 0.0375 VGS=4.5V 0.0350 0.0325 0.0300 0.0275 0.00 -50 -25 0 25 50 75 0.0250 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 0 1 2 3 4 5 6 7 8 9 10 ID - Drain Current (A) 3 www.anpec.com.tw APM2030N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 2.00 0.125 ID=6A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.100 0.075 0.050 0.025 VGS=4.5V 1.75 ID=6A 1.50 1.25 1.00 0.75 0.50 0.25 0.000 1 2 3 4 5 6 7 8 9 0.00 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 50 100 125 150 Capacitance 10 750 Frequency=1MHz V DS =10V ID=5A 625 Capacitance (pF) 8 6 4 Ciss 500 375 250 Coss 2 0 75 TJ - Junction Temperature (°C) Gate Charge VGS-Gate-Source Voltage (V) 25 125 0 2 4 6 8 0 10 12 14 16 18 20 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 Crss 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2030N Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 250 20 200 Power (W) IS-Source Current (A) 10 1 TJ=25°C TJ=150°C 150 100 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1E-3 1.6 0.01 0.1 VSD -Source-to-Drain Voltage (V) 1 10 100 1000 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 0.1 D=0.02 D=0.01 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 0.01 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 5 www.anpec.com.tw APM2030N Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 0. 0 20 6 www.anpec.com.tw APM2030N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2030N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 1.5± 0.25 4.0 ± 0.1 8 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 Bo Ko t 2.5± 0.1 0.3±0.05 6.8 ± 0.1 10.4± 0.1 www.anpec.com.tw APM2030N Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 9 www.anpec.com.tw