APM4953 Dual P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -30V/-4.9A, RDS(ON) = 53mΩ(typ.) @ VGS = -10V 5 RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V & , % , Super High Density Cell Design / Reliable and Rugged 5 ! $ , SO-8 Package / " # , SO − 8 Applications • 5 5 Power Management in Notebook Computer, / / Portable Equipment and Battery Powered Systems , Ordering and Marking Information APM 4953 Tem p. R ange P ackage C ode A P M 4953 XXXXX P-Channel MOSFET X X X X X - D a te C o d e Absolute Maximum Ratings Symbol , P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e A P M 4953 K : , , (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Maximum Drain Current Continuous IDM Maximum Drain Current Pulsed TA = 25°C -4.9 -30 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM4953 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Rating Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) TA = 25°C 2.5 TA = 100°C 1.0 Maximum Junction Temperature TSTG * Electrical Characteristics Parameter °C -55 to 150 Thermal Resistance - Junction to Ambient Symbol W 150 Storage Temperature Range RθJA Unit 50 °C/W (TA=25°C unless otherwise noted) Test Condition Min. APM4953 = Typ . Max. Unit Static BV DSS IDSS VGS(th) IGSS R DS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage VDS=VGS , IDS=-250µA VDS=-24V , VGS=0V -1 -1.5 -1 µA -2 V ±100 nA Gate Leakage Current VGS=±25V , VDS=0V VGS=-10V , IDS=-4.9A > 53 60 VGS=-4.5V , IDS=-3.6A 80 95 ISD=-1.7A , VGS=0V -0.7 -1.3 29 Diode Forward Voltage Dynamic V -30 Drain-Source On-state Resistance V SD VGS=0V , IDS=-250µA > = Qg Total Gate Charge VDS=-15V , IGS=-10V 22.3 lD=-4.6A 4.65 Q gs Gate-Source Charge Q gd Gate-Drain Charge 2 td(ON) Tr Turn-on Delay Time Turn-on Rise Time 10 18 15 20 td(OFF) Turn-off Delay Time 22 38 15 1260 25 Tf Turn-off Fall Time C iss Input Capacitance C oss Output Capacitance C rss Notes a b VDD=-15V , ID=-2A , VGEN=-10V , R G=6Ω R L=7.5Ω VGS=0V VDS=-25V Reverse Transfer Capacitance Frequency=1.0MHz 340 mΩ V nC ns pF 220 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2 www.anpec.com.tw APM4953 Typical Characteristics Output Characteristics -V/5= 5,6,7,8,9,10V 20 25 -ID-Drain Current (A) 25 -V/5=4V 15 10 -V/5=3V 5 0 30 1 2 3 4 5 6 7 15 TJ=125°C TJ=-55°C 10 TJ=25°C 5 -V/5=2V 0 20 0 8 0 1 Threshold Voltage vs. Junction Temperature RDS(on)-On-Resistance (Ω) 1.00 -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250µA 0.50 0.25 -25 0 25 50 75 5 0.12 0.10 V/5=-4.5V 0.08 V/5=-10V 0.06 0.04 0.02 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 4 0.14 1.25 0.00 -50 3 On-Resistance vs. Drain Current 0.75 2 -VGS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) 1.50 30 -ID-Drain Current (A) Transfer Characteristics 0 3 6 9 12 15 -ID - Drain Current (A) 3 www.anpec.com.tw APM4953 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage -I,= 4.9A 0.225 -VGS=10V -ID=4.9A 1.75 0.200 1.50 0.175 1.25 0.125 1.00 0.150 0.75 0.100 0.50 0.075 0.050 0.025 2.00 RDS(on)-On-Resistance (Ω) (Normalized) 0.250 RDS(on)-On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.25 1 2 3 4 5 6 7 8 9 0.00 -50 10 -25 0 6 4 2 2000 1600 Ciss Capacitance (pF) -VGS-Gate-Source Voltage (V) Frequency=1MHz 2400 8 1200 800 Coss 400 5 100 125 150 2800 -VD=10V -ID=4.9A 0 75 Capacitance Gate Charge 0 50 (°C) TJ - Junction Temperature -VGS - Gate-to-Source Voltage (V) 10 25 10 15 20 0 25 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 Crss 0 5 10 15 20 25 30 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM4953 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 30 50 TJ=25°C 30 TJ=150°C 1 Power (W) 40 -IS-Source Current (Α) 10 20 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.01 0.1 1 10 100 Time (sec) -VSD-Source-to-Drain Voltage (V ) Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 Normalized Effective Transient Thermal Impedance 2 D= 0.05 D= 0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A=P DMZ thJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw APM4953 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1. 27BSC 0. 50BSC 8° 8° 6 www.anpec.com.tw APM4953 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4953 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2.0 ± 0.1 6.4 ± 0.1 8 5.2± 0. 1 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4953 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw