APM3020P P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-11A, RDS(ON) = 17mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -5V • • • Super High Density Cell Design Reliable and Rugged TO-252 Package G D S Applications Top View of TO-252 • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Ordering and Marking Information APM 3020P P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e T e m p. R a ng e P a c ka g e C o d e APM 3020P U : APM 3020P XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous -40 IDM Maximum Drain Current – Pulsed -70 PD Maximum Power Dissipation TA=25 ºC 50 TA=100 ºC 20 Unit V A W ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 1 www.anpec.com.tw APM3020P Absolute Maximum Ratings Symbol TJ (TA = 25°C unless otherwise noted) Parameter Rating Unit 150 ºC -55 to 150 ºC 2.5 ºC/W Maximum Junction Temperature TSTG Storage Temperature Range RθJC Thermal Resistance – Junction to Case Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Static BVDSS Test Condition Drain-Source Breakdown Voltage VGS=0V , IDS=-250A IDSS VGS(th) Zero Gate Voltage Drain Current Gate Threshold Voltage IGSS RDS(ON)a VSDa APM3020P Min. Typ. Max. -30 Unit V VDS=-24V , VGS=0V -1 -3 µA V ±100 nA Gate Leakage Current VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V Drain-Source On-state VGS=-10V , IDS=-11A 17 20 Resistance VGS=-5V , IDS=-7A 24 30 Diode Forward Voltage ISD=-11A, VGS=0V -1 -1.3 -1.3 mΩ V b Dynamic Qg Total Gate Charge VDS=-15V , VGS=-4.5V, 23 30 Qgs Gate-Source Charge IDS=-4.6A 10 Qgd Gate-Drain Charge 9 td(ON) Turn-on Delay Time 30 Tr Turn-on Rise Time VDD=-15V , IDS=-6A , 16 22 30 td(OFF) Turn-off Delay Time 75 120 31 80 VGEN=-10 V , RG=1Ω RL=2.5Ω Tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 3720 Coss Output Capacitance VDS=-25V 580 Crss Reverse Transfer Capacitance Frequency=1.0MHz 245 nC ns pF Notes a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 2 www.anpec.com.tw APM3020P Typical Characteristics Transfer Characteristics Output Characteristics 50 50 VGS=4,5,6,7,8,9,10V 40 -IDS-Drain Current (A) -IDS-Drain Current (A) 40 30 30 20 10 0 20 V GS=3V 2 4 6 8 0 10 0 1 -VDS-Drain-to-Source Voltage (V) RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) 1.00 0.75 0.50 0.25 0 25 50 75 5 0.030 -VGS=5V 0.025 -VGS=10V 0.020 0.015 0.010 0.005 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 4 0.035 -IDS=250µA -25 3 On-Resistance vs. Drain Current 1.25 0.00 -50 2 -VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 TJ=-55°C TJ=25°C 10 VGS=2.5V 0 TJ=125°C 0 5 10 15 20 25 30 -IDS-Drain Current (A) 3 www.anpec.com.tw APM3020P Typical Characteristics Cont. On-Resistaence vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0.030 -IDS=7A RDS(ON)-On-Resistance (Ω) (Normalized) RDS (ON)-On-Resistance (Ω) 0.15 0.12 0.09 0.06 0.03 0.00 0 2 4 6 8 0.025 0.020 0.015 0.010 0.005 0.000 -50 10 -VGS - Gate-to-Source Voltage (V) 0 25 50 75 100 125 150 Capacitance Characteristics 3000 10 -VDS =15V -IDS=4.6A 2500 8 C-Capacitance (pF) -VGS-Gate-to-Source Voltage (V) -25 Tj-Junction Temperature (°C) Gate Charge 6 4 2 0 0 -V GS=10V -IDS=11A Ciss 2000 1500 1000 Coss 500 10 20 30 0 40 0 5 10 15 20 25 30 -VDS-Drain-to-Source Voltage (V) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 Crss 4 www.anpec.com.tw APM3020P Typical Characteristics Cont. Source-Drain Diode Forward Voltage Single Pulse Power 3000 50 2500 2000 Power (W) -ISD-Source Current (A) 10 1 TJ=25°C TJ=150°C 1500 1000 500 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 -5 10 -4 -3 10 10 -VSD-Source-to-Drain Voltage (V ) -2 -1 10 10 0 10 1 10 Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA D=0.02 D=0.01 SINGLE PULSE 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 5 www.anpec.com.tw APM3020P Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 0. 0 20 6 www.anpec.com.tw APM3020P Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM3020P Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao D1 T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 F D 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 2 ± 0.5 T1 16.4 + 0.3 -0.2 D1 Po 1.5± 0.25 4.0 ± 0.1 8 T2 P E 2.5± 0.5 W 16+ 0.3 - 0.1 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 www.anpec.com.tw APM3020P Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2002 9 www.anpec.com.tw